\ce{LaVO_3/SrVO_3}异质结中金属/绝缘体界面电子重构的映射
Mapping electronic reconstruction at the metal/insulator interfaces in \ce{LaVO_3/SrVO_3} heterostructures
摘要：
用亚分辨扫描透射电子显微镜和单色电子能量损失谱研究了\ce{(LaVO_3)_6/(SrVO_3)_3}超晶格。的V氧化态映射与原子空间分辨率，使调查电子重建在\ce{LaVO_3} / \ce{SrVO_3}接口。令人惊讶的是，在相邻的化学对称界面发现不对称的电荷分布。提出了局域结构，并用双沟道计算进行了模拟，与实验定性一致。我们证明局部应变不对称性可能是界面电子不对称性的原因。界面处的电子重构比化学组成延伸得更远，从0.5到1.2 nm不等。该距离对应于先前在\ce{(LaVO_3)_m} / \ce{(SrVO_3)_n}金属/绝缘和\ce{(LaAlO_3)_m} / \ce{(SrTiO_3)_n}绝缘/绝缘界面中发现的电荷转移的长度。
英文摘要：
A \ce{(LaVO_3)_6/(SrVO_3)_3} superlattice is studied with a combination of sub-Å resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling to investigate electronic reconstruction at the \ce{LaVO_3}/\ce{SrVO_3} interfaces. Surprisingly, asymmetric charge distribution is found at adjacent chemically symmetric interfaces. The local structure is proposed and simulated with double channeling calculation which agrees qualitatively with our experiment. We demonstrate that local strain asymmetry is the likely cause of the electronic asymmetry of the interfaces. The electronic reconstruction at the interfaces extends much further than the chemical composition, varying from 0.5 to 1.2 nm. This distance corresponds to the length of charge transfer previously found in the \ce{(LaVO_3)_m}/\ce{(SrVO_3)_n} metal/insulating and the \ce{(LaAlO_3)_m}/\ce{(SrTiO_3)_n} insulating/insulating interfaces.
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