Using an effective one-band Hubbard model with disorder, we consider magnetic states of the correlated oxide interfaces, where effective hole self-doping and a magnetially ordered state emerge due to electronic and ionic reconstructions. By employing the coherent potential approximation, we analyze the effect of random oxygen vacancies on the two-dimensional magnetism. We find that the random vacancies enhance the ferromagnetically ordered state and stabilize a robust magnetization above a critical vacancy concentration of about c=0.1. In the strong-correlated regime, we also obtain a nonmonotonic increase of the magnetization upon an increase of vacancy concentration and a substantial increase of the magnetic moments, which can be realized at oxygen reduced high-Tc cuprate interfaces.
Disorder, primarily in the form of oxygen vacancies, cation stoichiometry and atomic inter-diffusion, appear to play vital roles in the electronic and transport properties of the metallic electron liquid at the oxide hetero-interfaces. Antisite disorder is also understood to be a key player in this context. In order to delineate the roles of two of these key factors, oxygen vacancy and antisite disorder, we have investigated the effect of oxygen vacancy on the antisite disorder at a number of interfaces separating two La-based transition metal oxides using density functional theory. Oxygen vac…
Magnetism of transition metal (TM) oxides is usually described in terms of the Heisenberg model, with orientation-independent interactions between the spins. However, the applicability of such a model is not fully justified for TM oxides because spin polarization of oxygen is usually ignored. In the conventional model based on the Anderson principle, oxygen effects are considered as a property of the TM ion and only TM interactions are relevant. Here, we perform a systematic comparison between two approaches for spin polarization on oxygen in typical TM oxides. To this end, we calculate the ex…
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severe…
Electric pulse induced resistance (EPIR) switching hysteresis loops for Pr0.7Ca0.7MnO3 (PCMO) perovskite oxide films were found to exhibit an additional sharp "shuttle peak" around the negative pulse maximum for films deposited in an oxygen deficient ambient. The device resistance hysteresis loop consists of stable high resistance and low resistance states, and transition regions between them. The resistance relaxation of the "shuttle peak" and its temperature behavior as well as the resistance relaxation in the transition regions were studied, and indicate that the resistance switching relate…
Artificial perovskite-oxide nanostructures possess intriguing magnetic properties due to their tailorable electron-electron interactions, which are extremely sensitive to the oxygen coordination environment. To date, perovskite-oxide nanodots with sizes below 50 nm have rarely been reported. Furthermore, the oxygen octahedral distortion and its relation to magnetic properties in perovskite oxide nanodots remain unexplored yet. Here, we have studied the magnetic anisotropy in patterned SrRuO3 (SRO) nanodots as small as 30 nm while performing atomic-resolution electron microscopy and spectroscop…
Interaction-driven metal-insulator transitions or Mott transitions are widely observed in condensed-matter systems. In multi-orbital systems, many-body physics is richer in which an orbital-selective metal-insulator transition is an intriguing and unique phenomenon. Here we use first-principles calculations to show that a magnetic transition (from paramagnetic to long-range magnetically ordered) can simultaneously induce an orbital-selective insulator-metal transition in rock-salt ordered double perovskite oxides $A_2BB'$O$_6$ where $B$ is a non-magnetic ion (Y$^{3+}$ and Sc$^{3+}$) and $B'$ a…
We investigate the magnetic instabilities of the two-dimensional model of interacting e_g electrons for hole doping away from two electrons per site in the mean-field approximation. In particular, we address the occurrence of orbitally polarized states due to the inequivalent orbitals, and their interplay with ferromagnetic and antiferromagnetic spin order. The role played by the Hund's exchange coupling J_H and by the crystal field orbital splitting E_z in stabilizing one of the competing phases is discussed in detail.
The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properti…
Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selecti…
Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most important step in shaping a well-defined functional interface. Here, we studied interface formation and strain evolution during the initial growth of LaAlO3 on SrTiO3 by pulsed laser deposition, in search…
Obtaining an accurate theoretical description of the emergent phenomena in oxide heterostructures is a major challenge. Recently, intriguing paramagnetic spin and pinned orbital moments have been discovered by x-ray magnetic circular dichroïsm measurements at the Cu $L_{2,3}$-edge of a tetragonal CuO/SrTiO$_3$ heterostructure. Using first principles calculations, we propose a scenario that explains both types of moments, based on the formation of oxygen vacancies in the TiO$_2$ interface layer. We show the emergence of a paramagnetic 2D electron gas hosted in the interface CuO layer. It is inv…
The isotope effect provided a crucial key to the development of the BCS (Bardeen-Cooper-Schrieffer) microscopic theory of superconductivity for conventional superconductors. In superconducting cooper oxides (cuprates) showing an unconventional type of superconductivity, the oxygen isotope effect is very peculiar: the exponential coefficient strongly depends on doping level. No consensus has been reached so far on the origin of the isotope effect in the cuprates. Here we show that the oxygen isotope effect in cuprates is in agreement with the bisoliton theory of superconductivity.
A general spin-state model and a qualitative physical picture have been proposed for a class of lately synthesized layered cobalt oxides (LCOs) by means of density functional calculations. As the plane corrugation of the cobalt-oxygen layer decreases, the LCOs evolve from a high-spin (HS) superexchange-coupled antiferromagnetic (AFM) insulator to an almost-HS AFM/ferromagnetic (FM) competing system where the FM coupling is mediated via the p-d exchange by an increasing amount of delocalized pdσholes having mainly the planar O 2p character. It is tentatively suggested that the delocalized holes…
Manganites are technologically important materials, used widely as solid oxide fuel cell cathodes: they have also been shown to exhibit electroresistance. Oxygen bulk diffusion and surface exchange processes are critical for catalytic action, and numerous studies of manganites have linked electroresistance to electrochemical oxygen migration. Direct imaging of individual oxygen defects is needed to underpin understanding of these important processes. It is not currently possible to collect the required images in the bulk, but scanning tunnelling microscopy could provide such data for surfaces.…
We investigate the effect of oxygen-oxygen hopping on the three-band copper-oxide model relevant to high-$T_c$ cuprates, finding that the physics is changed only slightly as the oxygen-oxygen hopping is varied. The location of the metal-insulator phase boundary in the plane of interaction strength and charge transfer energy shifts by $\sim 0.5$eV or less along the charge transfer axis, the quasiparticle weight has approximately the same magnitude and doping dependence and the qualitative characteristics of the electron-doped and hole-doped sides of the phase diagram do not change. The results …
We use the Local Density Approximation in combination with the Dynamical Mean Field Theory to carry out a comparative investigation of a typical electron doped and a typical hole doped copper oxide, NCCO and LSCO respectively. The parent compounds of both materials are strongly correlated electron systems in the vicinity of the metal to charge transfer insulator transition. In NCCO the magnetic long range order is essential to open a charge transfer gap, while Mott physics is responsible for the gap in LSCO. We highlights the role of the apical oxygens in determining the strength of the correl…
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, oxygen vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling oxygen vacanci…
Here results of a systematic study on oxygen stoichiometry are reported for the first three members of the novel CoSr2(Y,Ce)sCu2O5+2s or Co-12s2 homologous series, i.e. Co-1212, Co-1222 and Co-1232 phases with a SrO-CoO1-SrO-CuO2-(Y,Ce)-[O2-(Y,Ce)]s-1-CuO2 layered structure. The oxygen content was precisely determined by two independent chemical techniques: coulometric Cu+/Cu2+ titration and iodometric titration. Furthermore, oxygen stability/tunability was investigated by means of oxygenative and reductive an-nealings carried out in a thermobalance. It was revealed that all the three phases a…
We report on a study of charge transport in EuTiO$_{3-δ}$ single crystals with carrier density tuned across several orders of magnitude. Comparing this system with other quasi-cubic perovskites, in particular strontium titanate, we draw a comprehensive picture of metal-insulator transition and dilute metallicity in this $AB$O$_3$ family. Because of a lower electric permittivity, the metal-insulator transition in EuTiO$_{3-δ}$ occurs at higher carrier densities compared to SrTiO$_3$. At low temperature, a distinct $T^2$ resistivity is visible. Its prefactor $A$ smoothly decreases with increasin…
Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crystal, the pre-existing VO is always removed via careful post-annealing treatment at high temperature in air or oxygen atmosphere. However, the annealing conditions is difficult to control and the removal of VO in bulk phase is restrained due to high energy barrier of VO migration. Here, we selected VO2 crystal film as the model system and developed an alternative annealing treatment aided by controllable hydrogen doping…
It has been generally accepted that the threshold structure observed in the oxygen K edge X-ray absorption spectrum in 3d transition metal oxides represents the electronic structure of the 3d transition metal. There is, however, no consensus about the correct description. We present an interpretation, which includes both ground state hybridization and electron correlation. It is based on a configuration interaction cluster calculation using a MO6 cluster. The oxygen K edge spectrum is calculated by annihilating a ligand hole in the ground state and is compared to calculations representing inve…
Coulomb interaction between electrons on p-orbitals of oxygen atom in strongly correlated compounds is not negligible, since its value (U_p) has comparable order of magnitude with the value of Coulomb interaction on d-orbitals of transition metal atom (U_d). We investigate the effect of taking into account Coulomb correlations in oxygen p-shell in addition to the correlations in the transition metal d-shell in frame of the LDA+U method. Our calculations for NiO, MnO and La2CuO4 show that this additional correction in general improves the agreement with experimental data for the spectral (energ…
The oxygen-exchange behavior has been studied in half-doped manganese and cobalt perovskite oxides. We have found that the oxygen diffusivity in Gd_{0.5}Ba_{0.5}MnO_{3-δ} can be enhanced by orders of magnitude by inducing crystallographic ordering among lanthanide and alkali-earth ions in the A-site sublattice. Transformation of a simple cubic perovskite, with randomly occupied A-sites, into a layered crystal GdBaMn_2O_{5+x} (or isostructural GdBaCo_2O_{5+x} for cobalt oxide) with alternating lanthanide and alkali-earth planes reduces the oxygen bonding strength and provides disorder-free chan…
Epitaxial strain is a proven route to enhancing the properties of complex oxides, however, the details of how the atomic structure accommodates strain are poorly understood due to the difficulty of measuring the oxygen positions in thin films. We present a general methodology for determining the atomic structure of strained oxide films via x-ray diffraction, which we demonstrate using LaNiO3 films. The oxygen octahedral rotations and distortions have been quantified by comparing the intensities of half-order Bragg peaks, arising from the two unit cell periodicity of the octahedral rotations, w…
Resistivity and dc magnetization measurements were performed for the polycrystalline Pr$_{0.5}$Ca$_{0.5}$Co$_{1-x}$Fe$_{x}$O$_{3-δ}$ ($x$ = 0, 0.05, 0.10 and 0.15) samples. The as-fabricated samples exhibit ferromagnetic (FM) transition and the transition temperature increases with increasing the iron doping level. Annealing under high oxygen pressure induces a spin-state transition of Co ions in the \emph{iron-free} sample and such transition is reinforced with increasing the annealing oxygen pressure, while the annealing under high oxygen pressure suppresses the ferromagnetic ordering. Contr…
Understanding the electronic charge distribution around oxygen vacancies in transition metal and rare earth oxides is a scientific challenge of considerable technological importance. We show how significant information about the charge distribution around vacancies in cerium oxide can be gained from a study of high resolution crystal structures of higher order oxides which exhibit ordering of oxygen vacancies. Specifically, we consider the implications of a bond valence sum analysis of Ce$_{7}$O$_{12}$ and Ce$_{11}$O$_{20}$. To illuminate our analysis we show alternative representations of the…
We have studied the [100]-[110] anisotropy of the Compton profile in the bilayer manganite. Quantitative agreement is found between theory and experiment with respect to the anisotropy in the two metallic phases (i.e. the low temperature ferromagnetic and the colossal magnetoresistant phase under a magnetic field of 7 T). Robust signatures of the metal-insulator transition are identified in the momentum density for the paramagnetic phase above the Curie temperature. We interpret our results as providing direct evidence for the transition from the metallic-like to the admixed ionic-covalent bon…
Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implication in device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By combining Kelvin probe force microscopy imaging and phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depolarisation field. When tailored, this nanoscale fl…
We report a study of the magnetoresistance (MR) of the metallic perovskite oxide LaNiO$_{3-δ}$ as a function of the oxygen stoichiometry $δ$ ($δ\leq$ 0.14), magnetic field (H $\leq 6T$) and temperature (1.5K $\leq $ T $\leq $ 25K). We find a strong dependence of the nature of MR on the oxygen stoichiometry. The MR at low temperatures change from positive to negative as the sample becomes more oxygen deficient (i.e, $δ$ increases). Some of the samples which are more resistive, show a resistivity minima at $T_{min}$ $\approx$ 20K. We find that in these samples the MR is positive at T > $T_{min}$…
An unusual Fe-H bonding rather than conventional OH bonding is identified at Fe3O4 (001) surface. This abnormal behavior is associated with the oxygen vacancies which exist on the surface region but also penetrate deep into the bulk Fe3O4. In contrast, OH bonding becomes preferential as generally expected on an ozone processed surface, which has appreciably less oxygen vacancies. Such bonding site selective behavior, depending on oxygen vacancy concentrations, is further confirmed with DFT calculations. The results demonstrate an opportunity for tuning the chemical properties of oxide surfaces…
High-transition-temperature superconductivity arises in copper oxides when holes or electrons are doped into the CuO2 planes of their insulating parent compounds. While hole-doping quickly induces metallic behavior and superconductivity in many cuprates, electron-doping alone is insufficient in materials such as R2CuO4 (R is Nd, Pr, La, Ce, etc.), where it is necessary to anneal an as-grown sample in a low-oxygen environment to remove a tiny amount of oxygen in order to induce superconductivity. Here we show that the microscopic process of oxygen reduction repairs Cu deficiencies in the as-gro…
Formation Gibbs free energy of point defects and oxygen clusters in uranium dioxide at high-pressure high-temperature conditions are calculated from first principles, using the LSDA+U approach for the electronic structure and the Debye model for the lattice vibrations. The phonon contribution on Frenkel pairs is found to be notable, whereas it is negligible for the Schottky defect. Hydrostatic compression changes the formation energies drastically, making defect concentrations depend more sensitively on pressure. Calculations show that, if no oxygen clusters are considered, uranium vacancy bec…
SrTiO$_3$ (STO) is the substrate of choice to grow oxide thin-films and oxide heterojunctions, which can form quasi-two-dimensional electronic phases that exhibit a wealth of phenomena, and, thus, a workhorse in the emerging field of metal-oxide electronics. Hence, it is of great importance to know the exact character of the STO surface itself under various oxygen environments. Using density functional theory within the spin generalized gradient approximation we have investigated the structural, electronic and magnetic properties of the oxygen-deficient STO surface. We find that the surface ox…
The dynamical mean-field theory of the three-band model of copper-oxide superconductors is used to calculate the doping dependence of the intensity of the oxygen K-edge x-ray absorption spectra of high-$T_c$ copper oxide superconductors. The model is found not to reproduce the results of a recent experiment, suggesting that at sufficiently high doping the physics beyond the conventional three-band model becomes important.
