The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation.
5d iridates have shown vast emergent phenomena due to a strong interplay among its lattice, charge and spin degrees of freedom, because of which the potential in spintronic application of the thin-film form is highly leveraged. Here we have epitaxially stabilized perovskite SrIr$_{0.8}$Sn$_{0.2}$O$_3$ on [001] SrTiO$_3$ substrates through pulsed laser deposition and systematically characterized the structural, electronic and magnetic properties. Physical properties measurements unravel an insulating ground state with a weak ferromagnetism in the compressively strained epitaxial film. The octah…
Most canted antiferromagnets are also anomalous Hall antiferromagnets (AHE AFMs), i.e. they have an anomalous Hall response and other responses with the same symmetry requirements. We suggest that AHE AFMs are promising materials as hosts for high-temperature quantum anomalous Hall effects. By considering models of two-dimensional (001) perovskite layers with strong spin-orbit coupling that isolates an effective total angular momentum $\tilde{j}= \frac{1}{2}$ subspace of the $t_{2g}$ manifold, we propose a strategy to engineering quantum anomalous Hall antiferromagnets.
In most conductors current flow perpendicular to electric field direction (Hall current) can be explained in terms of the Lorentz forces present when charged particles flow in an external magnetic field. However, as established in the very early work of Edwin Hall, ferromagnetic conductors such as Fe, Co, and Ni have an anomalous Hall conductivity contribution that cannot be attributed to Lorentz forces and therefore survives in the absence of a magnetic field. Although the anomalous Hall effect is experimentally strong, it has stood alone among metallic transport effects for much of the last …
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.
Using first-principles calculations, we show that the (001) surface of the ferromagnet La$_{1-x}$Sr$_{x}$MnO$_{3}$ under epitaxial compression favors antiferromagnetic ordering in the first few surface layers, coexisting with ferromagnetic bulk order. The change in magnetic order is accompanied by a marked surface-related spectral pseudogap, signaling a metal-insulator near-transition at the surface. All surfaces exhibit huge outward relaxations an rumpling of the MnO$_{2}$ and LaO surface planes, causing a distinct shift in work function. The AF phase is an extreme surface-assisted case of th…
We report the growth of MgO[001]//Fe(6 nm)/MgO(7 nm) and MgO[001]//Fe(6 nm)/Pt(6 nm) by molecular beam epitaxy and show that the full characterization by spin-orbit ferromagnetic resonance (SO-FMR) allows the determination of magnetic anisotropies as by classical FMR-only studies. The spin mixing conductance of epitaxial Fe/Pt interface was measured to be (1.5 +- 0.5)x10^19 m^2, and the effective spin Hall angle (SHA), was estimated at different in-plane crystalline directions. It was found that SHA is the same in all directions. When taking into account high enough excitation frequencies to a…
The tetragonal phase of chromium (III) oxide, although unstable in the bulk, can be synthesized in epitaxial heterostructures. The theoretical investigation by density functional theory predicts an antiferromagnetic ground state for this compound. We demonstrate experimentally antiferromagnetism up to 40 K in ultrathin films of t-Cr2O3 by electrical measurements exploiting interface effect within a neighboring ultrathin Pt layer. We show that magnetotransport in Pt is affected by both spin-Hall magnetoresistance and magnetic proximity effect while we exclude any role of magnetism for the low-t…
Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry …
Disentangling Strain and Ti3+ Contributions to the Anomalous Hall Effect in Epitaxial RuO2 Films
University of Minnesota−Twin Cities（明尼苏达大学双城分校）；Hankuk University of Foreign Studies（韩国外国语大学）；Kyung Hee University（庆熙大学）；Temple University（天普大学）；Diamond Light Source Ltd.（钻石光源有限公司）；Pacific Northwest National Laboratory（太平洋西北国家实验室）
Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a Kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall / Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D0$_{19}$ Mn$_3$Ge that are flat and continuous. Large anomalous Nernst and inverse …
Quantum anomalous Hall (QAH) phase is a two-dimensional bulk ferromagnetic insulator with a nonzero Chern number in presence of spin-orbit coupling (SOC) but absence of applied magnetic fields. Associated metallic chiral edge states host dissipationless current transport in electronic devices. This intriguing QAH phase has recently been observed in magnetic impurity-doped topological insulators, {\it albeit}, at extremely low temperatures. Based on first-principles density functional calculations, here we predict that layered rhodium oxide K$_{0.5}$RhO$_2$ in noncoplanar chiral antiferromagnet…
We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co2FeAl (CFA) epitaxial films on MgO(001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. An analysis of the electrical transport properties reveals that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only.…
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-g…
The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The quantum Hall effect is shown on epitaxial graphene monolayers that were deliberately grown over substrate steps and subjected to harsh processing procedures, demonstrating the robustness of the epitaxial graphene monolayers and the immunity of their transport properties to temperature, contamination and substrate imperfections. The mobility of the mon…
B20 phase magnetic materials, such as FeGe, have been of significant interests in recent years because they enable magnetic skyrmions, which can potentially lead to low energy cost spintronic applications. One major effort in this emerging field is the stabilization of skyrmions at room temperature and zero external magnetic field. We report the growth of phase-pure FeGe epitaxial thin films on Si(111) substrates by ultrahigh vacuum off-axis sputtering. The high crystalline quality of the FeGe films was confirmed by x-ray diffraction and scanning transmission electron microscopy. Hall effect m…
The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using intermediate buffer layers, in order to finely control the epitaxial strain. The AHE of the different films exhibits intrinsic features such as the sign change of the Hall resistivity with the temperature, even for small thicknesses of SrRuO$_3$. However, the anomalous Hall conductivity is greatly reduced from its intrinsic value as the carrier scattering i…
Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for non-magnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed using polarized neutron reflectometry measurements. The pitch of the spin helix, measured by this method, varies with Co content $y$ and diverges at $y \sim 0.45$. This indicates a zero-crossing of the DM…
Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e. quantum spin Hall (QSH) state, on Si(111) surface with a large energy gap, based on first-principles calculations. We show that Si(111) surface functionalized with 1/3 monolayer of halogen atoms [Si(111)-sqrt(3) x sqrt(3)-X (X=Cl, Br, I)] exhibiting a trigonal superstructure, provides an ideal template for epitaxial growth of heavy metals, such as Bi, which self-assemble into a hexagonal lattice wi…
Tetragonal Mn-based Heusler compounds feature rich exchange interactions and exotic topological magnetic textures, such as antiskyrmions, complimented by the chiral-type Hall effects. This makes the material class interesting for device applications. We report the relation of the magnetic exchange interactions to the thickness and Mn concentration of Mn$_{x}$PtSn films, grown by magnetron sputtering. The competition of the magnetic exchange interactions determines the finite temperature magnetic texture and thereby the chiral-type Hall effects in external magnetic fields. We investigate the ma…
Polycrystalline Sr$_3$OsO$_6$, which is an ordered double-perovskite insulator, is synthesized via solid-state reaction under high-temperature and high-pressure conditions of 1200 $^\circ$C and 6 GPa. The synthesis enables us to conduct a comparative study of the bulk form of Sr$_3$OsO$_6$ toward revealing the driving mechanism of 1000 K ferromagnetism, which has recently been discovered for epitaxially grown Sr$_3$OsO$_6$ films. Unlike the film, the bulk is dominated by antiferromagnetism rather than ferromagnetism. Therefore, robust ferromagnetic order appears only when Sr$_3$OsO$_6$ is unde…
Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electr…
Mn$_2$VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L2$_1$ type Mn$_2$VAl order was controlled by the deposition temperatures. A2-type Mn$_2$VAl films showed no spontaneous magnetization and L2$_1$-type Mn$_2$VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm$^3$ at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn$_2$VAl film deposited at 400$^\circ$C. A bilayer sample of the ant…
The quantum Hall effect, with a Berry's phase of $π$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO$_2$ and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.
The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21) MA/cm2 in W (Ta)/Co60Fe40(t_CoFe)/TiN structures whose origin lies in the epitaxial interfaces. These structures also exhibit very low spin memory loss and high spin mixing conductance. These extraord…
We analyze the experimentally obtained spin-current-related magnetoresistance in epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporates both bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE). The magnetoresistance analysis yields, for the Pt/Co interface, a temperature-independent Rashba parameter in the order of 1e-11 eV m that agrees with theoretical calculations, along with an effective interfacial REE thickness of several angstroms which is in overall consistency with our previous spin-orbit torque analysis. In particular, our results suggest that bot…
The asymmetry between electron and hole doping remains one of the central issues in high-temperature cuprate superconductivity, but our understanding of the electron-doped cuprates has been hampered by apparent discrepancies between the only two known families: Re2-xCexCuO4 and A1-xLaxCuO2. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized films of Sr1-xLaxCuO2 synthesized by oxide molecular-beam epitaxy. Our results reveal a strong coupling between electrons and (pi,pi) antiferromagnetism that induces a Fermi surface reconstruction which p…
Magneto-transport properties have been investigated for epitaxial thin films of B20-type MnSi grown on Si(111) substrates. Both Lorentz transmission electron microscopy (TEM) images and topological Hall effect (THE) clearly point to the robust formation of skyrmions over a wide temperature-magnetic field region. New features distinct from those of bulk MnSi are observed for epitaxial MnSi films: a shorter (nearly half) period of the spin helix and skyrmions, and an opposite sign of THE. These observations suggest versatile features of skyrmion-induced THE beyond the current understanding.
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at filling factor i = 2 starting from relatively low magnetic field (between 4 T and 5 T) when temperature was 1.5 K. Precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 microA current throug…
Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator that exhibits quantum AHE in exfoliated nanoflakes. However, its complicated AHE behaviors may offer an opportunity for the unexplored correlation between magnetism and band structure. Here, we show the Berry curvature dominated intrinsic AHE in wafer-scale MnBi2Te4 thin films. By utilizing a high-dielectric SrTiO3 as the back-gate, we unveil an…
We propose a mechanism for the quenching of the Shubnikov de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scattering time of the conduction electron is magnetic field dependent and of the order of the cyclotron orbit period, \textit{i.e.} can be much smaller than the zero field scattering time. Our scenario involves the extraordinary graphene $n=0$ Landau level of the uncharged layers that produces a high density of states at the Fermi level. We find that the coupling between this $n=0$ Landau level and the conducting states of t…
We prepared high epitaxial thin films of the compound Sr_2FeMoO_6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room temperature in magnetic fields up to 8 T. An electronlike ordinary Hall effect and a holelike anomalous Hall contribution are observed. Both coefficients have reversed sign compared to the colossal magnetoresistive manganites. We found at 300 K an ordinary Hall coefficent of -1.87x10^{-10} m^3/As, corresponding to a nominal charge carrier density of four elec…
The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin d…
We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistanc…
The quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate voltage sweep range is gradually increased in our device, we observe systematic generation and annihilation of oxygen vacancies evidenced from the hysteretic conductance behavior in graphene. Furthermore, based on the experimentally observed linear scaling relation between the effective capacitance and the voltage sweep range, a simple model is constructed to manifest the relationship among t…
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic …
We study anomalous Hall conductivity ($σ$$_{\rm AHC}$) and electronic band structures of Si-substituted Mn$_{2}$CoAl (Mn$_{2}$CoAl$_{1-x}$Si$_{x}$). First-principles calculations reveal that the electronic band structure is like a spin-gapless system even after substituting a quaternary element of Si for Al up to $x = $0.2 in Mn$_{2}$CoAl$_{1-x}$Si$_{x}$. This means that the Si substitution enables the Fermi level shift without largely changing the electronic structures in Mn$_{2}$CoAl. By using molecular beam epitaxy (MBE) techniques, Mn$_{2}$CoAl$_{1-x}$Si$_{x}$ epitaxial films can be grown,…
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point(n ~ 1E10 (1/cm^2)), where mobility of 43700 cm^2/Vs is measured over an area of 10 mm^…
We report the growth of noncollinear antiferromagnetic (AFM) Mn$_3$Ni$_{0.35}$Cu$_{0.65}$N films and the orientation-dependent anomalous Hall effect (AHE) of (001) and (111) films due to nonzero Berry curvature. We found that post-annealing at 500$^\circ$C can significantly improve the AHE signals, though using the appropriate post-annealing conditions is important. The AHE and magnetization loops show sharp flipping at the coercive field in (111) films, while (001) films are hard to saturate by a magnetic field. The anomalous Hall conductivity of (111) films is an order of magnitude larger th…
We report the critical role of La doping in the topological Hall effect observed in LaxEu1-xO thin films (~ 50 nm) grown by molecular beam epitaxy. When the La doping exceeds 0.036, topological Hall effect emerges, which we attribute to the formation of magnetic skyrmions. Besides, the La doping is found to play a critical role in determining the phases, densities, and sizes of the skyrmions in the LaxEu1-xO thin films. The maximum region of the skyrmion phase diagram is observed on the La0.1Eu0.9O thin film. As the La doping increases, the skyrmion density increases while the skyrmion size de…
Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on $c$-plane epitaxial Mn$_3$Sn/Ni$_{80}$Fe$_{20}$, we measure spin-diffusion length ($λ_{\rm Mn_3Sn}$), and spin Hall conductivity ($σ_{\rm{SH}}$) of Mn$_3$Sn thin films: $λ_{\rm Mn_3Sn}=0.42\pm 0.04$ nm and $σ_{\rm{SH}}=-702~\hbar/ e~Ω^{-1}$cm$^{-1}$.…
Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. In the experimental `mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at $n_s \sim 5\times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $\sim 10^{20}$ cm$^{-3}$. Several types of scattering centers including ionized don…
We show tunable strain-induced perpendicular magnetic anisotropy (PMA) over a wide range of thicknesses in epitaxial ferrimagnetic insulator Eu3Fe5O12 (EuIG) and Tb3Fe5O12 (TbIG) thin films grown by pulsed-laser deposition on Gd3Ga5O12 with (001) and (111) orientations, respectively. The PMA field is determined by measuring the induced anomalous Hall loops in Pt deposited on the garnet films. Due to positive magnetostriction constants, compressive in-plane strain induces a PMA field as large as 32.9 kOe for 4 nm thick EuIG and 66.7 kOe for 5 nm thick TbIG at 300 K, and relaxes extremely slowly…
The topological kagome magnet (TKM) Fe3Sn2 exhibits unusual topological properties, flat electronic bands, and chiral spin textures, making it an exquisite materials platform to explore the interplay between topological band structure, strong electron correlations, and magnetism. Here we report the first synthesis of high-quality epitaxial (0001) Fe3Sn2 films with large intrinsic anomalous Hall effect close to that measured in bulk single crystals. In addition, we measured a large, anisotropic anomalous Nernst coefficient Syx of 1.26 μV/K, roughly 2-5x greater than that of common ferromagnets,…
Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm2/Vs) are much larger than that for Si-face transistors. Ini…
We demonstrate strain-tuning of magnetocrystalline anisotropy over a range of more than one thousand Gauss in epitaxial Y3Fe5O12 films of excellent crystalline quality grown on lattice-mismatched Y3Al5O12 substrates. Ferromagnetic resonance (FMR) measurements reveal a linear dependence of both out-of-plane and in-plane uniaxial anisotropy on the strain-induced tetragonal distortion of Y3Fe5O12. Importantly, we find the spin mixing conductance G_r determined from inverse spin Hall effect and FMR linewidth broadening remains large: G_r = 3.33 x 10^14 Ohm^-1m^-2 in Pt/Y3Fe5O12/Y3Al5O12 heterostru…
