arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1005.3100cond-mat.str-el
收藏

电子和空穴掺杂铜氧化物中的顶氧和关联强度

Apical oxygens and correlation strength in electron and hole doped copper oxides

Cedric Weber, Kristjan Haule, Gabriel Kotliar

摘要:

本文采用局域密度近似和动态平均场论相结合的方法,对典型的电子掺杂和空穴掺杂的铜氧化物NCCO和LSCO分别进行了比较研究。这两种材料的母体化合物在金属到电荷转移绝缘体转变附近都是强关联电子系统。在NCCO中,磁长程序是打开电荷转移能隙的必要条件,而在LSCO中,Mott物理是打开电荷转移能隙的必要条件。我们强调的作用,顶端的氧在确定强度的相关性,并获得整体良好的理论和几个实验确定的数量之间的协议。光学电导率,偏振X射线吸收和角分辨光电发射的结果,并与实验进行比较。

英文摘要:

We use the Local Density Approximation in combination with the Dynamical Mean Field Theory to carry out a comparative investigation of a typical electron doped and a typical hole doped copper oxide, NCCO and LSCO respectively. The parent compounds of both materials are strongly correlated electron systems in the vicinity of the metal to charge transfer insulator transition. In NCCO the magnetic long range order is essential to open a charge transfer gap, while Mott physics is responsible for the gap in LSCO. We highlights the role of the apical oxygens in determining the strength of the correlations and obtaining overall good agreement between theory and several experimentally determined quantities. Results for optical conductivity, polarized X-ray absorption and angle resolved photoemission are presented and compared with experiments.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑