We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and bias. Discussion of experiments is based on relativistic ab initio calculations of magnetization orientation dependent densities of states of Co and Co/Pt model systems.
The effect of the AlOx barrier thickness on magnetic and morphological properties of Ta/Co/(AlOx)/Alq3/Si hybrid structures was systematically studied by means of atomic force microscopy, SQUID magnetometry and nuclear magnetic resonance (NMR). All used techniques pointed out that the barrier thickness of 2 nm is required to obtain a magnetically good cobalt layer on top of Alq3. 59Co NMR measurements revealed that the AlOx barrier gives rise to the formation of an interface layer with "defective" cobalt favouring growth of "bulk" cobalt with good magnetic properties.
We study the dependence of perpendicular-current magnetoresistance in magnetic multilayers on the angle between the magnetizations of the layers. This dependence varies with the thickness of one of the layers, and is different for multilayers with two and three magnetic layers. We derive a system of equations representing an extension of the two-current series resistor model, and show that the angular dependence of magnetoresistance gives information about the noncollinear spin-transport in ferromagnets.
Advancement of molecular devices will critically depend on the approach to establish electrical connections to the functional molecule(s). We produced a molecular device strategy which is based on chemically attaching of molecules between the two magnetic/nonmagnetic metallic electrodes along the multilayer edge(s) of a prefabricated tunnel junction. Here, we present the fabrication methodology for producing these multilayer edge molecular electronics/spintronics devices (MEMEDs/MEMSDs) and details of the associated challenges and their solutions. The key highlight of our MEMED/MEMSD approach …
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving increased magnetoresistance. Second, we insert a spacer with a short spin-diffusion length between the magnetic layers, decreasing the magnetoresistance. Third, we vary the angle between layer magnetizations. In all cases, we find an approximately linear dependence between magnetoresistance and inverse switching current. We give a qualitative …
Two classes of spin-orbit coupling (SOC) mechanisms have been considered as candidate sources for the spin orbit torque (SOT): the spin Hall Effect (SHE) in heavy metals with strong SOC and the Rashba effect arising from broken inversion symmetry at material surfaces and interfaces. In this work, we have investigated the SOT in perpendicularly magnetized Pt/Co/W films, which is compared with the results in Pt/Co/AlOx films. Theoretically, in the case of the asymmetric structure of trilayers with opposite sign of spin Hall angle, both damping like torque and field like torque due to the SHE and…
Using temperature-dependent magnetoresistance and magnetization measurements on Fe/Cr multilayers that exhibit pronounced giant magnetoresistance (GMR), we have found evidence for the presence of a glassy antiferromagnetic (GAF) phase. This phase reflects the influence of interlayer exchange coupling (IEC) at low temperature (T < 140K) and is characterized by a field-independent glassy transition temperature, Tg, together with irreversible behavior having logarithmic time dependence below a "de Almeida and Thouless" (AT) critical field line. At room temperature, where the GMR effect is still r…
The interfacial Dyzaloshinskii-Moria interaction (DMI) helps to stabilize chiral domain walls and magnetic skyrmions, which will facilitate new magnetic memories and spintronics logic devices. The study of interfacial DMI in perpendicularly magnetized structurally asymmetric heavy metal (HM) / ferromagnetic (FM) multilayer systems is of high importance due to the formation of chiral magnetic textures in the presence of DMI. Here, we report the impact of the cobalt oxidation at the cobalt -aluminum oxide interface in Pt/Co/AlOx trilayer structure on the DMI by varying the post-growth annealing …
No systematic studies have been carried out on the giant magnetoresistance (GMR) of electrodeposited (ED) Fe-Co/Cu multilayers since the elaboration of a method for the optimization of the Cu layer deposition potential. In this paper, we present results on the electrochemical optimization of the Cu layer deposition potential which was found to depend on the relative iron concentration in the bath. An X-ray diffraction study of ED Fe5Co95(1.5 nm)/Cu(dCu) multilayers with dCu ranging from 0.8 nm to 10 nm revealed an fcc structure. For most of the multilayers, a weak superlattice satellite reflec…
We study the role of diamagnetic effects on the transport properties of metallic magnetic multilayers to elucidate whether they can explain the Giant Magnetoresistance (GMR) effect observed in those systems. Realistic Fermi surface topologies in layered ferromagnets are taken into account, with the possibilities of different types of orbits depending on the electron spin. Both configurations, with ferromagnetic and anti-ferromagnetic couplings between magnetic layers, are considered and the transmission coefficient for scattering at the interface boundary is modelled to include magnetic and ro…
The giant magnetoresistance (GMR) effect has been widely investigated on electrodeposited ferromagnetic/non-magnetic (FM/NM) multilayers generally containing a large number of bilayers. In most applications of the GMR effect, layered structures consisting of a relatively small number of consecutive FM and NM layers are used. It is of great interest, therefore, to investigate the initial stages of GMR multilayer film growth by electrodeposition. In the present work we have extended our previous studies on ED GMR multilayers to layered structures with a total thickness ranging from a few nanomet…
The giant magnetoresistance (GMR) was investigated for electrodeposited Co/Cu multilayers. In order to better understand the formation of individual layers and their influence on GMR, multilayers produced by two different deposition strategies were compared. One series of Co(2 nm)/Cu(tCu) multilayers with tCu ranging from 0.5 nm to 6 nm was produced with the conventional two-pulse plating by using a galvanostatic/potentiostatic (G/P) pulse combination for the magnetic/non-magnetic layer deposition, respectively, whereby the Cu layer deposition was carried out at the electrochemically optimized…
A detailed study of the evolution of the magnetoresistance was performed on electrodeposited Co/Cu multilayers with Cu layer thicknesses ranging from 0.5 nm to 4.5 nm. For thin Cu layers (up to 1.5 nm), anisotropic magnetoresistance (AMR) was observed whereas multilayers with thicker Cu layers exhibited clear giant magnetoresistance (GMR) behaviour. The GMR magnitude increased up to about 3.5 to 4 nm Cu layer thickness and slightly decreased afterwards. According to magnetic measurements, all samples exhibited ferromagnetic (FM) behaviour. The relative remanence turned out to be about 0.75 for…
Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.
We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered [(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates. In the multilayers where n=5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN, t(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, with increasing t(TaN), the values of coercivity, grain size, and amplitude of maximum magnetoresistance (MR) of the samples all decrease first and then increase after reaching a minimum when t(TaN) is around 2.0-4.0 nm. This trend is also associated with an evolution of in-plane magnetic anisotrop…
Room-temperature transport properties (the zero-field resistivity, ρ0, and the GMR) were studied for ED Ni50Co50/Cu multilayers as a function of the individual layer thicknesses and total multilayer thickness. The Cu deposition potential was optimized in order to obtain the preset layer thicknesses. The surface roughness development was studied by AFM, which revealed an exponential roughening with total thickness. The Cu layer thickness strongly influenced the roughness evolution. As expected, ρ0 decreased with increasing Cu layer thickness whereas it increased strongly for large total multila…
The giant magnetoresistance (GMR) and structure was investigated for electrodeposited Co/Cu multilayers prepared by a conventional galvanostatic/potentiostatic pulse combination from a pure sulfate electrolyte with various layer thicknesses, total multilayer thickness and Cu deposition potential. X-ray diffraction (XRD) measurements revealed superlattice satellite reflections for many of the multilayers having sufficiently large thickness (at least 2 nm) of both constituent layers. The bilayer repeats derived from the positions of the visible superlattice reflections were typically 10-20% high…
The magnetothermopower and the magnetoresistance of single Co Ni/Cu multilayered nan-owires with various thicknesses of the Cu spacer are investigated. Both kinds of measurement have been performed as a function of temperature (50 K to 325 K) and under applied magnetic fields perpendicular to the nanowire axis, with magnitudes up to 15 % at room temperature. A linear relation between thermopower S and electrical conductivity σ of the nanowires is found, with the magnetic field as an implicit variable. Combining the linear behavior of the S vs. σ and the Mott formula, the energy derivative of t…
Colossal enhancement of magnetoresistance has been achieved over a broad temperature range which extends upto the room temperature, in ferromagnetic metal-charge ordered insulator manganite multi-layers. The artificially created phase coexistence in the multilayers reproduce the characteristic signatures of metastability in the magnetotransport properties commonly observed in electronically phase-separated manganites.
It has been shown previously for electrodeposited Co/Cu multilayers that the single-bath electrodeposition process can be optimized from an electrochemical point of view in order to avoid unwanted Co dissolution and incorporation of Co in the non-magnetic layer during the Cu deposition pulse. In the present work, electrodeposition of Ni-Co/Cu multilayers has been studied to clarify if the same optimization method is appropriate when two magnetic elements are present and if this potential results in the largest giant magnetoresistance (GMR) for the particular alloy system studied. For this purp…
The metal-insulator transition temperature in CMR manganites has been altered and brought close to the room temperature by preparing La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO)/ Nd$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (NSMO) multilayers with ultra thin individual layers of LSMO and NSMO. The LSMO/NSMO multilayers with ultra thin individual layers of thickness of about $10Å$ exhibits 150% magnetoresistance at 270 K whereas LSMO/NSMO multilayers with moderate individual layer thickness of about $40Å$ each exhibits a mere 15% magnetoresistance at the same temperature. We have shown that the reduction in thick…
Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with …
The effect of disorder on the perpendicular magnetoresistance of magnetic multilayers is investigated theoretically. Various kinds of disorder are considered: (i) interface substitutional disorder and (ii) bulk disorder in the various layers and in the leads. The calculations are based upon the non-equilibrium Green's function formalism, together with the recursion method for calculating the real-space Green's function.
We report on the experimental results of interlayer magnetoresistance in multilayer massless Dirac fermion system $α$-(BEDT-TTF)$_2$I$_3$ under hydrostatic pressure and its interpretation. We succeeded in detecting the zero-mode Landau level (n=0 Landau level) that is epected to appear at the contact points of Dirac cones in the magnetic field normal to the two-dimensional plane. The characteristic feature of zero-mode Landau carriers including the Zeeman effect is clearly seen in the interlayer magnetoresistance.
Magnanite multilayers have been fabricated using La0.67Ca0.33MnO3 as the ferromagnetic layer and Pr0.7Ca0.3MnO3 and Nd0.5Ca0.5MnO3 as the spacer layers. All the multilayers were grown on LaAlO3 (100) by pulse laser deposition. An enhanced magnetoresistnace (defined (RH- R0)/R0) of more than 98% is observed in these multilayers. Also a low field magnetoresistance of 41% at 5000 Oe is observed in these multilayer films. The enhanced MR is attributed to the induced double exchange in the spacer layer, which is giving rise to more number of conducting carriers. This is compared by replacing the sp…
Bulk samples of carbon multilayer nanotubes with the structure of nested cones (fishbone structure) suitable for transport measurements, were prepared by compressing under high pressure (~25 kbar) a nanotube precursor synthesized through thermal decomposition of polyethylene catalyzed by nickel. The structure of the initial nanotube material was studied using high-resolution transmission electron microscopy. In the low-temperature range (4.2 - 100 K) the electric resistance of the samples changes according to the law ln ρ~ (T_0/T)^{1/3}, where T_0 ~ 7 K. The measured magnetoresistance is quadr…
Magnetic tunnel junctions (MTJ) with AlOx barrier were fabricated by a deposition tool called Biased Target Ion Beam Deposition (BTIBD) using low energy ion source (0-50 eV) and voltage biased targets. The BTIBD system applies bias voltage directly and only on the desired targets, providing enough sputtering energy and avoiding "overspill" contamination during film deposition. The successful deposition of AlOx-MTJs demonstrated the capability of BTIBD to make multilayer structures with good film quality. MTJ thin film surface roughness and intermixing between layers are among the key problems …
Magnetic configurations in heterostructures are often difficult to probe when the magnetic entities are buried inside. In this study we have captured magnetic and magnetoresistance "fingerprints" of Co nanodiscs embedded in Co/Cu multilayered nanowires using a first-order reversal curve method. In 200nm diameter nanowires, the magnetic configurations can be tuned by adjusting the Co nanodisc aspect ratio. Nanowires with the thinnest Co nanodiscs exhibit single domain behavior, while those with thicker Co reverse via vortex states. A superposition of giant and anisotropic magnetoresistance is o…
We present a theoretical description of the interlayer magnetoresistance in the layered Dirac fermion system with the application to the organic conductor α-(BEDT-TTF)_2I_3 under pressure. Assuming a non-vertical interlayer tunneling and including higher Landau level effects we calculate the interlayer conductivity using the Kubo formula.We propose a physical picture of the experimentally observed crossover from the negative interlayer magnetoresistance, where the Dirac fermion zero-energy Landau level plays a central role, to the positive interlayer magnetoresistance that is the consequence o…
Ab initio calculations for the giant magnetoresistance (GMR) in Co/Cu, Fe/Cr, and Fe/Au multilayers are presented. The electronic structure of the multilayers and the scattering potentials of point defects therein are calculated self-consistently. Residual resistivities are obtained by solving the quasi-classical Boltzmann equation including the electronic structure of the layered system, the anisotropic scattering cross sections derived by a Green's function method and the vertex corrections. Furthermore, the influence of scattering centers at the interfaces and within the metallic layers is …
A nonlinear magnetoresistance - called unidirectional spin-Hall magnetoresistance - is recently experimentally discovered in metallic bilayers consisting of a heavy metal and a ferromagnetic metal. To study the fundamental mechanism of the USMR, both ferromagnetic and heavy metallic layer thickness dependence of the USMR are presented in a Pt/Co/AlOx trilayer at room temperature. To avoid ambiguities, second harmonic Hall measurements are used for separating spin-Hall and thermal contributions to the non-linear magnetoresistance. The experimental results are fitted by using a drift-diffusion t…
Multilayer edge molecular spintronics device (MEMSD) approach can produce novel logic and memory units for the computers. MEMSD are produced by bridging the molecular channels across the insulator, in the exposed edge region(s) of a magnetic tunnel junction (MTJ). The bridged molecular channels start serving as the dominant exchange coupling medium between the two ferromagnetic electrodes of a MTJ. Present study focus on the effect of molecule enhanced exchange coupling on the magnetic properties of the MTJ. This paper shows that organometallic molecular clusters (OMCs) strongly increased the …
Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single $25 nm$ thick ferromagnetic layer exhibit giant magnetoresistance (GMR) type behavior. The resistance decreases for parallel and transversal magnetic field alignements with a Langevin-type magnetic field dependence up to B=12 T. The phenomenon is explained by a granular interface structure. Results on Fe/Ag multilayers are also interpreted in terms of a granular interface magnetoresistance.
In order to better understand the role of possible couplings in determining the giant magnetoresistance (GMR) behavior of multilayers, a knowledge of the dependence of the $GMR$ on magnetic field $H$ appears to be useful. Since a few specific cases have only been treated theoretically in the literature, it was decided to carry out a modeling of the $GMR(H)$ curves of ferromagnetic/non-magnetic (FM/NM) multilayers with various interlayer couplings. For simplicity, we focused on a trilayer structure (FM1/NM/FM2) corresponding fairly well to the case of a large number of FM/NM bilayers. To carry …
We present a comprehensive review of data and analysis of Giant (G) Magnetoresistance (MR) with Current-flow Perpendicular-to-layer-Planes (CPP-MR) of magnetic multilayers [F/N]n (n = number of repeats) with alternating nanoscale layers of ferromagnetic (F) and non-magnetic (N) metals. GMR, a large change in resistance when an applied magnetic field changes the moment ordering of adjacent F-layers from anti-parallel (AP) to parallel (P), was discovered in 1988 in the Current-flow-in-layer-Planes (CIP) geometry. The CPP-MR has two advantages over the CIP-MR: (1) it allows more direct access to …
Recently we have demonstrated the presence of spin-orbit toque in FeMn/Pt multilayers which, in combination with the anisotropy field, is able to rotate its magnetization consecutively from 0o to 360o without any external field. Here, we report on an investigation of static and dynamic magnetic properties of FeMn/Pt multilayers using combined techniques of magnetometry, ferromagnetic resonance, inverse spin Hall effect and spin Hall magnetoresistance measurements. The FeMn/Pt multilayer was found to exhibit ferromagnetic properties, and its temperature dependence of saturation magnetization ca…
Using spin dependent specular and off-specular polarized neutron reflectivity (PNR), we report the observation of a twisted helical magnetic structure with planar 2π domain wall (DW) and highly correlated magnetic domains in a Gd/Co multilayer. Specular PNR with polarization analysis reveals the formation of planar 2πDWs below a compensation temperature (TComp), resulting to positive exchange bias in this system. Off-specular PNR with spin polarization showed development of magnetic inhomogenities (increase in magnetic roughness) for central part (thickness ~ 25-30 Å) of each Gd layer, where m…
Results of magnetization, magnetotransport and Mossbauer spectroscopy measurements of sequentially evaporated Fe-Ag granular composites are presented. The strong magnetic scattering of the conduction electrons is reflected in the sublinear temperature dependence of the resistance and in the large negative magnetoresistance. The simultaneous analysis of the magnetic properties and the transport behavior suggests a bimodal grain size distribution. A detailed quantitative description of the unusual features observed in the transport properties is given.
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.
The inter-layer magnetoresistance in a multilayered massless Dirac fermion system, $α$-(BEDT-TTF)$_2$I$_3$, under hydrostatic pressure was investigated. We succeeded in detecting the zero-mode (n=0) Landau level and its spin splitting in the magnetic field normal to the 2D plane. We demonstrated that the effective Coulomb interaction in the magnetic field intensifies the spin splitting of zero-mode Landau carriers. At temperatures below 2K, magnetic fields above several Tesla break the twofold valley degeneracy.
This paper has two parts. The first part uses a single point of view to discuss the reflection and averaging mechanisms of spin-transfer between current-carrying electrons and the ferromagnetic layers of magnetic/non-magnetic heterostructures. The second part incorporates both effects into a matrix Boltzmann equation and reports numerical results for current polarization, spin accumulation, magnetoresistance, and spin-transfer torques for Co/Cu/Co multilayers. When possible, the results are compared quantitatively with relevant experiments.
We theoretically studied spin dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of GMR. This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones despite lamination induce…
A novel, general Green's function technique for elastic spin-dependent transport calculations is presented, which (i) scales linearly with system size and (ii) allows straightforward application to general tight-binding Hamiltonians (spd in the present work). The method is applied to studies of conductance and giant magnetoresistance (GMR) of magnetic multilayers in CPP (current perpendicular to planes) geometry in the limit of large coherence length. The magnetic materials considered are Co and Ni, with various non-magnetic materials from the 3d, 4d, and 5d transition metal series. Realistic …
We report magnetoresistance data in magnetic semiconductor multilayers, which exhibit a clear step-wise behavior as a function of external field. We attribute this highly non-trivial step-wise behavior to next-nearest-neighbor interlayer exchange coupling. Our microscopic calculation suggests that this next-nearest-neighbor coupling can be as large as 24% of the nearest-neighbor coupling. It is argued that such unusually long-range interaction is made possible by the quasi-one-dimensional nature of the system and by the long Fermi wavelength characteristic of magnetic semiconductors.
We have studied the c-axis interlayer magnetoresistance (ILMR), R_c(B) in graphite. The measurements have been performed on strongly anisotropic highly oriented pyrolytic graphite (HOPG) samples in magnetic field up to B = 9 T applied both parallel and perpendicular to the sample c-axis in the temperature interval 2 K < T < 300 K. We have observed negative magnetoresistance, dR_c/dB < 0, for B || c-axis above a certain field B_m(T) that reaches its minimum value B_m = 5.4 T at T = 150 K. The results can be consistently understood assuming that ILMR is related to a tunneling between zero-energy…
The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed in manipulation of the magnetization direction by in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of the W/CoFeB/MgO structures and its correlation to the current-induced torque to the magnetization. We observe that the MR is independent of the angle between magnetization and curren…
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200 degree C and then decreased rapidly at Ta over 250 degree C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture result-ing from diffusion of B into Pd layers. MTJs which were in-situ annealed at 350oC just after depo-siting bottom CoFe…
The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the thermoelectric power factor. The Seebeck coefficient reaches values up to -18 microvolt/K at room temperature and shows a magnetic field dependence up to 28.6 % upon spin reversal. In combination with …
We measured the low temperature specific heat of a sputtered $(Fe_{23Å}/Cr_{12Å})_{33}$ magnetic multilayer, as well as separate $1000Å$ thick Fe and Cr films. Magnetoresistance and magnetization measurements on the multilayer demonstrated antiparallel coupling between the Fe layers. Using microcalorimeters made in our group, we measured the specific heat for $4<T<30 K$ and in magnetic fields up to $8 T$ for the multilayer. The low temperature electronic specific heat coefficient of the multilayer in the temperature range $4<T<14 K$ is $γ_{ML}=8.4 mJ/K^{2}g-at$. This is significantly larger th…
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 % has been observed, corresponding to spin polarization of 5 - 10 % in the measured temperature range of 300 - 75 K. First principles calculations for ideal junctions results in a tunnel magnetoresistan…
We report the current-perpendicular-to-plane giant magnetoresistance of a spin valve with Co2MnSi (CMS) Heusler alloy ferromagnetic electrodes. A multilayer stack of Cr/Ag/Cr/CMS/Cu/CMS/Fe25Co75/Ir28Mn72/Ru was deposited on a MgO (001) single crystal substrate. The bottom CMS layer was epitaxially grown on the Cr/Ag/Cr buffer layers and was ordered to the L21 structure after annealing at 673 K. The upper CMS layer was found to grow epitaxially on the Cu spacer layer despite the large lattice mismatch between Cu and CMS. The highest MR ratios of 8.6% and 30.7% for CPP-GMR were recorded at room …
Antiferromagnetic interlayer coupling in dilute magnetic semiconductor superlattices could result in the realisation of large magnetoresistance effects analogous to the giant magnetoresistance seen in metallic multilayer structures. In this paper we use a mean-field theory of carrier induced ferromagnetism to explore the multidimensional parameter space available in (Ga,Mn)As based superlattice systems. Based on these investigations we examine the feasibility of creating a superlattice that exhibits antiferromagnetic coupling and suggest potentially viable recipes.
Single-layer $\it{h}$-BN is known to have edges with unique magnetism, however, in the commonly fabricated multilayer $\text{AA}^{\prime}$-$\it{h}$-BN, edge relaxations occur that create interlayer bonds and eliminate the unpaired electrons at the edge. Recently, a robust method of growing the unconventional Bernal-stacked $\it{h}$-BN (AB-$\it{h}$-BN) has been reported. Here, we use theoretical approaches to investigate the nitrogen-terminated zigzag edges in AB-$\it{h}$-BN that can be formed in a controlled fashion using a high-energy electron beam. We find that these "open" edges remain inta…
Magnetization and magnetoresistance measurements are reported for antiferromagnetically coupled DyFe$_2$/YFe$_2$ multilayers in fields up to 23 T. We demonstrate that the formation of short exchange springs (~ 2 nm) in the magnetically soft YFe$_2$ layers results in a giant magneto-resistance as high as 32% in the spring region. It is shown that both the magnitude of the effect, and its dependence on magnetic field, are in good agreement with the theory of Levy and Zhang for giant magnetoresistance due to domain wall like structures.
Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer cou…
MacDonald and co-workers recently predicted that high current densities could affect the magnetic order of antiferromagnetic (AFM) multilayers, in ways similar to those that occur in ferromagnetic (F) multilayers, and that changes in AFM magnetic order can produce an antiferromagnetic Giant Magnetoresistance (AGMR). Four groups have now studied current-driven effects on exchange bias at F/AFM interfaces. In this paper, we first briefly review the main predictions by MacDonald and co-workers, and then the results of experiments on exchange bias that these predictions stimulated.
Within the framework of a two-band tight-binding model, we have performed calculations of giant magnetoresistance, exchange coupling and thermoelectric power (TEP) for a system consisting of three magnetic layers separated by two non-magnetic spacers with the first two magnetic layers strongly antiferromagnetically exchange-coupled. We have shown how does the GMR relate with the corresponding regions of magnetic structure phase diagrams and computed some relevant hysteresis loops, too. The GMR may take negative values for specific layers thicknesses, and the TEP reveals quite pronounced oscill…
All-Heusler multilayer structures have been investigated by means of high kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism, aiming to address the amount of disorder and interface diffusion induced by annealing of the multilayer structure. The studied multilayers consist of ferromagnetic Co$_2$MnGe and non-magnetic Rh$_2$CuSn layers with varying thicknesses. We find that diffusion begins already at comparably low temperatures between 200 $^{\circ}$C and 250 $^{\circ}$C, where Mn appears to be most prone to diffusion. We also find evidence for a 4 Å thick magnetical…
ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developed multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by x-ray photoelectron spectroscopy, corresponding to the electronic configuration of [Xe]4f1. Electrical resistivity showed the nonmonotonic temperature dependence with a sharp resistivity maximum, concomitant with a magnetization kink at 10 K, suggesting antiferromagnetic transition. In addition, magnetoresistance showed a large angular-dependent magnetoresistance. These results imply that carrier transport in the Bi2- square net could be in…
