We investigate the electromechanical response of doubly clamped graphene nanoribbons to a transverse gate voltage. An analytical model is developed to predict the field-induced deformation of graphene nanoribbons as a function of field intensity and graphene geometry. This model is validated thought atomistic simulations using the combination of a constitutive charge-dipole model and a pseudo-chemical many-body potential. As a newly observed effect of electric polarization, this field-induced deflection allows the graphene to oscillate at its natural frequency, which is found to decrease dramatically with increasing graphene size.
Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a layered structure, the intensity of the Raman G- and 2D-mode features of graphene are strongly modulated by optical interference effects and allow an accurate determination of the electrostatically-induced membrane deflection, up to irreversible collapse. The membrane deflection is successfully described by an electromechanical model, which we also use to provide …
We consider graphene sheet suspended above a conducting surface. Treating graphene as an elastic membrane subjected to Casimir force, we study its stability against attachment to the conductor. There exists a critical elevation at the edges below which the central part of suspended graphene nucleates a trunk that becomes attached to the conductor. The dependence of the critical elevation on temperature and dimensions of the graphene sheet is computed.
通过悬浮单层石墨烯，我们在电子密度约为2*10^11 cm^-2时获得了超过200，000 cm ^2/Vs的迁移率。悬浮在Si/SiO_2栅电极上方约150 nm处，并通过电子束光刻和刻蚀的组合实现了与石墨烯的电接触。通过采用电流感应加热原位清洁试样，直接导致电输运的显着改善。伴随着大的迁移率增强，特征狄拉克峰的宽度减少了10倍相比，传统的，非悬浮设备。这一进展应该允许访问石墨烯的固有传输特性。
Wiedemann-Franz Relation and Thermal-transistor Effect in Suspended Graphene
我们提取实验的电子热导率，$K_{e}$，在悬浮的石墨烯，我们掺杂使用背栅电极。我们利用两点直流电子输运在低偏置电压和中间温度（50 - 160 K），电子和晶格温度去耦。热导率与电荷电导率乘以温度成比例，证实了悬浮石墨烯中服从Wiedemann-Franz关系。我们提取Lorenz系数的估计值为1.1至1.7 $\times 10^{-8}$ W $Ω$ K $^{-2}$。$K_e$显示出晶体管效应，并且当电荷载流子密度在$\approx$ 0.5至1.8 $\times 10^{11}$ cm $^{-2}$范围内时，可以用背栅以大于2的因子进行调谐。
The measured frequencies and intensities of different first- and second- order Raman peaks of suspended graphene are used to show that optical phonons and different acoustic phonon polarizations are driven out of local equilibrium inside a sub-micron laser spot. The experimental results are correlated with a first principles-based multiple temperature model to suggest a considerably lower equivalent local temperature of the flexural phonons than those of other phonon polarizations. The finding reveals weak coupling between the flexural modes with hot electrons and optical phonons. Since the ul…
Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
具有高载流子迁移率μ的石墨烯对于石墨烯基电子器件和石墨烯的狄拉克费米子的基本性质的研究都是必需的。人们普遍认为，石墨烯中的迁移率限制因素是驻留在石墨烯上或底层衬底中的带电杂质的库仑散射。这对于SiO2衬底上的传统石墨烯器件和最近报道的高迁移率悬浮和支撑器件都是如此。减少这种散射的有吸引力的方法是将石墨烯放置在具有高静态介电常数κ的环境中，这将有效地屏蔽由于杂质引起的电场。然而，到目前为止，实验仅报告了高κ环境对迁移率的适度影响。在这里，我们通过研究悬浮在液体中的多终端石墨烯器件中的电输运来研究石墨烯的介电环境的影响，其中κ范围从1.9到33。对于非极性液体（κ<5），我们观察到μ随着κ快速增加，并报告了石墨烯器件在苯甲醚（κ=4.3）中的室温迁移率高达约60，000 cm 2/Vs，而在极性液体（κ>18）中，我们观察到迁移率急剧下降。我们证明，非极性液体通过筛选吸附在石墨烯上的带电杂质来增强流动性，而极性液体中的带电离子引起所观察到的流动性抑制。此外，使用分子动力学模拟，我们建立了平面外弯曲声子的散射，在室温下在真空中悬浮石墨烯中的主要散射机制，被液体的存在抑制。我们希望我们的研究结果可以提供控制和减少未来石墨烯电子器件中载流子散射的途径。
We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. Graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5-micrometer size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0x10^10 cm-2 to 1.8x10^11 cm-2 the thermal conductivity decreases from ~(1.8+/-0.2)x10^3 W/mK to ~…
We demonstrate high-frequency mechanical resonators in ballistic graphene p-n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model. We consistently find that after the last annealing step the mass density compares well with the expected density of pure graphene. In a graphene membrane with high built-in tension, but still of macroscopic size…
We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for technology applications. It encompasses the demands for scalable fabrication as well as for ultra-fast response due to weak coupling to environment. The fabricated devices exhibited initially a weak field-effect response with substantial positive ($p$) doping which transformed into weak negative ($n$) doping upon current annealing at the temperature of 4 Kelvin…
Using molecular dynamics simulations, we probe a suspended graphene layer by a diamond-like-carbon tip at various temperatures. The force acting on the tip in the sliding direction is measured to be negative at liquid-helium temperature. This negative force is found to be associated with a spontaneous lateral oscillation of the suspended graphene in favor of a low interface potential corrugation. Our hypothesis is that, at low temperature, this oscillation induces an important hidden contribution to the friction force in the lateral direction. This functions as a particular energy dissipation …
Using nanoparticles to impart extrinsic rippling in graphene is a relatively new method to induce strain and to tailor the properties of graphene. Here we study the structure and elastic properties of graphene grown by chemical vapour deposition and transferred onto a continuous layer of SiO2 nanoparticles with diameters of around 25 nm, prepared by Langmuir-Blodgett technique on Si substrate. We show that the transferred graphene follows only roughly the morphology induced by nanoparticles. The graphene membrane parts bridging the nanoparticles are suspended and their adhesion to the AFM tip …
Previous statistical studies on the mechanical properties of chemical-vapor-deposited (CVD) suspended graphene membranes have been performed by means of measuring individual devices or with techniques that affect the material. Here, we present a colorimetry technique as a parallel, non-invasive, and affordable way of characterizing suspended graphene devices. We exploit Newton rings interference patterns to study the deformation of a double-layer graphene drum 13.2 micrometer in diameter when a pressure step is applied. By studying the time evolution of the deformation, we find that filling th…
Graphene grown by chemical vapour deposition is transferred on top of flat gold nanoislands and characterized by scanning tunnelling microscopy (STM) and atomic force microscopy (AFM). Graphene bubbles are formed with lateral dimensions determined by the size and shape of nanoislands. These graphene bubbles can be squeezed during STM imaging using bias voltages of less than 250 mV and tunnelling currents of 1 nA. Similarly, the graphene suspended over gold nanovoids is deflected 4 - 5 nm by the STM tip when imaging at low bias voltages (U = 30 mV). Nanoindentation measurements performed by AFM…
The profile of suspended silicon nitride thin films patterned with one-dimensional subwavelength grating structures is investigated using Atomic Force Microscopy. We first show that the results of the profilometry can be used as input to Rigorous Coupled Wave Analysis simulations to predict the transmission spectrum of the gratings under illumination by monochromatic light at normal incidence and compare the results of the simulations with experiments. Secondly, we observe sharp vertical deflections of the films at the boundaries of the patterned area due to local modifications of the tensile …
Suspended graphene membrane presents a particular structure with fundamental interests and applications in nanomechanics, thermal transport and optoelectronics. Till now, the commonly used geometries are still quite simple and limited to the microscale. We propose here to overcome this problem by making nanostructures in suspended epitaxial bilayer graphene on a large scale and with a large variety of geometries. We also demonstrate a new hybrid thin film of SiC-graphene with an impressive robustness. Since the mechanics and thermal dissipation of a suspended graphene membrane are strongly rel…
Graphene membranes act as highly sensitive transducers in nanoelectromechanical devices due to their ultimate thinness. Previously, the piezoresistive effect has been experimentally verified in graphene using uniaxial strain in graphene. Here we report experimental and theoretical data on the uni- and biaxial piezoresistive properties of suspended graphene membranes applied to piezoresistive pressure sensors. A detailed model that utilizes a linearized Boltzman transport equation describes accurately the charge carrier density and mobility in strained graphene, and hence the gauge factor. The …
We report a deterministic 2D material (2DM) transfer method to assemble any-stacking-order heterostructures incorporating suspended ultra-thin 2D materials, such as single-layer graphene (SLG) and bilayer graphene (BLG). The transfer procedure relies on a single-step preparation nitrocellulose micro-stamp, which combines both outstanding adhesion and softness. It permits the dry pick-up of naked 2D crystals (graphene, MoS$_2$, and hBN) directly from a SiO$_2$ substrate, and to precisely transfer them on substrates or trenches. Optical and Raman data show that no significant defect is introduce…
