A detailed study of the evolution of the magnetoresistance was performed on electrodeposited Co/Cu multilayers with Cu layer thicknesses ranging from 0.5 nm to 4.5 nm. For thin Cu layers (up to 1.5 nm), anisotropic magnetoresistance (AMR) was observed whereas multilayers with thicker Cu layers exhibited clear giant magnetoresistance (GMR) behaviour. The GMR magnitude increased up to about 3.5 to 4 nm Cu layer thickness and slightly decreased afterwards. According to magnetic measurements, all samples exhibited ferromagnetic (FM) behaviour. The relative remanence turned out to be about 0.75 for both AMR and GMR type multilayers. This clearly indicates the absence of an antiferromagnetic (AF) coupling between adjacent magnetic layers for Cu layers even above 1.5 nm where the GMR effect occurs. The AMR behaviour at low spacer thicknesses indicates the presence of strong FM coupling (due to, e.g., pin-holes in the spacer and/or areas of the Cu layer where the layer thickness is very small). With increasing spacer thickness, the pin-hole density reduces and/or the layer thickness uniformity improves which both lead to a weakening of the FM coupling. This improvement in multilayer structure quality results in a better separation of magnetic layers and the weaker coupling (or complete absence of interlayer coupling) enables a more random magnetization orientation of adjacent layers, all this leading to an increase of the GMR. Coercive field and zero-field resistivity measurements as well as the results of a structural study reported earlier on the same multilayers provide independent evidence for the microstructural features established here. The large GMR reported previously on such Co/Cu multilayers at Cu layer thicknesses around 1 nm can be attributed to the presence of a fairly large superparamagnetic (SPM) fraction rather than being due to a strong AF coupling.
The overall quality of multilayer thin films prepared by electrodeposition is strongly influenced by the surface and interface roughness which increases with the layer number. For that very reason the reliable analysis of the first few layers can be necessary. However, in depth profiling methods based on sputtering techniques the first layer is always found at the bottom of the sputtered crater. Since the depth resolution decreases during sputtering, the analysis of the first few layers are difficult. In order to circumvent this problem, we used reverse Secondary Neutral Mass Spectrometry (SNM…
Amorphous/crystalline multilayer structures of Fe-P alloys were deposited electrochemically using the single bath technique. Hall-Petch behavior of microhardness with respect to sublayer thickness was observed down to a sublayer thickness of 15 nm. For thinner sublayers, a hardness plateau was obtained. The transition at a sublayer thickness of 15 nm coincides with the loss of the multilayer structure as observed in transmission electron microscopy. The transition is a possible result of a change in the amorphous to crystalline sublayer thickness ratio and the interface roughness development d…
The giant magnetoresistance (GMR) effect has been widely investigated on electrodeposited ferromagnetic/non-magnetic (FM/NM) multilayers generally containing a large number of bilayers. In most applications of the GMR effect, layered structures consisting of a relatively small number of consecutive FM and NM layers are used. It is of great interest, therefore, to investigate the initial stages of GMR multilayer film growth by electrodeposition. In the present work we have extended our previous studies on ED GMR multilayers to layered structures with a total thickness ranging from a few nanomet…
No systematic studies have been carried out on the giant magnetoresistance (GMR) of electrodeposited (ED) Fe-Co/Cu multilayers since the elaboration of a method for the optimization of the Cu layer deposition potential. In this paper, we present results on the electrochemical optimization of the Cu layer deposition potential which was found to depend on the relative iron concentration in the bath. An X-ray diffraction study of ED Fe5Co95(1.5 nm)/Cu(dCu) multilayers with dCu ranging from 0.8 nm to 10 nm revealed an fcc structure. For most of the multilayers, a weak superlattice satellite reflec…
Room-temperature transport properties (the zero-field resistivity, ρ0, and the GMR) were studied for ED Ni50Co50/Cu multilayers as a function of the individual layer thicknesses and total multilayer thickness. The Cu deposition potential was optimized in order to obtain the preset layer thicknesses. The surface roughness development was studied by AFM, which revealed an exponential roughening with total thickness. The Cu layer thickness strongly influenced the roughness evolution. As expected, ρ0 decreased with increasing Cu layer thickness whereas it increased strongly for large total multila…
It has been shown previously for electrodeposited Co/Cu multilayers that the single-bath electrodeposition process can be optimized from an electrochemical point of view in order to avoid unwanted Co dissolution and incorporation of Co in the non-magnetic layer during the Cu deposition pulse. In the present work, electrodeposition of Ni-Co/Cu multilayers has been studied to clarify if the same optimization method is appropriate when two magnetic elements are present and if this potential results in the largest giant magnetoresistance (GMR) for the particular alloy system studied. For this purp…
The giant magnetoresistance (GMR) and structure was investigated for electrodeposited Co/Cu multilayers prepared by a conventional galvanostatic/potentiostatic pulse combination from a pure sulfate electrolyte with various layer thicknesses, total multilayer thickness and Cu deposition potential. X-ray diffraction (XRD) measurements revealed superlattice satellite reflections for many of the multilayers having sufficiently large thickness (at least 2 nm) of both constituent layers. The bilayer repeats derived from the positions of the visible superlattice reflections were typically 10-20% high…
The giant magnetoresistance (GMR) was investigated for electrodeposited Co/Cu multilayers. In order to better understand the formation of individual layers and their influence on GMR, multilayers produced by two different deposition strategies were compared. One series of Co(2 nm)/Cu(tCu) multilayers with tCu ranging from 0.5 nm to 6 nm was produced with the conventional two-pulse plating by using a galvanostatic/potentiostatic (G/P) pulse combination for the magnetic/non-magnetic layer deposition, respectively, whereby the Cu layer deposition was carried out at the electrochemically optimized…
The electrical resistivity and the anisotropic magnetoresistance (AMR) was investigated for Ni Co alloys at and below room temperature. The Ni Co alloy layers having a thickness of about 2 um were prepared by electrodeposition on Si wafers with evaporated Cr and Cu underlayers. The alloy composition was varied in the whole concentration range by varying the ratio of Ni sulfate and Co sulfate in the electrolyte. The Ni Co alloy deposits were investigated first in the as deposited state on the substrates and then, by mechanically stripping them from the substrates, as self supporting layers both…
We study the dependence of perpendicular-current magnetoresistance in magnetic multilayers on the angle between the magnetizations of the layers. This dependence varies with the thickness of one of the layers, and is different for multilayers with two and three magnetic layers. We derive a system of equations representing an extension of the two-current series resistor model, and show that the angular dependence of magnetoresistance gives information about the noncollinear spin-transport in ferromagnets.
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving increased magnetoresistance. Second, we insert a spacer with a short spin-diffusion length between the magnetic layers, decreasing the magnetoresistance. Third, we vary the angle between layer magnetizations. In all cases, we find an approximately linear dependence between magnetoresistance and inverse switching current. We give a qualitative …
Using temperature-dependent magnetoresistance and magnetization measurements on Fe/Cr multilayers that exhibit pronounced giant magnetoresistance (GMR), we have found evidence for the presence of a glassy antiferromagnetic (GAF) phase. This phase reflects the influence of interlayer exchange coupling (IEC) at low temperature (T < 140K) and is characterized by a field-independent glassy transition temperature, Tg, together with irreversible behavior having logarithmic time dependence below a "de Almeida and Thouless" (AT) critical field line. At room temperature, where the GMR effect is still r…
We study the role of diamagnetic effects on the transport properties of metallic magnetic multilayers to elucidate whether they can explain the Giant Magnetoresistance (GMR) effect observed in those systems. Realistic Fermi surface topologies in layered ferromagnets are taken into account, with the possibilities of different types of orbits depending on the electron spin. Both configurations, with ferromagnetic and anti-ferromagnetic couplings between magnetic layers, are considered and the transmission coefficient for scattering at the interface boundary is modelled to include magnetic and ro…
Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.
We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and…
We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered [(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates. In the multilayers where n=5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN, t(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, with increasing t(TaN), the values of coercivity, grain size, and amplitude of maximum magnetoresistance (MR) of the samples all decrease first and then increase after reaching a minimum when t(TaN) is around 2.0-4.0 nm. This trend is also associated with an evolution of in-plane magnetic anisotrop…
Colossal enhancement of magnetoresistance has been achieved over a broad temperature range which extends upto the room temperature, in ferromagnetic metal-charge ordered insulator manganite multi-layers. The artificially created phase coexistence in the multilayers reproduce the characteristic signatures of metastability in the magnetotransport properties commonly observed in electronically phase-separated manganites.
The metal-insulator transition temperature in CMR manganites has been altered and brought close to the room temperature by preparing La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO)/ Nd$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (NSMO) multilayers with ultra thin individual layers of LSMO and NSMO. The LSMO/NSMO multilayers with ultra thin individual layers of thickness of about $10Å$ exhibits 150% magnetoresistance at 270 K whereas LSMO/NSMO multilayers with moderate individual layer thickness of about $40Å$ each exhibits a mere 15% magnetoresistance at the same temperature. We have shown that the reduction in thick…
Bulk samples of carbon multilayer nanotubes with the structure of nested cones (fishbone structure) suitable for transport measurements, were prepared by compressing under high pressure (~25 kbar) a nanotube precursor synthesized through thermal decomposition of polyethylene catalyzed by nickel. The structure of the initial nanotube material was studied using high-resolution transmission electron microscopy. In the low-temperature range (4.2 - 100 K) the electric resistance of the samples changes according to the law ln ρ~ (T_0/T)^{1/3}, where T_0 ~ 7 K. The measured magnetoresistance is quadr…
The effect of disorder on the perpendicular magnetoresistance of magnetic multilayers is investigated theoretically. Various kinds of disorder are considered: (i) interface substitutional disorder and (ii) bulk disorder in the various layers and in the leads. The calculations are based upon the non-equilibrium Green's function formalism, together with the recursion method for calculating the real-space Green's function.
We report on the experimental results of interlayer magnetoresistance in multilayer massless Dirac fermion system $α$-(BEDT-TTF)$_2$I$_3$ under hydrostatic pressure and its interpretation. We succeeded in detecting the zero-mode Landau level (n=0 Landau level) that is epected to appear at the contact points of Dirac cones in the magnetic field normal to the two-dimensional plane. The characteristic feature of zero-mode Landau carriers including the Zeeman effect is clearly seen in the interlayer magnetoresistance.
Magnanite multilayers have been fabricated using La0.67Ca0.33MnO3 as the ferromagnetic layer and Pr0.7Ca0.3MnO3 and Nd0.5Ca0.5MnO3 as the spacer layers. All the multilayers were grown on LaAlO3 (100) by pulse laser deposition. An enhanced magnetoresistnace (defined (RH- R0)/R0) of more than 98% is observed in these multilayers. Also a low field magnetoresistance of 41% at 5000 Oe is observed in these multilayer films. The enhanced MR is attributed to the induced double exchange in the spacer layer, which is giving rise to more number of conducting carriers. This is compared by replacing the sp…
Ab initio calculations for the giant magnetoresistance (GMR) in Co/Cu, Fe/Cr, and Fe/Au multilayers are presented. The electronic structure of the multilayers and the scattering potentials of point defects therein are calculated self-consistently. Residual resistivities are obtained by solving the quasi-classical Boltzmann equation including the electronic structure of the layered system, the anisotropic scattering cross sections derived by a Green's function method and the vertex corrections. Furthermore, the influence of scattering centers at the interfaces and within the metallic layers is …
We present a theoretical description of the interlayer magnetoresistance in the layered Dirac fermion system with the application to the organic conductor α-(BEDT-TTF)_2I_3 under pressure. Assuming a non-vertical interlayer tunneling and including higher Landau level effects we calculate the interlayer conductivity using the Kubo formula.We propose a physical picture of the experimentally observed crossover from the negative interlayer magnetoresistance, where the Dirac fermion zero-energy Landau level plays a central role, to the positive interlayer magnetoresistance that is the consequence o…
Magnetoresistance measurements in the CPP geometry have been performed on single electrodeposited Co nanowires exchange biased on one side by a sputtered amorphous GdCo layer. This geometry allows the stabilization of a single domain wall in the Co wire, the thickness of which can be controlled by an external magnetic field. Comparing magnetization, resistivity, and magnetoresistance studies of single Co nanowires, of GdCo layers, and of the coupled system, gives evidence for an additional contribution to the magnetoresistance when the domain wall is compressed by a magnetic field. This contri…
Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance (AMR) occurring in the ferromagnetic layer. It is shown, on the basis of a generalized two channel model, that there is an interface resistance contribution due to anisotropic scattering, beyond spin accumulation and giant magnetoresistance (GMR). The corresponding expression of the thermopower is derived and compared with the expression for the thermopower produced by the GMR. First measurements of anisotropic magnetothermopower are presented in electrodeposited Ni n…
Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single $25 nm$ thick ferromagnetic layer exhibit giant magnetoresistance (GMR) type behavior. The resistance decreases for parallel and transversal magnetic field alignements with a Langevin-type magnetic field dependence up to B=12 T. The phenomenon is explained by a granular interface structure. Results on Fe/Ag multilayers are also interpreted in terms of a granular interface magnetoresistance.
In order to better understand the role of possible couplings in determining the giant magnetoresistance (GMR) behavior of multilayers, a knowledge of the dependence of the $GMR$ on magnetic field $H$ appears to be useful. Since a few specific cases have only been treated theoretically in the literature, it was decided to carry out a modeling of the $GMR(H)$ curves of ferromagnetic/non-magnetic (FM/NM) multilayers with various interlayer couplings. For simplicity, we focused on a trilayer structure (FM1/NM/FM2) corresponding fairly well to the case of a large number of FM/NM bilayers. To carry …
We present a comprehensive review of data and analysis of Giant (G) Magnetoresistance (MR) with Current-flow Perpendicular-to-layer-Planes (CPP-MR) of magnetic multilayers [F/N]n (n = number of repeats) with alternating nanoscale layers of ferromagnetic (F) and non-magnetic (N) metals. GMR, a large change in resistance when an applied magnetic field changes the moment ordering of adjacent F-layers from anti-parallel (AP) to parallel (P), was discovered in 1988 in the Current-flow-in-layer-Planes (CIP) geometry. The CPP-MR has two advantages over the CIP-MR: (1) it allows more direct access to …
Using spin dependent specular and off-specular polarized neutron reflectivity (PNR), we report the observation of a twisted helical magnetic structure with planar 2π domain wall (DW) and highly correlated magnetic domains in a Gd/Co multilayer. Specular PNR with polarization analysis reveals the formation of planar 2πDWs below a compensation temperature (TComp), resulting to positive exchange bias in this system. Off-specular PNR with spin polarization showed development of magnetic inhomogenities (increase in magnetic roughness) for central part (thickness ~ 25-30 Å) of each Gd layer, where m…
The maximum current-perpendicular-to-plane giant magnetoresistance is searched for in magnetic multilayers made of Co, Ni, and Cu with disorder levels similar to those found in room temperature experiments. The calculation is made possible by a highly optimized linear response code, which uses the impurity averaged Green's function technique and a 9-band per spin tight binding model. Using simulated annealing, hundreds of different configurations of the atomic layers are examined to find a maximum GMR of 450% in ultrathin Ni/Cu superlattices.
We report the first measurements of effects of large current densities on current-perpendicular-to-plane magnetoresistance (MR) of magnetic multilayers containing two antiferromagnetic layers separated by a non-magnetic layer. These measurements were intended to search for a recently predicted antiferromagnetic giant magnetoresistance (AGMR) similar to GMR seen in multilayers containing two ferromagnetic layers separated by a non-magnetic layer. We report on MR measurements for current injected from point contacts into sandwiches containing different combinations of layers of F = CoFe and AFM …
We theoretically studied spin dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of GMR. This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones despite lamination induce…
The influence of a c(2x2) ordered interface alloy of 3d transition metals at the ferromagnet/nonmagnet interface on interlayer exchange coupling (IXC), the formation of quantum well states (QWS) and the phenomenon of Giant MagnetoResistance is investigated. We obtained a strong dependence of IXC on interface alloy formation. The GMR ratio is also strongly influenced. We found that Fe, Ni and Cu alloys at the interface enhance the GMR ratio for in-plane geometry by nearly a factor of 2.
We report magnetoresistance data in magnetic semiconductor multilayers, which exhibit a clear step-wise behavior as a function of external field. We attribute this highly non-trivial step-wise behavior to next-nearest-neighbor interlayer exchange coupling. Our microscopic calculation suggests that this next-nearest-neighbor coupling can be as large as 24% of the nearest-neighbor coupling. It is argued that such unusually long-range interaction is made possible by the quasi-one-dimensional nature of the system and by the long Fermi wavelength characteristic of magnetic semiconductors.
A novel, general Green's function technique for elastic spin-dependent transport calculations is presented, which (i) scales linearly with system size and (ii) allows straightforward application to general tight-binding Hamiltonians (spd in the present work). The method is applied to studies of conductance and giant magnetoresistance (GMR) of magnetic multilayers in CPP (current perpendicular to planes) geometry in the limit of large coherence length. The magnetic materials considered are Co and Ni, with various non-magnetic materials from the 3d, 4d, and 5d transition metal series. Realistic …
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200 degree C and then decreased rapidly at Ta over 250 degree C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture result-ing from diffusion of B into Pd layers. MTJs which were in-situ annealed at 350oC just after depo-siting bottom CoFe…
We report the current-perpendicular-to-plane giant magnetoresistance of a spin valve with Co2MnSi (CMS) Heusler alloy ferromagnetic electrodes. A multilayer stack of Cr/Ag/Cr/CMS/Cu/CMS/Fe25Co75/Ir28Mn72/Ru was deposited on a MgO (001) single crystal substrate. The bottom CMS layer was epitaxially grown on the Cr/Ag/Cr buffer layers and was ordered to the L21 structure after annealing at 673 K. The upper CMS layer was found to grow epitaxially on the Cu spacer layer despite the large lattice mismatch between Cu and CMS. The highest MR ratios of 8.6% and 30.7% for CPP-GMR were recorded at room …
Antiferromagnetic interlayer coupling in dilute magnetic semiconductor superlattices could result in the realisation of large magnetoresistance effects analogous to the giant magnetoresistance seen in metallic multilayer structures. In this paper we use a mean-field theory of carrier induced ferromagnetism to explore the multidimensional parameter space available in (Ga,Mn)As based superlattice systems. Based on these investigations we examine the feasibility of creating a superlattice that exhibits antiferromagnetic coupling and suggest potentially viable recipes.
Single-layer $\it{h}$-BN is known to have edges with unique magnetism, however, in the commonly fabricated multilayer $\text{AA}^{\prime}$-$\it{h}$-BN, edge relaxations occur that create interlayer bonds and eliminate the unpaired electrons at the edge. Recently, a robust method of growing the unconventional Bernal-stacked $\it{h}$-BN (AB-$\it{h}$-BN) has been reported. Here, we use theoretical approaches to investigate the nitrogen-terminated zigzag edges in AB-$\it{h}$-BN that can be formed in a controlled fashion using a high-energy electron beam. We find that these "open" edges remain inta…
We have studied the dependence of impurity vs. band effects in the appearance of inverse giant magnetoresistance (IGMR) in Cu/Fe superlattices whit Cr. Current in plane (CIP) and current perpendicular to the plane (CPP) geometries are considered. For the calculation of the conductivities we have used the linearized Boltzmann equation in the relaxation time approximation. Cr impurity effects are taken into account through the spin dependent relaxation times and the band effects through the semiclassical velocities obtained from the LDA calculated electronic structure. The larger the Cr/Fe hybri…
Recent fabrication of atomic precision nanodevices for spintronics greatly boosted their performance and also revealed new interesting features, as oscillating magnetoresistance with number of atomic layers in a multilayered structure. This motivates the need to go beyond the usual theoretical approach of semi-classical continuous layers. Here the simple tight-binding dynamics is used to describe quantum conduction in a multicomponent system with spin-polarized electrodes separated by an ultrathin and atomically coherent non-magnetic spacer (either metallic or insulating). A possibility is ind…
Magnetization and magnetoresistance measurements are reported for antiferromagnetically coupled DyFe$_2$/YFe$_2$ multilayers in fields up to 23 T. We demonstrate that the formation of short exchange springs (~ 2 nm) in the magnetically soft YFe$_2$ layers results in a giant magneto-resistance as high as 32% in the spring region. It is shown that both the magnitude of the effect, and its dependence on magnetic field, are in good agreement with the theory of Levy and Zhang for giant magnetoresistance due to domain wall like structures.
ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developed multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by x-ray photoelectron spectroscopy, corresponding to the electronic configuration of [Xe]4f1. Electrical resistivity showed the nonmonotonic temperature dependence with a sharp resistivity maximum, concomitant with a magnetization kink at 10 K, suggesting antiferromagnetic transition. In addition, magnetoresistance showed a large angular-dependent magnetoresistance. These results imply that carrier transport in the Bi2- square net could be in…
Within the framework of a two-band tight-binding model, we have performed calculations of giant magnetoresistance, exchange coupling and thermoelectric power (TEP) for a system consisting of three magnetic layers separated by two non-magnetic spacers with the first two magnetic layers strongly antiferromagnetically exchange-coupled. We have shown how does the GMR relate with the corresponding regions of magnetic structure phase diagrams and computed some relevant hysteresis loops, too. The GMR may take negative values for specific layers thicknesses, and the TEP reveals quite pronounced oscill…
All-Heusler multilayer structures have been investigated by means of high kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism, aiming to address the amount of disorder and interface diffusion induced by annealing of the multilayer structure. The studied multilayers consist of ferromagnetic Co$_2$MnGe and non-magnetic Rh$_2$CuSn layers with varying thicknesses. We find that diffusion begins already at comparably low temperatures between 200 $^{\circ}$C and 250 $^{\circ}$C, where Mn appears to be most prone to diffusion. We also find evidence for a 4 Å thick magnetical…
When single-layer h-BN is subjected to a high-energy electron beam, triangular pores with nitrogen edges are formed. Because of the broken sp2 bonds, these pores are known to possess magnetic states. We report on the magnetism and electronic structure of triangular pores as a function of their size. Moreover, in the Bernal-stacked h-BN (AB-h-BN), multilayer pores with parallel edges can be created, which is not possible in the commonly fabricated multilayer AA'-h-BN. Given that these pores can be manufactured in a well-controlled fashion using an electron beam, it is important to understand th…
Measurements of Giant Magnetoresistance (GMR) in ferromagnetic/non-magnetic (F/N) multilayers with Current flow Perpendicular to the layer Planes (CPP-geometry) can give better access to the fundamental physics underlying GMR than measurements with the more usual Current flow In the layer Planes (CIP geometry). Because the same measuring current passes through all of the layers, the CPP-MR can often be described by simpler equations that allow separation of effects of scattering within the bulk of the F- and N-metals and at F/N, N1/N2, and F/S (S = superconductor) interfaces. We first describe…
We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a non-compensated Oersted field acting on the magnetic free layer appears. This field, in turn, is a driving force of magnetization precessions. Due to the GMR effect, resistance of the strip oscillates following the magnetization dynamics. This leads to rectification of the applied radio frequency current and induces a direct current voltage $V_{DC}$.…
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresista…
The intrinsic resistance peak (ridge) structures were recently found to appear in the carrier density dependence plot of the resistance of the AB-stacked multilayer graphene with even numbers of layers.The ridges are due to topological changes in the Fermi surface. Here, these structures were studied in AB-stacked multilayer graphene with odd numbers of layers (5 and 7 layers) by performing experiments using encapsulated high-quality graphene samples equipped with top and bottom gate electrodes.The intrinsic resistance peaks that appeared on maps plotted with respect to the carrier density and…
We report on a comprehensive study of the magnetic coupling between soft magnetic Fe layers and hard magnetic Dysprosium (Dy) layers at low temperatures (4.2 - 120K). For our experiments we prepared thin films of Fe and Dy and multilayers of Fe/Dy by ultra-high vacuum sputtering. The magnetic properties of each material were determined with a superconducting quantum interference device. Furthermore, we performed magnetoresistance measurements with similarly grown, microstructured devices, where the anisotropic magnetoresistance (AMR) effect was used to identify the magnetization state of the s…
Thermoelectric (TE) measurements have been performed on the workhorses of today's data storage devices, exhibiting either the giant or the anisotropic magnetoresistance effect (GMR and AMR). The temperature-dependent (50-300 K) and magnetic field-dependent (up to 1 T) TE power factor (PF) has been determined for several Co-Ni alloy nanowires with varying Co:Ni ratios as well as for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, which were all synthesized via a template-assisted electrodeposition process. A systematic investigation of the resistivity, as well as the Seebeck …
Magnetoresistive (xMR) sensors find extensive application in science and industry, replacing Hall sensors in various low field environments. While there have been some efforts in increasing the dynamic field range of xMR sensors, Hall sensors remain to dominate high field applications due to their wide linear range. Using a perpendicular magnetized reference system and an in-plane free layer allows us to overcome this disadvantage of xMR sensors, and, furthermore, investigate spin-canting effects in interlayer exchange coupled perpendicular synthetic antiferromagnets (p-SAF). We created p-SAFs…
