Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a strategic material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).
We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts. We observe a large enhancement of both signals below the spin-spiral (Ts = 28 K) and the spin lock-in transitions (T_{lock_in} = 14 K). The SMR and SSE response in the spin lock-in phase are one order of magnitude larger than those observed at the ferrimagnetic transition temperature (Tc = 94 K), which indicates that the interaction between spins at the Pt|CCO interface is more efficient in the non-collinear magnetic state below Ts and T_{lock-in}. …
We report on spin Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in single crystal of the rare-earth antiferromagnet DyFeO$_{3}$ with a thin Pt film contact. The angular shape and symmetry of the SMR at elevated temperatures reflect the antiferromagnetic order of the Fe$^{3+}$ moments as governed by the Zeeman energy, the magnetocrystalline anisotropy and the Dzyaloshinskii-Moriya interaction. We interpret the observed linear dependence of the signal on the magnetic field strength as evidence for field-induced order of the Dy$^{3+}$ moments up to room temperature. At and below the …
We report a systematic study on the thermoelectric performance of spin Seebeck devices based on Fe3O4/Pt junction systems. We explore two types of device geometries: a spin Hall thermopile and spin Seebeck multilayer structures. The spin Hall thermopile increases the sensitivity of the spin Seebeck effect, while the increase in the sample internal resistance has a detrimental effect on the output power. We found that the spin Seebeck multilayers can overcome this limitation since the multilayers exhibit the enhancement of the thermoelectric voltage and the reduction of the internal resistance …
We phenomenologically calculate the performance of the recently-observed Seebeck-driven transverse thermoelectric generation (STTG) for various systems in terms of the thermopower, power factor, and figure of merit to demonstrate the usefulness of STTG. The STTG system consists of a closed circuit comprising thermoelectric and magnetic materials which exhibit the Seebeck and anomalous Hall effects, respectively. When a temperature gradient is applied to the hybrid system, the Seebeck effect in the thermoelectric material layer generates a longitudinal charge current in the closed circuit and t…
The longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe$_3$O$_4$ with the ferromagnetic metal Co$_{0.2}$Fe$_{0.6}$B$_{0.2}$ (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe$_3$O$_4$ into CoFeB. It is shown, that in a single ferromagnetic metal the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fi…
The acute magnetic proximity effects in Pt/YIG compromise the suitability of Pt as a spin current detector. We show that Au/YIG, with no anomalous Hall effect and a negligible magnetoresistance, allows the measurements of the intrinsic spin Seebeck effect with a magnitude much smaller than that in Pt/YIG. The experiment results are consistent with the spin-polarized density-functional calculations for Pt with a sizable and Au with a negligible magnetic moment near the interface with YIG.
Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here systematic measurements of longitudinal electrical transport, Shubnikov-de-Haas (SdH) quantum oscillations, Hall coefficient (R_H^2D), and Seebeck coefficient as a function of film thickness (d) and temperature using high quality Bi2-xSbxTe3-ySey (BSTS) single crystal thin films grown by physical vapor-phase deposition. The thickness dependence of sheet condu…
The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase (MOVPE) grown, silicon doped $β$-Ga$_2$O$_3$ thin films was measured relative to aluminum. For room temperature we found the relative Seebeck coefficient of $S_{β\text{-Ga}_2\text{O}_3\text{-Al}}=(-300\pm20)\;μ$V/K. At high bath temperatures $T>240$ K, the scattering is determined by electron-phonon-interaction. At lower bath temperatures between $T=100$ K and $T=300$ K, an increase in the magnitude of the Seebeck coefficient is explained in the frame of Strattons formula. The influence of the diff…
We investigate the inverse spin Hall voltage of a 10nm thin Pt strip deposited on the magnetic insulators Y3Fe5O12 (YIG) and NiFe2O4 (NFO) with a temperature gradient in the film plane. We observe characteristics typical of the spin Seebeck effect, although we do not observe a change of sign of the voltage at the Pt strip when it is moved from hot to cold side, which is believed to be the most striking feature of the transverse spin Seebeck effect. Therefore, we relate the observed voltages to the longitudinal spin Seebeck effect generated by a parasitic out-of-plane temperature gradient, whic…
Temperature-dependent spin-Seebeck effect data on Pt|YIG (Y$_3$Fe$_5$O$_{12}$)|GGG (Gd$_3$Ga$_5$O$_{12}$) are reported for YIG films of various thicknesses. The effect is reported as a spin-Seebeck resistivity (SSR), the inverse spin-Hall field divided by the heat flux, to circumvent uncertainties about temperature gradients inside the films. The SSR is a non-monotonic function of YIG thickness. A diffusive model for magnon transport demonstrates how these data give evidence for the existence of two distinct length scales in thermal spin transport, a spin diffusion length and a magnon energy r…
We investigate dissipationless magneto-Seebeck effect in three-dimensional Dirac/Weyl semimetal. The Hall resistivity $ρ_{yx}$ and thermoelectric Hall coefficient $α_{xy}$ exhibit plateaus at the quantum limit, where electrons occupy only the zeroth Landau level. In this condition, quantum oscillation in the Seebeck coefficient $S_{xx}\approx ρ_{yx}α_{xy} $ is suppressed, and the massless fermions are transformed into a Fermi liquid system. We show that the Seebeck coefficient at the quantum limit is expressed by the harmonic sum of Fermi wavelength and thermal de Broglie wavelength scaled by …
The spin-Seebeck effect was recently discovered in a metallic ferromagnet and consists of a thermally generated spin distribution that is electrically measured utilizing the inverse spin Hall effect. Here this effect is reproduced experimentally in a ferromagnetic semiconductor, GaMnAs, which allows for flexible design of the magnetization directions, a larger spin polarization, and measurements across the magnetic phase transition. The spin-Seebeck effect in GaMnAs is observed even in the absence of longitudinal charge transport. The spatial distribution of spin-currents is maintained across …
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics in both bands yielding donor state energies of ~ 33.7 and ~ 45.6 meV. The former is consistent with the donor energy of Si in \b{eta}-Ga2O3 whereas the latter suggests a residual donor state, likely as…
We analyze the effect of low dimensionality on the electrical conductivity (σ) and Seebeck coefficient (S) in ultra-narrow Si nanowires (NWs) by employing atomistic considerations for the electronic structures and linearized Boltzmann transport theory. We show that changes in the geometrical features of the NWs such as diameter and orientation, mostly affect σ and S in two ways: i) the distance of the band edges from the Fermi level (ηF) changes, and ii) quantum confinement in some cases strongly affect the effective mass of the subbands, which influences the conductivity of the NWs and ηF. Ch…
We perform a quantitative, comparative study of the spin pumping, spin Seebeck and spin Hall magnetoresistance effects, all detected via the inverse spin Hall effect in a series of over 20 yttrium iron garnet/Pt samples. Our experimental results fully support present, exclusively spin current-based, theoretical models using a single set of plausible parameters for spin mixing conductance, spin Hall angle and spin diffusion length. Our findings establish the purely spintronic nature of the aforementioned effects and provide a quantitative description in particular of the spin Seebeck effect.
The spin Seebeck effect is a spin-motive force generated by a temperature gradient in a ferromagnet that can be detected via normal metal contacts through the inverse spin Hall effect [K. Uchida {\it et al.}, Nature {\bf 455}, 778-781 (2008)]. We explain this effect by spin pumping at the contact that is proportional to the spin-mixing conductance of the interface, the inverse of a temperature-dependent magnetic coherence volume, and the difference between the magnon temperature in the ferromagnet and the electron temperature in the normal metal [D. J. Sanders and D. Walton, Phys. Rev. B {\bf …
The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. …
We evaluated the thermoelectric properties of longitudinal spin Seebeck devices by using ten different transition metals (TMs). Both the intensity and sign of spin Seebeck coefficients were noticeably dependent on the degree of the inverse spin Hall effect and the resistivity of each TM film. Spin dependent behaviors were also observed under ferromagnetic resonance. These results indicate that the output of the spin Seebeck devices originates in the spin current.
In this work we investigated thin films of the ferrimagnetic insulators YIG and NFO capped with thin Pt layers in terms of the longitudinal spin Seebeck effect (LSSE). The electric response detected in the Pt layer under an out-of-plane temperature gradient can be interpreted as a pure spin current converted into a charge current via the inverse spin Hall effect. Typically, the transverse voltage is the quantity investigated in LSSE measurements (in the range of μV). Here, we present the directly detected DC current (in the range of nA) as an alternative quantity. Furthermore, we investigate t…
The spin Seebeck effect refers to the generation of a spin voltage caused by a temperature gradient in a ferromagnet, which enables the thermal injection of spin currents from the ferromagnet into an attached nonmagnetic metal over a macroscopic scale of several millimeters. The inverse spin Hall effect converts the injected spin current into a transverse charge voltage, thereby producing electromotive force as in the conventional charge Seebeck device. Recent theoretical and experimental efforts have shown that the magnon and phonon degrees of freedom play crucial roles in the spin Seebeck ef…
Transverse thermoelectric devices produce electric fields perpendicular to an incident heat flux. Classically, this process is driven by the Nernst effect in bulk solids, wherein a magnetic field generates a Lorentz force on thermally excited electrons. The spin Seebeck effect (SSE) also produces magnetization-dependent transverse electric fields. SSE is traditionally observed in thin metallic films deposited on electrically insulating ferromagnets, but the films' high resistance limits thermoelectric conversion efficiency. Combining Nernst and SSE in bulk materials would enable devices with s…
We demonstrate an instrument for time-resolved magnetic imaging that is highly sensitive to the in-plane magnetization state and dynamics of thin-film bilayers of yttrium iron garnet (Y3Fe5O12,YIG)/Pt: the time-resolved longitudinal spin Seebeck (TRLSSE) effect microscope. We detect the local, in-plane magnetic orientation within the YIG by focusing a picosecond laser to generate thermally-driven spin current from the YIG into the Pt by the spin Seebeck effect, and then use the inverse spin Hall effect in the Pt to transduce this spin current to an output voltage. To establish the time resolut…
Spintronic phenomena to date have been established in magnets with collinear moments, where the spin injection through the spin Seebeck effect (SSE) is always along the out-of-plane direction. Here, we report the observation of a vector SSE in a noncollinear antiferromagnet (AF) LuFeO$_3$, where temperature gradient along the out-of-plane and also the in-plane directions can both inject a pure spin current and generate a voltage in the heavy metal via the inverse spin Hall effect (ISHE). We show that the thermovoltages are due to the magnetization from canted spins in LuFeO$_3$. Furthermore, i…
We demonstrate the modulation of spin Seebeck effect (SSE) by hydrogenation in Pd/YIG bilayers. In the presence of 3% hydrogen gas, SSE voltage decreases by more than 50% from the magnitude observed in pure Ar gas. The modulation of the SSE voltage is reversible, but the recovery of the SSE voltage to the prehydrogenation value takes a few days because of a long time constant of hydrogen desorption. We also demonstrate that the spin Hall magnetoresistance of the identical sample reduces significantly with hydrogen exposure, supporting that the observed modulation of spin current signals origin…
We derive expressions for the efficiency and figure of merit of two spin caloritronic devices based on the spin Seebeck effect (SSE), i.e., the generation of spin currents by a temperature gradient. The inverse spin Hall effect is conventionally used to detect the SSE and offers advantages for large area applications. We also propose a device that converts spin current into electric one by means of a spin-valve detector, which scales favorably to small sizes and approaches a figure of merit of 0.5 at room temperature.
The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be realized. The thermoelectricity in FM/non-magnet (NM) heterostructures using an optical heating source is studied as a function of NM materials and a number of multilayers. It is observed that the overall thermoelectric signal in those structures which is contributed by spin Seebeck effect and anomalous Nernst effect (ANE) is enhanced by a proper selection …
For prospective spintronics devices based on the propagation of pure spin currents, antiferromagnets are an interesting class of materials that potentially entail a number of advantages as compared to ferromagnets. Here, we present a detailed theoretical study of magnonic spin current transport in ferromagnetic-antiferromagnetic multilayers by using atomistic spin dynamics simulations. The relevant length scales of magnonic spin transport in antiferromagnets are determined. We demonstrate the transfer of angular momentum from a ferromagnet into an antiferromagnet due to the excitation of only …
Recently, Seebeck coefficients of ferromagnetic conductors are found to be spin-dependent. However straightforward method of accurately determining its spin polarization is still to be developed. Here, we have derived a linear dependence of anomalous Nernst coefficient on anomalous Hall angle with scaling factor related to spin polarization of Seebeck coefficient, which has been experimentally verified in [Co/Pt]n superlattices. Based on the dependence, we have also evaluated spin polarization of Seebeck coefficient of some ferromagnetic conductors. Besides, we have also found a new mechanism …
Improving the thermoelectric figure of merit zT is one of the greatest challenges in material science. Recent discovery of topological insulators (TIs) offers new promise in this prospect. In this work, we demonstrate theoretically that zT is strongly size dependent in TI, and the size parameter can be tuned to enhance zT to be significantly greater than 1. Furthermore, we show that the life time of the edge states in TI is strongly energy dependent, leading to large and anomalous Seebeck effects with an opposite sign to the Hall effect. These striking properties make TIs the promising materia…
We present a first-principles study of the magnetotransport phenomena in p-doped diamond via the exact solution of the linearized Boltzmann transport equation, in which the materials' parameters, including electron-phonon and phonon-phonon interactions, are obtained from density functional theory. This approach gives results in very good agreement with experimental data for Hall and drift mobilities, low- and high-field magnetoresistance and Seebeck coefficient, including the phonon-drag effect, in a range of temperatures and carrier concentrations. In particular, our results provide a detaile…
We examined the electrical transport properties of densified LaOBiS2-xSex, which constitutes a new family of thermoelectric materials. The power factor increased with increasing concentration of Se, i.e., Se substitution led to an enhanced electrical conductivity, without suppression of the Seebeck coefficient. Hall measurements indicated that the low electrical resistivity resulted from increases in the carrier mobility, and the decrease in carrier concentration led to large absolute values of the Seebeck coefficient of the system.
We report temperature-dependent spin-Seebeck measurements on Pt/YIG bilayers and Pt/NiO/YIG trilayers, where YIG (Yttrium iron garnet, Y$_3$Fe$_5$O$_{12}$) is an insulating ferrimagnet and NiO is an antiferromagnet at low temperatures. The thickness of the NiO layer is varied from 0 to 10 nm. In the Pt/YIG bilayers, the temperature gradient applied to the YIG stimulates dynamic spin injection into the Pt, which generates an inverse spin Hall voltage in the Pt. The presence of a NiO layer dampens the spin injection exponentially with a decay length of $2 \pm 0.6$ nm at 180 K. The decay length i…
Antiferromagnets are beneficial for future spintronic applications due to their zero magnetic moment and ultrafast dynamics. But gaining direct access to their antiferromagnetic order and identifying the properties of individual magnetic sublattices, especially in thin films and small-scale devices, remains a formidable challenge. So far, the existing read-out techniques such as anisotropic magnetoresistance, tunneling anisotropic magnetoresistance, and spin-Hall magnetoresistance, are even functions of sublattice magnetization and thus allow us to detect different orientations of the Néel ord…
The development of spintronics and spin-caloritronics devices need efficient generation, detection and manipulation of spin current. The thermal spin current from spin-Seebeck effect has been reported to be more energy efficient than the electrical spin injection methods. But, spin detection has been the one of the bottlenecks since metals with large spin-orbit coupling is an essential requirement. In this work, we report an efficient thermal generation and interfacial detection of spin current. We measured a spin-Seebeck effect in Ni80Fe20 (25 nm)/p-Si (50 nm) (polycrystalline) bilayers witho…
We report the observation of longitudinal spin Seebeck effects (LSSE) in an all-oxide bilayer system comprising an IrO$_2$ film and an Y$_3$Fe$_5$O$_{12}$ film. Spin currents generated by a temperature gradient across the IrO$_2$/Y$_3$Fe$_5$O$_{12}$ interface were detected as electric voltage via the inverse spin Hall effect in the conductive IrO$_2$ layer. This electric voltage is proportional to the magnitude of the temperature gradient and its magnetic field dependence is well consistent with the characteristic of the LSSE. This demonstration may lead to the realization of low-cost, stable,…
The net entropy change corresponding to the charge carriers in a Ni-doped FeRh bulk polycrystal was experimentally evaluated in a single sample using low temperature heat capacity experiments with applied magnetic field, and using Seebeck effect and Hall coefficient measurements at high temperatures across the first order transition. From the heat capacity data a value for the electronic entropy change \(ΔS_{el}\approx8.9\) J\ kg\(^{-1}\)K\(^{-1}\) was extracted, whereas a value of up to 4 J\ kg\(^{-1}\)K\(^{-1}\) was obtained form the Seebeck coefficient. Additionally, the analysis of the See…
We report on the observation of the spin Seebeck effect in antiferromagnetic MnF$_2$. A device scale on-chip heater is deposited on a bilayer of Pt (4 nm)/MnF$_2$ (110) (30 nm) grown by molecular beam epitaxy on a MgF$_2$ (110) substrate. Using Pt as a spin detector layer it is possible to measure thermally generated spin current from MnF$_2$ through the inverse spin Hall effect. The low temperature (2 - 80 K) and high magnetic field (up to 140 kOe) regime is explored. A clear spin flop transition corresponding to the sudden rotation of antiferromagnetic spins out of the easy axis is observed …
A 40-year-old puzzle in transition metal pentatellurides ZrTe$_5$ and HfTe$_5$ is the anomalous peak in the temperature dependence of the longitudinal resistivity, which is accompanied by sign reverses of the Hall and Seebeck coefficients. We give a plausible explanation for these phenomena without assuming any phase transition or strong interaction effect. We show that due to intrinsic thermodynamics and diluteness of the conducting electrons in these materials, the chemical potential displays a strong dependence on the temperature and magnetic field. With that, we compute resistivity, Hall a…
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k…
Here we report the possible signature of Dirac fermions in the magnetoresistance, Hall resistivity and magnetothermopower of LaAgSb$_2$. The opposite sign between Hall resistivity and Seebeck coefficient indicates the multiband effect. Electronic structure calculation reveals the existence of the linear bands and the parabolic bands crossing the Fermi level. The large linear magnetoresistance was attributed to the quantum limit of the possible Dirac fermions or the breakdown of weak-field magnetotransport at the charge density wave phase transition. Analysis of Hall resistivity using two-band …
The spin-Seebeck effect (SSE) in ferromagnetic metals and insulators has been investigated systematically by means of the inverse spin-Hall effect (ISHE) in paramagnetic metals. The SSE generates a spin voltage as a result of a temperature gradient in a ferromagnet, which injects a spin current into an attached paramagnetic metal. In the paramagnet, this spin current is converted into an electric field due to the ISHE, enabling the electric detection of the SSE. The observation of the SSE is performed in longitudinal and transverse configurations consisting of a ferromagnet/paramagnet hybrid s…
Phenomenological equations describing the Seebeck, Hall, Nernst, Peltier, Ettingshausen, and Righi-Leduc effects are numerically solved for the temperature, electric current, and electrochemical potential distributions of semiconductors under magnetic field. The results are compared to experiments.
The spin Seebeck effect (SSE) refers to the generation of a spin current as a result of a temperature gradient in a magnetic material, which can be detected electrically via the inverse spin Hall effect in a metallic contact. Since the discovery of SSE in 2008, intensive studies on SSE have been conducted to elucidate its origin. SSEs appear in a wide range of magnetic materials including ferro-, ferri-, and antiferro-magnets and also paramagnets with classical or quantum spin fluctuation. SSE voltage reflects fundamental properties of a magnet, such as elementary excitation, static magnetic o…
We employ the non-equilibrium thermodynamics of currents and forces to describe the heat transport caused by a spin current in a Pt/YIG bilayer. By starting from the constitutive equations of the magnetization currents in both Pt and YIG, we derive the magnetization potentials and currents. We apply the theory to the spin Peltier experiments in which a spin current, generated by the spin Hall effect in Pt, is injected into YIG. We find that efficient injection is obtained when: i) the thickness of each layer is larger than its diffusion length: $t_{Pt} > l_{Pt}$ and $t_{YIG} > l_{YIG}$ and ii)…
The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing temperature while the resistivity drops sharply due to tunneling of carriers into the p-Si(100). The low resistivity and large Seebeck coefficient of Si give a very high thermoelectric power factor of 25.5mW/K2m at 260K which is an underestimated, lower limit value and is related to the density of states and difference in the work functions of Fe3O4 and Si(100) that create an …
The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe2O4 (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect (ISHE). The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of ~100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally gener…
The thermoelectric properties of PbSe have significantly improved in recent years reaching figures of merit ZT 1.6. The transport properties of the hole doped high temperature thermoelectric material PbSe are particularly interesting and play a key role in this. Here they were analyzed over a wide temperature and hole concentration ranges. The special features observed in the variation of the experimental Seebeck coefficient, and Hall coefficient can be accounted for within the framework of a two band model. Two valence bands separated by a temperature dependent energy offset are considered. T…
The spin diffusion length for thermally excited magnon spins is measured by utilizing a non-local spin-Seebeck effect measurement. In a bulk single crystal of yttrium iron garnet (YIG) a focused laser thermally excites magnon spins. The spins diffuse laterally and are sampled using a Pt inverse spin Hall effect detector. Thermal transport modeling and temperature dependent measurements demonstrate the absence of spurious temperature gradients beneath the Pt detector and confirm the non-local nature of the experimental geometry. Remarkably, we find that thermally excited magnon spins in YIG tra…
High entropy alloy(HEA) films of CrFeCoNiCu were prepared by sputtering, their structure was characterized, and their electric properties measured by temperature dependent Hall and Seebeck measurement. The HEA films show a solid solution with fcc structure, and a 111 texture with columnar grains of widths 15-30 nm extending through film thickness with very many twins. The residual electrical resistivity of the films is around 140 μΩcm and the temperature dependence of the resistivity is metal-like. The temperature coefficient of resistivity (TCR) is small (2 ppm/K). The Hall coefficient is pos…
We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or gallium delivery tube. Films were grown on 6 degree offcut sapphire and (010) \b{eta}-Ga2O3 substrates with growth rates between 0.5 - 22 μm/hr. By controlling the germanium vapor pressure, a wide range of Hall carrier concentrations between 10^17 - 10^19 cm-3 were achieved. Low-temperature Hall data revealed a difference in donor incorporation depending on th…
Resistivity, Hall effect, Seebeck coefficient, thermal conductivity, heat capacity, and magnetic susceptibility data are reported for CrSb2 single crystals. In spite of some unusual features in electrical transport and Hall measurements below 100 K, only one phase transition is found in the temperature range from 2 to 750 K corresponding to long-range antiferromagnetic order below T_N ~ 273 K. Many of the low temperature properties can be explained by the thermal depopulation of carriers from the conduction band into a low mobility band located approximately 16 meV below the conduction band ed…
ZrNiSn and related half Heusler compounds are candidate materials for efficient thermoelectric energy conversion with a reported thermoelectric figure-of-merit of n-type ZrNiSn exceeding unity. Progress on p-type materials has been more limited, which has been attributed to the presence of an impurity band, possibly related to the presence of Ni interstitials in nominally vacant 4d position. The specific energetic position of this band, however, has not been resolved. Here, we report results of a concerted theory-experiment investigation for a nominally undoped ZrNiSn, based on measurements of…
