The magnetic domain structure of the multiferroic Bi1-xDyxFeO3 (BDFO) deposited on ZnO at the macroscopic level has been demonstrated in this paper. Magnetic properties are observed by saturated magnetic and ferroelectric hysteresis loops at room temperature. The coupling behaviour and magnetic transition are verified using Multimode Atomic Force Microscope by applying bias between sample and MFM tip. ZnO thin film of 300 nm was deposited by dielectric sputtering using a ZnO target on Si p-type conducting (.0001-0005 Ω cm) substrate. BDFO thin films of 300 nm were deposited on Si/ZnO using PLD (Pulsed laser deposition) technique. It is observed that BDFO thin films integrated with ZnO film shows the coexistence of ferromagnetic and ferroelectric ordering with significant coupling at room temperature. Integration of BDFO films with ZnO piezoelectric thin film shows the potential in MEMS applications as well as in Memory devices and strong history dependent systems.
In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol-gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 °C for 1 h in air. X-ray diffraction (XRD) showed wurtzite crystalline structure for the films annealed above 400 °C. The films were subsequently irradiated by beams of excimer (KrF, λ=248 nm) laser. The evolution of crystal structure, surface morphology and optical properties were studied using XRD, filed emission scanning electron microscope (FE-SEM) and UV-Vis spec…
Biomimetic fabrication and tunable wetting properties of three-dimensional hierarchical ZnO structures by combining soft lithography templated with lotus leaf and hydrothermal treatments
In this study, direct-current reactive sputtered ZnO and ZnO1-x based thin film (30 nm and 300 nm in thickness) memristor devices were produced and the effects of oxygen vacancies and thickness on the memristive characteristics were investigated. The oxygen deficiency of the ZnO1-x structure was confirmed by SIMS analyses. The memristive characteristics of both the ZnO and ZnO1-x devices were determined by time dependent current-voltage (I-V-t) measurements. The distinctive pinched hysteresis I-V loops of memristors were observed in all the fabricated devices. The typical homogeneous interface…
We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation. Microstructured p-type silicon was obtained by ns-laser irradiation in SF6 gas, which results in the formation of quasi-ordered and uniform microspikes on the silicon surface. The irradiated silicon contains sulfur impurities, which extend its absorbance to the near infrared. A thin film of ZnO was conformally deposited on the microstructured silicon substrates by …
Semiconductive ZnO has shown to be a fascinating element for application in high-performance sensors. ZnO with various thicknesses (87-500 nm) was deposited on the surface of Co-based amorphous micro-wire (Co68.15Fe4.35Si12.5B15) using magnetron sputtering technique and the magnetoimpedance (MI) response was evaluated. The MI% increases monotonously up to the 240 nm thickness of the ZnO layer. By further increase in the ZnO layer thickness the MI% decreases. MI response and field sensitivity increased from 227% and 1.7 %/Oe for bare micro-wire up to 406% and 4.99 %/Oe for ZnO deposited micro-w…
This novel piezoelectric zinc oxide (ZnO) thin film microcantilever was fabricated by micromachining technique. To release the cantilever, wet anisotropic etching of Silicon (Si) was performed by tetramethyl ammonium hydroxide (TMAH). The transverse piezoelectric coefficient d31 of the ZnO film, obtained from the deflection of the cantilever with influence of applied voltage, was calculated as 3.32 pC/N. The observed dynamic characterization of the novel piezoelectric microcantilever had linear response with the applied driving voltage. The obtained values of Young Modulus and Hardness were 20…
Flexible and transparent electronics presents a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc.Zinc oxide (ZnO) and related materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performance, together with low processing temperature and good optical transparency.In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and related material…
The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron sputtering, with a thickness of approximately 200 nm. ZnO was alloyed with Co to a concentration $x$ of 0.1 and co-doped with a 5.5% wt concentration of Al. The electrical resistivity was measured along the sample surface by the four-point probe method with a magnetic field of up to 4 T applied perpendicular to the surface of the film. The experimental results of t…
New insights into controlling nanowire merging phenomena are demonstrated in growth of thin ZnO nanowires using monodispersed Au colloidal nanoparticles as catalyst. Both nanowire diameter and density were found to be strongly dependent on the density of Au nanoparticles. Structural analysis and spectral cathodoluminescence imaging of the c-plane nanowire cross-sections reveal that thin isolated nanowires growing from the Au nanoparticles begin to merge and coalesce with neighbouring nanowires to form larger nanowires when their separation reaches a threshold distance. Green luminescence, whic…
Radiation-induced coupling between A and B excitons in ZnO is theoretically studied. Considering the center-of-mass motion of excitons in bulk and thin film structures, we reveal the eigenmodes of an exciton--radiation coupled system and the ratio of each excitonic component, which is determined from diagonalization of the self-consistent equation between the polarization and the Maxwell electric field. In particular, in a nano-to-bulk crossover size regime, the large interaction volume between multipole-type excitonic waves and radiation waves causes radiative coupling between excitons from d…
