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arXiv 0708.3769cond-mat.mtrl-sci
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扫描隧道显微镜中硅的紫外光发射

Ultraviolet light emission from Si in a scanning tunneling microscope

Patrick Schmidt, Richard Berndt, Mikhail I. Vexler

摘要:

用扫描隧道显微镜与Si(100)和(111)晶片接触,观察到紫外和可见光辐射。这种发光依赖于硅中热电子的存在,这些热电子在n型和p型样品上的正偏压下通过从尖端的注入提供,或者在p型样品上的负偏压下通过齐纳隧道提供。测量的光谱揭示了直接光学跃迁在硅体的贡献。所需的空穴远低于价带边缘从尖端注入或通过俄歇过程产生。

英文摘要:

Ultraviolet and visible radiation is observed from the contacts of a scanning tunneling microscope with Si(100) and (111) wafers. This luminescence relies on the presence of hot electrons in silicon, which are supplied, at positive bias on n- and p-type samples, through the injection from the tip, or, at negative bias on p-samples, by Zener tunneling. Measured spectra reveal a contribution of direct optical transitions in Si bulk. The necessary holes well below the valence band edge are injected from the tip or generated by Auger processes.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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