SrRuO $_3$ - SrIrO $_3$双层膜中界面驱动的拓扑霍尔效应
Interface-driven topological Hall effect in SrRuO$_3$-SrIrO$_3$ bilayer
摘要：
电子输运与磁性的耦合近年来引起了人们的关注，例如由于动量空间中的Berry相引起的反常霍尔效应。另一种非传统的霍尔效应--拓扑霍尔效应，起源于实空间的Berry相，最近在磁skyrmions的背景下变得非常重要。在由铁磁SrRuO $_3$和顺磁SrIrO $_3$组成的双层膜中，我们在很宽的温度和磁场范围内观察到了拓扑霍尔效应。拓扑项随SrRuO $_3$厚度的增加而迅速减小，最终在7个SrRuO $_3$晶胞处完全消失.结合模型计算，我们认为这种拓扑霍尔效应是由SrIrO $_3$的反转对称破缺和强自旋轨道耦合引起的界面Dzyaloshinskiii-Moriya相互作用驱动的.这种相互作用预计将实现内尔型磁skyrmion，其大小估计为$\sim$ 10 nm的拓扑霍尔电阻率的大小。结果表明，高质量的氧化物界面使我们能够调整系统的手性;这可能是迈向未来拓扑电子学的一步。
英文摘要：
Electron transport coupled with magnetism has attracted attention over the years as exemplified in anomalous Hall effect due to a Berry phase in momentum space. Another type of unconventional Hall effect -- topological Hall effect, originating from the real-space Berry phase, has recently become of great importance in the context of magnetic skyrmions. We have observed topological Hall effect in bilayers consisting of ferromagnetic SrRuO$_3$ and paramagnetic SrIrO$_3$ over a wide region of both temperature and magnetic field. The topological term rapidly decreases with the thickness of SrRuO$_3$, ending up with the complete disappearance at 7 unit cells of SrRuO$_3$. Combined with model calculation, we concluded that the topological Hall effect is driven by interface Dzyaloshinskii-Moriya interaction, which is caused by both the broken inversion symmetry and the strong spin-orbit coupling of SrIrO$_3$. Such interaction is expected to realize the Néel-type magnetic skyrmion, of which size is estimated to be $\sim$10 nm from the magnitude of topological Hall resistivity. The results established that the high-quality oxide interface enables us to tune the chirality of the system; this can be a step towards the future topological electronics.
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