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arXiv 1909.06152cond-mat.str-elcond-mat.mtrl-sci
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氧化物异质结构中的可调垂直交换偏置

Tunable perpendicular exchange bias in oxide heterostructures

Gideok Kim, Yury Khaydukov, Martin Bluschke, Y. Eren Suyolcu, Georg Christiani, Kwanghyo Son, Christopher Dietl, Thomas Keller, Eugen Weschke, P. A. van Aken, G… 展开作者

Gideok Kim, Yury Khaydukov, Martin Bluschke, Y. Eren Suyolcu, Georg Christiani, Kwanghyo Son, Christopher Dietl, Thomas Keller, Eugen Weschke, P. A. van Aken, Gennady Logvenov, Bernhard Keimer

摘要:

交换偏置效应是磁存储器和自旋电子器件的重要组成部分。尽管最近的研究已经表明,垂直于器件平面的各向异性提供了优异的热噪声稳定性,但是已经证明在薄膜结构中实现垂直交换偏置是非常困难的。在这里,我们证明了一个强大的垂直交换偏置效应的异质结构的准二维倾斜反铁磁体La $_2$ CuO $_4$和铁磁(La,Sr)MnO $_3$的臭氧辅助分子束外延合成。这种效应的大小可以通过铜酸盐层的掺杂水平来控制。因此,层状氧化物的倾斜反铁磁性是磁性器件中单轴各向异性的一个新的和潜在的强大来源。

英文摘要:

The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has proven remarkably difficult to realize perpendicular exchange bias in thin-film structures. Here we demonstrate a strong perpendicular exchange bias effect in heterostructures of the quasi-two-dimensional canted antiferromagnet La$_2$CuO$_4$ and ferromagnetic (La,Sr)MnO$_3$ synthesized by ozone-assisted molecular beam epitaxy. The magnitude of this effect can be controlled via the doping level of the cuprate layers. Canted antiferromagnetism of layered oxides is thus a new and potentially powerful source of uniaxial anisotropy in magnetic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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