低噪声III-V数字合金雪崩光电二极管的原子输运模型、设计原理和经验规则
Atomistic transport modeling, design principles and empirical rules for Low Noise III-V Digital Alloy Avalanche Photodiodes
摘要：
一系列III-V族三元和四元数字合金雪崩光电二极管（APD）最近被认为表现出非常低的过量噪声。使用环境依赖的原子紧束缚描述的短周期超晶格的带反转，我们认为，增加有效质量，minigaps和带分裂的组合是主要负责所观察到的优异性能。这些性质显著地限制了一种载流子类型（空穴或电子）的电离速率，使得雪崩倍增过程本质上是单极的。单极行为又降低了乘法增益的随机性。利用考虑量子隧穿的非平衡格林函数方法和考虑散射的玻尔兹曼输运方程模型研究了能带折叠对载流子输运的影响。它示出在这里，载流子输运的带内隧穿和光学声子散射减少的材料具有低过量噪声。基于我们的计算，我们提出了五个简单的不等式，可以用来近似评估数字合金设计低噪声光电探测器的适用性。我们使用这些标准评估多个数字合金的性能，并证明其有效性。
英文摘要：
A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superlattices, we argue that a combination of increased effective mass, minigaps and band split-off are primarily responsible for the observed superior performance. These properties significantly limit the ionization rate of one carrier type, either holes or electrons, making the avalanche multiplication process unipolar in nature. The unipolar behavior in turn reduces the stochasticity of the multiplication gain. The effects of band folding on carrier transport are studied using the Non-Equilibrium Green's Function Method that accounts for quantum tunneling, and Boltzmann Transport Equation model for scattering. It is shown here that carrier transport by intraband tunneling and optical phonon scattering are reduced in materials with low excess noise. Based on our calculations, we propose five simple inequalities that can be used to approximately evaluate the suitability of digital alloys for designing low noise photodetectors. We evaluate the performance of multiple digital alloys using these criteria and demonstrate their validity.
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