Ferromagnetic ordering in dilute magnetic dielectrics with and without free carriers
K. Kikoin
备注：
10 pages, 3 figures. The paper was presented at the Moscow Internation Symposium on Magnetism (MISM-08). To be published in Journ. Magnetism and Magnetic Materials
The state of art in the theoretical and experimental studies of transition metal doped oxides (dilute magnetic dielectrics) is reviewed. The available data show that the generic non-equilibrium state of oxide films doped with magnetic impurities may either favor ferromagnetism with high Curie temperature or result in highly inhomogeneous state without long-range magnetic order. In both case concomitant defects (vacancies, interstitial ions play crucial part.
This paper reviews the present understanding of the origin of ferromagnetic response of diluted magnetic semiconductors and diluted magnetic oxides as well as in some nominally magnetically undoped materials. It is argued that these systems can be grouped into four classes. To the first belong composite materials in which precipitations of a known ferromagnetic, ferrimagnetic or antiferromagnetic compound account for magnetic characteristics at high temperatures. The second class forms alloys showing chemical nano-scale phase separation into the regions with small and large concentrations of t…
We have performed x-ray magnetic circular dichroism (XMCD) and valence-band photoemission studies of the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te. XMCD signals due to ferromagnetism were observed at the Cr 2p absorption edge. Comparison with atomic multiplet calculations suggests that the magnetically active component of the Cr ion was divalent under the tetrahedral crystal field with tetragonal distortion along the crystalline a-, b-, and c-axes. In the valence-band spectra, spectral weight near the Fermi level was strongly suppressed, suggesting the importance of Jahn-Teller ef…
We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric function is calculated within the random phase approximation and, within this metallic regime, we treat disorder effects perturbatively and thermal effects within the mean field approximation. We also discuss the implications of this calculations on carrier concentration measurements from the optical f-sum rule and the analysis of plasmon-phonon cou…
The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstitial Zn. Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results demonstrate for the first time reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, and present new opportunities for integrating magnetism and conductivity in semiconductor…
Being a wide band gap system GaMnN attracted considerable interest after the discovery of highest reported ferromagnetic transition temperature $T_C$ $\sim$ 940 K among all diluted magnetic semiconductors. Later it become a debate due to the observation of either a ferromagnetic state with very low $T_C$ $\sim$ 8 K or sometimes no ferromagnetic state at all. We address these issues by calculating the ferromagnetic window, $T_C$ Vs $p$, within a $t-t'$ Kondo lattice model using a spin-fermion Monte-Carlo method on a simple cubic lattice. We exploit the next-nearest-neighbor hopping $t'$ to tune…
Employing elastic and inelastic neutron scattering (INS) techniques, we report on detailed microscopic properties of the ferromagnetism in he magnetic topological insulator (Bi$_{0.95}$Mn$_{0.05}$)$_{2}$Te$_{3}$. Neutron diffraction of polycrystalline samples show the ferromagnetic (FM) ordering is long-range within the basal plane, and mainly 2D in character with short-range correlations between layers below $T_{\mathrm{C}} \approx 13$ K. Despite the random distribution of the dliute Mn atoms, we find that the 2D-like magnetic peaks are commensurate with the chemical structure, and the absenc…
In a diluted magnetic semiconductor system, the exchange interaction between magnetic impurities has two independent components: a direct antiferromagnetic interaction and a ferromagnetic interaction mediated by charge carriers. Depending on the system parameters, the ground state of the system may be ordered either ferromagnetically or randomly. In this paper we use percolation theory to find the ferromagnetic transition temperature and the location of the quantum critical point separating the ferromagnetic phase and a valence bond glass phase.
Influence of number of particles considered in numerical simulations on complex dielectric permittivity of binary dilute dielectric mixtures in two-dimensions are reported. In the simulations, dodecagons (polygons with 12-sides) were used to mimic disk-shaped inclusions. Using such an approach we were able to consider $16^2$ particles in a unit-square. The effective dielectric permittivity of the mixtures were calculated using the finite element at two different frequecies which were much higher and lower than the characteristic relaxation rate of the Maxwell-Wagner-Sillars polarization. The r…
We extend the model of ferromagnetic superexchange in dilute magnetic semiconductors to the ferromagnetically ordered highly insulating compounds (dilute magnetic dielectrics). The intrinsic ferromagnetism without free carriers is observed in oxygen-deficient films of anatase TiO_2 doped with transition metal impurities in cation sublattice. We suppose that ferromagnetic order arises due to superexchange between complexes [oxygen vacancies + magnetic impurities], which are stabilized by charge transfer from vacancies to impurities. The Hund rule controls the superexchange via empty vacancy rel…
We report the synthesis and characterization of bulk form diluted magnetic semiconductors Ba(Zn1-2xMnxCox)2As2 (0 <= x <= 0.15) with a crystal structure identical to that of 122-type Fe-based superconductors. Mn and Co co-doping into the parent compound BaZn2As2 results in a ferromagnetic ordering below TC ~ 80 K. Hall effect measurements indicate that the carrier are n-type with the density of ~10^17/cm3. The common crystal structure and excellent lattice matching between the p-type ferromagnetic (Ba1-yKy)(Zn1-xMnx)2As2, the n-type ferromagnetic Ba(Zn1-2xMnxCox)2As2, the antiferrmagnetic BaMn…
Magneto-optical properties of ZnO:Co and ZnO:Ni films were measured. Magnetization measurements show that some of the films are paramagnetic and others are ferromagnetic. Magnetic circular dichroism clarified that Zn1-xCoxO and Zn1-xNixO included in samples are paramagnetic diluted magnetic semiconductors. Ferromagnetic precipitations seem to be responsible for the observed ferromagnetic behaviors. Criteria to judge the ferromagnetic DMS are also discussed.
Mn doping in dilute III-V alloys has been examined as a route to enhance ferromagnetic stability. Strong valence band bowing is expected at the dilute limit, implying a strong modification of the ferromagnetic stability upon alloying, with even an increase in some cases. Using first principle electronic structure calculations we show that while codoping with a group V anion enhances the ferromagnetic stability in some cases when the effects of relaxation of the lattice are not considered, strong impurity scattering in the relaxed structure result in a reduction of the ferromagnetic stability.
Employing the self-consistent Green's function approach, we studied the temperature dependence of the spin-wave stiffness in diluted magnetic semiconductors. Note that the Green's function approach includes the spatial and temperature fluctuations simultaneously which was not possible within conventional Weiss mean-field theory. It is rather interesting that we found the stiffness becomes dramatically softened as the critical temperature is approached, which seems to explain the mysterious sharp drop of magnetization curves in samples within diffusive regime.
The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li doping. In contrast, the Fe$^{3+}$ intensity increased with Li doping relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li content, suggesting that most of the doped holes enter the O $2p$ and/or the charge-transferred configuration Ni $3d^8\underline{L}$. The Fe 3d partial density of states and the host valence-band emiss…
Diluted ferromagnetic semiconductors (DMSs) that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronics (spintronics) devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in III-V (Ga,Mn)As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature $T_C$ of 230 K has been achieved in (Ba,K)(Zn,Mn)$_2$As$_2$. However, most DMSs, including (Ga,Mn)As, are p-type, i.e., the carriers that mediate ferromagne…
Here we report the successful synthesis of a spin- & charge-decoupled diluted magnetic semiconductor (Ca,Na)(Zn,Mn)2As2, crystallizing into the hexagonal CaAl2Si2 structure. The compound shows a ferromagnetic transition with a Curie temperature up to 33 K with 10% Na doping, which gives rise to carrier density of np~10^20 cm^-3. The new DMS is a soft magnetic material with HC<400 Oe. The anomalous Hall effect is observed below the ferromagnetic ordering temperature. With increasing Mn doping, ferromagnetic order is accompanied by an interaction between the local spin and mobile charge, giving …
The electronic structure of the Cr ions in the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te ($x=0.03$ and 0.15) thin films has been investigated using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). Magnetic-field ($H$) and temperature ($T$) dependences of the Cr $2p$ XMCD spectra well correspond to the magnetization measured by a SQUID magnetometer. The line shape of the Cr $2p$ XMCD spectra is independent of $H$, $T$, and $x$, indicating that the ferromagnetism is originated from the same electronic states of the Cr ion. Cluster-model analysis indicat…
A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is presented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener model. The material dependence of Curie temperature and magnetization versus hole compensation reveals that the manipulation of magnetic properties in III-Mn-V dilute ferromagnetic semiconductors by ion i…
We use muon spin relaxation (muSR) to investigate the magnetic properties of a bulk form diluted ferromagnetic semiconductor (DFS) Li1.15(Zn0.9Mn0.1)P with T_C ~ 22 K. MuSR results confirm the gradual development of ferromagnetic ordering below T_C with a nearly 100% magnetic ordered volume. Despite its low carrier density, the relation between static internal field and Curie temperature observed for Li(Zn,Mn)P is consistent with the trend found in (Ga,Mn)As and other bulk DFSs, indicating these systems share a common mechanism for the ferromagnetic exchange interaction. Li1+y(Zn1-xMnx)P has t…
The challenging problem of skew scattering for Hall effects in dilute ferromagnetic alloys, with intertwined effects of spin-orbit coupling, magnetism and impurity scattering, is studied here from first principles. Our main aim is to identify chemical trends and work out simple rules for large skew scattering in terms of the impurity and host states at the Fermi surface, with particular emphasis on the interplay of the spin and anomalous Hall effects in one and the same system. The predicted trends are benchmarked by referring to three different \emph{ab initio} methods based on different appr…
We study the effect that the ferromagnetic order has on the electrical properties of Diluted Magnetic Semiconductors. We analyze the temperature dependence of the dielectric constant and of the resistivity of Ga$_{1-x}$Mn$_x$As. In our treatment the electronic structure of the semiconductor is described by a six band Kohn-Luttinger Hamiltonian, the thermal fluctuations of the Mn magnetic moments are treated in the mean field approximation, the carrier-carrier interaction within the random phase approximation, and the transport properties using the relaxation time approximation. We find that th…
We report on magnetic and electrical transport properties of Sb2-xCrxTe3 single crystals with 0 <= x <= 0.095 over temperatures from 2 K to 300 K. A ferromagnetic state develops in these crystals at low temperatures with Curie temperatures that are proportional to x (for x > 0.014), attaining a maximum value of 20 K for x = 0.095. Hysteresis below TC for applied field parallel to the c-axis is observed in both magnetization and Hall effect measurements. Magnetic as well as transport data indicate that Cr takes the 3+ (3d3) valence state, substituting for antimony in the host lattice structure,…
We have studied the dielectric properties of the ferromagnetic spinel CdCr$_2$S$_4$ from first principles. Zone-center phonons and Born effective charges were calculated by frozen-phonon and Berry phase techniques within LSDA+U. We find that all infrared-active phonons are quite stable within the cubic space group. The calculated static dielectric constant agrees well with previous measurements. These results suggest that the recently observed anomalous dielectric behavior in CdCr$_2$S$_4$ is not due to the softening of a polar mode. We suggest further experiments to clarify this point.
Films of ZnO doped with magnetic ions, Mn and Co and, in some cases, with Al have been fabricated with a very wide range of carrier densities. Ferromagnetic behaviour is observed in both insulating and metallic films, but not when the carrier density is intermediate. Insulating films exhibit variable range hopping at low temperatures and are ferromagnetic at room temperature due to the interaction of the localised spins with static localised states. The magnetism is quenched when carriers in the localised states become mobile. In the metallic (degenerate semiconductor) range, robust ferromagne…
Using first-principles density functional calculations, we study the electronic and magnetic properties of ferromagnetic insulating double-perovskite compound La2NiMnO6, which has been reported to exhibit interesting magnetic field sensitive dielectric anomaly as a function of temperature. Our study reveals existence of very soft infra-red active phonons that couple strongly with spins at the Ni and Mn sites through modification of the super-exchange interaction. We suggest that these modes are the origin for observed dielectric anomaly in La2NiMnO6.
We study the two-impurity Anderson model for a semiconductor host using the quantum Monte Carlo technique. We find that the impurity spins exhibit ferromagnetic correlations with a range which can be much more enhanced than in a half-filled metallic band. In particular, the range is longest when the Fermi level is located above the top of the valence band and decreases as the impurity bound state becomes occupied. Comparisons with the photoemission and optical absorption experiments suggest that this model captures the basic electronic structure of Ga_{1-x}Mn_xAs, the prototypical dilute magne…
We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include unlimited solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by detail ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the microscopic physical pictur…
Influence of disorder on the ferromagnetic phase transition in diluted (III,Mn)V semiconductors is investigated analytically. The regime of small disorder is addressed, and the enhancement of the critical temperature by disorder is found both in the mean field approximation and from the analysis of the zero temperature spin stiffness. Due to disorder, the spin wave fluctuations around the ferromagnetically ordered state acquire a finite mass. At large charge carrier band width, the spin wave mass squared becomes negative, signaling the breakdown of the ferromagnetic ground state and the onset …
Considering a general situation where a semiconductor is doped by magnetic impurities leading to a carrier-induced ferromagnetic exchange coupling between the impurity moments, we show theoretically the possible generic existence of three ferromagnetic transition temperatures, T_1 > T_2 > T_3, with two distinct ferromagnetic regimes existing for T_1 > T > T_2 and T < T_3. Such an intriguing re-entrant ferromagnetism, with a paramagnetic phase (T_2 > T > T_3) between two ferromagnetic phases, arises from a subtle competition between indirect exchange induced by thermally activated carriers in a…
We report the synthesis and characterization of a bulk diluted magnetic semiconductor (La1-xBax)(Zn1-xMnx)AsO (0 <= x <= 0.2) with a layered crystal structure identical to that of the "1111" FeAs superconductors. No ferromagnetic order occurs for (Zn,Mn) substitution in the parent compound LaZnAsO without charge doping. Together with carrier doping via (La,Ba) sub- stitution, a small amount of Mn substituting for Zn results in ferromagnetic order with TC up to ~40 K, although the system remains semiconducting. Muon spin relaxation measurements confirm the development of ferromagnetic order in …
In this paper we report successful synthesis and magnetic properties of (Ca,Na)(Zn,Mn)2Sb2 as a new ferromagnetic dilute magnetic semiconductor (DMS). In this DMS material the concentration of magnetic moments can be controlled independently from the concentration of electric charge carriers that are required for mediating magnetic interactions between these moments. This feature allows us to separately investigate the effect of carriers and of spins on the ferromagnetic properties of this new DMS alloy, and particularly of the critical ferromagnetic behavior. We use modified Arrott plot techn…
This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mn-containing III-V as well as II-VI, V_2-VI_3, IV-VI, I-II-V, and elemental group IV semiconductors are described paying particular attention to the most thoroughly investigated system (Ga,Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10%. Multilayer str…
In this paper we review the latest achievements of density functional theory in understanding the physics of diluted magnetic semiconductors. We focus on transition metal doped III-V semiconductors, which show spontaneous ferromagnetic order at relatively high temperature and good structural compatibility with existing III-V devices. We show that density functional theory is a very powerful tool for i) studying the effects of local doping defects and disorder on the magnetic properties of these materials, ii) predicting properties of new materials and iii) providing parameters, often not acces…
Since 2000, the intensive effort in materials research to develop a diluted magnetic semiconductor exhibiting high-temperature (HT) ferromagnetism above room temperature was not successful. Here, the possible first bulk diluted HT-ferromagnetic non-metallic materials, based on the perovskite-type oxynitrides LaTa1-xCox(O,N)3-d (x = 0.01, 0.03, 0.05) are realized. The Curie temperature of the synthesized powders exceeds 600 K and the sample magnetizations are large enough to be directly attracted by permanent magnets. Cobalt clusters as a possible source for the observed HT-ferromagnetism can b…
We discuss the influence of disorder on domain structure formation in ferromagnetic phase of diluted magnetic semiconductors (DMS) of p-type. Using analytical arguments we show the existence of critical ratio $ν_{\rm {cr}}$ of concentration of charge carriers and magnetic ions such that sample critical thickness $L_{\rm{cr}}$ (such that at $L<L_{\rm{cr}}$ a sample is monodomain) diverges as $ν\to ν_{\rm {cr}}$. At $ν> ν_{\rm {cr}}$ the sample is monodomain. This feature makes DMS different from conventional ordered magnets as it gives a possibility to control the sample critical thickness and …
The relationship between the modern and classical Landau's approach to carrier orbital magnetization is studied theoretically within the envelope function approximation, taking ferromagnetic (Ga,Mn)As as an example. It is shown that while the evaluation of hole magnetization within the modern theory does not require information on the band structure in a magnetic field, the number of basis wave functions must be much larger than in the Landau approach to achieve the same quantitative accuracy. A numerically efficient method is proposed, which takes advantages of these two theoretical schemes. …
We theoretically investigate impurity correlation and magnetic clustering effects on the long-range ferromagnetic ordering in diluted magnetic semiconductors, such as $\textrm{Ga}_{1-x}\textrm{Mn}_{x}\textrm{As}$, using analytical arguments and direct Monte Carlo simulations. We obtain an analytic formula for the ferromagnetic transition temperature $T_{c}$ which becomes asymptotically exact in the strongly disordered, highly dilute (i.e. small $x$) regime. We establish that impurity correlations have only small effects on $T_{c}$ with the neutrally correlated random disorder producing the nom…
Carrier-mediated ferromagnetism in a dilute magnetic semiconductor has been studied using i) a single-impurity based generalized RKKY approach which goes beyond linear response theory, and ii) a mean-field-plus-spin-fluctuation (MF+SF) approach within a (purely fermionic) Hubbard-model representation of the magnetic impurities, which incorporates dynamical effects associated with finite frequency spin correlations in the ordered state. Due to a competition between the magnitude of the carrier spin polarization and its oscillation length scale, the ferromagnetic spin coupling is found to be opt…
We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers are antiferromagnetic (AFM). When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is no…
In this pedagogical paper, the comparative analysis of two common approaches describing the ferromagnetic phase transition in diluted magnetic semiconductors (DMS) is expounded in terms of Weiss field approximation. Assuming a finite spin polarization of the magnetic ions, the treatment of carrier-ion exchange interaction in first order evokes the homogeneous Weiss molecular field that polarizes the spins of free carriers. In turn, this spin polarization of the free carriers exerts the effective field that may stabilize DMS spin polarization below a critical temperature Tc. The treatment of su…
Magnetic properties of the planar structure consisting of a ferromagnetic metal and the diluted magnetic semiconductor are considered (by the example of the structure Fe/Ga(Mn)As, experimentally studied in [F. Maccherozzi, e.a., Phys. Rev. Lett., 101, 267201 (2008)]). In the framework of the mean field theory, we demonstrate the presence of the significant amplification of the ferromagnetism, induced by the ferromagnetic metal in the near-interface semiconductor area, due to the indirect interaction of magnetic impurities. This results in the substantial expansion of the temperature range wher…
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.
Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit of magnetic ions in semiconductor host. In our study transition metal ions were implanted into ZnO single crystals with the peak concentrations of 0.5-10 at.%. We established a correlation between stru…
The presence of localized spins exerts a strong influence on quantum localization in doped semiconductors. At the same time carrier-mediated interactions between the localized spins are modified or even halted by carriers' localization. The interplay of these effects is discussed for II-VI and III-V diluted magnetic semiconductors. This insight is exploited to interpret the complex dependence of resistance on temperature, magnetic field, and concentration of valence-band holes in (Ga,Mn)As. In particular, high field negative magnetoresistance results from the orbital weak localization effect. …
We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used, in which the hole concentration p(x) is parametrized in terms of a fitting (of the hole effective mass and hole/local moment coupling) to experimental data on the Tc critical temperature. The dependence of the magnetizations with x, for a given temperature, presents a sharply peaked structure, with maxima increasing with applied magnetic field, which indica…
We study the effects of disorder in the vicinity of the ferromagnetic transition in a diluted magnetic semiconductor in the strongly localized regime. We derive an effective polaron Hamiltonian, which leads to the Griffiths phase above the ferromagnetic transition point. The Griffiths-McCoy effects yield non-perturbative contributions to the dynamic susceptibility. We explicitly derive the long-time susceptibility, which has a pseudo-scaling form, with the dynamic critical exponent being expressed through the percolation indices.
Chemical pressure is an effective method to tune physical properties, particularly for diluted magnetic semiconductors (DMS) of which ferromagnetic ordering is mediated by charge carriers. Via substitution of smaller Ca for larger Sr, we introduce chemical pressure on (Sr,Na)(Cd,Mn)2As2 to fabricate a new DMS material (Ca,Na)(Cd,Mn)2As2. Carriers and spins are introduced by substitutions of (Ca,Na) and (Cd,Mn) respectively. The unit cell volume reduces by 6.2% after complete substitution of Ca for Sr, suggesting a subsistent chemical pressure. Importantly the local geometry of [Cd/MnAs4] tetra…
We present results of a numerical mean field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Disorder is found to enhance the ferromagnetic transition temperature significantly for metallic densities not too far from the metal-insulator transition. Concurrently, the ferromagnetic phase is found to have very unusual temperature dependence of the magnetization as well as specific heat as a result of disorder. Unusual spin and charge transport is implied.
A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS (UFO). Perspectives and possible devi…
Regimes of optical transparency and instabilities of collinear dielectric ferromagnetic materials in the presence of the dynamic magnetoelectric effect
We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using solid source MBE. A high p-type doping with nitrogen can be achieved by using an RF-plasma source. BeMnTe and BeTe layers have been characterized by magneto-transport measurements. At low temperatures, the BeMnTe samples exhibit a large anomalous Hall effect. A hysteresis in the anomalous Hall effect appears below 2.5K in the most heavily doped sample, which…
In the framework of the generalized mean field theory, conditions for arising the ferromagnetic state in a two-dimensional diluted magnetic semiconductor and the features of that state are defined. RKKY-interaction of magnetic impurities is supposed. The spatial disorder of their arrangement and temperature alteration of the carrier degeneracy are taken into account.
In this paper the synthesis and study of the structural, morphological, electrical, magnetic and electronic properties of the LaBiFe2O6 novel material are reported. The material was produced using the standard ceramic method. The Rietveld analysis of experimental data of x-ray diffraction showed that it synthesizes in an orthorhombic perovskite structure (Pnma, #62 space group). Two types of grain, micro and submicrometric, with the LaBiFe2O6 stoichiometry were identified by scanning electron microscopy and X-ray dispersive spectroscopy. Results of electrical polarization and dielectric consta…
Layered ferromagnetic-piezoelectric composites show mechanical strain mediated electromagnetic coupling. Here we discuss dielectric and piezoelectric properties of ferrite-lead zirconate titanate (PZT) and lanthanum manganite-PZT samples. Results of our investigations on dielectric and pyroelectric properties of multilayer ferromagnetic-piezoelectric are presented here. Lead zircinate-titanate PbZrxTi1-xO3 (PZT) was used for the piezoelectric phase in all the structures. The following materials were used for the ferromagnetic component: nickel-zinc ferrites Ni0.9Zn 0.1Fe2O4 (NFO1) and Ni0.8Zn0…
We develop a theory for two-dimensional diluted magnetic semiconductor systems (e.g. $\textrm{Ga}_{1-x}\textrm{Mn}_{x}\textrm{As}$ layers) where the itinerant carriers mediating the ferromagnetic interaction between the impurity local moments, as well as the local moments themselves, are confined in a two-dimensional layer. The theory includes exact spatial disorder effects associated with the random local moment positions within a disordered RKKY lattice field theory description. We predict the ferromagnetic transition temperature ($T_{c}$) as well as the nature of the spontaneous magnetizati…
The ferromagnetic transition in a diluted magnetic semiconductor with localized charge carriers is inevitably a percolation transition. In this work we theoretically study the correlation between this magnetic percolation and transport properties of the sample, including the possibility of a simultaneous transport percolation. We find nontrivial signatures of the percolating magnetic clusters in the transport properties of the system, including interesting non-monotonic temperature dependence of the system resistivity.
We report the synthesis of alpha-Fe1.4Ga0.6O3 compound and present its structural phase stability and interesting magnetic, dielectric and photo-absorption properties. In our work Ga doped alpha-Fe2O3 samples are well stabilized in alpha phase (rhombohedral crystal structure with space group R3C). Properties of the present composition of Ga doped alpha-Fe2O3 system are remarkably advanced in comparison with recently most studied FeGaO3 composition. At room temperature the samples are typical soft ferromagnet, as well as direct band gap semiconductor. Dielectric study showed low dielectric loss…
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %. Magnetization measurements were carried out in magnetic fields parallel to the film surface up to 7 T. The magnetization process shows the coexistence of ferromagnetic and paramagnetic contributions at low temperatures, while the typical ferromagnetic magnetization process is mainly observed at high temperatures because of the decrease of the paramagnetic con…
