Defect-engineered scaling of lead-free ferroelectrics with ultralow-voltage switching
North Carolina State University（北卡罗来纳州立大学）；Stanford University（斯坦福大学）；SLAC National Accelerator Laboratory（SLAC国家加速器实验室）；Cornell University（康奈尔大学）；Argonne National Laboratory（阿贡国家实验室）
Reza Ghanbari, Jiayue Wang, Harikrishnan KP, Zixiao Shi, Aarushi Khandelwal, Konnor Koons, Eli Rodrigues, Tao Zhou, Martin Holt, David A. Muller, Harold Y. Hwang, Ruijuan Xu
Scaling ferroelectrics to nanometer thicknesses remains a central challenge for low-power, nonvolatile electronics, as leakage currents increasingly dominate with reduced dimensions. Alkali-based, lead-free ferroelectrics offer an environmentally sustainable alternative to lead-based systems, yet their scaling is severely limited by leakage arising from volatile alkali constituents. Here, we show that this intrinsic limitation can be transformed into an advantageous degree of freedom through defect engineering. By precisely modulating alkali deficiency during thin-film synthesis, we engineer clustered defect complexes that function as deep trap states, strongly suppressing leakage and enabling robust ferroelectric operation in ultrathin films down to the sub-10 nm regime at voltages below 100 mV. Our results establish defect-enabled scaling as a viable pathway for advancing environmentally benign ferroelectrics toward ultra-low-power, non-volatile electronic technologies.
Domain-Wall-Mediated Ultralow-Barrier Sliding and Pinning in Ferroelectric Moiré Superlattices Revealed by Machine Learning
National Center for Nanoscience and Technology, Chinese Academy of Sciences（中国科学院国家纳米科学中心）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）；Songshan Lake Materials Laboratory（松山湖材料实验室）
Domain Walls Stabilized by Intrinsic Phonon Modes and Engineered Defects Enable Robust Ferroelectricity in HfO2
School of Integrated Circuits, Peking University（北京大学集成电路学院）；Advanced Instrumental Analysis Center, School of Chemical Engineering and Technology, Tianjin University（天津大学化学工程与技术学院先进仪器分析中心）
Towards Improved Polarization Uniformity in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications
Quadratic piezoelectricity from stacking-engineered interference in multilayer sliding ferroelectrics
Inner Mongolia University（内蒙古大学）；Nanjing University（南京大学）；Institute of Metal Research, Chinese Academy of Sciences（中国科学院金属研究所）；University of Science and Technology of China（中国科学技术大学）
Two-dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-engineered Interlayer Interactions
二维范德瓦尔斯材料及其双层膜的研究在基础研究和技术应用方面引起了人们极大的兴趣。最近，一组具有面外铁电性的2D vdW III 2-VI 3材料引起了人们的广泛关注。本文采用从头算方法对二维铁电Ga_2O_3双层系统的结构、电子和光学性质进行了系统的研究。两个独立的单分子膜的固有偶极子导致三个不同的偶极子模型（一个铁电和两个反铁电模型）。铁电和反铁电偶极子模型的稳定堆叠结构可以通过单层膜的极化反转转变来转移，而不需要额外的操作。层间微扰效应与双轴应变工程相结合，导致双层系统的电子和光学性质的高度可调性。令人惊讶的是，结果揭示了一个相变从VDW离子层间相互作用引起的面内双轴拉伸应变。详细的分析表明，过渡机制的基础上的离子键合性质的Ga 2 O 3系统，涉及层间重排的阴离子，以补偿严重扭曲的离子折叠配置的对称性破缺。这些见解可以打开未来的实验合成，表征和应用的二维Ga 2 O3原子薄层系统的新前景。
Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
Ferroelectric switching at edge dislocations in BaTiO$_3$ modelled at the atomic scale
Interdisciplinary Centre for Advanced Materials Simulation (ICAMS), Ruhr-University Bochum（波鸿鲁尔大学先进材料模拟跨学科中心）；Center for Interface-Dominated High Performance Materials (ZGH), Ruhr-University Bochum（波鸿鲁尔大学界面主导高性能材料中心）；Faculty of Physics and Astronomy, Ruhr-University Bochum（波鸿鲁尔大学物理与天文学系）；Univ. Lille, CNRS, INRAE, Centrale Lille, UMR 8207 - UMET - Unité Matériaux et Transformations（里尔大学、法国国家科学研究中心、法国国家农业食品与环境研究院、里尔中央理工学院、UMR 8207 材料与转化单元）
Large Enhancements in Optical and Piezoelectric Properties in Ferroelectric Zn1-xMgxO Thin Films through Engineering Electronic and Ionic Anharmonicities
Embedded Ferroelectric Nanoclusters can drive Polarization Reversal in a Non-Ferroelectric Polar Film via the Proximity Effect
Institute of Physics of the National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）；Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine（乌克兰国家科学院弗伦采维奇材料科学问题研究所）；Department of Materials Science and Engineering, University of Tennessee, Knoxville（田纳西大学诺克斯维尔分校材料科学与工程系）；Department of Materials Science and Engineering, Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）；Zone 5 Technologies（Zone 5 科技公司）
