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arXiv 0907.2999cond-mat.mes-hallcond-mat.mtrl-sci
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纳米互连技术中Cu/Ta界面电子传输及其对电导率的影响

Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology

Baruch Feldman, Scott T. Dunham

摘要:

纳米级金属互连中的电阻率增大是集成电路中的性能限制因素。在这里,我们提出了计算的电子散射和传输之间的界面铜互连和它们的阻挡层,在这种情况下Ta。我们还提出了一个半经典模型来预测这种散射的技术影响,并发现阻挡层可以显着降低电导率,与以前发表的测量结果一致。

英文摘要:

Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their barrier layers, in this case Ta. We also present a semiclassical model to predict the technological impact of this scattering and find that a barrier layer can significantly decrease conductivity, consistent with previously published measurements.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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