Atomically engineered oxide multilayers and superlattices display unique properties responsive to the electronic and atomic structures of the interfaces. We have followed the growth of ferroelectric BaTiO3 on SrRuO3 electrode with in situ atomic scale analysis of the surface structure at each stage. An oxygen-induced surface reconstruction of SrRuO3 leads to formation of SrO rows spaced at twice the bulk periodicity. This reconstruction modifies the structure of the first BaTiO3 layers grown subsequently, including intermixing observed with cross-section spectroscopy. These observations reveal that this common oxide interface is much more interesting than previously reported, and provide a paradigm for oxygen engineering of oxide structure at an interface.
We investigated the role of oxygen vacancy in n-type interface of LaAlO3 (LAO) overlayer on SrTiO3 (STO) (001) by carrying out density-functional-theory calculations. Comparing the total energies of the configurations with one vacancy in varying locations we found that oxygen vacancies favor to appear first in LAO surface. These oxygen vacancies in the surface generate a two-dimensional distribution of carriers at the interface, resulting in band bending at the interface in STO side. Dependent on the concentration of oxygen vacancies in LAO surface, the induced carrier charge at the interface …
The oxygen vacancy is a crucial intrinsic defect in metal-ultrathin oxide semiconductor heterostructures, and its formation at an interface is of great importance in determining the device performance and degradation. This paper presents an ab initio thermodynamic study of oxygen vacancies at metal/oxide interfaces. Electronic energies and entropies are calculated for defective interface systems, as a function of interface-vacancy distance. The study indicates that oxygen vacancies near the interface modify its bonding structure, and significantly change the thermodynamic properties of the sys…
The dielectric breakdown at metal-oxide interfaces is a critical electronic device failure mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation for this phenomenon. Theoretical band alignment studies, providing information about tunneling, have already been conducted in the literature for metal-oxide interfaces. However, most of the time materials were assumed defect free. Oxygen vacancies being very common in oxides, their effect on band lineup is of prime importance in understanding electron tunneling in realistic materials and devices. This work explores …
Using first-principles density functional theory calculations, we find a strong position and thickness dependence of the formation energy of oxygen vacancies in LaAlO3|SrTiO3 (LAO|STO) multilayers and interpret this with an analytical capacitor model. Oxygen vacancies are preferentially formed at p-type SrO|AlO2 rather than at n-type LaO|TiO2 interfaces; the excess electrons introduced by the oxygen vacancies reduce their energy by moving to the n-type interface. This asymmetric behavior makes an important contribution to the conducting (insulating) nature of n-type (p-type) interfaces while p…
The introduction of manganite buffer layers, La7/8Sr1/8MnO3 (LSMO) in particular, at the metallic interface between SrTiO3 (STO) and another band insulator suppresses the carrier density of the interfacial two-dimensional electron gas (2DEG) and improves significantly the electron mobility. However, the mechanisms underlying the extreme mobility enhancement remain elusive. Herein, we used 18O isotope exchanged SrTi18O3 as substrates to create 2DEG at room temperature with and without the LSMO buffer layer. By mapping the oxygen profile across the interface between STO18 and disordered LaAlO3 o…
We study the interface between carbon nanotubes (CNTs) and surface-deposited titanium using electron microscopy and photoemission spectroscopy, supported by density functional calculations. Charge transfer from the Ti atoms to the nanotube and carbide formation is observed at the interface which indicates strong interaction. Nevertheless, the presence of oxygen between the Ti and the CNTs significantly weakens the Ti?CNT interaction. Ti atoms at the surface will preferentially bond to oxygenated sites. Potential sources of oxygen impurities are examined, namely oxygen from any residual atmosph…
The atomic surface and interface structure of bare and metal-coated ZnO(0001) Zn-polar wafers were investigated via surface x-ray diffraction. All bare samples showed the presence of a (1x1) overlayer of oxygen atoms located at the on-top position above the terminating Zn atom, a structure predicted to be unstable by several density functional theory calculations. The same oxygen overlayer is clearly seen at the interface of ZnO with both elemental and oxidized metal contact layers. No significant atomic relaxations are observed at surfaces and interfaces processed under typical device fabrica…
Strontium doped lanthanum manganite thin films were deposited by pulsed laser deposition on yttria stabilized zirconia single crystals for a comprehensive electrochemical characterization of the material acting as a cathode. A physically meaningful electrical model was employed to fit the electrochemical impedance spectroscopy results in order to extract the main oxygen mass transport parameters as a function of the temperature and oxygen partial pressure. The oxygen diffusion and surface exchange coefficients extracted from the analysis showed several orders of magnitude of enhancement with r…
Modifications of the electronic bands of thin FeSe films due to oxygen vacancies in the supporting SrTiO 3 (001) substrate - and the interplay with spin-orbit coupling, magnetism, and epitaxy - are investigated by first-principles supercell calculations. Unfolded (k-projected) bands show that the oxygen vacancies both provide electron doping to the interface FeSe layer and also have notable effects on the details of the bands around the Fermi level, including renormalizing the width of the Fe-3d band near the Fermi level by a factor of about 0.6, and causing a splitting of ~40 meV at the M poi…
Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at the interface, indicative of a dipole-like electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-i…
Pitting corrosion is a much-studied and technologically relevant subject. However, the fundamental mechanisms responsible for the breakdown of the passivating oxide layer are still subjects of debate. Chloride anions are known to accelerate corrosion; relevant hypotheses include Cl insertion into positively charged oxygen vacancies in the oxide film, and Cl adsorption on passivating oxide surfaces, substituting for surface hydroxyl groups. In this work, we conduct large-scale first principles modeling of explicit metal/Al(2)O(3) interfaces to investigate the energetics and electronic structure…
We perform a density functional theory study of the effects of oxygen adsorption on the structural and electronic properties of Gr/Co(0001) and Gr/Co/Ir(111) interfaces. In both interfaces, the graphene-Co distance increases with increasing O concentration. The oxygen intercalation effectively decreases the electronic interaction, preventing the hybridization of graphene states with Co $d$-orbitals, hence (partly) restoring the typical Dirac cone of pristine graphene. In the case of graphene/Co 1ML/Ir(111), which presents a moiré pattern, the interplay between the O distribution and the contin…
Combination of neutron and X-ray reflectometry was used to study the vertical structure of 100 nm-thin copper films with implanted oxygen ions of energy E = [10-30] keV and doses D=[0.2-5.4]x$10^{16}$ $cm^{-2}$. The study shows that oxygen ion implantation with an energy of E = 30 keV leads to the formation of a 3 nm thick layer on the surface. Density and copper/oxygen stoichiometry of the observed surface layer are close to $Cu_2O$ oxide. We attribute the $Cu_2O$ oxide formation to highly mobilized copper atoms generated by stimulated ion implantation.
In this work we study the electronic structure and magnetism of a TiO2 film grown on another non-magnetic oxide such as a LaAlO3 (001) substrate, concentrating on the role played by structural relaxation and oxygen vacancies. Using Density Functional Theory ab-initio methods, we study the free-standing anatase film as well as the interfaces with either the LaO or AlO2 planes of LaAlO3, focusing on the possibility of magnetic solutions. Our results show that the interface LaO/TiO2 is favored against the AlO2/TiO2 one if no oxygen vacancies are present in the interface whereas the contrary happe…
The knowledge of how oxygen atoms are distributed at a magnetic-metal / oxide, or magnetic-metal / non-magnetic-metal interface, can be an useful tool to optimize device production. Multilayered Ni81Fe19 / Ta samples consisting of 15 bilayers of 2.5 nm each, grown onto glass substrates by magnetron sputtering from Ni81Fe19 and Ta targets, have been investigated. X-ray absorption near edge structure, extended X-Ray absorption fine structure, small angle X-ray diffraction, and simulations, were used to characterize the samples. Oxygen atoms incorporated onto Ni81Fe19 films during O2 exposition a…
Complex oxide functionality, such as ferroelectricity, magnetism or superconductivity is often achieved in epitaxial thin-film geometries. Oxygen vacancies tend to be the dominant type of defect in these materials but a fundamental understanding of their stability and electronic structure has so far mostly been established in the bulk or strained bulk, neglecting interfaces and surfaces present in a thin-film geometry. We investigate here, via density functional theory calculations, oxygen vacancies in the model system of a SrMnO$_3$ (SMO) thin film grown on a SrTiO$_3$ (STO) (001) substrate. …
We report that annealing in low-oxygen-partial-pressure (low-p$_{\rm O2}$) ambient is effective in reducing the interface state density (D$_{\rm IT}$) at a SiC (0001)/SiO$_{\rm 2}$ interface near the conduction band edge (E$_{\rm C}$) of SiC. The D$_{\rm IT}$ value at E$_{\rm C}$$-$0.2 eV estimated by a high (1 MHz)-low method is 6.2$\times$10$^{12}$ eV$^{-1}$cm$^{-2}$ in as-oxidized sample, which is reduced to 2.4${\times}$10$^{12}$ eV$^{-1}$cm$^{-2}$ by subsequent annealing in O$_{\rm 2}$ (0.001%) at 1500${}^\circ$C, without interface nitridation. Although annealing in pure Ar induces leakag…
The results of DFT supercell calculations of oxygen behavior upon the UN (001) and (110) surfaces as well as at the tilt grain boundary are presented. Oxygen adsorption, migration, incorporation into the surface N vacancies on (001) and (110) surfaces have been modeled using 2D slabs of different thicknesses and supercell sizes. The temperature dependences of the N vacancy formation energies and oxygen incorporation energies are calculated. We demonstrate that O atoms easily penetrate into UN surfaces and grain boundaries containing N vacancies, due to negative incorporation energies and a sma…
The structural, electronic, and adhesive properties of Cu/SiO$_2$ interfaces are investigated using first-principles density-functional theory within the local density approximation. Interfaces between fcc Cu and $α$-cristobalite(001) surfaces with different surface stoichiometries are considered. Interfacial properties are found to be sensitive to the choice of the termination, and the oxygen density at the substrate surface is the most important factor influencing the strength of adhesion. For oxygen-rich interfaces, the O atoms at the interface substantially rearrange after the deposition o…
Mechanism of Oxygen Reduction via Chemical Affinity in NiO/SiO2 Interfaces Irradiated with keV Energy Hydrogen and Helium Ions for Heterostructure Fabrication
We have studied the interfacial Dzyaloshinskii-Moriya interaction (DMI) in a series of Pt/Co/MOx (M=Al, Gd) trilayers in which the degree of oxidation of the top Co interface is varied. To access to reliable values of the DMI strength, we have used a method based on the measurement of the saturation velocity of field driven chiral Néel domain walls. We show that the effective DMI strength in the Pt/Co/MOx trilayers varies with the oxidation degree of the Co/MOx interface. This strongly suggests that the Co/MOx interface gives a distinct contribution to the total DMI, adding to that of the Pt/C…
Nickel and Rhodium (001) surfaces display a similar - as from STM images - clock reconstruction when half a monolayer of C/Ni, N/Ni or O/Rh is adsorbed; no reconstruction is observed instead for O/Ni. Adsorbate atoms sit at the center of the black squares of a chess-board, $c(2\times 2)$, pattern and two different reconstructions are actually compatible with the observed STM images - showing a $(2\times 2)p4g$ pattern - according to whether a rotation of the black or white squares occurs. We report on a first - principles study of the structure of X/Ni(001) and X/Rh(001) surfaces (X=C,N,O) at …
We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced co…
Supercapacitors have recently gained popularity as possible energy storage systems due to their high cycling ability and increased power density. However, one of the major drawbacks of supercapacitors is that they have a low energy density, which makes them less effective than batteries. Herein, we explore different methods of increasing the supercapacitor performance of the perovskite SrCoO3. We carry out first-principles calculations to systematically study how SrCoO3/graphene interface, oxygen vacancies, and doping improve the performance of strontium cobaltite as an anion-intercalation-typ…
Atomic-scale understanding of HfO2 ferroelectricity is important to help address many challenges in developing reliable and high-performance ferroelectric HfO2 (fe-HfO2) based devices. Though investigated from different angles, a factor that is real device-relevant and clearly deserves more attention has largely been overlooked by previous research, namely, the fe-HfO2/dielectric interface. Here, we investigate the electronic structures of several typical interfaces formed between ultrathin fe-HfO2 and oxide dielectrics in the sub-3-nm region. We find that interface formation introduces strong…
With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequence…
The interface chemistry of silicon nanocrystals (NCs) embedded in amorphous oxide matrix is studied through molecular dynamics simulations with the chemical environment described by the reactive force field model. Our results indicate that the Si NC-oxide interface is more involved than the previously proposed schemes which were based on solely simple bridge or double bonds. We identify different types of three-coordinated oxygen complexes, previously not noted. The abundance and the charge distribution of each oxygen complex is determined as a function of the NC size as well as the transition…
We report on a first-principles study of the structure of O/Rh(001) at half a monolayer of oxygen coverage, performed using density-functional theory. We find that oxygen atoms sit at the center of the black squares of a chess-board, $c(2\times 2)$, pattern. This structure is unstable against a rhomboid distortion of the black squares, which shortens the distance between an O atom and two of the four neighboring Rh atoms, while lengthening the distance with respect to the other two. We actually find that the surface energy is further lowered by allowing the O atom to get off the short diagonal…
We provide insights into the influence of surface termination on the oxygen vacancy incorporation for the perovskite model material SrTiO3 during annealing in reducing gas environments. We present a novel approach to control to tailor the oxygen vacancy formation by controlling the termination. We prove that a SrO-termination can inhibit the incorporation of oxygen vacancies across the (100)-surface and apply this to control their incorporation during thin film growth. Utilizing the conducting interface between LaAlO3 and SrTiO3, we could tailor the oxygen-vacancy based conductivity contributi…
Disorder, primarily in the form of oxygen vacancies, cation stoichiometry and atomic inter-diffusion, appear to play vital roles in the electronic and transport properties of the metallic electron liquid at the oxide hetero-interfaces. Antisite disorder is also understood to be a key player in this context. In order to delineate the roles of two of these key factors, oxygen vacancy and antisite disorder, we have investigated the effect of oxygen vacancy on the antisite disorder at a number of interfaces separating two La-based transition metal oxides using density functional theory. Oxygen vac…
This paper investigates the transition from abrasive to adhesive wear in gross-slip fretting assuming contact oxygenation concept which suggests that adhesion appears in the inner part of the interface if the di-oxygen partial pressure is below a threshold value. In the lateral sides, where di-oxygen molecules are sufficient, oxidation and abrasion prevail. To assess this phenomenon, 34NiCrMo16 flat-on-flat contacts are tested. Contact oxygenation is quantified using the ''oxygen-distance, '' parameter defined as the averaged width of the external abrasion corona. Confirming this concept, decr…
Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO\_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprising a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on a Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for th…
Thin molecular films under model conditions are often exploited as benchmarks and case studies to investigate the electronic and structural changes occurring on the surface of metallic electrodes. Here we show that the modification of a metallic surface induced by oxygen adsorption allows the preservation of the geometry of a molecular adlayer, giving access to the determination of molecular orbital symmetries by means of near-edge x-ray absorption fine structure spectroscopy, NEXAFS. As a prototypical example, we exploited Nickel Tetraphenyl Porphyrin molecules deposited on a bare and on an o…
The uranium mononitride (UN) is a material considered as a promising candidate for Generation-IV nuclear reactor fuels. Unfortunately, oxygen in air affects UN fuel performance and stability. Therefore, it is necessary to understand the mechanism of oxygen adsorption and further UN oxidation in the bulk and at surface. Recently, we performed a detailed study on oxygen interaction with UN surface using density functional theory (DFT) calculations. We were able to identify an atomistic mechanism of UN surface oxidation consisting of several important steps, starting with the oxygen molecule diss…
Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO is not depending on the substrate orientation, i.e. tc (a-LAO/(110)STO) ~ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: tc(a-LAO/(110)STO) < tc(a-YSZ/(110)STO) < tc(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinit…
Strontium titanate, SrTiO3, a widely used substrate material for electronic oxide thin film devices, has provided many interesting features. In a combination with a similar oxide material, LaAlO3, it has recently received great interest. It was suggested that two-dimensional electron gas is formed at the interface between SrTiO3 and LaAlO3, resulting in high electrical conductivity and mobility. In this report we demonstrate that the transport properties in those heterostructures are very sensitive to the deposition parameters during thin film growth. Using cathode- and photoluminescence studi…
State Key Laboratory of Silicon and Advanced Semiconductor Materials and Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University（浙江大学材料科学与工程学院）；Yusuf Hamied Department of Chemistry, University of Cambridge（剑桥大学化学系）；Institute of Fundamental and Transdisciplinary Research, Zhejiang University（浙江大学基础与交叉研究院）；Zhejiang Key Laboratory of Low-Carbon Synthesis of Value-Added Chemicals（斯科尔科沃科学技术研究所）；Skolkovo Institute of Science and Technology
We study the electronic structures of TiO2/Ti4O7 and Ta2O5/TaO2 interfaces using the screened exchange (sX-LDA) functional. Both of these bilayer structures are useful infrastructures for high performance RRAMs. We find that the system Fermi energies of both interfaces are just above the conduction band edge of the corresponding stoichiometric oxides. According to the charge transition levels of the oxygen vacancies in Ta2O5 and TiO2, the oxygen vacancies are stabilized at the -2 charged state. We propose to introduce interfacial dopants to shift the system Fermi energies downward so that the …
We derive a formula, useful for first-principles calculations, which relates the free energy of an oxide/metal interface to the free energies of surfaces and the work of separation of the interface. We distinguish the latter {\it mechanical} quantity from the {\it thermodynamic} work of adhesion, and we describe explicitly how both may be calculated. Our formulae for interfacial and surface energies are cast in terms of quantities which can be calculated or looked up in tables, and include as additional parameters the ambient temperature and partial pressure of oxygen $P_{O_2}$. From total ene…
A high-frequency optical phonon mode of SrTiO3 (STO) was found to assist the high-temperature superconductivity observed recently at the interface between monolayer FeSe and STO substrate. However, the origin of this mode is not clear. Through first-principles calculations, we find that there is a novel polar phonon mode on the surface layers of the STO substrate, which does not exist in the STO crystals. The oxygen vacancies near the FeSe/STO interface drives the dispersion of this phonon mode to be flat and lowers its energy, whereas the charge transfer between STO substrate and FeSe monolay…
A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the interface. We find that the surface anisotropy energy exhibits a Boltzmann sigmoidal behavior as a function of the migrated O-atoms concentration. The obtained variation of the VCMA efficiency factor $β$ reveals a saturation limit beyond a critical concentration of migrated O, about $54\%$, at which the anisotropy switches from perpendicular to in plane. Fur…
Obtaining an accurate theoretical description of the emergent phenomena in oxide heterostructures is a major challenge. Recently, intriguing paramagnetic spin and pinned orbital moments have been discovered by x-ray magnetic circular dichroïsm measurements at the Cu $L_{2,3}$-edge of a tetragonal CuO/SrTiO$_3$ heterostructure. Using first principles calculations, we propose a scenario that explains both types of moments, based on the formation of oxygen vacancies in the TiO$_2$ interface layer. We show the emergence of a paramagnetic 2D electron gas hosted in the interface CuO layer. It is inv…
We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell (uc), the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.
The combination of the surface science techniques (STM, XPS, ARPES) and density-functional theory calculations was used to study the decoupling of graphene from Ni(111) by oxygen intercalation. The formation of the antiferromagnetic (AFM) NiO layer at the interface between graphene and ferromagnetic (FM) Ni is found, where graphene protects the underlying AFM/FM sandwich system. It is found that graphene is fully decoupled in this system and strongly $p$-doped via charge transfer with a position of the Dirac point of $(0.69\pm0.02)$ eV above the Fermi level. Our theoretical analysis confirms a…
We present a specially designed evolutionary algorithm for the prediction of surface reconstructions. This new technique allows one to automatically explore all the low-energy configurations with variable surface atoms and variable surface unit cells through the whole chemical potential range. The power of evolutionary search is demonstrated by the efficient identification of diamond 2*1 (100) and 2*1 (111) surfaces with a fixed number of surface atom and a fixed cell size. With further variation of surface unit cells, we study the reconstructions of the polar surface MgO (111). Experiment has…
We present first-principles calculations of the structural and electronic properties of Si(001)-SiO2 interfaces. We first arrive at reasonable structures for the c-Si/a-SiO2 interface via a Monte-Carlo simulated annealing applied to an empirical interatomic potential, and then relax these structures using first-principles calculations within the framework of density-functional theory. We find a transition region at the interface, having a thickness on the order of 20Å, in which there is some oxygen deficiency and a corresponding presence of sub-oxide Si species (mostly Si^+2 and Si^+3). Distri…
Understanding the role of defects in oxide heterostructures is crucial for future materials control and functionalization. We hence study the impact of oxygen vacancies (OVs) at variable concentrations on orbital- and spin exchange in the LaAlO$_3$/SrTiO$_3$ interface by first principles many-body theory and real-space model-Hamiltonian techniques. Intricate interplay between Hubbard $U$ and Hund's coupling $J_{\rm H}$ for OV-induced correlated states is demonstrated. Orbital polarization towards an effective $e_g$ state with predominant local antiferromagnetic alignment on Ti sites near OVs i…
In this paper we study the possible relation between the electronic and magnetic structure of the TiO2/LaAlO3 interface and the unexpected magnetism found in undoped TiO2 films grown on LaAlO$_3$. We concentrate on the role played by structural relaxation and interfacial oxygen vacancies. LaAlO3 has a layered structure along the (001) direction with alternating LaO and AlO2 planes, with nominal charges of +1 and -1, respectively. As a consequence of that, an oxygen deficient TiO2 film with anatase structure will grow preferently on the AlO2 surface layer. We have therefore performed ab-initio …
The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO3 have called in question the original polarization catastrophe model. We resolve the issue by a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thicknes…
The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive and coherent picture that the interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies fully compensates the polarization potential divergence in LaAlO$_{3}$/SrTiO$_{3}$, explaining naturally the experimental observations under different conditions. While lattice distortions and a charge redistribution between LaO and AlO$_2…
We show that oxygen vacancies at titanate interfaces induce a complex multiorbital reconstruction which involves a lowering of the local symmetry and an inversion of t2g and eg orbitals resulting in the occupation of the eg orbitals of Ti atoms neighboring the O vacancy. The orbital reconstruction depends strongly on the clustering of O vacancies and can be accompanied by a magnetic splitting between the local eg orbitals with lobes directed towards the vacancy and interface dxy orbitals. The reconstruction generates a two-dimensional interface magnetic state not observed in bulk SrTiO3. Using…
Using an effective one-band Hubbard model with disorder, we consider magnetic states of the correlated oxide interfaces, where effective hole self-doping and a magnetially ordered state emerge due to electronic and ionic reconstructions. By employing the coherent potential approximation, we analyze the effect of random oxygen vacancies on the two-dimensional magnetism. We find that the random vacancies enhance the ferromagnetically ordered state and stabilize a robust magnetization above a critical vacancy concentration of about c=0.1. In the strong-correlated regime, we also obtain a nonmonot…
We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on density functional theory. Depending on the concentration, the presence of these defects in LaAlO3 slab can suppress the surface conductivity. In contrast, in insulating SrTiO3 slabs already very small concentrations of oxygen vacancies or hydrogen dopant atoms induce a finite occupation of the conduction band. Surface defects in insulating LaAlO3/SrTiO3 het…
Polar perovskite oxide surfaces are subject to structural reconstruction as a possible stabilisation mechanisms, which changes the surface structure and hence the surface chemistry. To investigate this effect, we study the oxygen evolution reaction (OER) on the reconstructed (001) surface of NaTaO$_3$, by means of density functional theory (DFT) calculations and compare it with the non-polar (113) surface of the same material. For the clean surface the reconstruction has a beneficial effect on the catalytic activity, lowering the minimal overpotential from 0.88 V to 0.70 V while also changing …
Interface engineering in perovskite oxide superlattices has developed into a flourishing field, enabling not only further tuning of the exceptional properties, but also giving access to emergent physical phenomena. Here, we reveal a new mechanism for enhancing the electric polarization by the interface-induced oxygen octahedral tilts in BaTiO3/CaTiO3 superlattices. By combining a novel genetic algorithm with density functional theory (DFT), we predict that the true ground states in 1:1 and 2:2 BaTiO3/CaTiO3 superlattices grown on SrTiO3 adopt Pc symmetry with a large proper electric polarizati…
