Experimental test of the spin mixing interface conductivity concept
Mathias Weiler, Matthias Althammer, Michael Schreier, Johannes Lotze, Matthias Pernpeintner, Sibylle Meyer, Hans Huebl, Rudolf Gross, Akashdeep Kamra, Jiang Xia… 展开作者
Mathias Weiler, Matthias Althammer, Michael Schreier, Johannes Lotze, Matthias Pernpeintner, Sibylle Meyer, Hans Huebl, Rudolf Gross, Akashdeep Kamra, Jiang Xiao, Yan-Ting Chen, HuJun Jiao, Gerrit E. W. Bauer, Sebastian T. B. Goennenwein
We perform a quantitative, comparative study of the spin pumping, spin Seebeck and spin Hall magnetoresistance effects, all detected via the inverse spin Hall effect in a series of over 20 yttrium iron garnet/Pt samples. Our experimental results fully support present, exclusively spin current-based, theoretical models using a single set of plausible parameters for spin mixing conductance, spin Hall angle and spin diffusion length. Our findings establish the purely spintronic nature of the aforementioned effects and provide a quantitative description in particular of the spin Seebeck effect.
We present thermal conductivity measurements performed in three short-period (GaAs)_9(AlAs)_5 superlattices. The samples were grown at different temperatures, leading to different small scale roughness and broadening of the interfaces. The cross-plane conductivity is measured with a differential 3w method, at room temperature. The order of magnitude of the overall thermal conductivity variation is consistent with existing theoretical models, although the actual variation is smaller than expected.
We theoretically compute the interface thermal resistance between crossing single walled carbon nanotubes of various chiralities, using an atomistic Green's function approach with semi-empirical potentials. The results are then used to model the thermal conductivity of three dimensional nanotube pellets in vacuum. For an average nanotube length of 1 $μ$m, the model yields an upper bound for the thermal conductivity of densely compacted pellets, of the order of a few W/m-K. This is in striking contrast with the ultra-high thermal conductivity reported on individually suspended nanotubes. The re…
Precise control of lattice mismatch accommodation and cation interdiffusion across the interface is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La1-xSrxMnO3 (LSMO) as a prototypical phase transition material and establish vertical epitaxial interfaces with NiO to explore the strong interplay between strain accommodation, stoichiometry modification, and localized electron transport across the interface. It is found that localized stoichiomet…
A new model for predicting the effective thermal conductivity of polycrystalline materials is presented. In contrast to existing models, our new model is based on the thin-interface description of grain boundaries (GBs) and treats GBs as an autonomous phase with its own thermal conductivity. This treatment allows the model to account for the effects of segregation/doping, interface structural/phase transition, and interface decohesion on the effective thermal conductivity. finite-element simulations were performed to validate the new model. The simulations proved its higher accuracy compared t…
Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the thickness-dependent band structure implies the possibility of band realignment and a new interface charge state with properties distinct from the isolated layers. In this report, we probe the interface charge state using scanning photocurrent microscopy and gate-dependent transport with source-drain bias applied along the interface. Enhanced photoresponse obser…
Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resulting physical properties are scarce -- typically the information is inferred from post growth characterization. Here, we report on real time measurements of the transport properties of SrTiO3-based h…
The discovery of conducting two-dimensional electron gas (2DEG) and magnetism at the interface between insulating nonmagnetic oxides, as exemplified by the polar LaAlO3 and nonpolar SrTiO3 has raised prospects for attaining interfacial functionalities absent in the component materials. Yet, the microscopic origin of such emergent phenomena remains unclear, posing obstacles to design of improved functionalities. Using first principles defect calculations, we reveal a unifying polarity-induced defect mechanism for both conductivity and magnetism at polar-nonpolar interfaces of nonmagnetic insula…
Multilayered heterostructures of Ce0.85Sm0.15O2-delta and Y0.16Zr0.92O2-delta of a high crystallographic quality were fabricated on (001) - oriented MgO single crystal substrates. Keeping the total thickness of the heterostructures constant, the number of ceria-zirconia bilayers was increased while reducing the thickness of each layer. At each interface Ce was found primarily in the reduced, 3+ oxidation state in a layer extending about 2 nm from the interface. Concurrently, the conductivity decreased as the thickness of the layers was reduced suggesting a progressive confinement of the charge…
The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ capping layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a significantly lower LaAlO$_3$ film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spati…
We propose a simple analytical model to explain possible appearance of the metallic conductivity in the two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ interface. Our model considers the interface within a macroscopic approach which is usual to semiconductor heterojunctions and is based on drift-diffusion equations. The solution of these equations allows to obtain the positions of band edges as a function of distances from the interface. We show that for the 2D metallic conductivity to appear at the interface, the constituting substances should have the same type (either electronic or hole) of conduc…
Systematic experimental and theoretical research on the role of microstructure and interface thermal resistance on the thermal conductivity of the PbTe-CoSb3 bulk polycrystalline composite is presented. In particular, the correlation between the particle size of the dispersed phase and interface thermal resistance (R_{int}) on the phonon thermal conductivity (κ_{ph}) is discussed. With this aim, a series of PbTe-CoSb_3 polycrystalline composite materials with the different particle sizes of CoSb_3 was prepared. The structural (XRD) and microstructural analysis (SEM/EDXS) confirmed assumed chem…
We investigate the evolution of the cross-plane thermal conductivity $κ$ of superlattices (SLs) as interfaces change from perfectly abrupt to totally intermixed, by using non-equilibrium molecular dynamics simulations in combination with the spectral heat current calculations. We highlight the role of surface-interdiffusion-driven intermixing by calculating the $κ$ of SLs with changing interface roughness, whose tuning allows for the $κ$ values much lower than the "alloy limit" and the abrupt interface limit in same cases. The interplay between alloy and interface scattering in different frequ…
The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, promising candidates for the next generation non-volatile random-access memories, exhibits fascinating topological properties. Depending on the atomic-layer-stacking sequence of the GeTe block, the iPCM can be either in the SET (Ge-Te-Ge-Te) or RESET (Te-Ge-Ge-Te) states, where the former exhibits ferroelectric polarization and electrical conductivity two orders of magnitude larger than that of the RESET state. But, its origin remains elusive. Here, we predict the emergence of a Weyl semimetal phase in the SET state induced by the ferroel…
We present a novel approach to reduce the thermal conductivity ($κ$) in thermoelectric composite materials using acoustic impedance mismatch and the Debye model. Also, the correlation between interface thermal resistance (R$_{int}$) and the particle size of the dispersed phase on the k of the composite is discussed. In particular, the $κ$ of an oxide composite which consists of a natural superlattice Aurivillius phase (SrBi$_4$Ti$_4$O$_{15}$) as a matrix and perovskite (La$_{0.7}$Sr$_{0.3}$MnO$_3$) as a dispersed phase is investigated. A significant reduction in the $κ$ of composite, even lowe…
The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions. A high sheet carrier concentration of 2x10$^{16}$ cm$^{-2}$ and mobility of 30,000 cm$^2$/V s is reported for the metallic interfaces, which is similar to the quasi-two dimensional gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface with similar growth conditions. High-resolution synchrotron X-ray-based structural determination of the atomic-scale structures of bo…
Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their barrier layers, in this case Ta. We also present a semiclassical model to predict the technological impact of this scattering and find that a barrier layer can significantly decrease conductivity, consistent with previously published measurements.
After the discovery of graphene, there have been tremendous efforts in exploring various layered two-dimensional (2D) materials for their potential applications in electronics, optoelectronics, as well as energy conversion and storage. One of such 2D materials, SnS2, which is earth abundant, low in toxicity, and cost effective, has been reported to show a high on/off current ratio, fast photodetection, and high optical absorption, thus making this material promising for device applications. Further, a few recent theoretical reports predict high electrical conductivity and Seebeck coefficient i…
We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3 interfaces, forming drain-source channels in field-effect devices are non-ohmic. The differential resistance at zero channel bias diverges within a 2% variation of the carrier density. Above n_c, the conductivity of the ohmic channels has a metal-like temperature dependence, while below n_c conductivity sets in only above a threshold electric field. For a g…
Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films.
Diminution of the thermal conductivity is a crucial aspect in thermoelectric research. We report a systematic and significant reduction of the cross-plane thermal conductivity in a model system consisting of DC sputtered TiNiSn and HfNiSn half-Heusler superlattices. The reduction of $κ$ is measured by the 3$ω$ method and originates from phonon scattering at the internal interfaces. Heat transport in the superlattices is calculated based on Boltzmann transport theory, including a diffusive mismatch model for the phonons at the internal interfaces. Down to superlattice periodicity of 3 nm the ph…
When insulator LaAlO3 is grown by epitaxy onto a TiO2-terminated {100} surface of insulator SrTiO3, the resulting system has a metallic character. This phenomenon has been associated with an electrostatic frustration at the interface, as {100} surfaces of SrTiO3 are neutral while those of LaAlO3 are polar, but its microscopic mechanism is not quite understood. Here, we present a structural characterisation of this interface by aberration-corrected transmission electron microscopy. The unit cells at the interface appear elongated: we discuss this distortion in terms of electrostatic charge and …
Mixing heterogeneous Li-ion conductive materials is one of potential ways to enhance the Li-ion conductivity more than that of the parent materials. However, the development of the mixtures had not exhibited significant progress because it is a formidable task to cover the vast possible composition of the parent materials using traditional ways. Here, we introduce a fashion based on machine learning to optimize the composition ratio of ternary Li3PO4-Li3BO3-Li2SO4 mixture for its Li-ion conductivity. According to our results, the optimum composition of the ternary mixture system is 25:14:61 (L…
We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission Electron Microscopy shows atomically sharp and continuous interfaces while EELS measurements show some slight intermixing. The elemental ratio of La to Al measured by EDX is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films gr…
The rich interaction phenomena at antiferromagnet (AFM)/ ferromagnet (FM) interfaces are key ingredients in AFM spintronics, where many underlying mechanisms remain unclear. Here we report a correlation observed between interfacial Dzyaloshinskii-Moriya interaction (DMI) Ds and effective spin mixing conductance g at IrMn/CoFeB interface. Both Ds and g are quantitatively determined with Brillouin light scattering measurements, and increase with IrMn thickness in the range of 2.5~7.5 nm. Such correlation likely originates from the AFM-states-mediated spin-flip transitions in FM, which promote bo…
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that…
We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal resistance, and a plateau-like structure in the Hall conductivity. The Landau indices of the plateaus in the Hall conductivity data show spacing close to 4, in units of the quantum of conductance. These experimental features can be explained by a magnetic breakdown transition, which quantitatively explains the area, structure, and degeneracy of the measured Fermi s…
Chemical and structural diversity present in hexagonal boron nitride ((h-BN) and graphene hybrid nanostructures provide new avenues for tuning various properties for their technological applications. In this paper we investigate the variation of thermal conductivity ($κ$) of hybrid graphene/h-BN nanostructures: stripe superlattices and BN (graphene) dots embedded in graphene (BN) are investigated using equilibrium molecular dynamics. To simulate these systems, we have parameterized a Tersoff type interaction potential to reproduce the ab initio energetics of the B-C and N-C bonds for studying …
A platinum (Pt)/yttrium iron garnet (YIG) bilayer system with a well-controlled interface has been developed; spin mixing conductance at the Pt/YIG interface has been studied. Crystal perfection at the interface is experimentally demonstrated to contribute to large spin mixing conductance. The spin mixing conductance is obtained to be $1.3\times10^{18} \rm{m^{-2}}$ at the well-controlled Pt/YIG interface, which is close to a theoretical prediction.
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces formed by insulating transition metal oxides. Here we investigate interfaces between crystals of conjugated organic molecules, which are large gap undoped semiconductors, i.e. essentially insulators. We find that highly conducting interfaces can be realized with resistivity ranging from 1 to 30 kOhm square, and that, for the best samples, the temperature de…
We demonstrate that the magnetic field dependence of the conductivity measured at the transition temperature allows the dynamical critical exponent, the thickness of thin superconducting films and interfaces, and the limiting lateral length to be determined. The resulting tool is applied to the conductivity data of an amorphous Nb0.15 Si0.85 film and a LaAlO3/SrTiO3 interface.
Thermal spike model (TSM) is presently a widely accepted mechanism of swift heavy ion (SHI) - matter interaction. It provides explanation to various SHI induced effects including mixing across interfaces. The model involves electron-phonon (e-p) coupling to predict the evolution of lattice temperature with time. SHI mixing is considered to be a result of diffusion in transient molten state thus achieved. In this work, we assess this conception primarily via tuning the e-p coupling strength by taking a series Pd$_{1-x}$Ni$_x$ of a completely solid soluble binary, and then observing 100 MeV Au i…
Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.
Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal oxides, perovskite oxides, chalcogenides, carbon- and silicon-based materials, as well as organic materials. RS phenomena can be used to store information and offer an attractive performance, which encompasses fast switching speeds, high scalability, and the desirable compatibility with Si-based complementary-metal-oxide-semiconductor fabrication. This is promisi…
UO2/BeO interfacial thermal resistance (ITR) is calculated by diffuse mismatch model (DMM) and the effects of ITR on UO2-BeO thermal conductivity are investigated. ITR predicted by DMM is on the order of 10-9 m2K/W. Using this ITR, UO2-BeO thermal conductivities are calculated by theoretical models and compared with experimental data. The results indicate that DMM prediction is applicable to the interface between UO2 and dispersed BeO, while not applicable to the interface between UO2 and continuous BeO. If the thermal conductivity of UO2 containing continuous BeO was to be in agreement with e…
Synergistic Interface Stability and High Room-Temperature Ionic Conductivity for Wide-Temperature All-Solid-State Batteries Based on Li6+xSixSb1-xS5I Electrolytes
The increase in the temperature of photovoltaic (PV) solar cells affects negatively their power conversion efficiency and decreases their lifetime. The negative effects are particularly pronounced in concentrator solar cells. Therefore, it is crucial to limit the PV cell temperature by effectively removing the excess heat. Conventional thermal phase change materials (PCMs) and thermal interface materials (TIMs) do not possess the thermal conductivity values sufficient for thermal management of the next generation of PV cells. In this paper, we report the results of investigation of the increas…
Using density functional theory calculations, we have found an enhanced magneto-optical Kerr effect in Fe/insulator interfaces. The results of our study indicate that interfacial Fe atoms in the Fe films have a low-dimensional nature, which causes the following two effects: (i) The diagonal component $σ_{xx}$ of the optical conductivity decreases dramatically because the hopping integral for electrons between Fe atoms is suppressed by the low dimensionality. (ii) The off-diagonal component $σ_{xy}$ of the optical conductivity does not change at low photon energies, but it is enhanced at photon…
Successful preparation of polymer nanocomposites, exploiting graphene-related materials, via melt mixing technology requires precise design, optimization and control of processing. In the present work, the effect of different processing parameters during the preparation of poly (butylene terephthalate) nanocomposites, through ring-opening polymerization of cyclic butylene terephthalate in presence of graphite nanoplatelets (GNP), was thoroughly addressed. Processing temperature (240°C or 260°C), extrusion time (5 or 10 minutes) and shear rate (50 or 100 rpm) were varied by means of a full fact…
We present deposition and characterization of multilayers consisting of 20 repetitions of 15 $Å$ thick permalloy Ni$_{80}$Fe$_{20}$ at. \% (Py) and 5 $Å$ Pt. The samples were prepared by two different sputter deposition methods, namely dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS), that represent low and moderate ionized flux fraction of the film forming material, respectively, for deposition of the Py layers. The effect of substrate roughness, working gas pressure and sputter power on the in-plane uniaxial magnetic anisotropy of the films are studied. The…
This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained …
Lateral inhomogeneities in the formation of 2-dimensional electron gases (2DEG) directly influence their electronic properties. Understanding their origin is an important factor for fundamental interpretations, as well as high quality devices. Here, we studied the local formation of the buried 2DEG at LaAlO3/SrTiO3 (LAO/STO) interfaces grown on STO (100) single crystals with partial TiO2 termination, utilizing in-situ local conductivity atomic force microscopy (LC-AFM) and scattering-type scanning near-field optical microscopy (s-SNOM). Using substrates with different degrees of chemical surfa…
The contact resistance between two dissimilar semiconductors is determined by the carrier transmission through their interface. Despite the ubiquitous presence of interfaces, quantitative simulation of charge transport across such interfaces is difficult, limiting the understanding of interfacial charge transport. This work employs Green's functions to study the charge transport across representative Si/Ge interfaces. For perfect interfaces, it is found that the transmittance is small and the contact resistance is high, not only because the mismatch of carrier pockets makes it hard to meet the…
In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on non-polar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness-dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5 electron from the LaAlO3 film into the LaAlO3/SrTiO3 interface is expected. Here we show that in conducting samples (more than 4 unit cells of LaAlO3) there is indeed a 0.5 electron transfer from LaAlO3 into the LaAlO3/SrTiO3 interface by studying …
Development of the next generation thermal interface materials with high thermal conductivity is important for thermal management and packaging of electronic devices. We report on the synthesis and thermal conductivity measurements of non-curing thermal paste, i.e. grease, based on mineral oil with the mixture of graphene and few-layer graphene flakes as the fillers. It was found that graphene thermal paste exhibits a distinctive thermal percolation threshold with the thermal conductivity revealing a sublinear dependence on the filler loading. This behavior contrasts with the thermal conductiv…
Using nonequilibrium molecular dynamics simulations, we study the heat conduction in graphene flakes composed by two regions. One region is mass-loaded and the other one is intact. It is found that the mass interface between the two regions greatly decreases the thermal conductivity, but it would not bring thermal rectification effect. The dependence of thermal conductivity upon the heat flux and the mass difference ratio are studied to confirm the generality of the result. The interfacial scattering of solitons is studied to explain the absence of rectification effect.
Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is commonly invoked to explain the phenomenon, the details of the process and the nature of the interfacial charge carriers remain largely unexplored. Here we use Schottky-gated heterostructures to probe the conducting layer at the interface between rubrene and PDIF-CN2 single crystals. Gate-modulated conductivity measurements demonstrate that interfacial transpor…
We have deposited polycrystalline Re doped $(Fe_{65}Co_{35})_{100-x}Re_{x}$ (0 $\leq$ x $\leq$ 12.6 at\%) thin films grown under identical conditions and sandwiched between thin layers of Ru in order to study the phenomenon of spin pumping as a function of Re concentration. In-plane and out-of-plane ferromagnetic resonance spectroscopy results show an enhancement of the Gilbert damping with an increase in Re doping. We found evidence of an increase in the real part of effective spin mixing conductance [Re($g^{\uparrow\downarrow}_{eff}$)] with the increase in Re doping of 6.6 at\%, while a decr…
We propose a new theoretical approach to analyze the experimental data for thermal conductivity of single-grain $i$-AlPdMn quasicrystals. The interpretation is based on the picture where cluster interfaces are the main source of phonon scattering at low temperatures. The scattering due to strain fields of cluster interface is considered in terms of finite dislocation wall or, equivalently, wedge disclination dipole. Our numerical calculations show that experimentally observed thermal conductivity in a wide temperature range can be well fitted by a combination of wedge discliantion dipole scatt…
There is a growing interest in the development of functional metal oxides with mixed ionic electronic conduction for their application in different strategic fields. In particular, ionic transport-related phenomena are of primary importance in energy transformation and storage devices, such as solid oxides fuel cells (SOFC) or batteries. Traditionally, the main issue that hindered a wide spread of solid state electrochemical devices is the slow ionic conduction and the reduced number of families of materials with pure ionic conductivity able to play the role of the electrolyte. This is due to …
The properties of single-crystal SrTiO$_{3}$ substrates and homoepitaxial SrTiO$_{3}$ films grown by pulsed laser deposition have been compared, in order to understand the loss of interfacial conductivity when more than a critical thickness of nominally homoepitaxial SrTiO$_{3}$ is inserted between a LaAlO$_{3}$ film and a SrTiO$_{3}$ substrate. In particular, the chemical composition and the structure of homoepitaxial SrTiO$_{3}$ investigated by low-energy ion-scattering and surface x-ray diffraction, show that for insulating heterointerfaces, a Sr-excess is present between the LaAlO$_{3}$ an…
