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arXiv 0904.2263cond-mat.mtrl-scicond-mat.mes-hall
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SrRuO3薄膜表面的扫描隧道显微镜纳米光刻

Scanning Tunneling Microscope Nanolithography on SrRuO3 Thin Film Surfaces

Yun Liu, Jia Zhang

摘要:

利用扫描隧道显微镜在室温下对SrRuO 3(SRO)薄膜表面进行了纳米级光刻。刻蚀线的深度随着偏置电压的增加而增加,但增加隧穿电流不会显著改变刻蚀线的深度。由实验数据得到的线宽随偏压的变化关系与基于场致蒸发的理论计算相一致。此外,成功地创建了三个正方形的纳米结构,显示了在SRO薄膜中制造纳米器件的能力。

英文摘要:

Nanoscale lithography on SrRuO3 (SRO) thin film surfaces has been performed by scanning tunneling microscopy under ambient conditions. The depth of etched lines increases with increasing bias voltage but it does not change significantly by increasing the tunneling current. The dependence of line width on bias voltage from experimental data is in agreement with theoretical calculation based on field-induced evaporation. Moreover, a three-square nanostructure was successfully created, showing the capability of fabricating nanodevices in SRO thin films.

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