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arXiv 0906.3519cond-mat.str-elcond-mat.mtrl-sci
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用X射线吸收谱确定V-氧化物异质结构中的界面重构

Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy

H. Wadati, D. G. Hawthorn, J. Geck, T. Z. Regier, R. I. R. Blyth, T. Higuchi, Y. Hotta, Y. Hikita, H. Y. Hwang, G. A. Sawatzky

摘要:

我们提出了一个X射线吸收研究的V氧化态的依赖关系的厚度的LaVO $_3$(LVO)和覆盖LaAlO $_3$(LAO)层的LVO夹在LAO之间的多层结构。我们发现,作为LAO层厚度的函数的V的化合价的变化可以定性地解释由电子重建接口和化学重建之间的过渡。作为LVO层厚度的函数的变化由于在较厚的LVO层的本体中存在相当大量的V $^{4+}$而变得复杂。

英文摘要:

We present an x-ray absorption study of the dependence of the V oxidation state on the thickness of LaVO$_3$ (LVO) and capping LaAlO$_3$ (LAO) layers in the multilayer structure of LVO sandwiched between LAO. We found that the change of the valence of V as a function of LAO layer thickness can be qualitatively explained by a transition between electronically reconstructed interfaces and a chemical reconstruction. The change as a function of LVO layer thickness is complicated by the presence of a considerable amount of V$^{4+}$ in the bulk of the thicker LVO layers.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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