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arXiv physics/0606104physics.ins-det
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用于ILC顶点检测器的DEPFET像素系统的状态

Status of a DEPFET pixel system for the ILC vertex detector

M. Trimpl, M. Koch, R. Kohrs, H. Krueger, P. Lodomez, L. Reuen, C. Sandow, E. v. Toerne, J. J. Velthuis, N. Wermes, L. Andricek, H. G. Moser, R. H. Richter, G. … 展开作者

M. Trimpl, M. Koch, R. Kohrs, H. Krueger, P. Lodomez, L. Reuen, C. Sandow, E. v. Toerne, J. J. Velthuis, N. Wermes, L. Andricek, H. G. Moser, R. H. Richter, G. Lutz, F. Giesen, P. Fischer, I. Peric

摘要:

我们已经开发了一个原型系统的ILC顶点检测器的基础上DEPFET像素。该系统操作128 x64矩阵(具有约35 x25平方微米大像素),并使用两个专用微芯片,用于矩阵控制的TURCHER II芯片和用于读出的CURO II芯片。该系统的发展已被最终ILC的要求,其中最重要的是要求一个检测器减薄到50微米和一个行式读出的线速率为20 MHz以上。DEPFET技术的目标噪声性能在ENC=100 e-的范围内。该系统的功能已被证明使用不同的放射源的能量范围从6至40 keV。在最近的6 GeV电子束实验中,用450 μ m厚的传感器获得了S/N~120的信噪比。对于未来使用50微米薄传感器的改进的DEPFET系统,预期信噪比为40。

英文摘要:

We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micron and a row wise read out with line rates of 20MHz and more. The targeted noise performance for the DEPFET technology is in the range of ENC=100 e-. The functionality of the system has been demonstrated using different radioactive sources in an energy range from 6 to 40keV. In recent test beam experiments using 6GeV electrons, a signal-to-noise ratio of S/N~120 has been achieved with present sensors being 450 micron thick. For improved DEPFET systems using 50 micron thin sensors in future, a signal-to-noise of 40 is expected.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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