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arXiv 0802.0407cond-mat.mes-hall
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电场作用下双层石墨烯中的电子离域

Electron delocalization in bilayer graphene induced by an electric field

Mikito Koshino

摘要:

对具有电场诱导能隙的无序双层石墨烯中的电子局域化进行了数值研究。双层石墨烯是一种零能隙半导体,其中能隙可以被垂直于层平面的外部电场打开和控制。我们发现,在光滑无序势中,在不同的谷(K和K'点)的状态不混合,间隙打开导致相变,在该电子局域长度发散。我们表明,这可以解释为整数量子霍尔跃迁在每个单一的谷,即使磁场是缺席。

英文摘要:

Electronic localization is numerically studied in disordered bilayer graphene with an electric-field induced energy gap. Bilayer graphene is a zero-gap semiconductor, in which an energy gap can be opened and controlled by an external electric field perpendicular to the layer plane. We found that, in the smooth disorder potential not mixing the states in different valleys (K and K' points), the gap opening causes a phase transition at which the electronic localization length diverges. We show that this can be interpreted as the integer quantum Hall transition at each single valley, even though the magnetic field is absent.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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