单晶质量热电La掺杂SrTiO3外延层：从纳米到微米及镶嵌效应
Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nanometer to micrometer and mosaicity effects
摘要：
高品质的热电LaxSr 1-xTiO 3（LSTO）层（这里与x = 0.2），厚度范围从20 nm到700 nm，已外延生长在SrTiO 3（001）衬底上的增强型固体源氧化物分子束外延。所有的膜都是原子级平坦的（均方根粗糙度< 0.2 nm），具有低镶嵌性（<0.1°），并且呈现非常低的电阻率（在室温下<5 x 10-4 ohm.cm），比商业Nb掺杂的SrTiO 3单晶衬底低一个数量级。在此厚度范围内的运输性能的守恒已被证实的热电测量，其中塞贝克系数约-60 microV/K已被发现的所有膜，因此。最后，给出了镶嵌性和（热）电性能之间的相关性。这些功能性LSTO膜可以集成在光微电子器件中的Si上作为透明导体、热电元件或非易失性存储器结构。
英文摘要：
High-quality thermoelectric LaxSr1-xTiO3 (LSTO) layers (here with x = 0.2), with thicknesses ranging from 20 nm to 700 nm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 x 10-4 ohm.cm at room temperature), one order of magnitude lower than commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of around -60 microV/K have been found for all films, accordingly. Finally, a correlation is given between the mosaicity and the (thermo)electric properties. These functional LSTO films can be integrated on Si in opto-microelectronic devices as transparent conductor, thermoelectric elements or in non-volatile memory structures.
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