We investigate the temperature dependence of the conductivity in ballistic graphene using Landauer transport theory. We obtain results which are qualitatively in agreement with many features recently observed in transport measurements on high mobility suspended graphene. The conductivity σat high temperature T and low density n grows linearly with T, while at high n we find σ~ |n|^1/2 with negative corrections at small T due to the T-dependence of the chemical potential. At moderate densities the conductivity is a non-monotonic function of T and n, exhibiting a minimum at T=0.693 \hbar v |n|^1/2 where v is the Fermi velocity. We discuss two kinds of Fabry-Perot oscillations in short nanoribbons and their stability at finite temperatures.
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
We study a suspended graphene sheet subject to the electric field of a gate underneath. We compute the elastic deformation of the sheet and the corresponding effective gauge field, which modifies the electronic transport. In a clean system the two-terminal conductance of the sample is reduced below the ballistic limit and is almost totally suppressed at low carrier concentrations in samples under tension. Residual disorder restores a small finite conductivity.
We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectric film using Wentzel-Kramers-Brillouin approximation. Both self-consistent numerical modeling of the electric field and space charge dynamics in the heterostructure and approximate analytical theory show that the domain wall contact with the surface creates p-n junction in graphene channel. We calculated that the carriers' concentration induced in graphene by uncompensated ferroelectric dipoles originated from the sp…
Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribbons are diffusive conductors. Detailed photoemmision and microscopy studies show that 6H-SiC sidewalls zig-zag ribbons are metallic with a pair of n-doped edge states associated with asymmetric edge terminations, In contrast, 4H-SiC zig-zag ribbons are strongly bonded to the SiC; severely distorting…
Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for …
We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is strongly enhanced due to limited screening capacity of Dirac quasiparticles. Accordingly, the junction resistance is lower than estimated in previous literature.
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same magnitude ($\approx 1/3$) in ballistic and diffusive graphene devices and is therefore of limited applicability. We consider a two-terminal geometry where the graphene flake is contacted by narrow metallic leads. We propose that the dependence of the conductance on the position of one of the leads, a conductance profile, can give us insight into the charge flow,…
We report on the fabrication and room temperature measurements of a high frequency electrical signal detector. The device is based on the ballistic transport in graphene to detect a high frequency signal. The observed response is linear in the considered power range (-40dBm - 0dBm) and exhibits a sensitivity as high as 10 Volts/Watt. Finally the device detected signals up to 50GHz with a maximum response at 10GHz. This device outperforms any previously reported carbon based detectors in frequency response and compares to current state of the art Schottky based detectors in dynamic range.
Very recently, it was demonstrated explicitly that a zigzag graphene nanoribbon (GNR) exhibits a crossover of conductance from G0 to G0/2 with increasing the length (G0 = 2e2/h is the quantum of conductance) even at room-temperature [Baringhaus, et al. Nature 506, 349 (2014)]. Such a result is puzzling as none of previous theories seem to match the experimental observations. Here, we propose a model to explain the crossover from double-channel to single-channel ballistic transport in zigzag GNR. The sp3 distortion of carbon atoms at the GNR edges induces a large spin-orbit coupling on the edge…
We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. In contrast, devices with lower edge disorder (< 1 nm roughness) are strongly influenced by the fringing electrostatic field at graphene boundaries, in quantitative agreement with theoretical calc…
Graphene kirigami (patterned cuts) can be an effective way to improve some of the graphene mechanical and electronic properties. In this work, we report the first study of the mechanical and ballistic behavior of single and multilayered graphene pyramid kirigami (GKP). We have carriedout fully atomistic reactive molecular dynamics simulations. GPK presents a unique kinetic energy absorption due to its topology that creates multi-steps dissipation mechanisms, which block crack propagation. Our results show that even having significantly less mass, GKP can outperform graphene structures with sim…
This manuscript deals with time flow in ballistic graphene devices. It is commonly believed that in the ballistic regime the traversal time of carriers in gated graphene at normal incidence is just the ratio of the length of the device and the Fermi velocity. However, we show that the traversal time is much slower if the influence of metallic contacts on graphene is considered. Even the transmission at normal incidence becomes smaller than 1, contradicting yet another common belief. These unexpected effects are due to the transformation of Schrodinger electrons in the metallic contact into Dir…
We investigate electron-phonon couplings, scattering rates, and mean free paths in zigzag-edge graphene strips with widths of the order of 10 nm. Our calculations for these graphene nanostrips show both the expected similarity with single-wall carbon nanotubes (SWNTs) and the suppression of the electron-phonon scattering due to a Dirichlet boundary condition that prohibits one major backscattering channel present in SWNTs. Low-energy acoustic phonon scattering is exponentially small at room temperature due to the large phonon wave vector required for backscattering. We find within our model th…
Hydrodynamic phonon transport was recently predicted as an important regime for phonon transport in graphitic materials. Many of past studies on hydrodynamic phonon transport have focused on the cases where the hydrodynamic regime predominates over other regimes such that hydrodynamic features can be clearly observed. However, this often requires stringent conditions of temperature and sample size. In many cases, a single regime does not dominate other regimes, but all three regimes - ballistic, hydrodynamic, and diffusive regimes - exist to some extent. Here we assess the extent of three regi…
Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. Here, we study these regimes by performing quantum simulations of graphene nonlocal spin valves. We find that conventional spin diffusion theory fails to capture the crossover to the balli…
In this letter we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ~μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.
In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the "Top-of-the-barrier" approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model's validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both …
Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the phonon mean free path (mfp). Here, we find that short, quarter-micron graphene samples reach ~35% of the ballistic heat conductance limit up to room temperature, enabled by the relatively large phonon mfp (~100 nm) in substrate-supported graphene. In contrast, patterning similar samples into nanoribbons (GNRs) leads to a diffusive heat flow regime that is contro…
We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance strongly depends on the angle between the two graphene layers and identify three qualitatively different regimes. For large angles ($θ\gtrsim 10^{\circ}$) there are strong commensurability effects for incommensurate angles the low energy conductance approaches that of two disconnected layers, while sharp conductance features correlate with commensurate angles…
Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an oblique top gate. Graphene FETs with a top gate inclination angle of 45 degrees and a drain-source distance of 400 nm were fabricated on a chip cut from a 4 inch graphene wafer grown by CVD. From the 60 measured devices, NDR was observed only in the regions where the CVD graphene displays the Raman signature of defectless monolayers. In other specific positions on the wafer, where graphene quality was not high enough and…
We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a distance of 30 nm, the tilting angle being of 45o with respect to source and drain electrodes distanced at 190 nm. Electric measurements reveal specific properties of ballistic carrier transport, i.e. nonlinear drain voltage-drain current dependence, showing a saturation region, and negative differential resistance at certain bias voltages, which cannot be explained without physical mechanisms related to ballistic transp…
We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from 30000 to 36000 cm2/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to 5 x 10^-9 μm2 Hz^-1, which is a factor of x5 - x10 lower than that in non-e…
We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed clear resistance enhancement around the np+n regime, which is in good agreement with the numerical simulation. The tunable reflectance of ballistic carriers could be an elementary and important step for…
We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.
We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.
The full counting statistics of the charge transport through an undoped graphene sheet in the presence of smooth disorder is studied. At the Dirac point both in clean and diffusive limits, transport properties of a graphene sample are described by the universal Dorokhov distribution of transmission probabilities. In the crossover regime, deviations from universality occur which can be studied analytically both on ballistic and diffusive sides. In the ballistic regime, we use a diagrammatic technique with matrix Green functions. For a diffusive system, the sigma model is applied. Our results ar…
Graphene is a fascinating material for exploring fundamental science questions as well as a potential building block for novel electronic applications. In order to realize the full potential of this material the fabrication techniques of graphene devices, still in their infancy, need to be refined to better isolate the graphene layer from the environment. We present results from a study on the influence of extrinsic factors on the quality of graphene devices including material defects, lithography, doping by metallic leads and the substrate. The main finding is that trapped Coulomb scatterers …
We study the effect of uniaxial strain on the transmission and the conductivity across a strain-induced barrier in graphene. At variance with conventional studies, which consider sharp barriers, we consider a more realistic, smooth barrier, characterized by a nonuniform, continuous strain profile. Our results are instrumental towards a better understanding of the transport properties in corrugated graphene.
Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed description is given of the fabrication of bottom and different top-gate structures, which enable the realization of complex graphene structures. We have studied the basic building block, the p-n junction in detail, where a striking oscillating pattern was observed, which can be traced back to Fabry-Perot oscillations that are localized in the electronic cavities fo…
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as a function of gate voltage, magnetic field, bias, and temperature exhibit characteristic Fabry-Perot oscillations in the cavities formed by the pn junction and each of the contacts, with transport occurring in the ballistic regime. Our results demonstrate the possibility to achieve a high degree of control on the local electronic properties of ultra-clean su…
The process of coherent creation of particle - hole excitations by an electric field in graphene is quantitatively described beyond linear response. We calculate the evolution of current density, number of pairs and energy in ballistic regime for electric field E using the tight binding model. While for small ballistic flight times the current is linear in E and independent of time, for larger ballistic times the current increases and finally at yet larger times Bloch oscillations set in. It is shown that the number of pairs follows the 2D generalization of the Schwinger's creation rate only o…
The minimum conductivity value as well as the linear dependence of conductivity on the charge density near the Dirac point in single and doublelayer graphene is derived from the energy-time uncertainty principle applied to ballistic charge carriers.
Ballistic transport was studied in a multiple-band system consisting of an antidot lattice of AB-stacked trilayer graphene. The low temperature magnetoresistance showed commensurability peaks arising from matching of the antidot lattice period and radius of cyclotron orbits for each mono- and bilayer-like band in AB stacked trilayer graphene. The commensurability peak of the monolayer-like band appeared at a lower magnetic field than that of the bilayer-like band, which reflects the fact that the Fermi surface of the bilayer-like band is larger than that of monolayer-like band. Rotation of the…
Graphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance ($R_{nl}$) near the secondary Dirac point (SDP) in ballistic graphene/hBN superlattices have been interpreted as arising due to the quantum valley Hall state. We report hBN/graphene/hBN superlattices in which $R_{nl}$ at SDP is negligible, but below 60 K approaches the value of $h/2e^{2}$ in zero magnetic field at the primary Dirac point with a characteristic decay length of 2 $μ$m. Furthermore, nonlocal transport transmission probabilities…
We study the localization properties of electrons in incommensurate twisted bilayer graphene for small angles, encompassing the narrow-band regime, by numerically exact means. Sub-ballistic states are found within the narrow-band region around the magic angle. Such states are delocalized in momentum-space and follow non-Poissonian level statistics, in contrast with their ballistic counterparts found for close commensurate angles. Transport results corroborate this picture: for large enough systems, the conductance decreases with system size for incommensurate angles within the sub-ballistic re…
We study the linear Hall response of 2D ballistic system on inhomogeneous magnetic field. We establish that in classical limit the Hall conductivity response on local magnetic field is quantized in units of $α_H \equiv \frac{e^3}{2 π^2 \hbar c}$. The quantized value depends on the point where the field is applied, this dependence being irregular in chaotic billiards. The phenomenon allows for direct tracing of special electron trajectories that belong to fractal repellor. We discuss how quantum effects smooth the quantization.
An analytic theory of electron transport in disordered graphene in a ballistic geometry is developed. We consider a sample of a large width W and analyze the evolution of the conductance, the shot noise, and the full statistics of the charge transfer with increasing length L, both at the Dirac point and at a finite gate voltage. The transfer matrix approach combined with the disorder perturbation theory and the renormalization group is used. We also discuss the crossover to the diffusive regime and construct a ``phase diagram'' of various transport regimes in graphene.
The current and the shot noise in a graphene sheet were analyzed in the ballistic regime for arbitrary voltage drops between leads and the sheet in the limit of infinite aspect ratio of the sheet width to its length, when quantization of transversal wave vectors is not essential. The cases of coherent and incoherent ballistic transport were compared. At high voltages the difference with coherent transport is not essential. But at low voltages conductance and Fano-factor dependences for incoherent transport become non-monotonous so that the conductance has a minimum and the Fano factor has a ma…
In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until the channel is completely emptied. The measurements are supported by tight-binding transport calculations including the full electrostatics of the sample.
We investigated ultrafast carrier dynamics in graphene with near-infrared transient absorption measurement after intense half-cycle terahertz pulse excitation. The terahertz electric field efficiently drives the carriers, inducing large transparency in the near-infrared region. Theoretical calculations using the Boltzmann transport equation quantitatively reproduce the experimental findings. This good agreement suggests that the intense terahertz field should promote remarkable impact ioniza- tion process, which leads to suppression of optical phonon emission and results in efficient carrier t…
Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based numerical approach, which is developed for calculating transmission and reflection coefficients with a dynamically-tunable (time-dependent bias field) barrier-potential profile, are compared with those of both an analytical model for a static square-potential barrier and a perturbation theory using Wentzel-Kramers-Brillouin (WKB) approximation. For a biased barrie…
The thermal conductivity of doped graphene flake of finite size is investigated with emphasis on the influence of mass of substituting atoms on this property. It is shown that the graphene doping by small concentrations of relatively heavy atoms results in a disproportionately impressive drop of lattice thermal conductivity.
For a thermal conductivity that is spatially uniform and independent of temperature, Fourier's law of heat transfer predicts a curl-free heat-flux. In the quasi-ballistic phonon transport regime, where the Fourier law breaks down, it has been proven starting from the Boltzmann transport equation that the constitutive relation for the heat-flux contains a solenoidal (circulatory) term with zero divergence and non-zero curl. In this paper we show how to reduce the effective thermal conductivity of a material with dimensions on the same scale as the phonon mean-free path, by exploiting the soleno…
The thermal properties of graphene-based materials are theoretically investigated. The fourth-nearest neighbor force constant method for phonon properties is used in conjunction with both the Landauer ballistic and the non-equilibrium Green's function techniques for transport. Ballistic phonon transport is investigated for different structures including graphene, graphene antidot lattices, and graphene nanoribbons. We demonstrate that this particular methodology is suitable for robust and efficient investigation of phonon transport in graphene-based devices. This methodology is especially usef…
We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for technology applications. It encompasses the demands for scalable fabrication as well as for ultra-fast response due to weak coupling to environment. The fabricated devices exhibited initially a weak field-effect response with substantial positive ($p$) doping which transformed into weak negative ($n$) doping upon current annealing at the temperature of 4 Kelvin…
We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the concentration of impurities and the incident energy. In turn, the conductance computed using the Landauer formalism shows a similar behavior to those found in experimental works as a function of the applied voltage for different concentrations of impurities in the limit of low temperatures. In the limit of zero bias voltage, the conductance shows a minimum value which …
We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.
We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect.
We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a 130-nm-wide local gate, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated indepe…
We study the ballistic conductivity of graphene bilayer in the presence of next-nearest neighbor hoppings between the layers. An undoped and unbiased system was found in Ref. [1] to show a nonuniversal (length-dependent) conductivity $σ(L)$, approaching the value of $σ_\star=3/π\simeq{}0.95$ for large $L$. Here we demonstrate one-parameter scaling and determine the scaling function $β(σ)=d\ln{}\!σ/d\ln{}\!L$. The scaling flow has an attractive fixed point [$\,β(σ_\star)=0$, $β'(σ_\star)<0\,$] reproducing the scenario predicted for random impurity scattering of Dirac fermions with Coulomb repul…
Graphene is a 2-dimensional (2D) carbon allotrope with the atoms arranged in a honeycomb lattice. The low-energy electronic excitations in this 2D crystal are described by massless Dirac fermions that have a linear dispersion relation similar to photons. Taking advantage of this optics-like electron dynamics, generic optical elements like lenses, beam splitters and wave guides have been proposed for electrons in engineered ballistic graphene. Tuning of these elements relies on the ability to adjust the carrier concentration in defined areas, including the possibility to create bipolar regions …
The intrinsic values of the carriers mobility and density of the graphene layers inside graphite, the well known structure built on these layers in the Bernal stacking configuration, are not well known mainly because most of the research was done in rather bulk samples where lattice defects hide their intrinsic values. By measuring the electrical resistance through microfabricated constrictions in micrometer small graphite flakes of a few tens of nanometers thickness we studied the ballistic behavior of the carriers. We found that the carriers' mean free path is micrometer large with a mobilit…
The interplay of graphene and superconductivity has attracted great interest for understanding the two-dimensional Dirac Fermion physics and for superconducting device applications. In previous work, graphene-superconductor junctions fabricated on standard SiO2 substrates were highly disordered. Due to charge carrier scattering and potential fluctuations, the expected intrinsic properties of graphene combined with superconductors remained elusive to experimental observations. We propose suspended graphene-superconductor junctions as an effective solution to the problem. Here, we show the fabri…
We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current $I_c$. An exceptionally large $I_cR_N$ product close to $2Δ_0/e$ ($R_N$; normal-state junction resistance, $Δ_0$ ; zero-temperature superconducting energy gap) is an indication of SB strong Josephson coupling. $I_c$ shows a temperature dependence inconsistent with the conventional short-junction-like behavior; $I_c(T)$ curves deviate systematically from the standard Kul…
The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path can only be extracted by taking into account both, the electrical characteristics and the channel length dependent mobility. In doing so we find a ballistic mean free path of 300nm at room-temperature for a carrier concentration of ~1e12/cm2 and that a substantial series resistance of around 300ohmum has to be taken into account. Furthermore, we demonstrate first quantum capacitance measurements on single-layer graphene devices.
Graphene samples can have a very high carrier mobility if influences from the substrate and the environment are minimized. Embedding a graphene sheet into a heterostructure with hexagonal boron nitride (hBN) on both sides was shown to be a particularly efficient way of achieving a high bulk mobility. Nanopatterning graphene can add extra damage and drastically reduce sample mobility by edge disorder. Preparing etched graphene nanostructures on top of an hBN substrate instead of SiO2 is no remedy, as transport characteristics are still dominated by edge roughness. Here we show that etching full…
An exact solution is obtained for the electromagnetic field due to an electric current in the presence of a surface conductivity model of graphene. The graphene is represented by an infinitesimally-thin, local and isotropic two-sided conductivity surface. The field is obtained in terms of dyadic Green's functions represented as Sommerfeld integrals. The solution of plane-wave reflection and transmission is presented, and surface wave propagation along graphene is studied via the poles of the Sommerfeld integrals. For isolated graphene characterized by complex surface conductivity, a proper tra…
