AI 中文总结
本文提出利用非晶Sb2S3壳层的光致转变，对InAs/InP量子点纳米线进行无接触式生长后波长调谐，实现室温及低温下约7和28 meV的红移，为可扩展量子光子架构提供光谱匹配发射器。
AI 中文摘要
可扩展的量子光子技术需要空间分离的发射器以相同波长发射，然而外延生长的量子点天然表现出发射能量在发射器间的差异。在此，我们展示了一种针对嵌入在InP纳米线中的InAs量子点的无接触式生长后调谐方法，该方法利用非晶Sb2S3壳层的光致转变。这种光致效应导致施加在InP核心上的应变逐渐松弛，从而实现对量子点发射的受控光谱调谐。该效应在室温及低温条件下均被观察到，适用于在电信频谱O波段发射的量子点。分别观察到室温下约7 meV和低温下约28 meV的应变诱导红移。因此，使用非晶硫系化物壳层提供了一条在生长后实现单量子点-纳米线水平局部波长调谐的途径。该方法有望为可扩展的量子光子架构实现光谱匹配的发射器。
英文摘要
Scalable quantum-photonic technologies require spatially separated emitters to emit at the same wavelength, yet epitaxially grown quantum dots naturally exhibit emitter-to-emitter variations in their emission energies. Here, we demonstrate a contact-free post-growth tuning approach for InAs quantum dots embedded in InP nanowires using the photo-induced transformation of an amorphous Sb2S3 shell. This photoinduced effect leads to a progressive relaxation of the strain imposed on the InP core, enabling controlled spectral tuning of the quantum-dot emission. The effect is observed both at room temperature and under cryogenic conditions for quantum dots emitting in the O-band of the telecommunications spectrum. Strain-induced redshifts of approximately 7 meV at room temperature and 28 meV under cryogenic conditions are observed, respectively. The use of an amorphous chalcogenide shell therefore provides a route to achieve local wavelength tuning at the single quantum-dot-in-a-nanowire level after growth. This approach could enable spectrally matched emitters for scalable quantum-photonic architectures.
