The orbital Hall effect (OHE), resulting from non-trivial quantum geometry of 2D materials, has several potential advantages over the spin Hall effect (SHE), the latter being well known for its many applications in spintronics. Like the spin Hall effect, the OHE occurs in nonmagnetic materials without stringent symmetry requirements, but unlike the SHE it does no rely on relatively weak spin-orbit interaction. In 2D materials, these advantages risk to be nullified by the difficulty of turning the orbital moment away from the out-of-plane direction. Multilayered 2D materials offer a way out of this difficulty because the fluctuating in-plane component of the orbital moment, due to motion of electrons between the layers, can latch to a magnetic field. To describe this effect we have derived a semi-phenomenological equation of motion for the density of orbital magnetic moment in stacked 2D materials subjected to a magnetic field. Unlike the equations of motion for the spin, these equations produce a strongly anisotropic dynamics, which is governed by an inverse effective mass tensor for which we provide a fully microscopic expression. As a first application, we combine our equation of motion with phenomenological drift-diffusion equations to obtain a theory of orbital Hanle magnetoresistance in multilayered 2D materials.
Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling
我们报道了一种新型的铂和钽薄膜的磁电阻测量。由于Hanle效应，在磁场中，通过自旋霍尔效应在膜表面产生的自旋累积减少，导致如Dyakonov [PRL 99，126601（2007）]所预测的电阻增加。这种磁阻的角度依赖性类似于最近发现的自旋霍尔磁阻在Pt/Y3 Fe 5 O 12双层，虽然铁磁绝缘体的存在下是不需要的。我们表明，这种汉勒磁电阻是一种替代的，简单的方法来定量研究强自旋轨道耦合的金属中的电荷和自旋电流之间的耦合。
Orbital Hall conductivity and orbital diffusion length of Vanadium thin films by Hanle magnetoresistance
CIC NanoGUNE（纳米技术联合研究中心）；UPV-EHU（巴斯克地区国立大学）；Centro de Física de Materiales CSIC-UPV/EHU（材料物理中心）；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯科奎，巴斯克科学基金会）
Orbital angular momentum accumulation in SrVO3 thin films
CIC nanoGUNE BRTA（巴斯克纳米材料中心）；Department of Physics, Korea University（韩国大学物理系）；Center for Quantum Dynamics of Angular Momentum（角动量量子动力学中心）；Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC)（巴塞罗那材料科学研究所）
A strain-controlled magnetostrictive pseudo spin valve
通过逆磁致伸缩效应实现磁场控制是提高基于巨磁电阻效应的高能效存储和传感器件性能的有效途径。本文报道了在铁电PMN-PT衬底上生长的Co $/$ Cu $/$ Py赝自旋阀的横向电场驱动的应变介导磁性能调制。结果表明，随着电场的增加，赝自旋阀的巨磁电阻率逐渐减小，这是由于应变诱导磁弹性各向异性的贡献导致Co层的磁化强度偏离了初始方向.此外，我们表明，应变诱导的磁各向异性有效地转移磁致伸缩Co层的开关场，同时保持开关场的近零磁致伸缩Py层不受影响，由于其可忽略的磁致伸缩常数。我们认为，磁致伸缩优化的磁性薄膜在适当的工程多层结构可以提供一条路径，以提高自旋电子器件中的选择性磁开关。
Spin-transport characteristics in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET): Bias dependence of the spin polarization in Si and magnetoresistance in spin-valve signals
