We have studied the current through a carbon nanotube quantum dot with one ferromagnetic and one normal-metal lead. For the values of gate voltage at which the normal lead is resonant with the single available non-degenerate energy level on the dot, we observe a pronounced decrease in the current for one bias direction. We show that this rectification is spin-dependent, and that it stems from the interplay between the spin accumulation and the Coulomb blockade on the quantum dot. Our results imply that the current is spin-polarized for one direction of the bias, and that the degree of spin polarization is fully and precisely tunable using the gate and bias voltages. As the operation of this spin diode does not require high magnetic fields or optics, it could be used as a building block for electrically controlled spintronic devices.
Resonant manipulation of carbon nanotube valley-spin qubits by an electric field is investigated theoretically. We develop a new analysis of electrically driven spin resonance exploiting fixed physical characteristics of the nanotube: a bend and inhomogeneous disorder. The spectrum is simulated for an electron valley-spin qubit coupled to a hole valley-spin qubit and an impurity electron spin, and features that coincide with a recent measurement are identified. We show that the same mechanism allows resonant control of the full four-dimensional spin-valley space.
The measurement of the bandgap in quasi-one dimensional materials such as carbon nanotubes is challenging due to its dimensionality. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. Using these diodes, we measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55nm), (7,5) (0.83nm), and (6,5) (0.76nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties…
We describe dynamics of spin and valley transitions driven by alternating electric fields in quantum dots defined electrostatically within semiconducting carbon nanotubes (CNT). We use the tight-binding approach to describe the states localized within a quantum dot taking into account the circumferential spin-orbit interaction due to the s-p hybridization and external fields. The basis of eigenstates localized in the quantum dot is used in the solution of the time-dependent Schroedinger equation for description of spin flips and inter-valley transitions that are driven by periodic perturbation…
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to excitons with selective valley and spin$^{1-4}$. In atomically thin MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructures, the unique atomic registry of vdW layers provides a quasi-angular momentu…
An ambipolar $n$-$p$ double quantum dot defined by potential variation along a semiconducting carbon-nanotube is considered. We focus on the (1e,1h) charge configuration with a single excess electron in the conduction band state confined in the $n$-type dot and a single missing electron in the valence band state of the $p$-dot for which lifting of the Pauli blockade of the current was observed in the electric-dipole spin resonance [E. A. Laird et al. Nat. Nanotech. 8 , 565 (2013)]. The dynamics of the system driven by periodic electric field is studied with the Floquet theory and the time-depe…
We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.
We show how to increase the capacitance of super-capacitors by modifying the otherwise passive separator layer and turn it into an active diode-like structure. We demonstrate 15% capacitance increase for a diode-like separators without a bias. Additional 15% capacitance increase has been observed for biased separators.
Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots the neighbouring diode. The wavelength of the quantum dot emission from the neighbouring driven diode is tuned via the quantum confined Stark effect. We also show that we can electrically tune the fin…
Photovoltaics has two main processes: Optical absorption and power conversion. In photosynthesis, the two equivalent processes are optical absorption and chemical conversion. Whereas in the latter, the two processes are carried out by distinct proteins, in conventional photovoltaic diodes, the two processes are convoluted because the optical and transport paths are the same, leading to inefficiencies. Here, we separate the site and direction of light absorption from those of power generation to show that semiconducting single-walled carbon nanotubes (s-SWCNTs) provide an artificial system that…
Nanoscale electrothermal-switch superconducting diode for electrically programmable superconducting circuits
Nanjing University（南京大学）；Purple Mountain Laboratories（紫金山实验室）；Zhejiang University（浙江大学）；Nanjing University of Science and Technology（南京理工大学）；State Key Laboratory of Spintronics Devices and Technologies, Nanjing University（南京大学自旋电子学器件与技术国家重点实验室）
We describe an approach to electrically control the strong interaction between a single electron spin and the vibrational motion of a suspended carbon nanotube resonator. The strength of the deflection-induced spin-phonon coupling is dependent on the wavefunction of the electron confined in a lateral carbon nanotube quantum dot. An electrical field along the nanotube shifts the effective center of the quantum dot, leading to the corresponding modification of the spin-phonon strength. Numerical simulations with experimentally reachable parameters show that high fidelity quantum state transfer b…
Operation of semiconductor lasers in the 20--50 $μ$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at $λ= 26...30$ $μ$m at temp…
We demonstrate the first wavelength-tunable electrically-pumped source of non-classical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting-diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75-mm-long cell containing warm 87Rb atom vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step towards the realization of h…
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and have long been of interest for incorporation into quantum optoelectronic devices ranging from single photon sources to multi-bit quantum computers. The properties of single QDs, or carriers confined within those QDs, can be tuned by external electric fields, which provides an important tool for the development of scalable and tunable devices. Deterministic char…
Fluid and ionic transport at nanoscale recently highlighted a wealth of exotic behaviours. However, the artificial nanofluidic devices are still far from the advanced functionalities existing in biological systems, such as electrically and mechanically activated transport. Here we focus on the ionic transport through 2 nm-radius individual multiwalled carbon nanotubes (CNT), under the combination of mechanical and electrical forcings. Our findings evidence mechanically activated ionic transport under the form of an ionic conductance which depends quadratically on the applied pressure. Our theo…
In this work, we present a detailed static and dynamic analysis of a recently reported electrically actuated buckled carbon nanotube (CNT) resonator, based on the Euler-Bernoulli beam theory. The system behavior is analyzed using the Galerkin reduced order model. We show that a simple single-modal analysis can already predict snap-through bi-stability in a buckled CNT resonator. However, we prove that the experimental data, in which the snap-through buckling occurs at a finite frequency, cannot be explained without taking into account out-of-plane motion. The buckled CNTs are the first type of…
Spins confined in quantum dots are considered as a promising platform for quantum information processing. While many advanced quantum operations have been demonstrated, experimental as well as theoretical efforts are now focusing on the development of scalable spin quantum bit architectures. One particularly promising method relies on the coupling of spin quantum bits to microwave cavity photons. This would enable the coupling of distant spins via the exchange of virtual photons for two qubit gate applications, which still remains to be demonstrated with spin qubits. Here, we use a circuit QED…
Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this, we fabricate a light emitting diode structure comprising single layer graphene, thin hexagonal boron nitride and TMD mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the TMD family as a platf…
