Two-dimensional graphene, carbon nanotubes and graphene nanoribbons represent a novel class of low dimensional materials that could serve as building blocks for future carbon-based nanoelectronics. Although these systems share a similar underlying electronic structure, whose exact details depend on confinement effects, crucial differences emerge when disorder comes into play. In this short review, we consider the transport properties of these materials, with particular emphasis to the case of graphene nanoribbons. After summarizing the electronic and transport properties of defect-free systems, we focus on the effects of a model disorder potential (Anderson-type), and illustrate how transport properties are sensitive to the underlying symmetry. We provide analytical expressions for the elastic mean free path of carbon nanotubes and graphene nanoribbons, and discuss the onset of weak and strong localization regimes, which are genuinely dependent on the transport dimensionality. We also consider the effects of edge disorder and roughness for graphene nanoribbons in relation to their armchair or zigzag orientation.
We investigate electron and phonon transport through edge disordered zigzag graphene nanoribbons based on the same methodological tool of nonequilibrium Green functions. We show that edge disorder dramatically reduces phonon thermal transport while being only weakly detrimental to electronic conduction. The behavior of the electronic and phononic elastic mean free paths points to the possibility of realizing an electron-crystal coexisting with a phonon-glass. The calculated thermoelectric figure of merit (ZT) values qualify zigzag graphene nanoribbons as a very promising material for thermoele…
In this work the conducting properties of graphene lattice with a particular concentration of defect (5\% and 10\%) has been studied. The real space block recursion method introduced by Haydock et al. has been used in presence of the random distribution of defects in graphene. This Green function based method is found more powerful than the usual reciprocal based methods which need artificial periodicity. Different resonant states appear because of the presence of topological and local defects are studied within the framework of Green function.
In order to elucidate the presence of non-localized states in doped graphene, an scaling analysis of the wave function moments known as inverse participation ratios is performed. The model used is a tight- binding hamiltonian considering nearest and next-nearest neighbors with random substitutional impurities. Our findings indicate the presence of non-normalizable wave functions that follow a critical (power-law) decay, which are between a metallic and insulating behavior. The power-law exponent distribution is robust against the inclusion of next-nearest neighbors and on growing the system si…
The excitation spectrum and the collective modes of graphene antidot lattices (GALs) are studied in the context of a $π$-band tight-binding model. The dynamical polarizability and dielectric function are calculated within the random phase approximation. The effect of different kinds of disorder, such as geometric and chemical disorder, are included in our calculations. We highlight the main differences of GALs with respect to single-layer graphene (SLG). Our results show that, in addition to the well-understood bulk plasmon in doped samples, inter-band plasmons appear in GALs. We further show …
We experimentally investigate the impact of uncorrelated composite and structural disorder in photonic graphene. We find that in case of structural disorder not only chiral symmetry, but also the vanishing of the density of states at zero energy is preserved. This is in contrast to composite disorder, where chiral symmetry as well as the vanishing of the density of states are destroyed. Our observations are experimentally proven by exciting edge states at the bearded edge in disordered photonic graphene.
We study the local density of states at and around a substituting impurity and use these results to compute current versus bias characteristic curves of Scanning Tunneling Microscopy (STM) experiments done on the surface of graphene. This allow us to detect the presence of substituting impurities on graphene. The case of vacancies is also analyzed. We find that the shape and magnitude of the STM characteristic curves depend on the position of the tip and on the nature of the defect, with the strength of the binging between the impurity and the carbon atoms playing an important role. Also the n…
The magnetic properties of disordered graphene and irradiated graphite are systematically studied using a combination of mean-field Hubbard model and first-principles calculations. By considering large-scale disordered models of graphene, I conclude that only single-atom defects can induce ferromagnetism in graphene-based materials. The preserved stacking order of graphene layers is shown to be another necessary condition for achieving a finite net magnetic moment of irradiated graphite. Ab initio calculations of hydrogen binding and diffusion and of interstitial-vacancy recombination further …
The evolution of electronic wave packets (WPs) through grain boundaries (GBs) of various structures in graphene was investigated by the numerical solution of the time-dependent Schroedinger equation. WPs were injected from a simulated STM tip placed above one of the grains. Electronic structure of the GBs was calculated by ab-initio and tight-binding methods. Two main factors governing the energy dependence of the transport have been identified: the misorientation angle of the two adjacent graphene grains and the atomic structure of the GB. In case of an ordered GB made of a periodic repetitio…
We investigate the size scaling of the conductance of surface disordered graphene sheets of width W and length L. Metallic leads are attached to the sample ends across its width. At E ~ 0, the conductance scales with the system size as follows: i) For constant W/L, it remains constant as size is increased, at a value which depends almost lineally on that ratio; this scaling allows the definition of a conductivity value that results similar to the experimental one. ii) For fixed width, the conductance decreases exponentially with length L, both for ordered and disordered samples. Disorder reduc…
We consider two mechanisms of spin relaxation in disordered graphene. i) Spin relaxation due to curvature spin orbit coupling caused by ripples. ii) Spin relaxation due to the interaction of the electronic spin with localized magnetic moments at the edges. We obtain analytical expressions for the spin relaxation times, tau_SO and tau_J due to both mechanisms and estimate their values for realistic parameters of graphene samples. We obtain that spin relaxation originating from these mechanisms is very weak and spin coherence is expected in disordered graphene up to samples of length L ~ 1 micro…
Graphene nanoribbons provide an opportunity to integrate phase-coherent transport phenomena with nanoelectromechanical systems (NEMS). Due to the strain induced by a deflection in a graphene nanoribbon resonator, coherent electron transport and mechanical deformations couple. As the electrons in graphene have a Fermi wavelength λ~ a_0 = 1.4 Å, this coupling can be used for sensitive displacement detection in both armchair and zigzag graphene nanoribbon NEMS. Here it is shown that for ordered as well as disordered ribbon systems of length L, a strain ε~ (w/L)^2 due to a deflection w leads to a …
We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.
Using the partition-free time-dependent Landauer-B{ü}ttiker formalism for transient current correlations, we study the traversal times taken for electrons to cross graphene nanoribbon (GNR) molecular junctions. We demonstrate electron traversal signatures that vary with disorder and orientation of the GNR. These findings can be related to operational frequencies of GNR-based devices and their consequent rational design.
An accurate simulation of Green's function and self-energy function of non-interacting electrons in disordered graphenes are performed. Fundamental physical quantities such as the elastic relaxation time τe, the phase velocity vp, and the group velocity vg are evaluated. New features around the Dirac point are revealed, showing hints that multi-scattering induced hybridization of Bloch states plays an important role in the vicinity of the Dirac point.
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations in conductance as a function of applied gate voltage or magnetic field were found. As the gate voltage was tuned so that the graphene device was pushed to the charge neutral point, the amplitude of the conductance fluctuation was found to be suppressed quickly from a value consistent with universal conductance fluctuation when the devices were still well with…
An analytic theory of electron transport in disordered graphene in a ballistic geometry is developed. We consider a sample of a large width W and analyze the evolution of the conductance, the shot noise, and the full statistics of the charge transfer with increasing length L, both at the Dirac point and at a finite gate voltage. The transfer matrix approach combined with the disorder perturbation theory and the renormalization group is used. We also discuss the crossover to the diffusive regime and construct a ``phase diagram'' of various transport regimes in graphene.
At low values of external doping graphene displays a wealth of unconventional transport properties. Perhaps most strikingly, it supports a robust 'metallic' regime, with universal conductance of the order of the conductance quantum. We here apply a combination of mean field and bosonization methods to explore the large scale transport properties of the system. We find that, irrespective of the doping level, disordered graphene is subject to common mechanisms of Anderson localization. However, at low doping a number of renormalization mechanisms conspire to protect the conductivity of the syste…
The electrical potential on the surface of $\sim 300$ nm thick SiO$_2$ grown on single crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to $\sim 0.4 $V within regions of $1 μ$m. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.
Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of non-uniform disordered graphene is confirmed. A memory switching effect of 100000% ON/OFF ratio is demonstrated in the t…
The law of reflection states that smooth surfaces reflect waves specularly, thereby acting as a mirror. This law is insensitive to disorder as long as its length scale is smaller than the wavelength. Monolayer graphene exhibits a linear dispersion at low energies and consequently a diverging Fermi wavelength. We present proof that for a disordered graphene boundary, resonant scattering off disordered edge modes results in diffusive electron reflection even when the electron wavelength is much longer than the disorder correlation length. Using numerical quantum transport simulations, we demonst…
The full counting statistics of the charge transport through an undoped graphene sheet in the presence of smooth disorder is studied. At the Dirac point both in clean and diffusive limits, transport properties of a graphene sample are described by the universal Dorokhov distribution of transmission probabilities. In the crossover regime, deviations from universality occur which can be studied analytically both on ballistic and diffusive sides. In the ballistic regime, we use a diagrammatic technique with matrix Green functions. For a diffusive system, the sigma model is applied. Our results ar…
The absorption of heavily doped graphene in the terahertz (THz) and mid-infrared (MIR) spectral regions is considered taking into account both the elastic scattering due to finite-range disorder and the variations of concentration due to long-range disorder. Interplay between intra- and interband transitions is analyzed for the high-frequency regime of response, near the Pauli blocking threshold. The gate voltage and temperature dependencies of the absorption efficiency are calculated. It is demonstrated that for typical parameters, the smearing of the interband absorption edge is determined b…
In two dimensions chaotic level-statistics is expected for massless Dirac fermions in the presence of disorder. For weakly disordered graphene flakes with zigzag edges the obtained level-spacing distribution in the Dirac region is neither chaotic (Wigner) nor localized (Poisson) but similar to that at the critical point of the Anderson metal-insulator transition. The quantum transport in finite graphene can occur via critical edge states as in topological insulators, for strong disorder the Dirac region vanishes and graphene behaves as ordinary Anderson insulator.
The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge contributes strongly to the overall doping of the samples. Furthermore the edge disorder can be found as the main limiting source of the mobility for narrow samples.
Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight bindi…
We study the effect of disordered ripples on the conductivity of monolayer graphene flakes. We calculate the relaxation times and the Boltzmann conductivities associated with two mechanisms. First, we study the conductivity correction due to an external in-plane magnetic field $B_\parallel$. Due to the irregular local curvature found at graphene sheets deposited over a substrate, $B_\parallel$ can be mapped into an effective random magnetic field perpendicular to the graphene surface. Second, we study the electron momentum relaxation due to intrinsic pseudo magnetic fields originated from defo…
We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to localization induced by edge scattering. We find that even for weak edge roughness, conductance steps are suppressed and transport gaps appear. These gaps are approximately inversely proportional to the nanoribbon width. On/off conductance ratios grow exponentially with the nanoribbon length. Our results impose severe limitations to the use of graphene in ballistic nanowires.
We study interacting Dirac quasiparticles in disordered graphene and find that an interplay between the unscreened Coulomb interactions and pseudo-relativistic quasiparticle kinematics can be best revealed in the ballistic regime, whereas in the diffusive limit the behavior is qualitatively (albeit, not quantitatively) similar to that of the ordinary 2DEG with parabolic dispersion. We calculate the quasiparticle width and density of states that can be probed by photoemission, tunneling, and magnetization measurements.
We present numerical studies of conduction in graphene nanoribbons with different types of disorder. We find that even when defect scattering depresses the conductance to values two orders of magnitude lower than 2e^2/h, equally spaced conductance plateaus occur at moderately low temperatures due to enhanced electron backscattering near subband edge energies if bulk vacancies are present in the ribbon. This work accounts quantitatively for the surprising conductance quantization observed by Lin et al. [Phys. Rev. B 78, 161409 (2008)] in ribbons with such low conductances.
A tight-binding model with randomly fluctuating atomic positions is studied to discuss the effect of strong disorder in graphene. We employ a strong-disorder expansion for the transport quantities and find a diffusive behavior, where the conductivity is decreasing with increasing disorder. Surprisingly, the magnetic field drops out of the transport quantities in leading order of this expansion. This signals a strong suppression of magnetotransport effects for sufficiently strong disorder. This result is consistent with recent experimental observations by Morozov {\it et al.}
We theoretically investigate light propagation and Anderson localization in one-dimensional disordered superlattices composed of dielectric stacks with graphene sheets in between. Disorder is introduced either on graphene material parameters ({\it e.g.} Fermi energy) or on the widths of the dielectric stacks. We derive an analytic expression for the localization length $ξ$, and compare it to numerical simulations using transfer matrix technique; a very good agreement is found. We demonstrate that the presence of graphene may strongly attenuate the anomalously delocalised Breswter modes, and is…
We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and addition energies increase with decreasing dot size, as expected, and display a strong correlation, suggesting the same physical origin for both, i.e. disorder-induced localization in presence of a small confinement gap. Gate capacitance measurements indicate that the dot charges are located in the narrow device region as intended. A dominant role of disorder is fu…
We show a dramatic deviation from ergodicity for the conductance fluctuations in graphene. In marked contrast to the ergodicity of dirty metals, fluctuations generated by varying magnetic field are shown to be much smaller than those obtained when sweeping Fermi energy. They also exhibit a strongly anisotropic response to the symmetry-breaking effects of a magnetic field, when applied perpendicular or parallel to the graphene plane. These results reveal a complex picture of quantum interference in graphene, whose description appears more challenging than for conventional mesoscopic systems.
We present a magneto-transport study of graphene samples into which a mild disorder was introduced by exposure to ozone. Unlike the conductivity of pristine graphene, the conductivity of graphene samples exposed to ozone becomes very sensitive to temperature: it decreases by more than 3 orders of magnitude between 100K and 1K. By varying either an external gate voltage or temperature, we continuously tune the transport properties from the weak to the strong localization regime. We show that the transition occurs as the phase coherence length becomes comparable to the localization length. We al…
We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by quantum simulations which consider different types of underlying disorders (smooth edge disorder and long range Coulomb scatters).
Using the recursive Green's function method, we study the problem of electron transport in a disordered single-layer graphene sheet. The conductivity is of order $e^2/h$ and its dependence on the carrier density has a scaling form that is controlled solely by the disorder strength and the ratio between the sample size and the correlation length of the disorder potential. The shot noise Fano factor is shown to have a narrow dip near the neutrality point for weak disorder and to develop a nearly doping independent behavior at strong disorder. Our results are in good qualitative and quantitative …
We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is inversely proportional to the width. In this gap, electron is localized, and charge transport exhibits a transition between simple thermally activated behavior at higher temperatures and a variable range hopping at lower temperatures. By varying the geometric capacitance through the addition of top gates, we find that charging effects constitute a significant port…
The orbital magnetism is studied in graphene monolayer within the effective mass approximation. In models of short-range and long-range disorder, the magnetization is calculated with self-consistent Born approximation. In the zero-field limit, the susceptibility becomes highly diamagnetic around zero energy, while it has a long tail proportional to the inverse of the Fermi energy. We demonstrated how the magnetic oscillation vanishes and converges to the susceptibility, on going from a strong-field regime to zero-field. The behavior at zero energy is shown to be highly singular.
Experiments on hexagonal graphene-like structures using microwave measuring techniques are presented. The lowest transverse-electric resonance of coupled dielectric disks sandwiched between two metallic plates establishes a tight-binding configuration. The nearest-neighbor coupling approximation is investigated in systems with few disks. Taking advantage of the high flexibility of the disks positions, consequences of the disorder introduced in the graphene lattice on the Dirac points are investigated. Using two different types of disks, a boron-nitride-like structure (a hexagonal lattice with …
We report on the formation of critical states in disordered graphene, at the origin of variable and unconventional transport properties in the quantum Hall regime, such as a zero-energy Hall conductance plateau in the absence of an energy bandgap and Landau level degeneracy breaking. By using efficient real-space transport methodologies, we compute both the dissipative and Hall conductivities of large size graphene sheets with random distribution of model single and double vacancies. By analyzing the scaling of transport coefficients with defect density, system size and magnetic length, we elu…
We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to filling factor $ν=2$. In the close vicinity of the charge neutrality point, the system breaks up into co-existing puddles of holes and electrons, leading to a vanishing Hall and finite longitudinal resistance with no hint of divergence at very high magnetic field. Large resistance fluctuations are observed near the Dirac point. They are interpreted a…
Regular nanoscale perforations in graphene (graphene antidot lattices, GAL) are known to lead to a gap in the energy spectrum, thereby paving a possible way towards many applications. This theoretical prediction relies on a perfect placement of identical perforations, a situation not likely to occur in the laboratory. Here, we present a systematic study of the effects of disorder in GALs. We consider both geometric and chemical disorder, and evaluate the density-of-states as well as the optical conductivity of disordered GALs. The theoretical method is based on an efficient algorithm for solvi…
We report on a numerical study of quantum transport in disordered two dimensional graphene and graphene nanoribbons. By using the Kubo and the Landauer approaches, transport length scales in the diffusive (mean free path, charge mobilities) and localized regimes (localization lengths) are computed, assuming a short range disorder (Anderson-type). In agreement with localization scaling theory, the electronic systems are found to undergo a conventional Anderson localization in the zero temperature limit. Localization lengths in weakly disordered ribbons are found to differ by two orders of magni…
The inhomogenous real-space electronic structure of gapless and gapped disordered bilayer graphene is calculated in the presence of quenched charge impurities. For gapped bilayer graphene we find that for current experimental conditions the amplitude of the fluctuations of the screened disorder potential is of the order of (or often larger than) the intrinsic gap $Δ$ induced by the application of a perpendicular electric field. We calculate the crossover chemical potential, $Δ_{\rm cr}$, separating the insulating regime from a percolative regime in which less than half of the area of the bilay…
We study the conductance of disordered graphene superlattices with short-range structural correlations. The system consists of electron- and hole-doped graphenes of various thicknesses, which fluctuate randomly around their mean value. The effect of the randomness on the probability of transmission through the system of various sizes is studied. We show that in a disordered superlattice the quasiparticle that approaches the barrier interface almost perpendicularly transmits through the system. The conductivity of the finite-size system is computed and shown that the conductance vanishes when t…
Conductance fluctuations produced by the presence of disorder in zigzag and armchair graphene nanoribbons are studied. We show that quantum transport in zigzag nanoribbons takes place via edge states which are exponentially localized, as in the standard Anderson localization problem, whereas for armchair nanoribbons the symmetry of the graphene sublattices produces anomalous localization, or delocalization. We show that these two different electron localizations lead to significant differences of the conductance statistics between zigzag and armchair nanoribbons. In particular, armchair nanori…
We report anomalous quantum transport features in bilayer graphene in presence of a random distribution of structural vacancies. By using an efficient real-space Kubo-Greenwood transport methodology, the impact of a varying density of dimer versus non-dimer vacancies is investigated in very large scale disordered models. While non-dimer vacancies are shown to induce localization regimes, dimer vacancies result in an unexpected ballistic regime whose energy window surprisingly enlarges with increasing impurity density. Such counterintuitive phenomenon is explained by the formation of an effecti…
We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs wi…
We report a theoretical low-field magnetotransport study unveiling the effect of pseudospin in realistic models of weakly disordered graphene-based materials. Using an efficient Kubo computational method, and simulating the effect of charges trapped in the oxide, different magnetoconductance fingerprints are numerically obtained in system sizes as large as 0.3 micronmeter squared, containing tens of millions of carbon atoms. In two-dimensional graphene, a strong valley mixing is found to irreparably yield a positive magnetoconductance (weak localization), whereas crossovers from positive to a …
We show that when graphene monolayers are disordered, the conductance exhibits a metallic-to-insulating transition, which opens the door to new electronic devices. The transition can be observed by driving the density or Fermi energy through the mobility edge. At the Dirac point the system is localized, whereas at higher densities there is a region of metallic behavior before the system becomes insulating again at higher densities. The region of metallic behavior depends on the disorder strength and eventually vanishes at high disorder. This result is quite unexpected since in square lattices,…
We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of B-field is investigated up to 10 Tesla. Our results indicate that the charging energy of quantum dot is reduced, and hence the size of the dot increases, at high magnetic field. We provide an explanation of our results using a tight-binding model, which describes the charge redistribution in a disordered graphene quantum dot via the formation of Landau levels a…
In this paper, the average density of states (ADOS) with a binary alloy disorder in disordered graphene systems are calculated based on the recursion method. We observe an obvious resonant peak caused by interactions with surrounding impurities and an anti-resonance dip in ADOS curves near the Dirac point. We also find that the resonance energy (Er) and the dip position are sensitive to the concentration of disorders (x) and their on-site potentials (v). An linear relation, not only holds when the impurity concentration is low but this relation can be further extended to high impurity concentr…
We analyze numerically ensembles of tight-binding Hamiltonians describing highly-symmetric graphene nanoflakes with weak diagonal disorder induced by random electrostatic potential landscapes. When increasing the disorder strength, statistical distribution of energy levels evolves from Poissonian to Wigner, indicating the transition to quantum chaos. Power laws with the universal exponent map the disorder strength in nanoflakes of different sizes, boundaries, and microscopic disorder types onto a single parameter in additive random-matrix model.
Employing the Kernel Polynomial method (KPM), we study the electronic properties of the graphene bilayers in the presence of diagonal disorder, within the tight-binding approximation. The KPM method enables us to calculate local density of states (LDOS) without need to exactly diagonalize the Hamiltonian. We use the geometrical averaging of the LDOS's at different lattice sites as a criterion to distinguish the localized states from extended ones. We find that bilayer graphene undergoes Anderson metal-insulator transition at a critical value of disorder strength.
The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two sublattices or exclusively located on a single sublattice, all conduction regimes are covered from direct tunneling through evanescent modes to mesoscopic transport in bulk disordered graphene. Depending on the transport measurement geometry, defect density, and broken sublattice-symmetry, the Dirac point conductivity is either exceptionally robust against dis…
We develop an Effective Medium Theory to study the electrical transport properties of disordered graphene. The theory includes non-linear screening and exchange-correlation effects allowing us to consider experimentally relevant strengths of the Coulomb interaction. Assuming random Coulomb impurities, we calculate the electrical conductivity as a function of gate voltage describing quantitatively the full cross-over from the fluctuations dominated regime around the Dirac point to the large doping regime at high gate voltages. We find that the conductivity at the Dirac point is strongly affecte…
We present a unified understanding of the experimentally observed minimal dc conductivity in weakly disordered graphene. Firstly, based on linear response theory, we reveal that randomness or disorder inevitably induces momentum dependent corrections to the electron self-energy function, which naturally yields a sample-dependent minimal conductivity. Taking the long-ranged Gaussian and Coulomb potentials as examples, we derive the momentum dependent self-energy function within the Born approximation, and further validate it via numerical simulations using the large-scale Lanczos algorithm. The…
The band structure of graphene ribbons with zigzag edges have two valleys well separated in momentum space, related to the two Dirac points of the graphene spectrum. The propagating modes in each valley contain a single chiral mode originating from a partially flat band at band center. This feature gives rise to a perfectly conducting channel in the disordered system, if the impurity scattering does not connect the two valleys, i.e. for long-range impurity potentials. Ribbons with short-range impurity potentials, however, through inter-valley scattering display ordinary localization behavior. …
