Designing spin and orbital sources of Berry curvature at oxide interfaces
Edouard Lesne, Yildiz G. Saǧlam, Raffaele Battilomo, Maria Teresa Mercaldo, Thierry C. van Thiel, Ulderico Filippozzi, Canio Noce, Mario Cuoco, Gary A. Steele, … 展开作者
Edouard Lesne, Yildiz G. Saǧlam, Raffaele Battilomo, Maria Teresa Mercaldo, Thierry C. van Thiel, Ulderico Filippozzi, Canio Noce, Mario Cuoco, Gary A. Steele, Carmine Ortix, Andrea D. Caviglia
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32 pages, 25 figures, accepted in Nature Materials
Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here, we report the discovery of the first material system having both spin and orbital-sourced BC: LaAlO$_3$/SrTiO$_3$ interfaces grown along the [111] direction. We detect independently these two sources and directly probe the BC associated to the spin quantum number through measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material.
Current-induced spin polarization in isotropic k-cubed Rashba model: Theoretical study for p-doped semiconductor heterostructures and perovskite oxides interfaces
Dirac-like fermions anomalous magneto-transport in a spin-polarized oxide two-dimensional electron system
CNR-SPIN（意大利国家研究委员会自旋物理研究所）；Department of Physics, University of Naples Federico II（那不勒斯费德里科二世大学物理系）；Department of Physics, Universitá degli studi di Salerno（萨莱诺大学物理系）；Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 CNRS and Université de Strasbourg（斯特拉斯堡材料物理与化学研究所）
Novel 2D Altermagnetic Vanadium Oxide with a Buckled Lieb Structure
UNAM - National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University（比尔肯特大学纳米技术与材料科学研究所）；Linköping University（林雪平大学）；Uppsala University（乌普萨拉大学）；University of Iowa（爱荷华大学）
基于密度泛函理论第一性原理计算，发现单层V₂O晶体在翘曲Lieb晶格中是一种二维交变磁性材料，具有负泊松比、面外易磁化轴、1.2 eV动量依赖自旋劈裂以及大贝里曲率和约40 (ℏ/e) S cm⁻¹的自旋霍尔电导率。
Probing the quantum metric of 3D topological insulators
University of Geneva（日内瓦大学）；Institute of Materials Science of Barcelona (ICMAB-CSIC)（巴塞罗那材料科学研究所（ICMAB-CSIC））；Dipartimento di Fisica ‘E. R. Caianiello’, Universitá di Salerno（萨莱诺大学物理系‘E. R. Caianiello’）；CNR-SPIN c/o Universita’ di Salerno（意大利国家研究委员会自旋物理中心（依托萨莱诺大学））；CNR-IMM（意大利国家研究委员会微电子与微系统研究所）
