Direct Observation of an Interface Dipole between Two Metallic Oxides Caused by Localized Oxygen Vacancies
A. Y. Borisevich, A. R. Lupini, J. He, E. A. Eliseev, A. N. Morozovska, G. S. Svechnikov, P. Yu, Y. H. Chu, R. Ramesh, S. T. Pantelides, S. V. Kalinin, S. J. Pennycook
Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at the interface, indicative of a dipole-like electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface LSMO layers. The results suggest that atomic-scale structural mapping can serve as a quantitative indicator of the presence of O vacancies at interfaces.
We use density functional calculations to investigate the accommodation and migration of oxygen vacancies in bulk hexagonal YMnO$_3$, and to study interactions between neutral ferroelectric domain walls and oxygen vacancies. Our calculations show that oxygen vacancies in bulk YMnO$_3$ are more stable in the Mn-O layers than in the Y-O layers. Migration barriers of the planar oxygen vacancies are high compared to oxygen vacancies in perovskites, and to previously reported values for oxygen interstitials in h-YMnO$_3$. The calculated polarization decreases linearly with vacancy concentration, wh…
Oxygen vacancies can be of utmost importance for improving or deteriorating physical properties of oxide materials. Here, we studied from first-principles the electronic and magnetic properties of oxygen vacancies in the double perovskite Sr$_2$FeMoO$_6$ (SFMO). We show that oxygen vacancies can increase the Curie temperature in SFMO, although the total magnetic moment is reduced at the same time. We found also that the experimentally observed valence change of the Fe ions from $3+$ to $2+$ in the x-ray magnetic circular dichroism (XMCD) measurements is better explained by oxygen vacancies tha…
Using density-functional-theory (DFT) calculations with the HSE06 hybrid functional, we accurately evaluate the critical thickness of LaAlO3 film for the intrinsic doping in LaAlO3/SrTiO3 (LAO/STO) heterstructures. The calculated critical thickness of 6 unit-cell (uc) layers suggests to rule out the intrinsic doping mechanism. We also calculate the density of oxygen vacancies on the LAO surface at varying LAO thicknesses, preparation oxygen pressures and temperatures by using the condition of chemical equilibrium and DFT calculations. We find that once LAO thickness >=3 uc high-density (~ 10^1…
Roles of oxygen vacancies on ferromagnetism in Ni doped In2O3: A hybrid functional study
采用基于杂化泛函理论的第一性原理计算研究了氧空位对Ni掺杂In $_2$ O $_3$电子和磁性的影响.结果表明，Ni掺杂的In $_2$ O $_3$体系具有铁磁半导体特性。然而，氧空位的存在下，在相邻的Ni对之间的反铁磁耦合的氧空位桥接。反铁磁耦合被认为是由于强烈的Ni 3d-O 2 p杂化的超交换的主导作用。因此，氧空位在Ni：In $_2$ O $_3$多晶样品的较低饱和磁化强度中起关键作用，如在实验中观察到的。
We report the enthalpy of oxygen vacancy formation in thin films of electron-doped SrTiO$_{3}$, under different degrees of epitaxial stress. We demonstrate that both compressive and tensile strain decrease this energy at a very similar rate, and promote the formation of stable doubly ionized oxygen vacancies. Moreover, we also show that unintentional cationic vacancies introduced under typical growth conditions, produce a characteristic rotation pattern of TiO$_6$ octahedra. The local concentration of oxygen vacancies can be modulated by an electric field with an AFM tip, changing not only the…
The consideration of oxygen vacancies influence on the relaxors with perovskite structure was considered in the framework of Landau-Ginzburg-Devonshire phenomenological theory. The theory applicability for relaxors is based on the existence of some hidden soft phonon polar mode in them, and its frequency could be zero at some negative temperature TC*. Main attention was paid to PZN-PLZT relaxor described by formula 0.3Pb(Zn1/3Nb2/3)O3-0.7(Pb0.96La0.04(ZrxTi1-x)0.99O3) with x = 0.52, where earlier experimental investigation of oxygen vacancies influence on the polar properties was performed and…
The quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate voltage sweep range is gradually increased in our device, we observe systematic generation and annihilation of oxygen vacancies evidenced from the hysteretic conductance behavior in graphene. Furthermore, based on the experimentally observed linear scaling relation between the effective capacitance and the voltage sweep range, a simple model is constructed to manifest the relationship among t…
The results of a comprehensive and systematic ab-initio based ground-state search for the structural arrangement of oxygen vacancies in rutile phase TiO$_2$ provide new insights into their memristive properties. We find that O vacancies tend to form planar arrangements which relax into structures exhibiting metallic behavior. These meta-stable arrangements are structurally akin to, yet distinguishable from the Magnéli phase. They exhibit a more pronounced metallic nature, but are energetically less favorable. Our results confirm a clear structure-property relationship between segregated oxygen…
We use first-principles calculations based on density functional theory to investigate the interplay between oxygen vacancies, A-site cation size / tolerance factor, epitaxial strain, ferroelectricity and magnetism in the perovskite manganite series, AMnO3 (A=Ca2+, Sr2+, Ba2+). We find that, as expected, increasing the volume through either chemical pressure or tensile strain generally lowers the formation energy of neutral oxygen vacancies consistent with their established tendency to expand the lattice. Increased volume also favors polar distortions, both because competing rotations of the o…
Tungsten trioxide (WO$_3$) is a paradigmatic electrochromic material, whose peculiar optical properties in the presence of oxygen vacancies or intercalated alkali atoms have been observed and investigated for a long time. In this paper we propose a rationalization of experiments based on first-principles calculations of optical and electrical properties of oxygen deficient (reduced) WO$_3$. Our approach is based on a parameter-free dielectric-dependent hybrid density functional methodology, used in combination with the charge transition levels formalism, for studying excitation mechanisms in t…
The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 C. By applying a small biaxial tensil…
Modifications of the electronic bands of thin FeSe films due to oxygen vacancies in the supporting SrTiO 3 (001) substrate - and the interplay with spin-orbit coupling, magnetism, and epitaxy - are investigated by first-principles supercell calculations. Unfolded (k-projected) bands show that the oxygen vacancies both provide electron doping to the interface FeSe layer and also have notable effects on the details of the bands around the Fermi level, including renormalizing the width of the Fe-3d band near the Fermi level by a factor of about 0.6, and causing a splitting of ~40 meV at the M poi…
We demonstrate a thermodynamic formulation to quantify defect formation energetics in an insulator under high electric field. As a model system, we analyzed neutral oxygen vacancies (color centers) in alkaline-earth-metal binary oxides using density functional theory, Berry phase calculations, and maximally localized Wannier functions. Work of polarization lowers the field dependent electric Gibbs energy of formation of this defect. This is attributed mainly to the ease of polarizing the two electrons trapped in the vacant site, and secondarily to the defect induced reduction in bond stiffness…
The electronic structure of SrTiO3(001) surfaces was studied using scanning tunneling spectroscopy and density-functional theory. With high dynamic range measurements, an in-gap transition level was observed on SrO-terminated surfaces, at 2.7 eV above the valence band maximum. The density of centers responsible for this level was found to increase with surface segregation of oxygen vacancies and decrease with exposure to molecular oxygen. Based on these finding, the level is attributed to surface O vacancies. A level at a similar energy is predicted theoretically on SrO-terminated surfaces. Fo…
Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n-type conductivity in ZnO has been still unsettled in the past fifty years. Here we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately-controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We …
There is considerable interest in the pH-dependent switchable biocatalytic properties of cerium oxide nanoparticles (CeNPs) in biomedicine, where these materials exhibit beneficial antioxidant activity against reactive oxygen species at neutral and basic physiological pH but cytotoxic prooxidant activity at acidic pathological pH. Oxygen vacancies play a key role in such biocatalytic activities. While the general characteristics of the role of oxygen vacancies are known, the mechanism of their action at the atomic scale under different pH conditions has yet to be elucidated. The present work a…
Oxygen vacancies in transition metal oxides facilitate catalysis critical for energy storage and generation. However, it has proven elusive to promote vacancies at the lower temperatures required for operation in devices such as metal-air batteries and portable fuel cells. Here, we use thin films of the perovskite-based strontium cobaltite (SrCoOx) to show that epitaxial strain is a powerful tool towards manipulating the oxygen content under conditions consistent with the oxygen evolution reaction, yielding increasingly oxygen deficient states in an environment where the cobaltite would normal…
We investigate the behavior of oxygen vacancies in three different metal-oxide semiconductors (rutile and anatase TiO2, monoclinic WO3, and tetragonal ZrO2) using a recently proposed hybrid density-functional method in which the fraction of exact exchange is material-dependent but obtained ab initio in a self-consistent scheme. In particular, we calculate charge-transition levels relative to the oxygen-vacancy defect and compare computed optical and thermal excitation/emission energies with the available experimental results, shedding light on the underlying excitation mechanisms and related m…
We use first-principles methods to investigate the effects of collective lattice excitations on the formation of oxygen vacancies in perovskite thin films. We find that phonons play a crucial role on the strain-mediated control of defect chemistry at finite temperatures. In particular, zero-temperature oxygen vacancy formation trends deduced as a function of epitaxial strain can be fully reversed near room temperature. Our first-principles calculations evidence a direct link between the lattice contribution to the oxygen vacancy free energy and the volume expansion that the system undergoes wh…
Oxygen (O2) adsorbed on metal oxides is important in catalytic oxidation reactions, chemical sensing, and photocatalysis. Strong adsorption requires transfer of negative charge from oxygen vacancies (VOs) or dopants, for example. With scanning tunneling microscopy, we observed, transformed, and, in conjunction with theory, identified the nature of O2 molecules on the (101) surface of anatase (titanium oxide, TiO2) doped with niobium. VOs reside exclusively in the bulk, but we pull them to the surface with a strongly negatively charged scanning tunneling microscope tip. O2 adsorbed as superoxo …
Hydroxyapatite (HAp) is a widely used biomaterial for the preparation of bone and dental implants. Despite the relevance of HAp in medicine, exciting applications involving this material as a bio-compatible photocatalyst, depend on how well we understand its fundamental properties. Experimental evidence suggests that oxygen vacancies play a critical role in the production of surface radicals upon exposure of HAp to ultra-violet (UV) light. However, very little is known about the underlying physical and chemical details. We present a hybrid density-functional study of the structural and electro…
Oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to unique conductive, magnetic and even superconductive functionalities they induce. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects that enable unusual symmetries and are relevant for low-energy switching technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of oxygen vacancies has remained elusive. Here, stable individual oxygen vacancie…
Understanding the diffusion of oxygen vacancies in oxides under different external stimuli is crucial for the design of ion-based electronic devices, improve catalytic performance, etc. In this manuscript, using an external electric field produced by an AFM tip, we obtain the room-temperature diffusion coefficient of oxygen-vacancies in thin-films of SrTiO$_3$ under compressive/tensile epitaxial strain. Tensile strain produces a substantial increase of the diffusion coefficient, facilitating the mobility of vacancies through the film. Additionally, the effect of tip bias, pulse time, and tempe…
Luminescence quenching via non-radiative recombination channels limits the efficiency of optical materials such as phosphors and scintillators and therefore has implications for conversion efficiency and device lifetimes. In materials such as Ce-doped yttrium aluminum garnet (YAG:Ce), quenching shows a strong dependence on both temperature and activator concentration, limiting the ability to fabricate high-intensity white-light emitting diodes with high operating temperatures. Here, we reveal by means of first-principles calculations an efficient recombination mechanism in YAG:Ce that involves…
Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combined experimental and density-functional theory studies of Eu0.5Ba0.5TiO3-δ, we demonstrate that oxygen vacancies create Ti3+ 3d1 defect states, mediating the ferromagnetic coupling between the localize…
The introduction of manganite buffer layers, La7/8Sr1/8MnO3 (LSMO) in particular, at the metallic interface between SrTiO3 (STO) and another band insulator suppresses the carrier density of the interfacial two-dimensional electron gas (2DEG) and improves significantly the electron mobility. However, the mechanisms underlying the extreme mobility enhancement remain elusive. Herein, we used 18O isotope exchanged SrTi18O3 as substrates to create 2DEG at room temperature with and without the LSMO buffer layer. By mapping the oxygen profile across the interface between STO18 and disordered LaAlO3 o…
Variety of conducting heterointerfaces have been made between SrTiO3 substrates and thin capping layers of distinctly different oxide materials that can be classified into polar band insulators (e.g. LaAlO3), polar Mott insulators (e.g. LaTiO3), apparently non-polar band insulators (e.g. γ-Al2O3), and amorphous oxides (e.g. amorphous SrTiO3). A fundamental question to ask is if there is a common mechanism that governs interfacial conductivity in all these heterointerfaces. Here, we examined the conductivity of different kinds of heterointerfaces by annealing in oxygen and surface treatment wit…
Spin polarized current is the main ingredient of diluted magnetic oxides due to its potential manipulation in spintronic devices. However, most research has focused on ferromagnetic properties rather than polarization of electric current, because direct measurements were difficult and the origin of spin polarized currents has yet to be fully understood. The method to increase the spin polarized current percentage is beyond practical consideration at the present status. To target this problem, we focus on the role of oxygen vacancies and nano grain size on the spin polarized current, which are …
Supercapacitors have recently gained popularity as possible energy storage systems due to their high cycling ability and increased power density. However, one of the major drawbacks of supercapacitors is that they have a low energy density, which makes them less effective than batteries. Herein, we explore different methods of increasing the supercapacitor performance of the perovskite SrCoO3. We carry out first-principles calculations to systematically study how SrCoO3/graphene interface, oxygen vacancies, and doping improve the performance of strontium cobaltite as an anion-intercalation-typ…
Role of Oxygen Vacancies in Stabilizing the Orthorhombic Phases of Hf0.5Zr0.5O2 Nanoparticles
Frantsevich Institute for Problems in Materials Science of the National Academy of Sciences of Ukraine（乌克兰国家科学院弗伦采维奇材料科学问题研究所）；Institute of Physics of the Czech Academy of Sciences（捷克科学院物理研究所）；Stockholm University, Department of Chemistry（斯德哥尔摩大学化学系）；Ye. O. Paton Institute of Materials Science and Welding, National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”（乌克兰国立技术大学“伊戈尔·西科尔斯基基辅理工学院”叶·奥·帕顿材料科学与焊接研究所）；Oles Honchar Dnipro National University（阿列斯·洪恰尔第聂伯罗国立大学）；Institute of Physics of the National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）；Zone 5 Technologies, Special Projects（Zone 5 Technologies特殊项目部）
Cu$_2$O has appealing properties as an electrode for photo-electrochemical water splitting, yet its practical performance is severely limited by inefficient charge extraction at the interface. Using hybrid DFT calculations, we investigate carrier capture processes by oxygen vacancies (V$_\mathrm{O}$) in the experimentally observed ($\sqrt{3} \times \sqrt{3}$)R30$^{\circ}$ reconstruction of the dominant (111) surface. Our results show that these V$_\mathrm{O}$ are doubly ionized and that associated defects states strongly suppress electron transport. In particular, the excited electronic state …
Epitaxially grown SrTiO$_{3}$ (STO) thin films are material enablers for a number of critical energy-conversion and information-storage technologies like electrochemical electrode coatings, solid oxide fuel cells and random access memories. Oxygen vacancies (${\rm V_{O}}$), on the other hand, are key defects to understand and tailor many of the unique functionalities realized in oxide perovskite thin films. Here, we present a comprehensive and technically sound ab initio description of ${\rm V_{O}}$ in epitaxially strained (001) STO thin films. The novelty of our first-principles study lies in…
Complex oxide functionality, such as ferroelectricity, magnetism or superconductivity is often achieved in epitaxial thin-film geometries. Oxygen vacancies tend to be the dominant type of defect in these materials but a fundamental understanding of their stability and electronic structure has so far mostly been established in the bulk or strained bulk, neglecting interfaces and surfaces present in a thin-film geometry. We investigate here, via density functional theory calculations, oxygen vacancies in the model system of a SrMnO$_3$ (SMO) thin film grown on a SrTiO$_3$ (STO) (001) substrate. …
