电沉积Ni50Co50/Cu多层膜的磁电阻和表面粗糙度研究
Magnetoresistance and surface roughness study of electrodeposited Ni50Co50/Cu multilayers
摘要：
研究了电沉积Ni 50 Co 50/Cu多层膜的室温输运特性（零场电阻率、ρ0和巨磁电阻率）随单层厚度和多层膜总厚度的变化。优化Cu沉积电势以获得预设的层厚度。用原子力显微镜研究了表面粗糙度的发展，发现随着总厚度的增加，表面粗糙度呈指数变化。铜层厚度强烈影响的粗糙度演变。正如预期的那样，ρ0随着Cu层厚度的增加而降低，而对于可以归因于所观察到的沉积物粗糙化的大的总多层厚度，ρ 0强烈地增加。所有Cu层厚度大于约1.5nm的多层膜都表现出GMR行为，最大GMR约为5%。由于ρ0的强烈增加，总多层膜厚度超过约300 nm时，GMR降低，ρ0的增加是由粗糙度增加引起的。GMR数据表明，由于层起伏，出现了与平面型散射成角度的电流。在分离了铁磁和超顺磁巨磁电阻的贡献后，详细分析了磁电阻数据的厚度演化。可以确定的是，ED Ni-Co/Cu多层膜不表现出振荡的GMR行为与间隔物的厚度。
英文摘要：
Room-temperature transport properties (the zero-field resistivity, ρ0, and the GMR) were studied for ED Ni50Co50/Cu multilayers as a function of the individual layer thicknesses and total multilayer thickness. The Cu deposition potential was optimized in order to obtain the preset layer thicknesses. The surface roughness development was studied by AFM, which revealed an exponential roughening with total thickness. The Cu layer thickness strongly influenced the roughness evolution. As expected, ρ0 decreased with increasing Cu layer thickness whereas it increased strongly for large total multilayer thicknesses that could be ascribed to the observed deposit roughening. All multilayers with Cu layer thicknesses above about 1.5 nm exhibited a GMR behavior with a maximum GMR of about 5 %. The GMR decreased for total multilayer thicknesses above about 300 nm due to the strong increase of ρ0, the latter caused by the enhanced roughness. The GMR data indicated the appearance of a current at angle to plane type scattering due to the layer undulations. The thickness evolution of the MR data was analyzed in detail after separating the ferromagnetic and superparamagnetic GMR contributions. It could be established that ED Ni-Co/Cu multilayers do not exhibit an oscillatory GMR behavior with spacer thickness.
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