Artem R. Oganov, Jiuhua Chen, Carlo Gatti, Yanzhang Ma, Yanming Ma, Colin W. Glass, Zhenxian Liu, Tony Yu, Oleksandr O. Kurakevych, Vladimir L. Solozhenko
The comment of Dubrovinskaia et al. is scientifically flawed. The high-pressure form of boron, discovered by Oganov et al., is indeed new and its bonding has a significant ionic character, as demonstrated in Ref. 1.
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Boron is an element of fascinating chemical complexity. Controversies have shrouded this element since its discovery was announced in 1808: the new 'element' turned out to be a compound containing less than 60-70 percent of boron, and it was not until 1909 that 99-percent pure boron was obtained. And although we now know of at least 16 polymorphs, the stable phase of boron is not yet experimentally established even at ambient conditions. Boron's complexities arise from frustration: situated between metals and insulators in the periodic table, boron has only three valence electrons, which would…
Defect Engineered Hexagonal-Boron Nitride Enables Ionic Conduction for Lithium Metal Batteries
针对锂金属负极枝晶与界面不稳定问题，提出通过氩离子辐照对六方氮化硼界面层进行缺陷工程改造，在保持电绝缘的同时提升离子传导，实现无枝晶长循环并大幅缓解多硫化物穿梭效应。
Charge-transfer-mediated boron magneto-ionics: Towards voltage-driven multi-ion transport
本研究在 FeBO 体系中证明氧含量增加可通过电荷转移激活 B 与 Fe 的反向协同输运，实现电压驱动的多离子磁离子效应。
A scientific discussion was recently raised on the interpretation of chemical bonding in the high pressure structure of Boron. Some remarks are given in this short commentary
Different phases of solid boron under high pressure are studied by first principles calculations. The $α$-B$_{12}$ structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero around 160 GPa, where the material transforms to a weak metal. The metallicity, as measured by the density of states at the Fermi level, enhances as the pressure is further increased. The pressure-induced metallization can be attributed to the enhanced boron-boron interactions that cause bands overlap. These results are consist with the recently observed metallization…
The electrical conductivity of melts of boron and its carbide (B4C), nitride (BN), and phosphide (BP) has been studied at pressures to 7.7 GPa and temperatures to 3500 K. It has been shown that these melts are good conductors with specific electrical conductivity values comparable with that of iron melt at ambient pressure.
The pressure dependence of melting temperatures for boron carbide and B4C-carbon eutectic has been studied up to 8 GPa, and it was found that in both cases the melting curves exhibit negative slope (-13\pm6 K/GPa), that is indicative of higher density of the melt as compared to the solid phase.
This work demonstrates the effectiveness of the high-pressure method for the production of graphite and diamond with a high degree of boron doping using adamantanecarborane mixture as a precursor. At 8 GPa and $1700 ^{o}C$, graphite is obtained from adamantane $C_{10}H_{16}$, whereas microcrystals of boron-doped diamond (2÷2.5 at.% of boron) are synthesized from a mixture of adamantane and ortho-carborane $C_{2}B_{10}H_{12}$ (atomic ratio B:C = 5:95). This result shows convincingly the catalytical activity of boron in the synthesis of diamond under high pressure. At pressures lower than 7 GPa,…
Two boron-rich chalcogenides B12S and B12Se isostructural to α-rhombohedral boron were synthesized by chemical reaction of the elements at high-pressure - high-temperature conditions. The crystal structures and stoichiometries of both compounds were confirmed by Rietveld refinement and elemental analysis. The experimental Raman spectra of B12S and B12Se were investigated for the first time. All observed Raman bands have been attributed to the theoretically calculated phonon modes, and the mode assignment has been performed.
Melting of rhombohedral boron subnitride B13N2 has been studied in situ at pressures to 8 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa B13N2 melts incongruently, and the melting curve exhibits positive slope of 31(3) K/GPa that points to a lower density of the melt as compared to the solid phase.
Melting of cubic boron phosphide, BP has been studied at pressures to 9 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa BP melts congruently, and the melting curve exhibits negative slope -60(7) K/GPa, which is indicative of a higher density of the melt as compared to the solid phase.
Melting of boron subphosphide (B12P2) to 26 GPa has been studied by in situ synchrotron X-ray powder diffraction in a laser-heated diamond anvil cell, and by quenching and electrical resistance measurements in a toroid-type high-pressure apparatus. B12P2 melts congruently, and the melting curve has a positive slope of 23(6) K/GPa. No solid-state phase transition was observed up to the melting in the whole pressure range under study.
Through the use of perturbation theory, in this work we develop a method which allows for a substantial reduction in the size of the plane-wave basis used in density-functional calculations. This method may be used for both pseudopotentials and all-electron calculations and is particularly beneficial in the latter case. In all cases, the approach has the advantage of allowing accurate predictions of transferability errors for any environment. Finally, this method can be easily implemented into conjugate gradient techniques and it is therefore computationally efficient. In this work, we apply t…
The formation of boron carbide under high pressures and from elemental reactants has been studied and optimum parameters have been determined by varying the (P, T, reactants) conditions. To this end, stoichiometric mixtures of commercial beta rhombohedral boron and amorphous glassy carbon have been subjected to temperatures ranging from 1473 K to 2473 K at pressures of 2 GPa, 5 GPa and 13 GPa. Similar syntheses have been repeated for mixtures of beta boron and graphite, and amorphous boron and amorphous carbon at 2 GPa and 5 GPa. The carbon concentration of boron carbide is shown to be affecte…
We argue that the extremely low vapor pressures of room temperature ionic liquids near their triple points are due to the combination of strong ionic characters and of low melting temperatures.
In this work we show, by means of a density functional theory formalism, that the simple physical contact between hydrogen terminated boron nitride surfaces gives rise to a metallic interface with free carries of opposite sign at each surface. A band gap can be induced by applying uniaxial pressure. The size of the band gap changes continuously from zero up to 4.4 eV with increasing pressure, which is understood in terms of the interaction between surface states. Due to the high thermal conductivity of cubic boron nitride and the coupling between band gap and applied pressure, such tunable ban…
The role of carbon in the formation of alpha boron at high pressure and high temperature (HPHT) has been investigated by combining HPHT experiments and density functional theory (DFT) calculations. Starting from beta rhombohedral or amorphous boron and amorphous carbon at 5 GPa, the alpha boron phase has been repeatedly observed between 1473 K and 2273 K, at temperatures that are much higher than those reported in the phase diagram of boron. The DFT investigation of the effect of carbon insertion into the alpha rhombohedral boron atomic structure on the formation enthalpy, volume and optical p…
Theoretical predictions of pressure-induced phase transformations often become long-standing enigmas because of limitations of contemporary available experimental possibilities. Hitherto the existence of a non-icosahedral boron allotrope has been one of them. Here we report on the first non-icosahedral boron allotrope, which we denoted as ζ-B, with the orthorhombic α-Ga-type structure (space group Cmce) synthesized in a diamond anvil cell at extreme high-pressure high-temperature conditions (115 GPa and 2100 K). The structure of ζ-B was solved using single-crystal synchrotron X-ray diffraction…
Quasi-hydrostatic compression of rhombohedral boron monosulfide (r-BS) has been studied up to 50 GPa at room temperature using diamond-anvil cells and angle-dispersive synchrotron X-ray diffraction. A fit of the experimental P-V data to the Vinet equation of state yields bulk modulus of 42.2(1.4) GPa and its first pressure derivative of 7.6(2) that are in excellent agreement with our ab initio calculations. Formation of a new high-pressure phase of boron monosulfide (hp-BS) has been observed above 35 GPa. According to ab initio evolutionary crystal structure predictions combined with Rietveld …
High-pressure phase of boron oxide, orthorhombic \b{eta}-B2O3, has been studied in situ by synchrotron X-ray diffraction to 22 GPa and Raman scattering to 46 GPa at room temperature. The bulk modulus of \b{eta}-B2O3 has been found to be 169(3) GPa that is in good agreement with our ab initio calculations. Raman and IR spectra of \b{eta}-B2O3 have been measured at ambient pressure, all experimentally observed bands have been attributed to the theoretically calculated ones, and the mode assignment has been performed. Based on the data on Raman shift as a function of pressure, combined with equat…
Compressibility of boron subarsenide B12As2 has been studied by synchrotron X-ray diffraction up to 47 GPa at room temperature in a diamond anvil cell using Ne pressure transmitting medium. A fit of experimental p-V data by Vinet equation of state yielded the bulk modulus of 150(4) GPa and its first pressure derivative of 6.4(3). No pressure-induced phase transitions have been observed.
The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than the bandgap. This behavior at variance from the shift of the bandgap is typical of deep traps. Interestingly, hydrostatic pressure reveals the existence of levels that vary differently under pressure (smaller increase of the emission wavelength compared to the rest of the levels in this energy region or even decrease of it) with pressure. This discovery enric…
The phase relations in boron have been investigated at high pressure and high temperature using a multianvil apparatus, and the quenched sample has been analyzed by x-ray diffraction, Raman spectra and transmission electron microscopy. We demonstrate that γ-B28 can be synthesized over a wide P-T range, and T-B50 is obtained at higher temperatures and similar pressures. The phase boundary of the β-B106, γ-B28 and T-B50 is determined at pressures between 7 and 18 GPa and the temperatures of 500-2200 °C. The results suggest that T-B50 might be an intermediate phase-metastable, formed for kinetic …
Pressure Dependence of Electronic, Vibrational and Optical Properties of wurtzite-Boron Nitride
本文通过第一性原理研究了纤锌矿型氮化硼在宽压力范围内的电子、振动和光学性质，为其在光电及恶劣环境中的介电应用提供理论依据。
High pressure Raman experiments on Boron Nitride multi-walled nanotubes show that the intensity of the vibrational mode at ~ 1367 cm-1 vanishes at ~ 12 GPa and it does not recover under decompression. In comparison, the high pressure Raman experiments on hexagonal Boron Nitride show a clear signature of a phase transition from hexagonal to wurtzite at ~ 13 GPa which is reversible on decompression. These results are contrasted with the pressure behavior of carbon nanotubes and graphite.
In this paper we have theoretically found the activation energy ($420.38kJ/mol$) for the transformation from hBN to cBN in the microscopic viewpoint. We have introduced an analytical formula representing the dependence of nucleus formation time on the activation energy, synthesis pressure and temperature. We have theoretically determined the boundary line of cBN nucleus formation region in the $P-T$ phase diagram on the basis of the diffusion mechanism of cBN nucleus formation. We have found that the cBN crystal nucleus formation time is less than $300ms$ by comparing of the theory and experim…
Mechanical properties of cubic boron nitride and diamond at dynamical pressure and temperature
本研究利用从头算分子动力学比较c-BN与金刚石在动态温压条件下的力学性能，发现c-BN在约220 GPa发生脆韧转变且硬度表现接近金刚石。
In this work, sintered polycrystalline cubic boron nitride (cBN) compacts, with titanium carbonitride (TiC0.7N0.3) and titanium nitride (TiN), respectively, as binders, were prepared at temperature of 1450°C and pressure of 5.5 GPa during 3 minutes, and the influence of binders on the plastic deformation of cBN powder due to the sintering process was experimentally investigated by X-ray diffraction (XRD) analysis. It was shown that the sintered compact with titanium carbonitride as a binder displays more intense plastic deformation of cBN grains than that with titanium nitride binder. This res…
This Comment points out a number of errors in the recent paper by Zarechnaya, Dubrovinskaia, Dubrovinsky, et al. (Phys. Rev. Lett. 102, 185501 (2009)). Results and conclusions presented by Zarechnaya et al. (2009) are either incorrect or have been presented before.
Two novel of boron-rich selenides, orthorhombic B$_6$Se and rhombohedral B$_{12}$Se, have been recently synthesized at high pressure - high temperature conditions. Room-temperature compressibilities of these phases were studied in a diamond anvil cell using synchrotron powder X-ray diffraction. A fit of experimental p-V data by third-order Birch-Murnaghan equation of state yielded the bulk moduli of 155(2) GPa for B$_{12}$Se and 144(3) GPa for B$_6$Se. No pressure-induced phase transitions have been observed in the studied pressure range, i.e., up to 35 GPa.
Cubic boron phosphide BP has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B0 = 174(2) GPa has been established, which is in excellent agreement with our ab initio calculations. The data on Raman shift as a function of pressure, combined with equation-of-state data, allowed us to estimate the Grüneisen parameters of the TO and LO modes of zinc-blende structure, γGTO = 1.16 and γGLO = 1.04, just like in the case of other AIIIBV diamond-like phases, for which γGTO > γGLO = 1. We also established that the pressure…
The complex crystal chemistry of elemental boron has led to numerous proposed structures with distinctive motifs as well as contradictory findings. Herein, evolutionary structure searches performed at 100 GPa have uncovered a series of potential new metastable phases of boron, and bonding analyses were carried out to elucidate their electronic structure. These polymorphs, dynamically stable at 100 GPa, were grouped into two families. The first was derived from the thermodynamic minimum at these conditions, $α$-Ga, whereas channels comprised the second. Two additional intergrowth structures wer…
We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane ($H_3N-BH_3$) as a function of $Ar/H_2$ background pressure ($P_{TOT}$). Films grown at $P_{TOT}$ less than 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger $P_{TOT}$, with constant precursor flow, the growth rate increases, but the resulting h-BN is more amorphous, disordered, and $sp^3$ bonded. We attribute these changes in h-BN grown at high pressure to incomplete thermolysis of the …
We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma anisotropically etches graphene in the vertical direction, which exposes graphene edges at h-BN sidewalls. Despite the O2 plasma bombardment, the lower h-BN layer functions as an insulating layer. Thus, th…
The oxygen self-diffusion coefficient in UO${_2}$ has been recently studied [Cooper et al. Solid State Ionics 282 (2015) 26-30] over a range of pressures (0-10GPa) and temperatures (300-1900K) by combining molecular dynamics calculations with a thermodynamical model, the cBΩ model. A significant reduction in oxygen self-diffusion as a function of increasing hydrostatic pressure, and the associated increase in activation energy was identified. Here, we extend this study and find that the compressibility of the corresponding activation volume exceeds significantly the compressibility of the bulk…
Measurements of the hardness of a new high-pressure boron phase, orthorhombic γ-B28, are reported. According to the data obtained, γ-B28 has the highest hardness (~50 GPa) of all known crystalline modifications of boron.
Oganov et al report a discovery of an ionic high-pressure /hitherto unknown phase of boron/. We show that this phase has been known since 1965, and it is a covalent material.
We report a combined experimental and theoretical study of boron carbide under stress/deformation. A special rotating anvil press, the rotating tomography Paris Edinburgh cell (RotoPEC), has been used to apply torsional deformation to boron carbide under a pressure of 5~GPa at ambient temperature. Subsequent damages and point defects have been analysed at ambient pressure by energy dispersive X-ray microdiffraction at the synchrotron and by Raman spectroscopy, combined with calculations based on the density functional theory (DFT). We show that apart from the signals due to B$_4$C, new peaks a…
Compressibility of boron subphosphide B12P2 has been studied under quasi-hydrostatic conditions up to 26 GPa and 2600 K using laser-heated diamond anvil cell and angle-dispersive synchrotron X-ray diffraction. 300-K data fit yields the values of bulk modulus B0 = 192(11) GPa and its first pressure derivative B0' = 5.5(12). At ambient pressure the thermal expansion is quasi-linear up to 1300 K with average volume expansion coefficient α = 17.4(1) 10-6 K-1. The whole set of experimental p-V-T data is well described by the Anderson-Grüneisen model with δT = 6.
New boron subnitride B50N2 has been synthesized by crystallization from the B-BN melt at 5 GPa, and its structure has been refined using Rietveld analysis. B50N2 crystallizes in the tetragonal space group P-4n2 with unit cell parameters a = 8.8181(2) A and c = 5.0427(10) A. Quasi-hydrostatic compression of two boron subnitrides, B50N2 and B13N2, has been studied to 30 GPa at room temperature in a diamond-anvil cell using synchrotron X-ray diffraction. No pressure-induced phase transitions have been observed. A fit of experimental p-V data to the Murnaghan equation of state yielded B50N2 and B1…
The 300 K equation of state of cubic (zinc-blende) boron phosphide BP has been studied by in situ single-crystal X-ray diffraction with synchrotron radiation up to 55 GPa. The measurements have been performed under quasi-hydrostatic conditions using a Ne pressure medium in a diamond anvil cell. A fit of the experimental p-V data to the Vinet equation of state yields the bulk modulus B0 of 179(1) GPa with its pressure derivative of 3.3(1). These values are in a good agreement with previous elastic measurements, as well as with semiempirical estimations.
Magnetic measurements under high pressure with a quantum sensor in Hexagonal Boron Nitride
本研究提出利用六方氮化硼中的硼空位自旋缺陷进行高压磁性测量，发现其零场分裂压力响应约为NV中心的3倍，并成功观测到Fe3GeTe2的磁转变，工作压力上限约11 GPa，为二维量子传感在高压下的应用奠定基础。
We report a detailed spectroscopic study of the pressure induced neutral-ionic phase transition (NIT) of the mixed-stack charge-transfer (CT) crystal tetrathiafulvalene-chloranil (TTF-CA). We show that the pressure induced phase transition is still first-order and involves the presence of an intermediate disordered phase, defined by the coexistence of two species of different ionicity. Further application of pressure gradually converts this phase into an homogeneous ferroelectric phase with a single ionicity. In addition, we detect strong pretransitional phenomena which anticipate the intermed…
Here we report the systematic study of solid-state phase transformations between boron polymorphs: α-B12, β-B106, γ-B28, T-B52 and amorphous boron (am-B). It is evident that the Ostwald rule of stages plays an important role during phase transformations not only of amorphous boron, but also of crystalline forms. We have observed the crystallization of tetragonal boron T-B52 from amorphous phase of high purity (99.99%), which, however, cannot be easily distinguished from B50C2 boron compound. Many factors influence the transformations of amorphous phase, and it is possible to observe not only w…
Application of about 0.8 GPa pressure is sufficient to induce the neutral-ionic transition in the mixed stack charge-transfer crystal 2-chloro-5-methyl-$p$-phenylenediamine--2,5-dimethyl-dicyanoquinonediimine ({\CD}). The ionicity increases continuously from $\sim$ 0.35 at ambient conditions to $\sim$ 0.65 when the pressure is raised up to 2 GPa. Moreover, stack dimerization begins well before the crossing of the neutral-ionic interface. The evolution of the transition is similar to what observed in the temperature induced phase change in the same compound. (cond-mat/0101179) A distinguishing …
Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence (PL) of the $V_B^-$. Specifically, we find that the frequency shift in optically detected magnetic resonance …
Our findings show that the hardness of glass-like B2O3 is of about 1.5 GPa, while the hardness of the high-pressure phase is higher by a factor of 10 (16(5) GPa) and comparable with the hardness (16 GPa) of the WC-10% Co hard alloy.
Micron-thick boron films have been deposited by Pulsed Laser Deposition in vacuum on several substrates at room temperature. The use of high energy pulses (>700 mJ) results in the deposition of smooth coatings with low oxygen uptake even at base pressures of 10$^{-4}$ - 10$^{-3}$ Pa. A detailed structural analysis, by X-Ray Diffraction and Raman, allowed to assess the amorphous nature of the deposited films as well as to determine the base pressure that prevents boron oxide formation. In addition the crystallization dynamics has been characterized showing that film crystallinity already improv…
Combining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighboring layers, most easily controlled through their interlayer separation, can have significant influence on the electronic properties of these composite materials. Here, we demonstrate unprecedented control over interlayer interactions by locally modifying the interlayer separation between graphene and boron nitride, which we achieve by applying pressure with a scanning tunneling microscopy tip. For the spec…
We determine the fundamental electronic and optical properties of the high-thermal-conductivity III-V semiconductor boron arsenide (BAs) using density functional and many body perturbation theory including quasiparticle and spin-orbit coupling corrections. We find that the fundamental band gap is indirect with a value of 2.049 eV, while the minimum direct gap has a value of 4.135 eV. We calculate the carrier effective masses and report smaller values for the holes than the electrons, indicating higher hole mobility and easier p-type doping. The small difference between the static and high freq…
Raman spectra of rhombohedral boron monosulfide (r-BS) were measured under pressures up to 34 GPa at room temperature. No pressure-induced structural phase transition was observed, while strong pressure shift of Raman bands towards higher wavenumbers has been revealed. IR spectroscopy as a complementary technique has been used in order to completely describe the phonon modes of r-BS. All experimentally observed bands have been compared with theoretically calculated ones and modes assignment has been performed. r-BS enriched by 10B isotope was synthesized, and the effect of boron isotopic subst…
γ-B28 is a recently established high-pressure phase of boron. Its structure consists of icosahedral B12 clusters and B2 dumbbells in a NaCl-type arrangement (B2)δ+(B12)δ- and displays a significant charge transfer δ~0.5- 0.6. The discovery of this phase proved essential for the understanding and construction of the phase diagram of boron. γ-B28 was first experimentally obtained as a pure boron allotrope in early 2004 and its structure was discovered in 2006. This paper reviews recent results and in particular deals with the contentious issues related to the equation of state, hardness, putativ…
Density Functional Theory calculations using the quasi-harmonic approximation have been used to calculate the solid Hugoniot of two polytypes of boron carbide up to 100 GPa. Under the assumption that segregation into the elemental phases occurs around the pressure that the B11Cp(CBC) polytype becomes thermodynamically unstable with respect to boron and carbon, two discontinuities in the Hugoniot, one at 50 GPa and one at 90-100 GPa, are predicted. The former is a result of phase segregation, and the latter a phase transition within boron. First principles molecular dynamics (FPMD) simulations …
We report experimental and theoretical evidence that solid molecular ammonia becomes unstable at room temperature and high pressures and transforms into an ionic crystalline form. This material has been characterised in both hydrogenated NH3 and deuterated ND3 ammonia samples up to about 180 and 200 GPa, respectively, by infrared absorption, Raman spectroscopy and x-ray diffraction. The presence of a new, strong IR absorption band centered at 2500 cm-1 in NH3 (1900 cm-1 in ND3) signals the ionization of ammonia molecules into NH2- and NH4+ ions, in line with previous theoretical predictions. W…
Anomalous Pressure-Enhanced Polarization in Sliding Ferroelectrics
研究发现流体静压力可增强滑动铁电体（平行堆叠双层氮化硼）的极化，而非抑制，极化近似线性增加80%至1.66 GPa，为超薄滑动电子存储器提供调控手段。
We report on picosecond UV-laser processing of hexagonal boron nitride (hBN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are irradiated by 5 ps or 0.45 ps laser pulses in nitrogen gas environment, multiple nucleation of a new crystalline product - BN nanorods - takes place. This process is triggered on structural defects, which number density strongly decreases upon recrystallization. Non-linear photon absorption by adsorbed nitrogen molecules is suggested to mediate the nucleation-grow…
Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, a…
Melting of orthorhombic boron silicide B6Si has been studied at pressures up to 8 GPa using in situ electrical resistivity measurements and quenching. It has been found that in the 2.6-7.7 GPa range B6Si melts congruently, and the melting curve exhibits negative slope of -31(2) K/GPa that points to a higher density of the melt as compared to the solid phase. At very high temperatures B6Si melt appears to be unstable and undergoes disproportionation into silicon and boron-rich silicides. The onset temperature of disproportionation strongly depends on pressure, and the corresponding low-temperat…
Boron-assisted stabilization of low-resistivity mixed-valence Cu-O thin films prepared by reactive magnetron sputtering
本研究通过硼掺杂和调控氧分压，实现了Cu-O薄膜从高阻到低阻混合价态的转变，获得了约0.06 Ω·cm的低电阻率，为光电应用提供了新途径。
Super-hard and superconducting boron clathrates in the prediction of U-B compounds
本研究通过第一性原理计算预测了高压下具有超导性和超硬性的U-B化合物，其中C2/m-B6的硬度达49-53 GPa，C2/m-B12的临界温度为16.12 K。
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