低载流子浓度下稀磁半导体的磁化率
Magnetic susceptibility of diluted magnetic semiconductors at low carrier densities
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中文总结 AI 辅助
该研究采用随机相位近似，针对低载流子浓度的(III,Mn)V型稀磁半导体，计算了其静态纵向和横向动态磁化率，发现磁化率对Mn杂质位置无序敏感，结果与前期相关研究一致。
中文摘要 AI 辅助
针对适用于低电荷载流子浓度 regime 的简单杂质带模型，采用随机相位近似（random phase approximation）计算了(III,Mn)V型稀磁半导体的静态纵向和横向动态磁化率。结果表明，磁化率对Mn杂质的位置无序程度敏感依赖，所得结果与该材料自旋波谱及空间非均匀铁磁态的前期研究一致。
英文摘要
We calculate the static longitudinal and the transverse dynamic magnetic susceptibilities of (III,Mn)V diluted magnetic semiconductors, using the random phase approximation, for a simple impurity band model appropriate for the low charge carrier concentration regime. The magnetic susceptibilities are shown to depend sensitively on the amount of positional disorder of the Mn impurities. The results we obtain are consistent with previous studies of the spin wave spectrum and of the spatially inhomogeneous ferromagnetic state of these materials.
