基于少层黑磷封装的量子输运型控纳米器件
Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport
摘要：
我们证明，六方氮化硼（h-BN）片的原子级薄的黑磷（BP）的封装是非常有效的，最大限度地减少量子传输纳米器件的BP沟道材料的制造过程中引起的界面杂质。通过对BP封装结构进行选择性刻蚀后沉积合适的金属电极，实现了具有高迁移率和可控类型的高稳定性BP纳米器件。铬和钛是用于BP沟道的合适的金属电极，以控制从p型单极特性到双极特性的转变，因为功函数不同。在低温下，电子和空穴的迁移率分别达到了6000 $cm^2V^{-1}s^{-1}$和8400 $cm^2V^{-1}s^{-1}$。高迁移率的BP器件使得能够在实验室磁场中研究具有不可区分的塞曼效应的量子振荡。
英文摘要：
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 $cm^2V^{-1}s^{-1}$ and 8400 $cm^2V^{-1}s^{-1}$ are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
