碰撞激发能解释碳纳米管光电二极管中有效的载流子倍增吗？
Can impact excitation explain efficient carrier multiplication in carbon nanotube photodiodes?
摘要：
我们解决了最近的实验（Science 325，1367（2009）），其报道了在载流子倍增阈值（准粒子带隙的两倍）附近的光子能量下碳纳米管光电二极管中电子-空穴对的高效倍增。这一结果是令人惊讶的，在最近的实验和理论工作的多激子产生在其他受限制的材料，如半导体纳米晶体。我们提出了一个详细的机制，载流子动力学和碰撞激发的基础上，导致高效的电子空穴对倍增。我们讨论了重要的时间和能量尺度的问题，并提供了温度和二极管的长度的作用的分析。
英文摘要：
We address recent experiments (Science 325, 1367 (2009)) reporting on highly efficient multiplication of electron-hole pairs in carbon nanotube photodiodes at photon energies near the carrier multiplication threshold (twice the quasi-particle band gap). This result is surprising in light of recent experimental and theoretical work on multiexciton generation in other confined materials, such as semiconducting nanocrystals. We propose a detailed mechanism based on carrier dynamics and impact excitation resulting in highly efficient multiplication of electron-hole pairs. We discuss the important time and energy scales of the problem and provide analysis of the role of temperature and the length of the diode.
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