Local electronic structure of Cr in the II-VI diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te
M. Kobayashi, Y. Ishida, J. I. Hwang, G. S. Song, A. Fujimori, C. -S. Yang, L. Lee, H. -J. Lin, D. -J. Huang, C. T. Chen, Y. Takeda, S. -I. Fujimori, T. Okane, … 展开作者
M. Kobayashi, Y. Ishida, J. I. Hwang, G. S. Song, A. Fujimori, C. -S. Yang, L. Lee, H. -J. Lin, D. -J. Huang, C. T. Chen, Y. Takeda, S. -I. Fujimori, T. Okane, Y. Saitoh, H. Yamagami, K. Kobayashi, A. Tanaka, H. Saito, K. Ando
备注：
Accepted for New Journal of Physics. Single column, 21 pages, 7 figures
The electronic structure of the Cr ions in the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te ($x=0.03$ and 0.15) thin films has been investigated using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). Magnetic-field ($H$) and temperature ($T$) dependences of the Cr $2p$ XMCD spectra well correspond to the magnetization measured by a SQUID magnetometer. The line shape of the Cr $2p$ XMCD spectra is independent of $H$, $T$, and $x$, indicating that the ferromagnetism is originated from the same electronic states of the Cr ion. Cluster-model analysis indicates that although there are two or more kinds of Cr ions in the Zn$_{1-x}$Cr$_x$Te samples, the ferromagnetic XMCD signal is originated from Cr ions substituted for the Zn site. The Cr 3d partial density of states extracted using Cr $2p \to 3d$ resonant PES shows a broad feature near the top of the valence band, suggesting strong $s$,$p$-$d$ hybridization. No density of states is detected at the Fermi level, consistent with their insulating behavior. Based on these findings, we conclude that double exchange mechanism cannot explain the ferromagnetism in Zn$_{1-x}$Cr$_{x}$Te.
We propose a method to realize diluted magnetic semiconductors (DMS) with p- and n-type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2, which has a band gap of 0.2 eV. In addition, we found a new non-toxic DMS Mn-doped BaZn2Sb2, of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2, the Tc of which was up to 230 K in the recent experiment.
A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS (UFO). Perspectives and possible devi…
A new diluted magnetic semiconductor system, (Sr3La2O5)(Zn1-xMnx)2As2, has been synthesized and characterized. 10% Mn substitution for Zn in bulk form (Sr3La2O5)Zn2As2 results in a ferromagnetic ordering below Curie temperature, TC ~ 40 K. (Sr3La2O5)(Zn1-xMnx)2As2 has a layered crystal structure identical to that of 32522-type Fe based superconductors, and represents the fifth DMS family that has a direct counterpart among the FeAs high temperature superconductor families.
Here we report the synthesis of a bulk oxide diluted magnetic semiconductor (DMS) system La1-xSrxCu0.925Mn0.075SO (x=0, 0.025, 0.05, 0.075, and 0.1). As a wide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditions forecasted theoretically to be a room temperature DMS. The Curie temperature (TC) is around 200K as x>0.05, which is among the highest TC record of known bulk DMS materials up to now. The system provides a rare example of oxide DMS system with p-type conduction, which is important for formation of high temperature spintronic devices.
(La1-xSrx)(Zn1-yMny)AsO is a two dimensional diluted ferromagnetic semiconductor that has the advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into the parent semiconductor LaZnAsO introduces hole carriers and spins, respectively. This advantage enables us to investigate the influence of carrier doping on the ferromagnetic ordered state through the control of Sr concentrations in (La1-xSrx)(Zn0.9Mn0.1)AsO. 10 % Sr doping results in a ferromagnetic ordering below TC ~ 30 K. Increasing Sr concentration up to 30 % heavily suppresses the Curie temp…
This paper reviews the present understanding of the origin of ferromagnetic response of diluted magnetic semiconductors and diluted magnetic oxides as well as in some nominally magnetically undoped materials. It is argued that these systems can be grouped into four classes. To the first belong composite materials in which precipitations of a known ferromagnetic, ferrimagnetic or antiferromagnetic compound account for magnetic characteristics at high temperatures. The second class forms alloys showing chemical nano-scale phase separation into the regions with small and large concentrations of t…
We report the synthesis and characterization of bulk form diluted magnetic semiconductors Ba(Zn1-2xMnxCox)2As2 (0 <= x <= 0.15) with a crystal structure identical to that of 122-type Fe-based superconductors. Mn and Co co-doping into the parent compound BaZn2As2 results in a ferromagnetic ordering below TC ~ 80 K. Hall effect measurements indicate that the carrier are n-type with the density of ~10^17/cm3. The common crystal structure and excellent lattice matching between the p-type ferromagnetic (Ba1-yKy)(Zn1-xMnx)2As2, the n-type ferromagnetic Ba(Zn1-2xMnxCox)2As2, the antiferrmagnetic BaMn…
We report the synthesis and characterization of bulk form diluted magnetic semiconductors I-II-V Li1.1(Zn1-xCrx)As (x = 0.03, 0.05, 0.10, 0.15)with a cubic crystal structure identical to that of III-V GaAs and II-VI zinc-blende ZnSe. With p-type carriers created by excess Li, 10% Cr substitution for Zn results in a ferromagnetic ordering below TC ~ 218 K. Li(Zn,Cr)As represents another magnetic semiconducting system with the advantage of decoupling carriers and spins, where carriers are created by adding extra Li and spins are introduced by Cr substitution for Zn.
We have performed x-ray magnetic circular dichroism (XMCD) and valence-band photoemission studies of the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te. XMCD signals due to ferromagnetism were observed at the Cr 2p absorption edge. Comparison with atomic multiplet calculations suggests that the magnetically active component of the Cr ion was divalent under the tetrahedral crystal field with tetragonal distortion along the crystalline a-, b-, and c-axes. In the valence-band spectra, spectral weight near the Fermi level was strongly suppressed, suggesting the importance of Jahn-Teller ef…
The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed.
Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral reported for GaAs:Mn arises from exchange interactions between electrons and holes bound to Mn acceptors. This interaction dominates over the coupling between electrons and Mn spins, so far regarded as the main source of spin-dependent phenomena. A reduced magnitude of the apparent s-d exchange integral found in n-type materials is explained by the presence of repu…
The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstitial Zn. Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results demonstrate for the first time reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, and present new opportunities for integrating magnetism and conductivity in semiconductor…
In the framework of the generalized mean field theory, conditions for arising the ferromagnetic state in a two-dimensional diluted magnetic semiconductor and the features of that state are defined. RKKY-interaction of magnetic impurities is supposed. The spatial disorder of their arrangement and temperature alteration of the carrier degeneracy are taken into account.
There are two competing views of itinerant ferromagnetism, the first viewing ferromagnetism as resulting from the indirect coupling between local moments via the itinerant carrier dynamics, the so-called RKKY mechanism, while in the alternative picture, ferromagnetism results from the spin polarization of itinerant carriers by the strong atomic Hund interaction - the so-called double exchange (DE) scenario. Which view describes the ferromagnetism in diluted magnetic semiconductors, materials with promise for spintronic applications, is still unclear. Here, we describe the detailed physical res…
Being a wide band gap system GaMnN attracted considerable interest after the discovery of highest reported ferromagnetic transition temperature $T_C$ $\sim$ 940 K among all diluted magnetic semiconductors. Later it become a debate due to the observation of either a ferromagnetic state with very low $T_C$ $\sim$ 8 K or sometimes no ferromagnetic state at all. We address these issues by calculating the ferromagnetic window, $T_C$ Vs $p$, within a $t-t'$ Kondo lattice model using a spin-fermion Monte-Carlo method on a simple cubic lattice. We exploit the next-nearest-neighbor hopping $t'$ to tune…
The ferromagnetic transition in a diluted magnetic semiconductor with localized charge carriers is inevitably a percolation transition. In this work we theoretically study the correlation between this magnetic percolation and transport properties of the sample, including the possibility of a simultaneous transport percolation. We find nontrivial signatures of the percolating magnetic clusters in the transport properties of the system, including interesting non-monotonic temperature dependence of the system resistivity.
Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work (G. Alvarez, Phys. Rev. Lett. 89, 277202 (2002)) where the static properties of the model were studied. The present results support the view that the relevant regime of J/t (standard notation) is that of intermediate coupling, where carriers are only partially trapped near Mn spins, and locally ordered regions (clusters) are present above the Curie temperature T_C…
We consider a mean-field approach to the hole-mediated ferromagnetism in III-V Mn-based semiconductor compounds to discuss the dependence of the hole density on that of Mn sites in Ga_{1-x}Mn_xAs. The hole concentration, p, as a function of the fraction of Mn sites, x, is parametrized in terms of the product m*J_{pd}^2 (where m* is the hole effective mass and J_{pd} is the Kondo-like hole/local-moment coupling), and the critical temperature Tc. By using experimental data for these quantities, we have established the dependence of the hole concentration with x, which can be associated with the …
The continual model of the nonuniform magnetism in thin films and wires of a diluted magnetic semiconductor is considered with taking into account the finite spin polarization of carriers responsible for the indirect interaction of magnetic impurities (e.g. via RKKY mechanism). Spatial distributions (across the film thickness or the wire radius) of the magnetizaton and carrier concentrations of different spin orientations, as well as the temperature dependence of the average magnetization are determined as the solution of the nonlinear integral equation.
Magneto-optical properties of ZnO:Co and ZnO:Ni films were measured. Magnetization measurements show that some of the films are paramagnetic and others are ferromagnetic. Magnetic circular dichroism clarified that Zn1-xCoxO and Zn1-xNixO included in samples are paramagnetic diluted magnetic semiconductors. Ferromagnetic precipitations seem to be responsible for the observed ferromagnetic behaviors. Criteria to judge the ferromagnetic DMS are also discussed.
Magnetic properties of the planar structure consisting of a ferromagnetic metal and the diluted magnetic semiconductor are considered (by the example of the structure Fe/Ga(Mn)As, experimentally studied in [F. Maccherozzi, e.a., Phys. Rev. Lett., 101, 267201 (2008)]). In the framework of the mean field theory, we demonstrate the presence of the significant amplification of the ferromagnetism, induced by the ferromagnetic metal in the near-interface semiconductor area, due to the indirect interaction of magnetic impurities. This results in the substantial expansion of the temperature range wher…
We show that in strong (quantizing) magnetic fields "ordinary" free magnetic polaron in diluted magnetic semiconductors (of type $A^2MeB^6$, where Me=Fe, Mn) exists in the form of vortex lattice quite similar to that in type II superconductors (Abricosov vortex lattice). The region of external parameters (like external magnetic field and temperature), where such lattice exists, is determined from the condition that lattice dimension is less or equal to polaron localization radius.
Recently a new type diluted magnetic semiconductor (BaK)(ZnMn)2As2 (BZA) with high Cure temperature (Tc) was discovered showing independent spin and charge doping mechanism. This makes BZA a promising material for spintronics devices. Here we report for the first time the successful growth of BZA single crystal. An Andreev reflection junction that can be used to evaluate spin polarization was fabricated based on the BZA single crystal, a 66% spin polarization of the BZA single crystal was hence obtained by Andreev reflection spectroscopy analysis.
We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers are antiferromagnetic (AFM). When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is no…
We theoretically study the development of spontaneous magnetization in diluted magnetic semiconductors as arising from a percolation of bound magnetic polarons. Within the framework of a generalized percolation theory we derive analytic expressions for the Curie temperature and the magnetization, obtaining excellent quantitative agreement with Monte Carlo simulation results and good qualitative agreement with experimental results.
Diluted magnetic semiconductors (DMS) like Ga$_{1-x}$Mn$_{x}$As are described by a realistic tight-binding model (TBM) for the (valence) bands of GaAs, by a Zener (J-)term modeling the coupling of the localized Mn-spins to the spins of the valence band electrons, and by an additional potential scattering (V-) term due to the Mn-impurities. We calculate the effective (Heisenberg) exchange interaction between two Mn-moments mediated by the valence electrons. The influence of the number of bands taken into account (6-band or 8-band TBM) and of the potential (impurity) scattering V-term is investi…
The mean-field theory represents a useful starting point for studying carrier-induced ferromagnetism in Mn$_x$III$_{1-x}$V diluted magnetic semiconductors. A detail description of these systems requires to include correlations in the many-body hole system. We discuss the effects of correlations among itinerant carriers on magnetic properties of bulk Mn$_x$III$_{1-x}$V and magnetic semiconductor quantum wells. Presented results were obtained using parabolic band approximation and we also derive a many-body perturbation technique that allows to account for hole-hole correlations in realistic sem…
IV-VI diluted magnetic semiconductor Ge1-xCrxTe layers up to x=0.1 were grown on SrF2 substrates by molecular beam epitaxy. In site reflection high-energy electron diffraction shows a streaky pattern with sixfold symmetry in the plane for the Ge1-xCrxTe layer, implying an epitaxial growth of Ge1-xCrxTe [111]/SrF2 [111]. A clear hysteresis loop is observed in the anomalous Hall effect measurements due to the strong spin-orbit interaction in the host GeTe. The Curie temperature increases with increasing Cr composition up to 200 K, but there is no clear dependence of the Curie temperature on the …
In a diluted magnetic semiconductor system, the exchange interaction between magnetic impurities has two independent components: a direct antiferromagnetic interaction and a ferromagnetic interaction mediated by charge carriers. Depending on the system parameters, the ground state of the system may be ordered either ferromagnetically or randomly. In this paper we use percolation theory to find the ferromagnetic transition temperature and the location of the quantum critical point separating the ferromagnetic phase and a valence bond glass phase.
Employing the self-consistent Green's function approach, we studied the temperature dependence of the spin-wave stiffness in diluted magnetic semiconductors. Note that the Green's function approach includes the spatial and temperature fluctuations simultaneously which was not possible within conventional Weiss mean-field theory. It is rather interesting that we found the stiffness becomes dramatically softened as the critical temperature is approached, which seems to explain the mysterious sharp drop of magnetization curves in samples within diffusive regime.
A new diluted ferromagnetic semiconductor (Sr,Na)(Zn,Mn)2As2 is reported, in which charge and spin doping are decoupled via Sr/Na and Zn/Mn substitutions, respectively, being distinguished from classic (Ga,Mn)As where charge & spin doping are simultaneously integrated. Different from the recently reported ferromagnetic (Ba,K)(Zn,Mn)2As2, this material crystallizes into the hexagonal CaAl2Si2-type structure. Ferromagnetism with a Curie temperature up to 20 K has been observed from magnetization. The muon spin relaxation measurements suggest that the exchange interaction between Mn moments of th…
Chemical pressure is an effective method to tune physical properties, particularly for diluted magnetic semiconductors (DMS) of which ferromagnetic ordering is mediated by charge carriers. Via substitution of smaller Ca for larger Sr, we introduce chemical pressure on (Sr,Na)(Cd,Mn)2As2 to fabricate a new DMS material (Ca,Na)(Cd,Mn)2As2. Carriers and spins are introduced by substitutions of (Ca,Na) and (Cd,Mn) respectively. The unit cell volume reduces by 6.2% after complete substitution of Ca for Sr, suggesting a subsistent chemical pressure. Importantly the local geometry of [Cd/MnAs4] tetra…
We studied the diluted magnetic semiconductor by the self-consistent Green's function approach, which treats the spin-wave kinematics appropriately at finite temperatures. The critical temperature can be obtained by a simple formula in a wide range of parameter space. In addition, the magnetization curve versus temperature is concave, which is dramatically different from the usual convex shape. Finally, we discuss the possibility of generalizing the current theory to include the realistic band structure, electronic correlations and disorders in a systematic way.
We report the synthesis and characterization of a bulk diluted magnetic semiconductor (La1-xBax)(Zn1-xMnx)AsO (0 <= x <= 0.2) with a layered crystal structure identical to that of the "1111" FeAs superconductors. No ferromagnetic order occurs for (Zn,Mn) substitution in the parent compound LaZnAsO without charge doping. Together with carrier doping via (La,Ba) sub- stitution, a small amount of Mn substituting for Zn results in ferromagnetic order with TC up to ~40 K, although the system remains semiconducting. Muon spin relaxation measurements confirm the development of ferromagnetic order in …
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese concentrations x=3.7 % and 4.0 %. Curie temperatures estimated from temperatures of peak resistivities were 60 K and 62 K, respectively.
We report the discovery of a new diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off-stoichiometry and the isovalent substitution of Mn2+ for Zn2+, respectively. Isostructural to (Ga,Mn)As, Li(Zn,Mn)P was found to be a p-type ferromagnetic semiconductor with excess Lithium providing charge doping. First principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole doping. Ferromagnetism is mediated in semiconducting samples of relative low mobile carriers with a small coercive force, ind…
Europium nitride is semiconducting and contains non-magnetic \3+, but sub-stoichiometric EuN has Eu in a mix of 2+ and 3+ charge states. We show that at \2+ ~concentrations near 15-20% EuN is ferromagnetic with a Curie temperature as high as 120 K. The \3+ ~polarization follows that of the \2+, confirming that the ferromagnetism is intrinsic to the EuN which is thus a novel diluted magnetic semiconductor. Transport measurements shed light on the likely exchange mechanisms.
We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric function is calculated within the random phase approximation and, within this metallic regime, we treat disorder effects perturbatively and thermal effects within the mean field approximation. We also discuss the implications of this calculations on carrier concentration measurements from the optical f-sum rule and the analysis of plasmon-phonon cou…
Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements in a semiconductor lattice, can become ferromagnetic when doped. In this article we discuss the physics of DMS ferromagnetism in systems with semiconductor heterojunctions. We focus on the mechanism that cause magnetic and magnetoresistive properties to depend on doping profiles, defect distributions, gate voltage, and other system parameters that can in principle be engineered to yield desired results.
High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V_N). Calculated results are in agreement with experimental observations and facts of real Cr-do…
We present a theoretical study of diluted magnetic semiconductors that treats the local sp-d exchange interaction J between the itinerant carriers and the Mn d electrons within a realistic band structure and goes beyond previous mean-field approaches. In case of (Ga,Mn)As, we find that strong exchange potentials tightly bind carriers near impurity sites. Spin-orbit coupling is found to have a more pronounced effect on spin polarization at weak coupling and this feature can be exploited for magnetotransport. For low doping regime, we predict that spin-orbit coupling splits impurity bands and ca…
We investigate the compositional dependence of the total energy of the mixed crystals (Ga,Mn)As co-doped with As, Sn, and Zn. Using the ab initio LMTO-CPA method we find a correlation between the incorporation of acceptors (Mn, Zn) and donors (Sn, antisite As). In particular, the formation energy of As_Ga is reduced by approx. 0.1 eV in the presence of Mn, and vice versa. This leads to the self-compensating behavior of (Ga,Mn)As.
The magnetic interaction of a pair of bound magnetic polarons (BMP) in diluted magnetic semiconductors (DMS) is analyzed via a generalized Hubbard-type Hamiltonian for two carriers in the presence of effective magnetic fields arising from the magnetic polarization of their respective polarons. For the case where the magnetic fields at the two sites have equal magnitude but are allowed to have arbitrary directions, it is shown that the energy of the two polarons is minimized for a ferromagnetic configuration of the carrier spins (in contrast to the case of hydrogenic centers in nonmagnetic semi…
We employ a self-consistent Green's function approach to investigate the spin-wave relaxation Γ(p) in diluted magnetic semiconductors. We find the trend of the spin-wave relaxation strongly depends on the ratio of the itinerant and impurity spin densities. For density ratios in the Ruderman-Kittel-Kasuya-Yosida phase, Γ(p) decreases even though thermal fluctuations increase. On the other hand, in the strong coupling phase, an interesting peak structure appears. We discuss the implications of our numerical results for experiments.
We show that the magnetization dynamics in diluted magnetic semiconductors can be controlled separately from the static magnetization by means of an electric field. The spin-lattice relaxation (SLR) time of magnetic Mn2+ ions was tuned by two orders of magnitude by a gate voltage applied to n-type modulation-doped (Zn,Mn)Se/(Zn,Be)Se quantum wells. The effect is based on providing an additional channel for SLR by a two-dimensional electron gas (2DEG). The static magnetization responsible for the giant Zeeman spin splitting of excitons was not influenced by the 2DEG density.
It is predicted that III-V diluted magnetic semiconductors can exhibit stripe-like modulations of magnetization and carrier concentration. This inhomogeneity results from the strong dependence of the magnetization on the carrier concentration. Within Landau theory, a characteristic temperature T* below the Curie temperature is found so that below T* the equilibrium magnetization shows modulations, which are strongly anharmonic. Wavelength and amplitude of the modulation rise for decreasing temperature, starting from zero at T*. Above T* the equilibrium state is homogeneous, but the coupling be…
Influence of disorder on the ferromagnetic phase transition in diluted (III,Mn)V semiconductors is investigated analytically. The regime of small disorder is addressed, and the enhancement of the critical temperature by disorder is found both in the mean field approximation and from the analysis of the zero temperature spin stiffness. Due to disorder, the spin wave fluctuations around the ferromagnetically ordered state acquire a finite mass. At large charge carrier band width, the spin wave mass squared becomes negative, signaling the breakdown of the ferromagnetic ground state and the onset …
We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The developed theory assumes that main channel of spin relaxation is mobile carriers providing indirect interactions between magnetic impurities. Our theoretical model is supported by experimental measurements of manganese spin relaxation time in GaMnAs by means of spin-flip Raman scattering. It is found that with temperature increase spin relaxation rate of ferromagnet…
We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of carrier density and temperature. We find a large (about 0.1 eV) band gap renormalization which is enhanced by the ferromagnetic transition. We also calculate the impurity scattering effect on the gap narrowing. We suggest that the temperature, magnetization, and density dependent band gap renormalization could be used as an experimental probe to determine the va…
A close link between the charge transfer electronic structures and polarity dependent high-TC ferromagnetism of TM2+:ZnO DMSs (TM2+ = 3d ions) is demonstrated. Trends in ferromagnetism across the 3d series of TM2+:ZnO DMSs predicted from their charge transfer energies reproduce experimental trends well. These results provide a unified basis for understanding both n- and p-type ferromagnetic oxide DMSs.
A bulk diluted magnetic semiconductor was found in the K and Mn co-doped BaCd2As2 system. Different from recently reported tetragonal ThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2 system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming a honeycomb-like network. The Mn concentration reaches up to its x ? 0.4. Magnetization measurements show that the samples undergo ferromagnetic transitions with Curie temperature up to 16 K. With low coercive field less than 10 Oe and large magnetoresistence of about -70%, the hexagonal structured Ba1-yKyCd2-xMn…
Motivated by recent measurements of electron paramagnetic resonance (EPR) spectra in modulation-doped CdMnTe quantum wells, [F.J. Teran {\it et al.}, Phys. Rev. Lett. {\bf 91}, 077201 (2003)], we develop a theory of collective spin excitations in quasi-two-dimensional diluted magnetic semiconductors (DMSs). Our theory explains the anomalously large Knight shift found in these experiments as a consequence of collective coupling between Mn-ion local moments and itinerant-electron spins. We use this theory to discuss the physics of ferromagnetism in (II,Mn)VI quantum wells, and to speculate on th…
In diluted magnetic semiconductors, the carrier concentration and the magnetization of local moments are strongly coupled, since the magnetic interaction is mediated by the carriers. It is predicted that this coupling leads to an electric polarization due to an applied magnetic-field gradient and to the appearance of a magnetic-field-dependent voltage. An expression for this voltage is derived within Landau theory and its magnitude is estimated for (Ga,Mn)As. Furthermore, a large contribution to the thermopower based on the same mechanism is predicted. The role of fluctuations is also discusse…
Using Dynamical Mean Field Theory (DMFT) and Monte Carlo (MC) simulations, we study the ferromagnetic transition temperature Tc of a two-band model for Diluted Magnetic Semiconductors (DMS), varying coupling constants, hopping parameters, and carrier densities. We found that Tc is optimized at all fillings p when both impurity bands (IB) fully overlap in the same energy range, namely when the exchange couplings J and bandwidths are identical. The optimal Tc is found to be about twice larger than the maximum value obtained in the one-band model, showing the importance of multiband descriptions …
This paper is an attempt to modify the classic Ruderman-Kittel-Kasuya-Yosida (RKKY) model to allow the analysis of the magnetic resonance measurements. In our calculations, we follow the treatment of the original authors of the RKKY model but include the finite band splitting, Δ, as a phenomenological parameter. The RKKY exchange is not anymore of Heisenberg type and an anisotropy induced by the direction of carrier magnetization occurs.
We study the effects of disorder in the vicinity of the ferromagnetic transition in a diluted magnetic semiconductor in the strongly localized regime. We derive an effective polaron Hamiltonian, which leads to the Griffiths phase above the ferromagnetic transition point. The Griffiths-McCoy effects yield non-perturbative contributions to the dynamic susceptibility. We explicitly derive the long-time susceptibility, which has a pseudo-scaling form, with the dynamic critical exponent being expressed through the percolation indices.
In recent years, disorder has been shown to be crucial for the understanding of diluted magnetic semiconductors. Effects of disorder in these materials are reviewed with the emphasis on theoretical works. The types and spatial distribution of defects are discussed. The effect of disorder on the intimately related transport and magnetic properties are considered from the viewpoint of both the band picture and the isolated-impurity approach. Finally, the derivation and properties of spin-only models are reviewed.
The carrier spin and impurity spin densities in diluted magnetic semiconductors are considered using a semiclassical approach. Equations of motions for the spin densities and the carrier spin current density in the paramagnetic phase are derived, exhibiting their coupled diffusive dynamics. The dynamical spin susceptibilities are obtained from these equations. The theory holds for p-type and n-type semiconductors doped with magnetic ions of arbitrary spin quantum number. Spin-orbit coupling in the valence band is shown to lead to anisotropic spin diffusion and to a suppression of the Curie tem…
