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arXiv 0906.2880physics.atom-phcond-mat.quant-gas
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AlN-based原子芯片的热性能

Thermal properties of AlN-based atom chips

Julien Armijo, Carlos Garrido Alzar, Isabelle Bouchoule

摘要:

研究了在高导热氮化铝(AlN)衬底上直接沉积金微丝的原子芯片的热性能。我们已经测量了几种宽度的电线的加热,并与不同的热耦合到铜安装持有芯片。结果是在良好的协议与理论模型,其中铜安装被视为散热器和导线和基板之间的热界面电阻是消失。我们给出了描述不同的瞬态加热制度和稳态的解析公式。我们确定的标准,以优化芯片的设计,以及最大电流$I_c$,可以馈入的电线。对于用Epotek H77粘合在铜块上的600 μ m厚的$μ$芯片,我们发现对于3 $μ$ m高,200 $μ$ m宽的线,$I_c=16$ A。

英文摘要:

We have studied the thermal properties of atom chips consisting o high thermal conductivity Aluminum Nitride (AlN) substrates on which gold microwires are directly deposited. We have measured the heating of wires of several widths and with different thermal couplings to the copper mount holding the chip. The results are in good agreement with a theoretical model where the copper mount is treated as a heat sink and the thermal interface resistance between the wire and the substrate is vanishing. We give analytical formulas describing the different transient heating regimes and the steady state. We identify criteria to optimize the design of a chip as well as the maximal currents $I_c$ that can be fed in the wires. For a 600 $μ$m thick-chip glued on a copper block with Epotek H77, we find $I_c=16$ A for a 3 $μ$m high, 200 $μ$m wide-wire.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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