A broad and a narrow level of a quantum dot connected to two external leads may swap their respective occupancies as a function of an external gate voltage. By mapping this problem onto a multi-flavored Coulomb-gas we show that such population switching is not abrupt. However, trying to measure it by adding a third electrostatically coupled lead may render this switching an abrupt first order quantum phase transition. This is related to the interplay of the Mahan mechanism versus the Anderson orthogonality catastrophe, in similitude to the Fermi edge singularity. A concrete setup for experimental observation of this effect is also suggested.
Devices for nano- and molecular size electronics are currently a focus of research aimed at an efficient current rectification and switching. Current switching due to conformational changes in the molecules is slow, on the order of a few kHz. Fast switching on the order of 1 THz may be achieved, at least in principle, in a degenerate molecular quantum dot with strong coupling of electrons with vibrational excitations. We show that the mean-field approach fails to properly describe intrinsic molecular switching and present an exact solution to the problem.
We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined states : insulating, normal conduction and resonant conduction.
The spin-orbit coupling influences the total spin of semiconductor quantum dots. We analyze the theoretical prediction for the combined effects of spin-orbit coupling, weak vertical magnetic fields and deformation of the dot. Our results allow the characterization of the quantum dots as spin switches, controllable with electric gates.
Switching of a single plasmon interacting with equally spaced quantum dots coupled to one-dimensional surface plasmonic waveguide is investigated theoretically via the real-space approach. We showed that the transmission and reflection of a single plasmon can be switched on or off by dynamically tuning and changing the number of the equal transition frequencies of the quantum dots.
We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. It was found that tuning of the external field frequency induces fast multiple tunneling current switching and leads to the negative tunneling conductivity. Special role of multi-electrons states was demonstrated. Moreover we revealed conditions for bistable behavior of the tunneling current in the coupled QDs with Coulomb correlations.
Computational studies based on 6 band k$\cdot$p theory are employed on lens-shaped III-nitride quantum dots (QDs) with focus on the polarization properties of the optical interband transitions. The results predict pronounced linear polarization of the ground-state related transitions for asymmetric QDs of a material with small split-off energy. It is demonstrated that a moderate externally applied electric field can be used to induce a linear polarization and to control its direction. InN is found to be the most efficient choice for dynamic polarization switching controlled by an electric fiel…
We study the nonequilibrium spin current through a quantum dot consisting of two localized spin-1/2 coupled to two ferromagnetic insulators. The influence of an intra-dot magnetic field and exchange coupling, different dot-reservoir coupling configurations, and the influence of magnon chemical potential differences vs. magnetic field gradients onto the spin current are examined. We discuss various spin switching mechanisms and find that, in contrast to electronic transport, the spin current is very sensitive to the specific coupling configuration and band edges. In particular, we identify 1- a…
We show that the Coulomb blockade in parallel dots pierced by magnetic flux $Φ$ completely blocks the resonant current for any value of $Φ$ except for integer multiples of the flux quantum $Φ_0$. This non-analytic (switching) dependence of the current on $Φ$ arises only when the dot states that carry the current are of the same energy. The time needed to reach the steady state, however, diverges when $Φ\to nΦ_0$.
Employing oval shaped quantum billiards connected by quantum wires as the building blocks of a linear quantum dot array, we calculate the ballistic magnetoconductance in the linear response regime. Optimizing the geometry of the billiards, we aim at a maximal finite- over zero-field ratio of the magnetoconductance. This switching effect arises from a relative phase change of scattering states in the oval quantum dot through the applied magnetic field, which lifts a suppression of the transmission characteristic for a certain range of geometry parameters. It is shown that a sustainable switchin…
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide single-electron charge sensing on microsecond timescales. Simultaneously, rf reflectometry allows fast measurement of transport through the nanotube dot. Charge stability diagrams for the nanotube dot in the Coulomb blockade regime show extended Coulomb diamonds into the high-bias regime, as well as even-odd filling effects, revealed in charge sensing data.
We determine the spin exchange coupling J between two electrons located in two vertically tunnel-coupled quantum dots, and its variation when magnetic (B) and electric (E) fields (both in-plane and perpendicular) are applied. We predict a strong decrease of J as the in-plane B field is increased, mainly due to orbital compression. Combined with the Zeeman splitting, this leads to a singlet-triplet crossing, which can be observed as a pronounced jump in the magnetization at in-plane fields of a few Tesla, and perpendicular fields of the order of 10 Tesla for typical self-assembled dots. We use …
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating quantum transport phenomena and outstanding optical functionalities. In this paper, we r…
Josephson current of spin-entangled electrons through the two branches of a SQUID-like structure with two quantum dots exhibits a magnetic-flux response different from the conventional Josephson current. Due to their interference, the period of maximum Josephson current changes from $h/2e$ to $h/e$, which can be used for detecting the Cooper-pair splitting efficiency. The nonlocal spin entanglement provides a quantum mechanical functionale for switching on and off this novel Josephson current, and explicitly a switch is formulated by including a pilot junction. It is shown that the device can …
We investigate phase coherent electronic transport in an open quantum system, which consists of quantum dots side-coupled to a nanowire. It is demonstrated that coherent switching can be characterized by adjusting the electronic energy. A comparative analysis of quantum coherence effects in side-coupled quantum-dot systems is presented. Our results demonstrate the relevance of electronic nanodevices based on coherent switching by appropriately detuning the side-coupled quantum dots that are located at variable distance along a wire.
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot.
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quan…
We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find {\it two} sharp trans…
Quantum computing and quantum communication are remarkable examples of new information processing technologies that arise from the coherent manipulation of spins in nanostructures. We review our theoretical proposal for using electron spins in quantum-confined nanostructures as qubits. We present single- and two-qubit gate mechanisms in laterally as well as vertically coupled quantum dots and discuss the possibility to couple spins in quantum dots via exchange or superexchange. In addition, we propose a new stationary wave switch, which allows to perform quantum operations with quantum dots or…
The charge transport properties of zero-temperature multi-orbital quantum dot systems with one dot coupled to leads and the other dots coupled only capacitatively are studied within density functional theory. It is shown that the setup is equivalent to an effective single impurity Anderson model. This allows to understand the level occupation switching effect as transitions between ground states of different integer occupations in the uncoupled dots. Level occupation switching is very sensitive to small energy differences and therefore also to the details of the parametrized exchange-correlati…
Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing…
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole …
We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are observed in the resonator response. rf-reflectometry allows measurements of the DQD charge stability diagram in the few-electron regime even when the dc current through the device is too small to be measured. For a signal-to-noise ratio of one, we estimate a minimum charge detection time of 350 microseconds at interdot charge transitions and 9 microseconds for cha…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.
Individual self-assembled Quantum Dots and Quantum Posts are studied under the influence of a surface acoustic wave. In optical experiments we observe an acoustically induced switching of the occupancy of the nanostructures along with an overall increase of the emission intensity. For Quantum Posts, switching occurs continuously from predominantely charged excitons (dissimilar number of electrons and holes) to neutral excitons (same number of electrons and holes) and is independent on whether the surface acoustic wave amplitude is increased or decreased. For quantum dots, switching is non-mono…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon …
Measurements of the transmission phase in transport through a quantum dot embedded in an Aharonov-Bohm interferometer show systematic sequences of phase lapses separated by Coulomb peaks. Using a two-level quantum dot as an example we show that this phenomenon can be accounted for by the combined effect of asymmetric dot-lead coupling and interaction-induced "population switching" of the levels, rendering this behavior generic. In addition, we use the notion of spectral shift function to analyze the relationship between transmission phase lapses and the Friedel sum rule.
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by a radio-frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical acc…
We analyze intermittency in intensity and fluorescence lifetime of CsPbBr$_3$ perovskite quantum dots by applying unbiased Bayesian inference analysis methods. We apply changepoint analysis (CPA) and a Bayesian state clustering algorithm to determine the timing of switching events and the number of states between which switching occurs in a statistically unbiased manner, which we have benchmarked particularly to apply to highly multistate emitters. We conclude that perovskite quantum dots display a plethora of gray states in which brightness broadly speaking correlates inversely with decay rat…
Density functional theory calculations are performed on phosphorene quantum dots having different shapes and edge terminations to investigate their structure stability, electronic properties, and gas sensing ability. All the selected phosphorene dots, namely hexagonal and triangular flakes with armchair and zigzag terminations, have positive binding energies which insure their stability even though the bond lengths are much longer than those in the infinite phosphorene layer. It is found that all the selected hydrogen passivated quantum dots have a wide energy gap. In contrast, the partial pas…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic control gates, together with an Al-AlOx single-electron transistor, were positioned on the substrate surface, capacitively coupled to the buried dots. The individual double-dot charge states were probed using…
We propose a controlled experiment to clarify the physical mechanism causing phase lapses of the amplitude for electron transmission through nanoscale devices. Such lapses are generically observed in valleys between adjacent Coulomb--blockade peaks. The experiment involves two quantum dots embedded in the same arm of an Aharonov--Bohm interferometer. It offers a decisive test of "population switching", one of the leading contenders for an explanation of the phenomenon.
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm s…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multi-gate designs. We show here that the charge state of quantum dots formed in a CMOS nanowire device can be sensed by using floating gates to electrostatically couple it to a rem…
As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pumping fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been investigated for single quantum dots of different size present in the same sample and compared with the direct injection of spectator electrons from nearby donors.
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2$\times$2 array, and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, 'floating' electrodes. With one…
Lapses of transmission phase in transport through quantum dots are ubiquitous already in the absence of interaction, in which case their precise location is determined by the signs and magnitudes of the tunnelling matrix elements. However, actual measurements for a quantum dot embedded in an Aharonov-Bohm interferometer show systematic sequences of phase lapses separated by Coulomb peaks -- an issue that attracted much attention and generated controversy. Using a two-level quantum dot as an example we show that this phenomenon can be accounted for by the combined effect of asymmetric dot-lead …
Wilson's Numerical Renormalization Group (NRG) is so far the only nonperturbative technique that can reliably access low-energy properties of quantum impurity systems. We present a recent extension of the method, the DM-NRG, which yields highly accurate results for dynamical quantities at arbitrary frequencies and temperatures. As an application, we determine the spectrum of a quantum dot in an external magnetic field. Furthermore, we discuss magnetic impurities with orbital degeneracy, which have been inferred in recent experiments on quantum dots in an Aharonov-Bohm geometry. It is demonstra…
A global quantitative picture of the phonon-induced two-electron spin relaxation in GaAs double quantum dots is presented using highly accurate numerical calculations. Wide regimes of interdot coupling, magnetic field magnitude and orientation, and detuning are explored in the presence of a nuclear bath. Most important, the unusually strong magnetic anisotropy of the singlet-triplet relaxation can be controlled by detuning switching the principal anisotropy axes: a protected state becomes unprotected upon detuning, and vice versa. It is also established that nuclear spins can dominate spin rel…
Recently, nanomaterials are arousing increasing interest and a wide variety of opto-electronic devices have been developed, such as light-emitting diodes, solar cells, and photodetectors. However, the study of the light emission properties of quantum dots under pressure is still limited. By using a joint theoretical and experimental approach, we developed a polymer waveguide doped with CdSe quantum dots for pressure sensing. Absorption and re-emission effects of the quantum dots are affected by the pressure applied on the waveguide. Specifically, since both amplitude and wavelength are modulat…
In Si quantum dots, valley degree of freedom, in particular the generally small valley splitting and the dot-dependent valley-orbit phase, adds complexities to the low-energy electron dynamics and the associated spin qubit manipulation. Here we propose a four-level model to extract tunnel coupling information for a Si double quantum dot (DQD). This scheme is based on a charge sensing measurement on the ground state as proposed in the widely used protocol for a GaAs double dot [DiCarlo et. al., PRL 92. 226801]. Our theory can help determine both intra- and inter-valley tunnel coupling with high…
We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit.
We analyzed theoretically localized charge relaxation in a double quantum dot (QD) system coupled with continuous spectrum states in the presence of localized electrons Coulomb interaction in a single QD. We have found that for a wide range of system parameters charge relaxation occurs through two stable regimes with significantly different relaxation rates. A peculiar time moment exists in the system at which rapid switching between stable regimes takes place. We consider this phenomenon to be applicable for creation of active elements in nano-electronics based on the fast transition effect b…
For a variety of quantum dots, the widths of different single-particle levels may naturally differ by orders of magnitude. In particular, the width of one strongly coupled level may be larger than the spacing between other, very narrow, levels. We found that in this case many consecutive Coulomb blockade peaks are due to occupation of the same broad level. Between the peaks the electron jumps from this level to one of the narrow levels and the transmission through the dot at the next resonance essentially repeats that at the previous one. This offers a natural explanation of the salient featur…
The transient response of a quantum dot with strong Coulomb interaction to a fast change in the gate potential, as well as the stationary ac-response to a slow harmonic variation of the gate potential are computed by means of a real-time diagrammatic expansion in the tunnel-coupling strength. We find that after a fast switching, the relaxation of charge and spin are governed by a single time constant each, which differ from each other due to Coulomb repulsion. We compare the response to a step potential with the $RC$ time extracted from the ac response.
We propose an all optical spin initialization and readout concept for single self assembled quantum dots and demonstrate its feasibility. Our approach is based on a gateable single dot photodiode structure that can be switched between charge and readout mode. After optical electron generation and storage, we propose to employ a spin-conditional absorption of a circularly polarized light pulse tuned to the single negatively charged exciton transition to convert the spin information of the resident electron to charge occupancy. Switching the device to the charge readout mode then allows us to pr…
Electronic structure and transport characteristics of coupled CdS and ZnSe quantum dots are studied using density functional theory and non equilibrium Greens function method respectively. Our investigations show that in these novel coupled dots, the frontier occupied and unoccupied molecular orbitals are spatially located in two different parts of the coupled dot, thereby indicating the possibility of asymmetry in electronic transport. We have calculated electronic transport through the coupled quantum dot by varying the coupling strength between the individual quantum dots in the limits of w…
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to z…
We investigate the transient nonequilibrium dynamics of a molecular junction biased by a finite voltage and strongly coupled to internal vibrational degrees of freedom. Using two different, numerical exact techniques, diagrammatic Monte Carlo and the multilayer multiconfiguration time-dependent Hartree method, we show that the steady state current through the junction may depend sensitively on the initial preparation of the system, thus revealing signatures of bistability. The influence of the bias voltage and the transient dynamics on the phenomenon of bistability is analyzed. Furthermore, a …
A two-electron system confined in two coupled semiconductor quantum dots is investigated as a candidate for performing quantum logic operations on spin qubits. We study different processes of swapping the electron spins by controlled switching on/off the exchange interaction. The resulting spin swap corresponds to an elementary operation in quantum information processing. We perform a direct time evolution simulations of the time-dependent Schroedinger equation. Our results show that -- in order to obtain the full interchange of spins -- the exchange interaction should change smoothly in time.…
We propose a version of functional renormalization-group (fRG) approach, which is, due to including Litim-type cutoff and switching off (or reducing) the magnetic field during fRG flow, capable describing singular Fermi liquid (SFL) phase, formed due to presence of local moments in quantum dot structures. The proposed scheme allows to describe the first-order quantum phase transition from "singular" to the "regular" paramagnetic phase with applied gate voltage to parallel quantum dots, symmetrically coupled to leads, and shows sizable spin splitting of electronic states in the SFL phase in the…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by undoped silicon tunnel barriers. Occupancy of the dots is controlled by surface gates and monitored using an aluminium single electron transistor which is capacitively coupled to the dots. We observe a charge stability diagram consistent with the designed many-electron double-dot system and this agrees well with capacitance modelling of the structure. We disc…
Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear array of three quantum dots, each containing a single spin polarized electron, and with nearest neighbor exchange coupling, acts as the universal NAND gate. The energy dissipated during switching this gate is the Landauer-Shannon limit of kTln(1/p) [T = ambient temperature and p = intrinsic gate error probability]. With present day technology, p = 1E-9 is a…
In analogy to the Coulomb and the Pauli spin blockade, based on the electrostatic repulsion and the Pauli exclusion principle respectively, the concept of valley blockade in Silicon nanostructures is explored. The valley parity operator is defined. Valley blockade is determined by the parity conservation of valley composition eigenvectors in quantum transport. A Silicon quantum changeover switch based on a triple of donor quantum dots capable to separate electrons having opposite valley parity by virtue of the valley parity conservation is proposed. The quantum changeover switch represents a n…
