arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0904.3189cond-mat.mes-hallcond-mat.mtrl-sci
收藏

局部无序石墨烯上的扫描隧道显微镜电流

Scanning Tunneling Microscopy currents on locally disordered graphene

N. M. R. Peres, Shan-Wen Tsai, J. E. Santos, R. M. Ribeiro

摘要:

我们研究的局域态密度和周围的替代杂质,并使用这些结果来计算电流与偏压特性曲线的扫描隧道显微镜(STM)的实验在石墨烯表面上完成。这使我们能够检测石墨烯上取代杂质的存在。空缺的情况也进行了分析。我们发现,STM特征曲线的形状和幅度取决于尖端的位置和缺陷的性质,杂质和碳原子之间的结合强度起着重要的作用。尖端的最后一个原子的性质也对特性曲线的形状有影响。

英文摘要:

We study the local density of states at and around a substituting impurity and use these results to compute current versus bias characteristic curves of Scanning Tunneling Microscopy (STM) experiments done on the surface of graphene. This allow us to detect the presence of substituting impurities on graphene. The case of vacancies is also analyzed. We find that the shape and magnitude of the STM characteristic curves depend on the position of the tip and on the nature of the defect, with the strength of the binging between the impurity and the carbon atoms playing an important role. Also the nature of the last atom of the tip has an influence on the shape of the characteristic curve.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑