Si（001）衬底上外延生长的电驱动InP量子点的高效单光子发射
Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)
摘要：
在硅上异质外延III-V族半导体是使硅成为用于片上光学互连和量子光学应用的光子平台的有前途的方法。两种材料系统的单片集成是一个长期的挑战，因为不同的材料特性导致外延层中的高缺陷密度。然而，近年来，纳米结构已经显示出适合于成功地在硅上实现发光体，利用它们的几何形状。刻面边缘和侧壁可以最小化或消除位错的形成，并且由于接触面积减小，纳米结构几乎不受位错网络的影响。在这里，我们展示了磷化铟量子点作为CMOS兼容硅衬底上的高效发光体的潜力，其发光特性与在III-V衬底上实现的成熟器件相当。首次提出了硅上的电驱动单光子发射，满足了硅雪崩光电二极管最高检测效率的波长范围。
英文摘要：
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency.
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