We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport. Concomitant with large mobility enhancement, the widths of the characteristic Dirac peaks are reduced by a factor of 10 compared to traditional, non-suspended devices. This advance should allow for accessing the intrinsic transport properties of graphene.
We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally derived bandgap is in quantitative agreement with the results of our electronic-structure calculations on chiral GNRs with comparable width taking into account the electron-electron interactions, indicating that the origin of the bandgap in non-armchair GNRs is partially due to the magnetic zigzag edges.
Using the first-principles calculations based on density functional theory, we systematically investigate the strain-engineering (tensile and compressive strain) electronic, mechanical and transport properties of monolayer penta-SiC$_2$. By applying an in-plane tensile or compressive strain, it is easy to modulate the electronic band structure of monolayer penta-SiC$_2$, which subsequently changes the effective mass of carriers. Furthermore, the obtained electronic properties are predicted to change from indirectly semiconducting to metallic. More interestingly, at room temperature, uniaxial s…
Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor in graphene is the Coulomb scattering off of charged impurities that reside either on graphene or in the underlying substrate. This is true both for traditional graphene devices on SiO2 substrates and possibly for the recently reported high-mobility suspended and supported devices. An attractive approach to reduce such scattering is to place graphene in an envir…
We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation …
The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11 cm^-2, the resistivity increases with increasing T and is linear above 50K, suggesting carrier scattering from acoustic phonons. At T=240K the mobility is ~120,000 cm^2/Vs, higher than in any known semiconductor. At the charge neutral point we observe a non-universal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10^8 cm^…
Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and the data are analyzed according to recent theoretical work by e.g., Alekseev, Physical Review Letters 117,166601 (2016). Size-dependent and temperature dependent NMR are found to conform to the theoretical predictions. In particular, transport of 2DEG with relatively weak Coulomb interaction (interparticle interaction parameter r_s<1) manifests a crossover bet…
The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stab…
Quasi-one dimensional electron systems have been created using a suspended helium film on a structured substrate. The electron mobility along the channel is calculated by taking into account the essential scattering processes of electrons by helium atoms in the vapor phase, ripplons, and surface defects of the film substrate. It is shown that the last scattering mechanism may dominate the electron mobility in the low temperature limit changing drastically the temperature dependence of the mobility in comparison with that controlled by the electron-ripplon scattering.
Non-centrosymmetric transition metal monopnictides, including TaAs, TaP, NbAs, and NbP, are emergent topological Weyl semimetals (WSMs) hosting exotic relativistic Weyl fermions. In this letter, we elucidate the physical origin of the unprecedented charge carrier mobility of NbP, which can reach $1\times10^{7}$ cm $^{2}$V$^{-1}$s$^{-1}$ at 1.5 K. Angle- and temperature-dependent quantum oscillations, supported by density function theory calculations, reveal that NbP has the coexistence of p- and n-type WSM pockets in the $k_{z}$=1.16$π$/c plane (W1-WSM) and in the $k_{z}$=0 plane near the high…
The measured frequencies and intensities of different first- and second- order Raman peaks of suspended graphene are used to show that optical phonons and different acoustic phonon polarizations are driven out of local equilibrium inside a sub-micron laser spot. The experimental results are correlated with a first principles-based multiple temperature model to suggest a considerably lower equivalent local temperature of the flexural phonons than those of other phonon polarizations. The finding reveals weak coupling between the flexural modes with hot electrons and optical phonons. Since the ul…
We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO2 substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather decreases, showing a maximum for F=10 kV/cm. Deposition on HfO2 strongly degrades the drift velocity by up to a factor of 10 with respect to suspended GNRs in the low-field regime, whereas at high fields drift velocity approaches the intrinsic value expected in suspended GNRs. Even in the assumption of perfect edges, the obtained mobility is far behind what expect…
Resolving low-energy features in the density of states (DOS) holds the key to understanding wide variety of rich novel phenomena in graphene based 2D heterostructures. Lifshitz transition in bilayer graphene (BLG) arising from trigonal warping has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on the transport properties has been challenging because of its relatively low energy scale ($\sim 1$ meV). In this work, we demonstrate that the thermoelectric power (TEP) can be used as an effective probe to investigate fine changes in the D…
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scattering. At cryogenic tempeature the FET mobility increases up to 45,000 $cm^2/Vs$, which is eight times higher compared with the mobility obtained in earlier reports. The unprecedentedly clean h-BN/BP/h-BN heterostructure exhibits Shubnikov-de Haas oscillations and quantum Hall effect with Landau level (LL) filling factors down to v=2 in conventional…
Topological crystalline insulators (TCIs) possess metallic surface states protected by crystalline symmetry, which are a versatile platform for exploring topological phenomena and potential applications. However, progress in this field has been hindered by the challenge to probe optical and transport properties of the surface states owing to the presence of bulk carriers. Here we report infrared (IR) reflectance measurements of a TCI, (001) oriented $Pb_{1-x}Sn_{x}Se$ in zero and high magnetic fields. We demonstrate that the far-IR conductivity is unexpectedly dominated by the surface states a…
Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers.…
We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/Vs. For bilayer devices, we observe conductance minima at all integer filling factors nu between 0 and -8, as well as a small plateau at ν=1/3. For trilayer devices, we observe features at nu=-1, -2, -3 and -4, and at ν~0.5 that persist to 4.5K at B=8T. All of these features persist for all accessible values of Vg and B, and could suggest the onset of symmetry breaking of the first few Landau (LL) levels and fractional quantum Hall states.
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The minima at $p=3$ disappear below a certain electron density, although the surrounding minima at $p=2$ and $p=4$ survive at significantly lower densities. Furthermore, the onset for the resistance minimum at a filling factor $ν=3/5$ is found to be independent of the tilt angle of the magnetic field. These surprising results indicate the intersection …
While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3, a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such states, nominally undoped single crystals of Bi2Se3 with carrier densities approaching 10^16 cm^-3 and very high mobilities exceeding 2 m^2 V^-1 s^-1 have been studied. A comprehensive analysis of Shubnikov de Haas oscillations, Hall effect, and optical reflectivity indicates that the measured electrical transport can be attributed solely to bulk states, eve…
We report on a theoretical study on the rise of strong peaks at the harmonics of the cyclotron resonance in the irradiated magnetoresistance in ultraclean two-dimensional electron systems. The motivation is the experimental observation of a totally unexpected strong resistance peak showing up at the second harmonic. We extend the radiation-driven electron orbit model (previously developed to study photocurrent oscillations and zero resistance states) to a ultraclean scenario that implies longer scattering time and longer mean free path. Thus, when the mean free path is equivalent, in terms of …
We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for technology applications. It encompasses the demands for scalable fabrication as well as for ultra-fast response due to weak coupling to environment. The fabricated devices exhibited initially a weak field-effect response with substantial positive ($p$) doping which transformed into weak negative ($n$) doping upon current annealing at the temperature of 4 Kelvin…
We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mobility and conductance responses to strain were observed for single layer and bilayer samples. These types of devices can be extended to other 2D membranes such as MoS2, providing transport, optical or other measurements with in situ strain.
We present an interpretation of recent experimental measurements of dmu/dn in suspended bilayer graphene samples. We demonstrate that the data may be quantitatively described by assuming a spatially varying band gap induced by local electric fields. We demonstrate that the gap fluctuations vary amongst different samples and that the gap fluctuations are correlated with the associated charge density fluctuations, indicating that the mechanism causing this effect is likely to be an extrinsic effect. We also provide predictions for the optical conductivity and mobility of suspended bilayer graphe…
We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.
The temperature dependence of microwave-induced resistance oscillations (MIRO), according to the theory, originates from electron-electron scattering. This scattering affects both the quantum lifetime, or the density of states, and the inelastic lifetime, which governs the relaxation of the nonequilibrium distribution function. Here, we report on MIRO in an ultrahigh mobility ($μ> 3 \times 10^7$ cm$^2$/Vs) 2D electron gas at $T$ between $0.3$ K and $1.8$ K. In contrast to theoretical predictions, the quantum lifetime is found to be $T$-independent in the whole temperature range studied. At the…
We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electric transport on a scale larger than 200nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an average electric displacement of -0.08 V/nm, compatible with an electric field induced energy gap. The high quality of these devices is also demonstrated by the appearance of quantum Hall plateaus at magnet…
Coupling high quality, suspended atomic membranes to specialized electrodes enables investigation of many novel phenomena, such as spin or Cooper pair transport in these two dimensional systems. However, many electrode materials are not stable in acids that are used to dissolve underlying substrates. Here we present a versatile and powerful multi-level lithographical technique to suspend atomic membranes, which can be applied to the vast majority of substrate, membrane and electrode materials. Using this technique, we fabricated suspended graphene devices with Al electrodes and mobility of 550…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental verification and/or discovery of many new quantum mechanical effects in this field. Examples are effects due to specific graphene edges, such as spin polarization at zigzag edges of a graphene nanoribbon and the use of the valley degree of freedom in the field of graphene valleytronics8. As a first step in this direction we present the observation of quantized conducta…
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temperature and electric field dependent behavior on the conductance of the graphene device. The conductance around the neutrality point is observed to be reduced from around $e^2/h$ at 30 K to $\sim0.01~…
The interplay of graphene and superconductivity has attracted great interest for understanding the two-dimensional Dirac Fermion physics and for superconducting device applications. In previous work, graphene-superconductor junctions fabricated on standard SiO2 substrates were highly disordered. Due to charge carrier scattering and potential fluctuations, the expected intrinsic properties of graphene combined with superconductors remained elusive to experimental observations. We propose suspended graphene-superconductor junctions as an effective solution to the problem. Here, we show the fabri…
Graphene membranes act as highly sensitive transducers in nanoelectromechanical devices due to their ultimate thinness. Previously, the piezoresistive effect has been experimentally verified in graphene using uniaxial strain in graphene. Here we report experimental and theoretical data on the uni- and biaxial piezoresistive properties of suspended graphene membranes applied to piezoresistive pressure sensors. A detailed model that utilizes a linearized Boltzman transport equation describes accurately the charge carrier density and mobility in strained graphene, and hence the gauge factor. The …
We present thermopower measurements on a high electron mobility two-dimensional electron gas (2DEG) in a thin suspended membrane.We show that the small dimension of the membrane substantially reduces the thermal conductivity compared to bulk material so that it is possible to establish a strong thermal gradient along the 2DEG even at a distance of few micrometers. We find that the zero-field thermopower is significantly affected by the micro patterning. In contrast to 2DEGs incorporated in a bulk material, the diffusion contribution to the thermopower stays dominant up to a temperature of 7 K …
Using ultrahigh magnetic fields up to 170 T and polarized midinfrared radiation with tunable wavelengths from 9.22 to 10.67 um, we studied cyclotron resonance in large-area graphene grown by chemical vapor deposition. Circular-polarization dependent studies reveal strong p-type doping for as-grown graphene, and the dependence of the cyclotron resonance on radiation wavelength allows for a determination of the Fermi energy. Thermal annealing shifts the Fermi energy to near the Dirac point, resulting in the simultaneous appearance of hole and electron cyclotron resonance in the magnetic quantum …
We investigate the low-field phonon-limited mobility in armchair graphene nanoribbons (GNRs) using full-band electron and phonon dispersion relations. We show that lateral confinement suppresses the intrinsic mobility of GNRs to values typical of common bulk semiconductors, and very far from the impressive experiments on 2D graphene. Suspended GNRs with a width of 1 nm exhibit a mobility close to 500 cm^2/Vs at room temperature, whereas if the same GNRs are deposited on HfO2 mobility is further reduced to about 60 cm^2/Vs due to surface phonons. We also show the occurrence of polaron formation…
Recent experiments on suspended graphene layers have indicated the crucial role of carrier mobility in the competition between Laughlin collective state and insulating state, probably of Wigner-crystal-type. Moreover, the fractional quantum Hall effect (FQHE) in graphene has been observed at a low carrier density where the interaction is reduced as a result of particles dilution. This suggests that the interaction may not be as important in the triggering of FQHE as expected based on the standard formulation of the composite fermions model. Here, the topological arguments are presented to expl…
The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical properties of this material. However, the experimental realization of devices displaying these properties was, until now, hampered by the influence of the ambient environment, primarily the substrate. Here we report on the fabrication of Suspended Graphene devices and on studies of their electrical transport properties. In these devices, environmental disturba…
Tetrahex-carbon is a recently predicted two dimensional (2D) carbon allotrope which is composed of tetragonal and hexagonal rings. Unlike flat graphene, this new 2D carbon structure is buckled, possesses a direct band gap ~ 2.6 eV and high carrier mobility with anisotropic feature. In this work, we employ first-principles density-functional theory calculations to explore mechanical properties of tetrahex-C under uniaxial tensile strain. We find that tetrahex-C demonstrates ultrahigh ideal strength, outperforming both graphene and penta-graphene. It shows superior ductility and sustains uniaxia…
We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected directly to the part of graphene probed by transport measurements, but only through etched constriction, which prevents the contacts from acting invasively. The device high quality and uniformity is demonstrated by a reproducibly narrow (delta_n ~ 10^9 cm^-2) resistance peak around charge neutrality, by carrier mobility values exceeding 10^6 cm^2/V/s, by the o…
Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light absorption efficiency and to provide a gain mechanism where multiple charge carriers are created from one incident photon. Here, we take advantage of the strong light absorption in quantum dots and the two-dimensionality and high mobility of graphene to merge these materials into a hybrid system for photodetection with extremely high sensitivity. Exploiting char…
We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobility as high as 120,000 cm^2/Vs.
As the thinnest atomic membrane, graphene presents an opportunity to combine geometry, elasticity and electronics at the limits of their validity. The availability of reliable atomistic potentials for graphene allows unprecedented precise simulations of the mechanical response of atomic membranes. Here we describe the transport and electronic structure in the neighbourhood of conical singularities, the elementary excitations of the ubiquitous wrinkled and crumpled graphene that occur in non-epitaxial suspended samples where shear stresses are unavoidable. We use a combination of atomistic mech…
Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems. Significant progress has been made to achieve high mobility black phosphorus two-dimensional electron gas (2DEG) since the development of the first black phosphorus field-effect transistors (FETs)$^{1-4}$. Here, we reach a milestone in developing high quality black phosphorus 2DEG - the observation of integer quantum Hall (QH) effect. We achieve high quality…
Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where screening effects are important. We show conclusively that, given the same bare Coulomb disorder, the 2D mobility for a given system increases monotonically with increasing valley degeneracy. We also show that the temperature and the parallel magnetic field dependence of the 2D conductivity is strongly enhanced by increasing valley degeneracy. We analytically co…
Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes Bi2O2Se from other semiconductors. We found that the electron donor states lie above the lowest conduction band. Thus, electrons get spontaneously ionized from donor sites (e.g., Se vacancies) without involving the thermal activation, different from the donor ionization in conventional semiconductors. Consequently, the resistance decreases as reducing the temp…
Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing these effects in GaAs-based systems, where electron interactions are relatively weak, requires sub-kelvin temperatures and record-high electron mobilities, rendering some of the most interesting states too fragile and difficult to access. This prompted a quest for new high-mobility systems with stronger electron interactions. Recently, fractional-quantized …
Many thermoelectrics like Bi exhibit Rashba spin-orbit surface bands for which topological insulator behavior consisting of ultrahigh mobilities and enhanced thermopower has been predicted. Bi nanowires realize surface-only electronic transport since they become bulk insulators when they undergo the bulk semimetal-semiconductor transition as a result of quantum confinement for diameters close to 50 nm. We studied 20-, 30-, 50- and 200-nm trigonal Bi wires. Shubnikov-de Haas magnetoresistance oscillations caused by surface electrons and bulklike holes enable the determination of their densities…
Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and the spacer thickness. In particular an increase of the quantum well width from an optimal value of 15 nm to 18 nm is accompanied by a 35 % reduction of the hole mobility. The quality of ultrahigh-mobility…
The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer semiconductors are evaluated. The roles of individual scattering rates are tracked as the 2D electron gas density is varied over orders of magnitude at various temperatures. From a comparative study of the individual scattering mechanisms, we conclude that all current reported values of mobilities in atomically thin transition-metal dichalcogenide semiconductors …
The 2D electrons trapped in vacuum near the atomically thin dielectric (ATD, mono- or $N$-layer film of $h$-BN or transition metal dichalcogenide) are considered. ATD is suspended above the back gate and forms the capacitor which is controlled by the biased voltage determining 2D concentration, $n_{2D}$. It is found that the leakage current through ATD is negligible and effect of the polarizability of ATD is weak if $N\leq 5$. At temperatures $T=0.1÷$15 K and $n_{2D}=5\times 10^8÷10^{10}$ cm$^{-2}$, one deals with the Boltzmann liquid of the macroscopic thickness $\sim$100 A. Due to bending of…
We developed a multi-level lithography process to fabricate graphene p-n-p junctions with the novel geometry of contactless, suspended top gates. This fabrication procedure minimizes damage or doping to the single atomic layer, which is only exposed to conventional resists and developers. The process does not require special equipment for depositing gate dielectrics or releasing sacrificial layers, and is compatible with annealing procedures that improve device mobility. Using this technique, we fabricate graphene devices with suspended local top gates, where the creation of high quality graph…
The exceptionally high mobility of carriers in graphene is one of its defining characteristics, especially in view of potential applications. Therefore it is of both practical and fundamental importance to understand the mechanisms responsible for limiting the values of mobility. The aim of the paper is to study theoretically one such mechanism, i.e. scattering on ripples. The transport properties of rippled graphene are studied using using single-band tight-binding model. Both the bond-length variation, corresponding to the vector potential in the effective mass picture, and fluctuating scala…
Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that non-suspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ~ 0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a gapped semiconductor, in…
One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended graphen. When supported on a surface, graphene shows a strongly reduced mobility, and an especially severe reduction for temperatures above 200 K. A temperature-dependent mobility reduction could be explained by scattering of carriers with phonons, but this is expected to be weak for pristine, weakly-doped graphene. The mobility reduction has therefore been ascrib…
We consider a problem of obtaining information about the scattering potentials of the monolayer graphene sample using available experimental data on its resistance. We have in mind a development of the study describing super-high mobility electrons in suspended samples without chemical doping. As far as practical absence of the doping impurities in this case makes the Coulomb scattering negligible, we consider models of the short-range scattering potentials. The model of short-range potential is assumed to be supported by the close vicinity of the ring or the circumference of a circle. The dia…
We have found that the Berry phase of bilayer graphene becomes from 2$π$ estimated by Shubnikov-de Haas oscillations when the A-B stacked pristine bilayer graphene experiences the Li-intercalation and sequential Li-desorption process in ultrahigh vacuum. Furthermore, the mobility of such processed bilayer graphene increases around four times larger, ~ 8,000 cm2/V$\cdot$s, than that of the pristine bilayer graphene. This is mainly due to increment of the scattering time and decrement of the cyclotron mass, which can be interpreted as a result of the change of the stacking structure of bilayer g…
We investigate the temperature dependence of the conductivity in ballistic graphene using Landauer transport theory. We obtain results which are qualitatively in agreement with many features recently observed in transport measurements on high mobility suspended graphene. The conductivity σat high temperature T and low density n grows linearly with T, while at high n we find σ~ |n|^1/2 with negative corrections at small T due to the T-dependence of the chemical potential. At moderate densities the conductivity is a non-monotonic function of T and n, exhibiting a minimum at T=0.693 \hbar v |n|^1…
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to amb…
