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arXiv 0812.1444cond-mat.mtrl-scicond-mat.str-el
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LaAlO3/SrTiO3界面的轨道重构和二维电子气

Orbital reconstruction and two-dimensional electron gas at the LaAlO3/SrTiO3 interface

M. Salluzzo, G. Ghiringhelli, J. C. Cezar, N. B. Brookes, V. Bisogni, G. M. De Luca, C. Richter, S. Thiel, J. Mannhart, M. Huijben, A. Brinkman, G. Rijnders

摘要:

传统的二维电子气是通过设计半导体化合物之间的界面来实现的。2004年,Ohtomo和Hwang发现,在由过渡金属氧化物制成的大间隙绝缘体之间的界面处也可以实现电子气[1]。这一发现产生了相当大的努力,以澄清潜在的微观机制。特别令人感兴趣的是LaAlO 3/SrTiO 3系统,因为它具有特别引人注目的特性。发现了高载流子迁移率[1]、电场可调的超导电性[2]和磁效应[3],并指出在LaAlO_3/SrTiO_3 n型界面上电子气的产生是由轨道重构引起的。我们的研究结果是基于广泛的调查的电子性质和轨道结构的接口,使用X射线吸收光谱。特别是,我们发现,Ti 3d状态的简并性被完全去除,并且Ti 3dxy能级成为导电电子的第一个可用状态。

英文摘要:

Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap insulators made of transition metal oxides [1]. This finding has generated considerable efforts to clarify the underlying microscopic mechanism. Of particular interest is the LaAlO3/SrTiO3 system, because it features especially striking properties. High carrier mobility [1], electric field tuneable superconductivity [2] and magnetic effects [3], have been found. Here we show that an orbital reconstruction is underlying the generation of the electron gas at the LaAlO3/SrTiO3 n-type interface. Our results are based on extensive investigations of the electronic properties and of the orbital structure of the interface using X-ray Absorption Spectroscopy. In particular we find that the degeneracy of the Ti 3d states is fully removed, and that the Ti 3dxy levels become the first available states for conducting electrons.

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