We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2$\times$2 array, and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, 'floating' electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure.
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and tunnel coupling. In the regime of capacitive coupling we observe the phenomenon of spin blockade in a magnetic field and analyze the influence of capacitive interdot coupling on this effect.
We theoretically study electron interference in a ballistic electronic interferometer capacitively coupled to a quantum dot. The visibility of the interference is reduced when the dot has degenerate ground states with different excess charges. The degree of the reduction depends on system parameters such as the strength of the capacitive coupling, and the dependence is analyzed in the regime where the dwell time of electrons in the dot is much longer than the electron flight time through the interferometry region coupled to the dot. The result is consistent with recent experimental data.
We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a wide energy range. Charge stability diagrams and in particular individual triple point pairs allow to study the tunable capacitive inter-dot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points. We extract a mutual capacitive inter-dot coupling in the range of 2 - 6 meV and an inter-dot tunnel couplin…
We present a theoretical study of the detection of the decay time scales for a single-level quantum dot by means of a capacitively coupled sensor dot, which acts as an electrometer. We investigate the measurement back-action on the quantum-dot decay rates and elucidate its mechanism. We explicitly show that the setup can be used to measure the bare quantum-dot relaxation rates by choosing gate pulses that minimize the back-action. Interestingly, we find that besides the charge relaxation rate, also the rate associated to the fermion parity in the dot can be accessed with this setup.
We theoretically examine the capacitive coupling between two quantum dot hybrid qubits, each consisting of three electrons in a double quantum dot, as a function of the energy detuning of the double dot potentials. We show that a shaped detuning pulse can produce a two-qubit maximally entangling operation in $\sim$50ns without having to simultaneously change tunnel couplings. Simulations of the entangling operation in the presence of experimentally realistic charge noise yield two-qubit fidelities over 90%.
We study the dynamics of a charge qubit that is capacitively coupled to an open double quantum dot. Depending on the qubit state, the transport through the open quantum dot may be resonant or off-resonant, such that the qubit affects the current through the open double dot. We relate the initial qubit state to the magnitude of an emerging transient current peak. The relation between these quantities enables the readout of not only the charge but also the phase of the qubit.
We consider the hybrid setup formed by a metallic dot, capacitively coupled to a superconducting island S connected to a bulk superconductor by a Josephson junction. Charge fluctuations in S act as a dynamical gate and overscreen the electronic repulsion in the metallic dot, producing an attractive interaction between two additional electrons. As the offset charge of the metallic dot is increased, the dot charging curve shows positive steps ($+2e$) followed by negative ones ($-e$) signaling the occurrence of a negative differential capacitance. A proposal for experimental detection is given, a…
Strong electron correlations and interference effects are discussed in capacitively coupled side attached and embedded quantum dots. The finite - U mean field slave boson approach is used to study many-body effects. In the linear range the many-body resonances exhibit SU(4) Kondo or Kondo-Fano like character and their properties in the corresponding arms are close to the properties of embedded or T- shape double dot systems respectively. Breaking of the spin symmetry in one of the arms or in both allows for the formation of many-body resonances of SU(3) or SU(2) symmetries in the linear range.
A detailed study of the low-temperature physics of an interacting double quantum dot system in a T-shape configuration is presented. Each quantum dot is modeled by a single Anderson impurity and we include an inter-dot electron-electron interaction to account for capacitive coupling that may arise due to the proximity of the quantum dots. By employing a numerical renormalization group approach to a multi-impurity Anderson model, we study the thermodynamical and transport properties of the system in and out of the Kondo regime. We find that the two-stage-Kondo effect reported in previous works …
We study the two-qubit controlled-not gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while tunneling between the quantum dots that belong to different qubits is forbidden. Therefore, the two qubits interact exclusively through the direct Coulomb repulsion of the electrons. We find that entangling two-qubit gates can be performed by the electrical biasing of quantum dots and/or tuning of the tunneling matrix elements between the quantum dots within th…
We study theoretically Coulomb drag in capacitively coupled quantum dots (CQDs) -- a biasdriven dot coupled to an unbiased dot where transport is due to Coulomb mediated energy transfer drag. To this end, we introduce a master-equation approach which accounts for higher-order tunneling (cotunneling) processes as well as energy-dependent lead couplings, and identify a mesoscopic Coulomb drag mechanism driven by nonlocal multi-electron cotunneling processes. Our theory establishes the conditions for a nonzero drag as well as the direction of the drag current in terms of microscopic system parame…
We examine cross-correlations (CCs) in the tunneling currents through two parallel interacting quantum dots coupled to four independent ferromagnetic electrodes. We find that when either one of the two circuits is in the parallel configuration with sufficiently strong polarization strength, a new mechanism of dynamical spin blockade, i.e., a spin-dependent bunching of tunneling events, governs transport through the system together with the inter-dot Coulomb interaction, leading to a sign-reversal of the zero-frequency current CC in the dynamical channel blockade regime, and to enhancement of p…
We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capaci…
We consider a system of two purely capacitively-coupled singlet-triplet qubits, and numerically simulate the energy structure of four electrons in two double quantum dots with a large potential barrier between them. We calculate the interqubit coupling strength using an extended Hund-Mulliken approach which includes excited orbitals in addition to the lowest energy orbital for each quantum dot. We show the coupling strength as a function of the qubit separation, as well as plotting it against the detunings of the two double quantum dots, and show that the general qualitative features of our re…
We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined states : insulating, normal conduction and resonant conduction.
We investigate two equivalent, capacitively coupled semiconducting quantum dots, each coupled to its own lead, in a regime where there are two electrons on the double dot. With increasing interdot coupling a rich range of behavior is uncovered: first a crossover from spin- to charge-Kondo physics, via an intermediate SU(4) state with entangled spin and charge degrees of freedom; followed by a quantum phase transition of Kosterlitz-Thouless type to a non-Fermi liquid `charge-ordered' phase with finite residual entropy and anomalous transport properties. Physical arguments and numerical renormal…
We report measurements of the cross-correlation between current noise fluctuations in two capacitively coupled quantum dots in the Coulomb blockade regime. The sign of the cross-spectral density is found to be tunable by gate voltage and source-drain bias. Good agreement is found with a model of sequential tunneling through the dots in the presence of inter-dot capacitive coupling.
A system consisting of two independently contacted quantum dots with strong electrostatic interaction shows interdot Coulomb blockade when the dots are weakly tunnel coupled to their leads. It is studied experimentally how the blockade can be overcome by correlated tunneling when tunnel coupling to the leads increases. The experimental results are compared with numerical renormalization group calculations using predefined (measured) parameters. Our results indicate Kondo correlations due to the electrostatic interaction in this double quantum dot system.
We consider the capacitive interaction between a charge qubit and a sensor quantum dot(SQD) perturbatively to the second order of their coupling constant at zero temperature by utilizing the method of non-equilibrium Green's functions together with infinite-U Lacroix approximation and employing Majorana fermion representation for qubit isospin operators. The effect of back-actions on dynamics of the system is taken into account by calculating the self-energies and the Green's functions in a self-consistent manner. To demonstrate the applicability of the method, we investigate relevant physical…
We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and poor man's scaling techniques, the low-energy Kondo scale of the model is shown to vary significantly with the gate voltage, being exponentially small when spin and pseudospin degrees of freedom dominate; but increasing to much larger values when the gate voltage is tuned close to the edges of the Coulomb blockade staircase where low-energy charge-fluctuations…
We investigate a method for entangling two singlet-triplet qubits in adjacent double quantum dots via capacitive interactions. In contrast to prior work, here we focus on a regime with strong interactions between the qubits. The interplay of the interaction energy and simultaneous large detunings for both double dots gives rise to the double charge resonant regime, in which the unpolarized (1111) and fully polarized (0202) four-electron states in the absence of interqubit tunneling are near degeneracy, while being energetically well-separated from the partially polarized (0211 and 1102) states…
We consider a double dot system of equivalent, capacitively coupled semiconducting quantum dots, each coupled to its own lead, in a regime where there are two electrons on the double dot. Employing the numerical renormalization group, we focus here on single-particle dynamics and the zero-bias conductance, considering in particular the rich range of behaviour arising as the interdot coupling is progressively increased through the strong coupling (SC) phase, from the spin-Kondo regime, across the SU(4) point to the charge-Kondo regime; and then towards and through the quantum phase transition t…
Strong correlation effects in a capacitively coupled double quantum-dot setup were previously shown to provide the possibility of both entangling spin-charge degrees of freedom and realizing efficient spin-filtering operations by static gate-voltage manipulations. Motivated by the use of such a device for quantum computing, we study the influence of electromagnetic noise on a general spin-orbital Kondo model, and investigate the conditions for observing coherent, unitary transport, crucial to warrant efficient spin manipulations. We find a rich phase diagram, where low-energy properties sensit…
We investigate magneto-transport through a 1.6 μm wide quantum dot (QD) with adjacent charge detector, for different integer filling factors in the QD and constrictions. When this system is operated as a Fabry-Pérot interferometer, transport is governed by a Coulomb blockade mechanism. In the tunneling regime, we can directly measure the charge stability diagram of two capacitively and tunnel coupled Landau levels. This situation has been investigated in direct transport, as well as in single electron counting. The edge states within the dot are non-cyclically depopulated, which can be explain…
We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of non-coherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the elec…
We study the heat current through two capacitively coupled quantum dots coupled in series with two conducting leads at different temperatures $T_L$ and $T_R$ in the spinless case (valid for a high applied magnetic field). Our results are also valid for the heat current through a single quantum dot with strongly ferromagnetic leads pointing in opposite directions (so that the electrons with given spin at the dot can jump only to one lead) or through a quantum dot with two degenerate levels with destructive quantum interference and high magnetic field. Although the charge current is always zero,…
We present microwave frequency measurements of the dynamic admittance of a quantum dot tunnel coupled to a two-dimensional electron gas. The measurements are made via a high-quality 6.75 GHz on-chip resonator capacitively coupled to the dot. The resonator frequency is found to shift both down and up close to conductance resonance of the dot corresponding to a change of sign of the reactance of the system from capacitive to inductive. The observations are consistent with a scattering matrix model. The sign of the reactance depends on the detuning of the dot from conductance resonance and on the…
We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage. Using a purely capacitive model, we extract all relevant energy scales of the double dot system.
We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots.
Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undop…
We study heat current and the full statistics of heat fluctuations in a capacitively-coupled double quantum dot system. This work is motivated by recent theoretical studies and experimental works on heat currents in quantum dot circuits. As expected intuitively, within the (static) mean-field approximation, the system at steady-state decouples into two single-dot equilibrium systems with renormalized dot energies, leading to zero average heat flux and fluctuations. This reveals that dynamic correlations induced between electrons on the dots is solely responsible for the heat transport between …
Among newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To probe the sources of scattering, we use a cooled scanning probe microscope (SPM) to image the flow of electrons in a MoS2 Hall bar sample at 4.2 K. Capacitive coupling to the SPM tip changes the electron density below and scatters electrons flowing nearby; an image of flow can be obtained by measuring the change in resistance between two contacts as the tip …
The search of a sweet spot, locus in qubit parameters where quantum control is first-order insensitive to noises, is key to achieve high-fidelity quantum gates. Efforts to search for such a sweet spot in conventional double-quantum-dot singlet-triplet qubits where each dot hosts one electron ("two-electron singlet-triplet qubit"), especially for two-qubit operations, have been unsuccessful. Here we consider singlet-triplet qubits allowing each dot to host more than one electron, with a total of four electrons in the double quantum dots ("four-electron singlet-triplet qubit"). We theoretically …
We present a study of the correlated transport regimes of a double quantum impurity system with mutual capacitive interactions. Such system can be implemented by a double quantum dot arrangement or by a quantum dot and nearby quantum point contact, with independently connected sets of metallic terminals. Many--body spin correlations arising within each dot--lead subsystem give rise to the Kondo effect under appropriate conditions. The otherwise independent Kondo ground states may be modified by the capacitive coupling, decisively modifying the ground state of the double quantum impurity system…
The numerical renormalization group is employed to study a double quantum (DQD) dot system consisting of two equivalent single-level dots, each coupled to its own lead and with a mutual capacitive coupling embodied in an interdot interaction U', in addition to the intradot Coulomb interaction U. We focus on the regime with two electrons on the DQD, and the evolution of the system on increasing U'/U. The spin-Kondo effect arising for U'=0 (SU(2) x SU(2)) is found to persist robustly with increasing U'/U, before a rapid but continuous crossover to (a) the SU(4) point U'=U where charge and spin d…
Recent work on Ising-coupled double-quantum-dot spin qubits in GaAs with voltage-controlled exchange interaction has shown improved two-qubit gate fidelities from the application of oscillating exchange along with a strong magnetic field gradient between adjacent dots. By examining how noise propagates in the time-evolution operator of the system, we find an optimal set of parameters that provide passive stroboscopic circumvention of errors in two-qubit gates to first order. We predict over 99% two-qubit gate fidelities in the presence of quasistatic and 1/$\textit{f}$ noise, which is an order…
We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which allows us to determine the time-averaged charge on the dot in the non-blockaded regime and to estimate the coupling of the dot to the leads.
We consider the dephasing of an one-electron state in a quantum dot due to charge fluctuations in a biased quantum point contact coupled to the dot capacitively. The contribution to the dephasing rate due to the bias depends on temperature and bias in the same way as shot-noise in the point contact at zero frequency, but do not follow the |t|^2(1-|t|^2) suppression.
Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $π$-r…
We demonstrate an information transfer mechanism between two dissimilar remote InAs/GaAs quantum dots weakly coupled to a common photonic crystal microcavity. Bichromatic excitation in the s-state of one of the dots leads to the formation of dressed states due to the coherent coupling to the laser field, in resonance with the quantum dot. Information on the resulting dressed structure is read out through the photo-luminescence spectrum of the other quantum dot, as well as the cavity mode. The effect is also observed upon exchange of the excitation and detection quantum dots. This quantum dot i…
A Berry phase can be added to the wavefunction of an isolated quantum dot by adiabatically modulating a nonuniform electric field along a time-cycle. The dot is tuned close to a three-level degeneracy, which provides a wide range of possibilities of control. We propose to detect the accumulated phase by capacitively coupling the dot to a double-path inteferometer. The effective Hamiltonian for the phase-sensitive coupling is discussed in detail.
Electron capture and emission by Coulomb scattering in self-assembled quantum dot (QD) devices is studied theoretically. While the dependence of the Coulomb scattering (Auger) rates on the local wetting layer electron density has been a topic of intense research, we put special interest on the remote scattering between QD electrons and continuum electrons originating from a quantum well, doped bulk layers or metal contacts. Numerical effort is made to include all microscopic transitions between the Fermi distributed continuum states. The remote Coulomb scattering is investigated as a function …
We investigate capacitively coupled two-qubit quantum gates based on quantum dots. For exchange-only coded qubits electron spin $S$ and its projection $S_z$ are exact quantum numbers. Capacitive coupling between qubits, as distinct from interqubit exchange, preserves these quantum numbers. We prove, both analytically and numerically, that conservation of the spins of individual qubits has dramatic effect on performance of two-qubit gates. By varying the level splittings of individual qubits, $J_a$ and $J_b$, and the interqubit coupling time $t$, we can find an infinite number of triples $(J_a,…
Strong electron correlations are discussed for the three capacitively coupled quantum dots, each of which is connected to a separate pair of electrodes. The finite-$U$ mean field slave boson approach is used. The analysis is carried out for both repulsive and attractive intra- and inter-dot interactions. Depending on the ratio and the sign of interaction parameters and occupation, either charge ordered states or different spin, spin-charge and charge Kondo resonances arise.
Recent achievements in the field of gate defined semiconductor quantum dots reinforce the concept of a spin-based quantum computer consisting of nodes of locally connected qubits which communicate with each other via superconducting circuit resonator photons. In this work we theoretically demonstrate a versatile set of quantum gates between adjacent spin qubits defined in semiconductor quantum dots situated within the same node of such a spin-based quantum computer. The electric dipole acquired by the spin of an electron that moves across a double quantum dot potential in a magnetic field grad…
We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel barriers connecting the system to source and drain leads.
We have investigated coherent time evolution of pseudo-molecular states of an isolated (leadless) silicon double quantum-dot, where operations are carried out via capacitively-coupled elements. Manipulation is performed by short pulses applied to a nearby gate, and measurement is performed by a single-electron transistor. The electrical isolation of this qubit results in a significantly longer coherence time than previous reports for semiconductor charge qubits realized in artificial molecules.
We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate.
The ability to tune qubits to flat points in their energy dispersions ("sweet spots") is an important tool for mitigating the effects of charge noise and dephasing in solid-state devices. However, the number of derivatives that must be simultaneously set to zero grows exponentially with the number of coupled qubits, making the task untenable for as few as two qubits. This is a particular problem for adiabatic gates, due to their slower speeds. Here, we propose an adiabatic two-qubit gate for quantum dot hybrid qubits, based on the tunable, electrostatic coupling between distinct charge configu…
This article is concerned with statistics of addition spectra for systems of identical charged particles. A classical model is suggested in order to study fluctuations of Coulomb blockade peak spacings in large two-dimensional semiconductor quantum dots. It is based on the electrostatics of several electron islands among which there are random inductive and capacitive couplings. Each island can accommodate electrons on quantum orbitals whose energy depend also on an external magnetic field. | In contrast with a single island quantum dot where the spacing distribution between conductance peaks …
We report on two-photon interference (TPI) experiments using remote deterministic single-photon sources. Employing 3D in-situ electron-beam lithography, we fabricate quantum-light sources at specific target wavelengths by integrating pre-selected semiconductor quantum dots within monolithic microlenses. The individual single-photon sources show TPI visibilities of 49% and 22%, respectively, under pulsed p-shell excitation at 80 MHz. For the mutual TPI of the remote sources, we observe an uncorrected visibility of 29%, in quantitative agreement with the pure dephasing of the individual sources.…
We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off the dot can be observed in real time in the current signal from the quantum point contact. From these time-dependent traces, the quantum mechanical coupling between dot and reservoir can be extracted quantitatively. A similar analysis allows the determination of the occupation probability of the dot states.
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide single-electron charge sensing on microsecond timescales. Simultaneously, rf reflectometry allows fast measurement of transport through the nanotube dot. Charge stability diagrams for the nanotube dot in the Coulomb blockade regime show extended Coulomb diamonds into the high-bias regime, as well as even-odd filling effects, revealed in charge sensing data.
A subminiature mesoscopic cell, consisting of an asymmetric double quantum dot capacitively coupled to a nearby mesoscopic circuit, is proposed, which can transform disordered noise energy to ordered electric energy. Two schemes, the noise originating from the nearby mesoscopic circuit and from the electromagnetic wave disturbance in external environment, are investigated. We found that the proposed cell can manifest as a good constant current source and the output current may not reach its largest value even if the circuit is shorted.
