We show that scanning gate microscopy can be used for probing electron-electron interactions inside a nanostructure. We assume a simple model made of two non-interacting strips attached to an interacting nanosystem. In one of the strips, the electrostatic potential can be locally varied by a charged tip. This change induces corrections upon the nanosystem Hartree-Fock self-energies which enhance the fringes spaced by half the Fermi wavelength in the images giving the quantum conductance as a function of the tip position.
A theory is presented to show how near-field optical microscopy can be used to probe quantum nanostructures. Calculations are done for a quantum dot. Results for different tip/dot configurations and sizes show that near-field excitation can enhance light-hole transitions, excite selection-rule breaking transitions with rates comparable to allowed transitions, and map electron-hole pair wave functions. Conversely, dot response can be used to characterize tip near-fields.
We investigate the effect of a scanning gate tip in the nonlinear quantum transport properties of nanostructures. Generally, we predict that the symmetry of the current-voltage characteristic in reflection-symmetric samples is broken by a tip-induced rectifying conductance correction. Moreover, in the case of a quantum point contact (QPC), the tip-induced rectification term becomes dominant as compared to the change of the linear conductance at large tip-QPC distances. Calculations for a weak tip probing a QPC modeled by an abrupt constriction show that these effects are experimentally observa…
Strain-mediated thin film multiferroics comprising piezoelectric/ferromagnetic heterostructures enable the electrical manipulation of magnetization with much greater efficiency than other methods; however, the investigation of nanostructures fabricated from these materials is limited. Here we characterize ferromagnetic Ni nanostructures grown on a ferroelectric PMN-PT substrate using scanning electron microscopy with polarization analysis (SEMPA) and micromagnetic simulations. The magnetization of the Ni nanostructures can be controlled with a combination of sample geometry and applied electri…
The quantitative characterization of the degree of randomness and aggregation of surface micro and nanostructures is critical to evaluate their effects on targeted functionalities. To this end, the methods of Point Pattern Analysis (PPA), largely used in ecology and medical imaging, seem to provide a powerful toolset. However, the application of these techniques requires the extraction of the point pattern of nanostructures from their microscope images. In this work, we address the issue of the impact that Scanning Electron Microscope (SEM) image processing may have on the fundamental metric o…
The development of functional composite nanomaterials based on graphene and metal nanoparticles (NPs) is currently the subject of intense research interest. In this study we report the preparation of novel type of graphene/Sn and graphene/SnOx (1 < x < 2) hybrid nanostructures and their investigation by scanning probe methods. First, we prepare Sn NPs by evaporating 7 - 8 nm tin on highly oriented pyrolytic graphite substrates. Graphene/Sn nanostructures are obtained by transferring graphene on top of the tin NPs immediately after evaporation. We show by scanning tunnelling microscopy (STM) an…
This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to she…
Local variations in the Seebeck coefficient in low-dimensional materials-based nanostructures and devices play a major role in their thermoelectric performance. Unfortunately, currently most thermoelectric measurements probe the aggregate characteristics of the device as a whole, failing to observe the effects of the local variations and internal structure. Such variations can be caused by local defects, geometry, electrical contacts or interfaces and often substantially influence thermoelectric properties, most profoundly in two-dimensional (2D) materials. Here, we use Scanning Thermal Gate M…
This lecture has been given at the 45th Spring School: Computing Solids: Models, Ab-initio Methods and Supercomputing organized at the Forschungszentrum Jülich. The goal of this manuscript is to review the basics behind the theory accompanying Scanning Tunneling Microscopy.
The Scanning Tunneling Microscope is a powerful tool for studying the electronic properties at the atomic level, however it's relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting on conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies.
This review covers recent experimental progress in probing the electronic properties of graphene and how they are influenced by various substrates, by the presence of a magnetic field and by the proximity to a superconductor. The focus is on results obtained using scanning tunneling microscopy, spectroscopy, transport and magneto-transport techniques.
We consider scanning gate microscopy imaging of the double slit interference for a pair of quantum point contacts (QPCs) defined within the two-dimensional electron gas. The interference is clearly present in the scattered electron wave functions for each of the incident subbands. Nevertheless, we find that the interference is generally missing in the experimentally accessible conductance maps for many incident subbands. We explain this finding on the basis of the Landauer approach. A setup geometry allowing for observation of the double slit interference by the scanning gate microscopy is pro…
The growth and atomic/electronic structure of molecular beam epitaxy (MBE)-grown ErAs nanoparticles and nanorods embedded within a GaAs matrix are examined for the first time via cross-sectional scanning tunneling microscopy (XSTM) and spectroscopy (XSTS). Cross sections enable the interrogation of the internal structure and are well suited for studying embedded nanostructures. The early stages of embedded ErAs nanostructure growth are examined via these techniques and compared with previous cross sectional TEM work. Tunneling spectroscopy I(V) for both ErAs nanoparticles and nanorods was also…
We demonstrate the emergence of classical features in electronic quantum transport for the scanning gate microscopy response in a cavity defined by a quantum point contact and a micron-sized circular reflector. The branches in electronic flow characteristic of a quantum point contact opening on a two-dimensional electron gas with weak disorder are folded by the reflector, yielding a complex spatial pattern. Considering the deflection of classical trajectories by the scanning gate tip allows to establish simple relationships of the scanning pattern, which are in agreement with recent experiment…
A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented and illustrated by experiments performed on current-carrying thin tungsten films. The obtained results demonstrate a sub-millivolt resolution in the measured surface potential. The application of this potentiometry technique to the local sensing of the spin Hall effect is outlined and some experimental results are reported.
We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.
We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique. The STM data show the space and voltage dependent oscillations of the distance between STM tip and the surface which can be explained within one band tight binding Hubbard model. We calculate the STM current using nonequilibrium Keldysh Green function formalism.
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlapping multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can be tuned from the weak to strong coupling regime.
We propose a new method for atomic-scale imaging of spatial current patterns in nanoscopic quantum networks by using scanning tunneling microscopy (STM). By measuring the current flowing from the STM tip into one of the leads attached to the network as a function of tip position, one obtains an atomically resolved spatial image of "current riverbeds" whose spatial structure reflects the coherent flow of electrons out of equilibrium. We show that this method can be successfully applied in variety of network topologies, and is robust against dephasing effects.
We study interfacial water trapped between a sheet of graphene and a muscovite (mica) surface using Raman spectroscopy and ultra-high vacuum scanning tunneling microscopy (UHV-STM) at room temperature. We are able to image the graphene-water interface with atomic resolution, revealing a layered network of water trapped underneath the graphene. We identify water layer numbers with a carbon nanotube height reference. Under normal scanning conditions, the water structures remain stable. However, at greater electron energies, we are able to locally manipulate the water using the STM tip.
We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of "hotspots" where the conductance is strongly affected by the presence of the tip. Our results are well described by a model based on quantum percolation which relates the points of high responsivity to tip-induced scattering between localized Landau levels.
A technique to locally generate mechanical vibrations in freestanding graphene using scanning tunneling microscopy (STM) is presented. The frequency of the mechanical vibrations is tuned over nearly four decades and is centered around 10 Hz. The amplitude of the vibrations also changes over nearly three decades centered on 1 nm. The oscillating motion is generated in two ways: first, by scanning the STM tip on the surface and second, by scanning the bias voltage on the STM tip. The frequency and amplitude of the displaced freestanding graphene is quantitatively transformed to the frequency and…
This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. Based on our own experience, we then discuss in detail some of the limitations of scanning-gate microsco…
The conductance of graphene nanoribbons and nanoconstrictions under the effect of a scanning gate microscopy tip is systematically studied. Using a scattering approach for noninvasive probes, the first- and second-order conductance corrections caused by the tip potential disturbance are expressed explicitly in terms of the scattering states of the unperturbed structure. Numerical calculations confirm the perturbative results, showing that the second-order term prevails in the conductance plateaus, exhibiting a universal scaling law for armchair graphene strips. For stronger tips, at specific p…
Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scann…
Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by…
In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning tunneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-related conductance is observed in negative, zero, and positive band-bending regimes. An Anderson-Hubbard model is used to rationalize our findings, capturing the crossover between the acceptor state being pa…
Graphene flakes are prepared on freshly cleaved mica by exfoliation and studied by scanning tunneling microscopy in ultra high vacuum. On few-layer graphene, a triangular network of partial dislocations separating ABC stacked and ABA stacked graphene was found similar to the networks occasionally visible on freshly cleaved HOPG. We found differences in the electronic structure of ABC and ABA stacked areas by scanning tunneling spectroscopy, i.e., a pronounced peak at 0.25 eV above the Fermi level exclusively in the ABA areas, which is shown to be responsible for the different apparent heights …
We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature ~800 C involved in the growth process poses challenging issues such as surface roughness and integrity of the structure which are addressed in this work. We demonstrate the effectiveness of the gate on the freestanding part of the nanotubes by performing tunneling spectroscopy that reveals Coulomb blockade diamond…
Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron micr…
Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi$_2$Se$_3$ samples by employing Fe-coated W tips as well as non-magnetic W tips. We observe a linear increase in the spin-accumulation as a function of bias current through TI samples.
We investigate the correlations of mutual positions of charge density waves nodes in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and "crystal lattice mismatch" defect were observed. These observations demonstrate the crucial role of Coulomb interaction in formation of charge density waves in InAs nanowires.
Graphene is a truly two-dimensional material with exceptional electronic, mechanical, and optical properties. As such, it consists of surface only and can be probed by the well developed surface-science techniques as, e.g., scanning tunneling microscopy. This method bridges the gap between the surface science community and the electronic device community and might lead to novel combined approaches. Here, I review some of the scanning tunneling microscopy (STM) and spectroscopy (STS) experiments on monolayer graphene samples. I will concentrate on graphene samples deposited on insulating substr…
Atomic scale characterization and manipulation with scanning probe microscopy rely upon the use of an atomically sharp probe. Here we present automated methods based on machine learning to automatically detect and recondition the quality of the probe of a scanning tunneling microscope. As a model system, we employ these techniques on the technologically relevant hydrogen-terminated silicon surface, training the network to recognize abnormalities in the appearance of surface dangling bonds. Of the machine learning methods tested, a convolutional neural network yielded the greatest accuracy, ach…
We present a method capable of calculating elastic scanning tunneling microscopy (STM) currents from localized atomic orbital density functional theory (DFT). To overcome the poor accuracy of the localized orbital description of the wave functions far away from the atoms, we propagate the wave functions, using the total DFT potential. From the propagated wave functions, the Bardeen's perturbative approach provides the tunneling current. To illustrate the method we investigate carbon monoxide adsorbed on a Cu(111) surface and recover the depression/protrusion observed experimentally with normal…
We consider conductance mapping of systems based on the two-dimensional electron gas with scanning gate microscopy using two and more tips of the atomic force microscope. The paper contains results of numerical simulations for a model tip potential with a proposal of a few procedures for extraction and manipulation the ballistic transport properties. In particular, we demonstrate that the multi-tip techniques can be used for readout of the Fermi wavelength, detection of potential defects, filtering specific transverse modes, tuning the system into resonant conditions under which a stable map o…
We developed a process to fabricate nanoscale metallic gate electrodes on scanning probe cantilevers, including on the irregular surface of protruding cantilever tips. The process includes a floating-layer technique to coat the cantilevers in electron-beam resist. We demonstrate gate definition through a lift-off process, as well as through an etching process. The cantilevers maintain a high force sensitivity after undergoing the patterning process. Our method allows the patterning of nanoscale devices on fragile scanning probes, extending their functionality as sensors.
In this work, systematic constant-bias, variable-current scanning tunneling microscopy (STM) measurements and STM simulations from density-functional theory are made, yielding critical insights into the spatial structure of electrons in graphene. A foundational comparison is drawn between graphene and graphite, showing the surface charge density of graphene to be 300 percent that of graphite. Furthermore, simulated STM images reveal that high-current STM better resolves graphenes honeycomb bonding structure because of a retraction which occurs in the topmost dangling bond orbitals.
We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structured electron phases, the probe uses a charged metal tip to induce electrons to tunnel locally, directly below the tip, from a "probe" 2DES to a "subject" 2DES of interest. We test this concept with large-area (non-scanning) tunneling measurements, and predict a high spatial resolution and spectroscopic capability, with minimal influence on the physics in the subject 2DES.
The Field Ion Microscope (FIM) can be used to characterize the atomic configuration of the apex of sharp tips. These tips are well suited for Scanning Probe Microscopy (SPM) since they predetermine SPM resolution and electronic structure for spectroscopy. A protocol is proposed to preserve the atomic structure of the tip apex from etching due to gas impurities during the transfer period from FIM to SPM, and estimations are made regarding the time limitations of such an experiment due to contamination by ultra-high vacuum (UHV) rest gases. While avoiding any current setpoint overshoot to preser…
We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole doped domain close to one of the metal contacts combined with underlying striations in the local NP.
We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance under the influence of a local tip-induced potential, we observe ellipses of enhanced conductance as a function of the tip position. These ellipses allow us to infer the location of the localized states and to study their dependence on the displacement field. For large displacement fields, we observe that localized states tend to occur halfway into the channel…
The conductance change due to a local perturbation in a phase-coherent nanostructure is calculated. The general expressions to first and second order in the perturbation are applied to the scanning gate microscopy of a two-dimensional electron gas containing a quantum point contact. The first-order correction depends on two scattering states with electrons incoming from opposite leads and is suppressed on a conductance plateau; it is significant in the step regions. On the plateaus, the dominant second-order term likewise depends on scattering states incoming from both sides. It is always nega…
A significant part of the optical metamaterial phenomena has the plasmonic nature and their investigation requires very accurate knowledge of the fabricated structures shape with a focus on the periodical features. We describe a consistent approach to the shape reconstruction of the plasmonic nanostructures. This includes vertical and tilted spike AFM probes fabrication, AFM imaging and specific post-processing. We studied a complex-shaped chiral metamaterial and conclude that the described post-processing routine extends possibilities of the existing deconvolution algorithms in the case of pe…
The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution which motivates the use of scanning tunneling microscopy (STM), however, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming. Among them is all-electronic time-resolved STM, which is used in this work to study dopant dynamics in silicon with nanos…
We image the field enhancement at Ag nanostructures using femtosecond laser pulses with a center wavelength of 1.55 micrometer. Imaging is based on non-linear photoemission observed in a photoemission electron microscope (PEEM). The images are directly compared to ultra violet PEEM and scanning electron microscopy (SEM) imaging of the same structures. Further, we have carried out atomic scale scanning tunneling microscopy (STM) on the same type of Ag nanostructures and on the Au substrate. Measuring the photoelectron spectrum from individual Ag particles shows a larger contribution from higher…
Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.
Graphene nanopatterning on highly oriented pyrolytic graphite (HOPG) has previously been shown using both atomic force microscopy (AFM) and scanning tunneling microscopy (STM) based techniques, including folding of intrinsic step edges and electrochemical etching or cutting in graphene layers. We here report development of a new technique, combining electrochemical etching and folding using mechanical STM manipulation. Our technique shows unprecedented control of nanoscale folding of graphene in multiple folding steps and could be a route towards STM study of magic angle graphene with in-situ …
We show scanning probe microscopy measurements of metallic nanocontacts between controlled electromigration cycles. The nanowires used for the thinning process are fabricated by shadow evaporation. The highest resolution obtained using scanning force microscopy is about 3 nm. During the first few electromigration cycles the overall slit structure of the nanocontact is formed. The slit first passes along grain boundaries and then at a later stage vertically splits grains in the course of consuming them. We find that first the whole wire is heated and later during the thinning process as the sli…
We have observed peculiar magnetization textures in Ni$_{80}$Pd$_{20}$ nanostructures using three different imaging techniques: magnetic force microscopy, photoemission electron microscopy under polarized X-ray absorption, and scanning electron microscopy with polarization analysis. The appearances of diamond-like domains with strong lateral charges and of weak stripe structures bring into evidence the presence of both a transverse and a perpendicular anisotropy in these nanostrips. This anisotropy is seen to reinforce as temperature decreases, as testified by a simplified domain structure at …
We describe software that simulates the hardware of a scanning force microscope. The essential feature of the software is its real-time response, which is critical for mimicking the behavior of real scanning probe hardware. The simulator runs on an open-source real time Linux kernel, and can be used to test scanning probe microscope control software as well as theoretical models of different types of scanning probe microscopes. We describe the implementation of a tuning-fork based atomic force microscope and a dc electrostatic force microscope, and present representative images obtained from t…
In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.
We demonstrate high resolution scanning fluorescence resonance energy transfer 10 microscopy between a single nitrogen-vacancy center as donor and graphene as acceptor. 11 Images with few nanometer resolution of single and multilayer graphene structures were 12 attained. An energy transfer efficiency of 30% at distances of 10nm between a single 13 defect and graphene was measured. Further the energy transfer distance dependence of 14 the nitrogen-vacancy center to graphene was measured to show the predicted d-4 15 dependence. Our studies pave the way towards a diamond defect center based versa…
We report the fabrication and the characterization of carbon fibre tips for their use in combined scanning tunnelling and force microscopy based on piezoelectric quartz tuning fork force sensors. We find that the use of carbon fibre tips results in a minimum impact on the dynamics of quartz tuning fork force sensors yielding a high quality factor and consequently a high force gradient sensitivity. This high force sensitivity in combination with high electrical conductivity and oxidation resistance of carbon fibre tips make them very convenient for combined and simultaneous scanning tunnelling …
For tracing the spatiotemporal evolution of electronic systems, we suggest and analyze theoretically a setup that exploits the excellent spatial resolution based on scanning tunneling microscopy techniques combined with the temporal resolution of femtosecond pump-probe photoelectron spectroscopy. As an example, we consider the laser-induced, local vibrational dynamics of a surface-adsorbed molecule. The photoelectrons released by a laser pulse can be collected by the scanning tip and utilized to access the spatiotemporal dynamics. Our proof-of-principle calculations are based on the solution o…
We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 Å in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation…
Epitaxial graphene grown on transition metal surfaces typically exhibits a moiré pattern due to the lattice mismatch between graphene and the underlying metal surface. We use both scanning tunneling microscopy (STM) and atomic force microscopy (AFM) experiments to probe the electronic and topographic contrast of the graphene moiré on the Ir(111) surface. While STM topography is influenced by the local density of states close to the Fermi energy and the local tunneling barrier height, AFM is capable of yielding the 'true' surface topography once the background force arising from the van der Waa…
We analyze the effect of an auxiliary scatterer, such as the potential of a scanning tip, on the conductance of an interacting one-dimensional electron system. We find that the differential conductance for tunneling into the end of a semi-infinite quantum wire reflects the separation of the elementary excitations into spin and charge modes. The separation is revealed as a specific pattern in the dependence of the conductance on bias and on the position of the scatterer.
