原子芯片的扫描磁电阻显微术
Scanning magnetoresistance microscopy of atom chips
摘要：
基于表面的微加工线或图案化磁性膜的几何形状可用于磁性捕获和操纵超冷中性原子或玻色-爱因斯坦凝聚体。我们使用具有高空间分辨率和高场灵敏度的扫描磁阻（MR）显微镜来研究这种原子芯片的磁性。我们表明，MR传感器非常适合观察由导线或磁性材料中的缺陷引起的磁场的微小变化，这些缺陷最终导致超冷原子云的碎裂。测量也提供了一个小的几何调制沿边缘的载流细导线产生的磁场。比较我们的测量与一个完整的数值计算的电流在电线和随后的磁场显示出良好的协议。我们的研究结果突出了使用扫描MR显微镜作为一个方便和强大的技术，精确地表征原子芯片表面附近产生的磁场。
英文摘要：
Surface based geometries of microfabricated wires or patterned magnetic films can be used to magnetically trap and manipulate ultracold neutral atoms or Bose-Einstein condensates. We investigate the magnetic properties of such atom chips using a scanning magnetoresistive (MR) microscope with high spatial resolution and high field sensitivity. We show that MR sensors are ideally suited to observe small variations of the magnetic field caused by imperfections in the wires or magnetic materials which ultimately lead to fragmentation of ultracold atom clouds. Measurements are also provided for the magnetic field produced by a thin current-carrying wire with small geometric modulations along the edge. Comparisons of our measurements with a full numeric calculation of the current flow in the wire and the subsequent magnetic field show excellent agreement. Our results highlight the use of scanning MR microscopy as a convenient and powerful technique for precisely characterizing the magnetic fields produced near the surface of atom chips.
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