A new approach is developed to calculate temperature dependent Seebeck coefficient of heavily doped systems by using Boltzmann transport theory and electron density of states (DOS) obtained from density functional calculations. This approach is applied to heavily doped La:STO with DOS from tetrahedral method and Fermi energy using Fermi integrals. The calculated Seebeck coefficient agrees with the experimental data nearly quantitatively, which proved the accuracy of this approach. The influence of the Fermi energy and asymmetry of DOS on the Seebeck coefficient is analyzed.
High $ZT$ value and large Seebeck coefficient have been reported in the nanostructured Fe-doped Si-Ge alloys. In this work, the large Seebeck coefficient in Fe-doped Si-Ge systems is qualitatively reproduced from the computed electronic density of states, where a hybrid functional, HSE06, is used for an exchange-correlation functional, as well as a special quasi-random structure (SQS) for a disordered atomic configuration. Furthermore, by replacing Fe with other transition metals, such as Mn, Co, Ni, Cu, Zn, and Au, a better dopant that produces a larger Seebeck coefficient in Si-Ge alloy syst…
In this work, we introduce models for deriving lower limits for the key parameters doping efficiency, charge carrier concentration, and charge carrier mobility from conductivity data of doped organic semiconductors. The models are applied to data of thin layers of Fullerene C60 n-doped by four different n-dopants. Combining these findings with thermoelectric Seebeck data, the energetic position of the transport level can be narrowed down and trends for the absolute values are derived.
We study the origin of the large Seebeck coefficient despite the metallic conductivity in the La-doped SrTiO$_3$ and Ba-doped KTaO$_3$. We calculate the band structure of SrTiO$_3$ and KTaO$_3$, from which the Seebeck coefficient is obtained using the Boltzmann's equation. We conclude that the multiplicity of the $t_{2g}$ bands in these materials is one major origin of the good thermoelectric property in that when compared at a fixed total number of doped electrons, the Seebeck coefficient and thus the power factor are larger in multiple band systems than in single band ones because the number…
Graphene halfly doped with H or F possesses local magnetization at the undoped C sites. Thus the Seebeck coefficient is different for each spin channel and its sign also changes depending on the spin polarization. Deposition of doped graphene on the C-face 4H-SiC(0001) with two buffer layers substantially varies the electronic and thermoelectric properties. These properties are efficiently calculated from the semiclassical Boltzmann equations, using the maximally-localized Wannier-functions interpolation of the band structures obtained with the density-functional theory. Our results indicate l…
Based on first-principles calculations, we study the origin of the large thermopower in Ni-doped LaRhO3 and Mg-doped CuRhO2. We calculate the band structure and construct the maximally localized Wannier functions from which a tight binding Hamiltonian is obtained. The Seebeck coefficient is calculated within the Boltzmann's equation approach using this effective Hamiltonian. For LaRhO3, we find that the Seebeck coefficient remains nearly constant within a large hole concentration range, which is consistent with the experimental observation. For CuRhO2, the overall temperature dependence of the…
We present a first-principles study of the magnetotransport phenomena in p-doped diamond via the exact solution of the linearized Boltzmann transport equation, in which the materials' parameters, including electron-phonon and phonon-phonon interactions, are obtained from density functional theory. This approach gives results in very good agreement with experimental data for Hall and drift mobilities, low- and high-field magnetoresistance and Seebeck coefficient, including the phonon-drag effect, in a range of temperatures and carrier concentrations. In particular, our results provide a detaile…
We investigate the thermoelectric propeties of the electron-doped FeAs$_2$ both experimentally and theoretically. Electrons are doped by partially substituting Se for As, which leads to a metallic behavior in the resistivity. A Seebeck coefficient of about $-$200 $μ$V/K is reached at 300 K for 1% doping, and about $-$120 $μ$V/K even at 5% doping. The origin of this large Seebeck coefficient despite the metallic conductivity is analyzed from a band structure point of view. The first-principles band calculation reveals the presence of a pudding-mold type band just above the band gap, somewhat si…
The net entropy change corresponding to the charge carriers in a Ni-doped FeRh bulk polycrystal was experimentally evaluated in a single sample using low temperature heat capacity experiments with applied magnetic field, and using Seebeck effect and Hall coefficient measurements at high temperatures across the first order transition. From the heat capacity data a value for the electronic entropy change \(ΔS_{el}\approx8.9\) J\ kg\(^{-1}\)K\(^{-1}\) was extracted, whereas a value of up to 4 J\ kg\(^{-1}\)K\(^{-1}\) was obtained form the Seebeck coefficient. Additionally, the analysis of the See…
The origin of the recently discovered large thermopower in hole-doped PtSb$_2$ is theoretically analyzed based on a model constructed from first principles band calculation. It is found that the valence band dispersion has an overall flatness combined with some local ups and downs, which gives small Fermi surfaces scattered over the entire Brillouin zone. The Seebeck coefficient is calculated using this model, which gives good agreement with the experiment. We conclude that the good thermoelectric property originates from this "corrugated flat band", where the coexistence of large Seebeck coef…
We present a study of the thermoelectric (Seebeck and Nernst) response in heavily overdoped, non-superconducting La$_{1.67}$Sr$_{0.33}$CuO$_4$. In spite of the electron-like curvature of the Fermi surface, the Seebeck coefficient is positive at low temperatures. Such a feature, previously observed in copper, silver, gold and lithium, is caused by a non-trivial energy dependence of the scattering time. We argue that this feature implies a strong asymmetry between the lifetime of occupied and unoccupied states along the zone diagonals and such an electron-hole asymmetry impedes formation of Coop…
The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase (MOVPE) grown, silicon doped $β$-Ga$_2$O$_3$ thin films was measured relative to aluminum. For room temperature we found the relative Seebeck coefficient of $S_{β\text{-Ga}_2\text{O}_3\text{-Al}}=(-300\pm20)\;μ$V/K. At high bath temperatures $T>240$ K, the scattering is determined by electron-phonon-interaction. At lower bath temperatures between $T=100$ K and $T=300$ K, an increase in the magnitude of the Seebeck coefficient is explained in the frame of Strattons formula. The influence of the diff…
Motivated by a recent observation of good thermoelectric properties in %a %pyrite material PtSb$_2$, we theoretically study related pyrites %materials in an attempt to %find a %better thermoelectric material. %Our aim is to seek for a material which overcomes the suppression of the Seebeck coefficient at high temperatures.% in PtSb$_2$. We find that PtAs$_2$ and PtP$_2$ are good candidates, where a larger band gap than in PtSb$_2$ combined with the overall flatness of the band top gives rise to a monotonically increasing Seebeck coefficient up to high temperatures. This expectation has been co…
We have studied the magneto-optical and magnetotrasnport properties of GaMnAs thin films with high Mn concentrations (x= 12.2 - 21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as 150-190 degree C and by reducing the film thickness to 10 nm in order to prevent precipitation of hexagonal MnAs clusters. Magnetic circular dichroism (MCD) and anomalous Hall effect measurements indicate that these GaMnAs films have the nature of intrinsic ferromagnetic semiconductors with high ferromagnetic transition temperature …
We investigate the spin-dependent electric and thermoelectric properties of ferromagnetic zigzag-graphyne nanoribbons (ZGNRs) using the density-functional theory combined with the non-equilibrium Green's function method. A giant magnetoresistance is obtained in the pristine even-width ZGNRs and can be as high as 10e6 %. However, for the doped systems, a large magnetoresistance behavior may appear in the odd-width ZGNRs rather than the even-width ones. This suggests that the magnetoresistance can be manipulated in a wide range by the dopants on edges of ZGNRs. Another interesting phenomenon is …
We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and tec…
Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial transparency of the samples due to the Moss-Burstein effect. Temporal evolution of the transmitted luminescence shows virtually no effect of surface recombination but is strongly influenced by photon recycling. Temperature dependence of the decay time suggests Auger recombination as the dominant non-radiative process at room temperature. Radiative quantum efficienc…
We report evidence of a non-adiabatic Kohn anomaly in boron-doped diamond, using a joint theoretical and experimental analysis of the phonon dispersion relations. We demonstrate that standard calculations of phonons using density functional perturbation theory are unable to reproduce the dispersion relations of the high-energy phonons measured by high-resolution inelastic x-ray scattering. On the contrary, by taking into account non-adiabatic effects within a many-body field-theoretic framework, we obtain excellent agreement with our experimental data. This result indicates a breakdown of the …
We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 degC. When the thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction (RHEED) pattern and transmission electron microscopy (TEM) show no MnAs clustering, indicating that a homogeneous single crystal with good quality was grown. In the magnetic circular…
We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors PL emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the MQW samples exhibiting 15 nm wells width and 5 nm-thick b…
Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control offer widely tunable optical and electronic properties, doping has proven elusive. This arises both from the synthetic challenge of how to introduce single impurities and from a lack of fundamental understanding of this heavily doped limit under strong quantum confinement. We develop a method to dope semiconductor nanocrystals with metal impurities providin…
While the thermoelectric figure of merit zT above 300K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time, success in first-principles computation of the phonon drag effect - a coupling phenomenon between electrons and non-equilibrium phonons - in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies th…
We present high-temperature ferromagnetism and large magnetic anisotropy in heavily Fe-doped n-type ferromagnetic semiconductor (In1-x,Fex)Sb (x = 20 - 35%) thin films grown by low-temperature molecular beam epitaxy. The (In1-x,Fex)Sb thin films with x = 20 - 35% maintain the zinc-blende crystal and band structure with single-phase ferromagnetism. The Curie temperature (TC) of (In1-x,Fex)Sb reaches 390 K at x = 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based ferromagnetic semiconductors. Moreover, large coercive force (HC = 160 Oe) …
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron anni…
Isotopic substitution of boron and carbon is applied for the identification of the vibrational modes of heavily boron-doped diamond synthesized by high-pressure high-temperature technique. None of the bands in the Raman spectra are shifting upon ^{10}B-substitution, whereas shifts to lower frequency are observed for all bands upon ^{13}C-substitution as compared to a sample with natural isotope abundancies. These isotopic substitution experiments exclude the hypothesis of boron dimer related normal modes and strongly support the assignment of the previously studied "500 cm^{-1}" and "1230 cm^{…
Upon chemical substitution of oxygen with fluor, LaMnAsO has been electron-doped in experiments, resulting in samples with remarkably high Seebeck coefficients of around -300$μVK^{-1}$ at room temperature and 3% doping. Within the framework of density functional theory plus dynamical mean-field theory we are not only able to reproduce these experimental observations, but can also provide a thorough investigation of the underlying mechanisms. By considering electronic correlations in the half-filled Mn-3d shells, we trace the high Seebeck coefficient back to an asymmetry in the spectral functio…
To clarify the origin of the nontrivial thermoelectric properties observed in the delafossite oxide CuRhO$_2$ polycrystals, we have performed the systematic transport measurements on the single-crystalline CuRhO$_2$ samples. In the parent compound, we find a pronounced peak structure due to a phonon-drag effect in the temperature dependence of the Seebeck coefficient, which is also confirmed by the size effect experiments. In the Mg-substituted crystals, in contrast to the results of the polycrystals, both the resistivity and the Seebeck coefficient decrease with increasing Mg content $y$. In …
Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a strategic material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural …
We present a general coupled electron-phonon Boltzmann transport equations (BTEs) scheme designed to capture the mutual drag of the two interacting systems. By combining density functional theory based first principles calculations of anharmonic phonon-phonon interactions with physical models of electron-phonon interactions, we apply our implementation of the coupled BTEs to calculate the thermal conductivity, mobility, Seebeck and Peltier coefficients of n-doped gallium arsenide. The measured low temperature enhancement in the Seebeck coefficient is captured using the solution of the fully co…
We study the Seebeck effect in the three-dimensional Dirac electron system based on the linear response theory with Luttinger's gravitational potential. The Seebeck coefficient $S$ is defined by $S = L_{12} / L_{11} T$, where $T$ is the temperature, and $L_{11}$ and $L_{12}$ are the longitudinal response coefficients of the charge current to the electric field and to the temperature gradient, respectively; $L_{11}$ is the electric conductivity and $L_{12}$ is the thermo-electric conductivity. We consider randomly-distributed impurity potentials as the source of the momentum relaxation of elect…
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100cm^2/Vs p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (<<1cm^2/Vs) hole mobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higher hole mobility, lacking a well-established understanding of its hole transport properties. Moreover, growth of SnO is complicated by i…
We examine how the photo-induced carriers contribute the thermoelectric transport, i.e. the nature of the photo-Seebeck effect, in the wide-gap oxide semiconductor ZnO for the first time. We measure the electrical conductivity and the Seebeck coefficient with illuminating light. The light illumination considerably changes the Seebeck coefficient as well as the conductivity, which is sensitive to the photon energy of the illuminated light. By using a simple parallel-circuit model, we evaluate the contributions of the photo-induced carriers to the conductivity and the Seebeck coefficient, whose …
Heavily-doped semiconductor nanocrystals characterized by a tunable plasmonic band have been gaining increasing attention recently. Herein, we introduce this type of materials focusing on their structural and photo physical properties. Beside their continuous-wave plasmonic response, depicted both theoretically and experimentally, we also review recent results on their transient, ultrafast response. This was successfully interpreted by adapting models of the ultrafast response of gold nanoparticles.
The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1% Ho increases the maximum ZT to 0.31 at 221 K and the 3% doped sample suppresses the maximum ZT = 0.24 at a temperatur…
Sr$_{2}$FeMoO$_6$ is a double perovskite compound, known for its high temperature behavior. Combining different magnetic and spectroscopic tools, we show that this compound can be driven to rare example of antiferromagnetic metallic state through heavy electron doping. Considering synthesis of Sr$_{2-x}$La$_x$FeMoO$_6$ (1.0 $\le{x}\le$ 1.5) compounds, we find compelling evidences of antiferromagnetic metallic ground state for $x\ge$1.4. The local structural study on these compounds reveal unusual atomic scale phase distribution in terms of La, Fe and Sr, Mo-rich regions driven by strong La-O c…
Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric double-layer field-effect transistors (FET). However, for the case of single layer NbSe$_2$, FET doping is limited to $\approx 1\times 10^{14}$ cm$^{-2}$, while a somewhat larger charge injection can be obtained via deposition of K atoms. Here, by performing ARPES, STM, quasiparticle interference measurements, and first principles calculations we show that a misfit co…
In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundreds meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such he…
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current-voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On the other hand, the reverse bias characteristics could not be described by a unique mechanism. In fact, under moderate reverse bias, implantation-induced damage is responsible for the temperature increa…
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously reported 0.86 (E2) and 1.03 eV (E3) levels. For 10^18 cm-3 Zr-doped Ga2O3, signatures at 0.30 eV (E15) and 0.71 eV (E16) are present. For the highest Zr doping of 5*10^18 cm-3, we observe only one signa…
We analyze the cross-plane miniband transport in n-doped [001] silicon (Si)/germanium (Ge) superlattices using an effective mass approximation (EMA) approach that correctly accounts for the indirect nature of the Si and Ge band gaps. Direct-gap based EMA has been employed so far to investigate the electronic properties of these superlattices, that does not accurately predict transport properties. We use the Boltzmann transport equation framework in combination with the EMA band analysis, and predict that significant improvement of the thermopower of n-doped Si/Ge superlattices can be achieved …
We propose a new method for accurately calculating electrical transport properties of a lightly-doped thermoelectric material from density functional theory (DFT) calculations, based on experimental data and density functional theory results for the corresponding undoped material. We employ this approach because hybrid DFT calculations are prohibitive for the large supercells required to model low dopant concentrations comparable to those achieved experimentally for high-performing thermoelectrics. Using zinc antimonide as our base material, we find that the electrical transport properties cal…
The missing hole packets near the Brillouin zone center render unique electronic structures to the heavily electron doped FeSe-based superconductors with Tc above 40 K. It challenges the existing scenario accounting for the nature of superconductivity in the iron-based family. Yet, one hurdle that has to be overcome is the materials complexity in the rather limited number of compounds. Here we report the growth of heavily electron doped Li-NH3 intercalated FeSe single crystals that are free of such complexities and allow access to the intrinsic superconducting properties. Our results show extr…
We have prepared polycrystalline samples of (Sr$_{1-x}$La$_x$)$_2$ErRuO$_6$ and (Sr$_{1-x}$La$_x$)$_2$YRuO$_6$, and have measured the resistivity, Seebeck coefficient, thermal conductivity, susceptibility and x-ray absorption in order to evaluate the electronic states and thermoelectric properties of the doped double-perovskite ruthenates. We have observed a large Seebeck coefficient of -160 $μ$V/K and a low thermal conductivity of 7 mW/cmK for $x$=0.1 at 800 K in air. These two values are suitable for efficient oxide thermoelectrics, although the resistivity is still as high as 1 $Ω$cm. From …
Large-volume deployment of Si-based Seebeck generators can be foreseen only if polycrystalline rather than single crystalline materials can be actually used. The aim of this study was therefore to verify whether polycrystalline Si films deposited on top of a SiO$_2$ insulating layer can develop interesting thermoelectric power factors. We prepared 450-nm thick heavily boron doped polysilicon layers, setting the initial boron content in the film to be in excess of the boron solubility in polycrystalline silicon at 1000 °C. Isochronal thermal annealings were then used to modify the B$_{Si}$ cont…
Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in enhancing the ZT of n-type half-Heusler alloys based on Hf0.6Zr0.4NiSn0.995Sb0.005. The V doping was fou…
We present an experimental investigation of heavy doping-induced many-body effects such as band gap narrowing(BGN) and Fermi edge singularity(FES) in Al$_x$Ga$_{1-x}$As using photoluminescence(PL) spectroscopy. The band-to-band transition energy shifts to lower energies and FES-like feature in PL spectra grows with increasing electron concentration. We show that FES-like feature is a nonmonotonic function of temperature and excitation intensity. Our data lead us to suggest that a small concentration of nonequilibrated holes is required to enhance the FES-like feature in the PL spectra.
Heavily doped semiconductors are by far the most studied class of materials for thermoelectric applications in the past several decades. They have Seebeck coefficient values which are 2-3 orders of magnitude higher than metals, making them attractive for thermoelectric applications. Semimetals generally demonstrate smaller Seebeck coefficient values due to lack of an energy bandgap. However, when there is a large asymmetry in their electron and hole effective masses, semimetals could have large Seebeck coefficient values. In this work, we study the band structure of a class of 18 semimetals us…
Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon doping, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf k}-splitting originates from the large spin-orbit coupling and results in a Rashba-type behavior, unequivocally demonstrated here via the spin analysis. The spin helicities of the lowest laying Rashba doublet and the adjacent topological surface state alternate in a left-right-left sequence. This spin configuration sets constraints to inter-band scattering ch…
We report switching of magnetic anisotropy (MA) from in-plane to perpendicular with increasing the thickness d of a (001)-oriented ferromagnetic-semiconductor (FMS) (Ga0.7,Fe0.3)Sb layer with a high Curie temperature (Tc > 320 K), using ferromagnetic resonance at room temperature. We show that the total MA energy (E) along the [001] direction changes its sign from positive (in-plane) to negative (perpendicular) with increasing d above an effective critical value \mathrm{d}_\mathrm{C}^\mathrm{*}\ ~ 42 nm. We reveal that (Ga,Fe)Sb has two-fold symmetry in the film plane. Meanwhile, in the plane …
Recent experiments reported an unusual nematic behavior of heavily hole-doped pnictides $A$Fe$_{2}$As$_{2}$, with alkali $A$ = Rb, Cs. In contrast to the $B_{2g}$ nematic order of the parent $Ae$Fe$_{2}$As$_{2}$ compounds (with alkaline earth $Ae$ = Sr, Ba), characterized by unequal nearest-neighbor Fe-Fe bonds, in the hole-doped systems nematic order is observed in the $B_{1g}$ channel, characterized by unequal next-nearest-neighbor Fe-Fe (diagonal Fe-As-Fe) bonds. In this work, using density functional theory, we attribute this behavior to the evolution of the magnetic ground state along the…
The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the donor and acceptor type structural defects >10^{18} cm^{-3}. Unless Pb-doped, the InSb films do not show any measurable or show very small WL effect at 4.2 K. The Pb-doping to the concentration of the order of 10^{18} cm^{-3} leads to pronounced WL effects below 7 K. In particular, a clearly manifested SO scattering is observed. From the comparison of the e…
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering spectrometry, and the Ge concentration was increased up to [Ge] = 1E21 cm-3. Even at these high doping levels Ge does not induce any structural degradation in AlxGa1-xN layers with x below 0.15. However, for higher Al compositions, clustering of Ge forming crystallites were observed. Hall effect measurements show a gradual decrease of the carrier …
Steady-state access to intraband transitions in colloidal quantum dots (CQDs), via heavy doping, allows exploiting the electromagnetic spectrum at energies below the band gap. CQD intraband optoelectronics opens up a new path to cheap mid- and long-wavelength infrared photodetectors and light-emitting devices, which today employ mostly epitaxial materials. As a recent field of experimental research, thorough studies of the basic properties of intraband transitions in CQDs are still lacking. In this work, we investigate the size and temperature dependence of the intraband transition in heavily …
High-quality thermoelectric LaxSr1-xTiO3 (LSTO) layers (here with x = 0.2), with thicknesses ranging from 20 nm to 700 nm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 x 10-4 ohm.cm at room temperature), one order of magnitude lower than commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectri…
Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, first principle calculations, pump-probe spectroscopy and dc transport measurements to determine the relation between plasma edge and carrier density and to quantify mid-infrared plasmon losses. We dem…
The record-breaking thermoelectric performance of tin selenide (SnSe) has motivated the investigation of analogue compounds with the same structure. A promising candidate that emerged recently is germanium selenide (GeSe). Here, using extensive first-principles calculations of the hole-phonon and hole-impurity scattering, we investigate the thermoelectric transport properties of the orthorhombic phase of p-doped GeSe. We predict outstanding thermoelectric performance for GeSe over a broad range of temperatures due to its high Seebeck coefficients, extremely low Lorenz numbers, ultralow total t…
Kondo insulator FeSb$_2$ with large Seebeck coefficient would have potential in thermoelectric applications in cryogenic temperature range if it had not been for large thermal conductivity $κ$. Here we studied the influence of different chemical substitutions at Fe and Sb site on thermal conductivity and thermoelectric effect in high quality single crystals. At $5\%$ of Te doping at Sb site thermal conductivity is suppressed from $\sim 250$ W/Km in undoped sample to about 8 W/Km. However, Cr and Co doping at Fe site suppresses thermal conductivity more slowly than Te doping, and even at 20$\%$…
We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single crystalline silicon membranes shaped into heater/absorber area and narrow n- and p-doped beams, which operate as the thermocouple. The electro-thermal characterization of the devices reveal noise equivalent power of 13 pW/rtHz and thermal time constant of 2.5 ms. The high sensitivity of the devices is due to the high Seebeck coefficient of 0.39 mV/K and reducti…
