arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0808.0865cond-mat.mtrl-sci
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EuX(X=Te,Se,S,O)磁性半导体中的压致电子混合和铁磁有序增强

Pressure-induced electronic mixing and enhancement of ferromagnetic ordering in EuX (X=Te, Se, S, O) magnetic semiconductors

Narcizo M. Souza-Neto, Daniel Haskel, Yuan-Chieh Tseng, Gerard Lapertot

摘要:

在金刚石对顶砧装置上,用特定元素和轨道的X射线吸收光谱研究了EuX(X=Te,Se,S,O)单硫族化合物的电子结构与压力和阴离子的关系.各向同性晶格收缩通过诱导Eu 4{ \it f}和5{ \it d}电子轨道的混合而提高铁磁有序温度。阴离子取代(Te $\to$ O)通过自旋极化阴离子{ \it p}态增强竞争交换途径,抵消伴随的晶格收缩的效果。这些结果对于通过界面应变或化学取代来增强薄膜中FM交换相互作用的努力具有重要意义。

英文摘要:

The pressure- and anion-dependent electronic structure of EuX (X=Te, Se, S, O) monochalcogenides is probed with element- and orbital-specific X-ray absorption spectroscopy in a diamond anvil cell. An isotropic lattice contraction enhances the ferromagnetic ordering temperature by inducing mixing of Eu 4{\it f} and 5{\it d} electronic orbitals. Anion substitution (Te $\to$ O) enhances competing exchange pathways through spin-polarized anion {\it p} states, counteracting the effect of the concomitant lattice contraction. The results have strong implications for efforts aimed at enhancing FM exchange interactions in thin films through interfacial strain or chemical substitutions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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