芳基官能化作为单层石墨烯器件带隙工程的途径
Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices
摘要：
化学功能化是石墨烯带隙工程的一条很有前途的途径。我们将硝基苯基化学接枝到剥离的单层石墨烯片上，以基底支撑或自支撑膜的形式。我们的输运测量表明，非悬浮功能化石墨烯表现为颗粒状金属，具有可变的范围跳跃输运和在低温下的迁移率间隙~ 0.1 eV。对于悬浮的石墨烯，允许在两个表面上的功能化，我们展示了它的电子性能从粒状金属到带隙半导体的调谐，其中电荷传输通过热激活发生在间隙~ 80毫电子伏。这种非侵入性和可扩展的功能化技术为石墨烯电子器件的CMOS兼容带隙工程铺平了道路。
英文摘要：
Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that non-suspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ~ 0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a gapped semiconductor, in which charge transport occurs via thermal activation over a gap ~ 80 meV. This non-invasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices.
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