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arXiv 0901.3409cond-mat.mes-hallcond-mat.mtrl-sci
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用于太赫兹和红外探测的石墨烯双层场效应光电晶体管

Graphene Bilayer Field-Effect Phototransistor for Terahertz and Infrared Detection

V. Ryzhii, M. Ryzhii

摘要:

提出并分析了一种石墨烯双层光电晶体管(GBL-PT)。所考虑的GBL-PT具有以GBL作为沟道以及背栅和顶栅的场效应晶体管的结构。背栅的正偏置导致在沟道中形成导电源极和漏极部分,而负偏置的顶栅提供由光生空穴的电荷控制的势垒。GBL-PT的工作特性与栅压和势垒区电荷变化时沟道不同区域的电位分布和能隙的变化有关。使用开发的GBL-PT器件模型,光谱特性,暗电流,响应率和探测率作为施加的电压,入射光子的能量,电子和空穴散射的强度,和几何参数的函数进行计算。结果表明,GBL-PT的光谱特性是电压调谐的。在太赫兹和红外探测器中,GBL-PT作为光电探测器的性能明显优于其他光电探测器。

英文摘要:

A graphene bilayer phototransistor (GBL-PT) is proposed and analyzed. The GBL-PT under consideration has the structure of a field-effect transistor with a GBL as the channel and the back and top gates. The positive bias of the back gate results in the formation of conducting source and drain sections in the channel, while the negatively biased top gate provides the potential barrier which is controlled by the charge of the photogenerated holes. The features of the GBL-PT operation are associated with the variations of both the potential distribution and the energy gap in different sections of the channel when the gate voltages and the charge in the barrier section change. Using the developed GBL-PT device model, the spectral characteristics, dark current, responsivity and detectivity are calculated as functions of the applied voltages, energy of incident photons, intensity of electron and hole scattering, and geometrical parameters. It is shown that the GBL-PT spectral characteristics are voltage tuned. The GBL-PT performance as photodetector in the terahertz and infrared photodetectors can markedly exceed the performance of other photodetectors.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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