The exploration of ferroelectric phase transitions enables an in-depth understanding of ferroelectric switching and promising applications in information storage. However, controllably tuning the dynamics of ferroelectric phase transitions remains challenging owing to inaccessible hidden phases. Here, using protonic gating technology, we create a series of metastable ferroelectric phases and demonstrate their reversible transitions in van der Waals ferroelectric α-In2Se3 transistors. By varying the gate bias, protons can be incrementally injected or extracted, achieving controllable tuning of the ferroelectric α-In2Se3 protonic dynamics across the channel and obtaining numerous intermediate phases. Combining piezoelectric force microscopy and electrical hysteresis measurements, we surprisingly discover that the gate tuning of α-In2Se3 protonation is volatile, unlike the conventional gating effect, and the created new phases remain polar. Their origin, revealed by first-principles calculations, is related to the formation of metastable hydrogen-stabilized α-In2Se3 phases with switchable dipoles. Furthermore, our approach enables ultralow gate-voltage switching of different phases (below 0.4 V), and easy integration with transistor components. This work provides fundamental insights into the interactions between protons and ferroelectric phase transitions, providing a possible avenue for accessing hidden phases in ferroelectric switching and for developing energy-efficient, multilevel-switching memory devices.
Two-dimensional ferroelectrics are important quantum materials which have found novel application in nonvolatile memories, however, the effects of reversible polarization on chemical reactions and interaction with environments are rarely studied despite of its importance. Here, based on the first-principles calculations, we found distinct gas adsorption behaviors on the surfaces of ferroelectric In2Se3 layer and the reversible gas caption and release controlled by ferroelectric switch. We rationalize the novel phenomena to the synergistic effect of the different electrostatic potential and ele…
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen conducting metals (La0.67Sr0.33MnO3, LSMO) as electrodes, using atomic resolution electron microscopy while in situ electrical biasing. By direct oxygen imaging, we observe reversible oxygen vacancy migration from the bottom to the top electrode through HZO and reveal associated r…
Typical ferroelectrics possess a large spontaneous polarization Ps but simultaneously a large remnant polarization Pr as well, resulting in an inferior energy storage density.A mechanism that can reduce the Pr while maintain the Ps is demanded to enhance the energy storage property of ferroelectrics.In the present study, it is shown that after acceptor doping and aging treatment, the domain switching in ferroelectrics becomes reversible, giving rise to a pinched double hysteresis loop. The pinched loop with a large Ps and a small Pr thus results in an enhanced energy storage density. The physi…
Spin-orbit coupling effects occurring in non-centrosymmetric materials are known to be responsible for non-trivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible for a non-volatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, HfO2, which has been shown to exhibit robust ferroelectricity in a non-centrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional…
Fluctuating orders in solids are generally considered high-temperature precursors of broken symmetry phases. However, in some cases these fluctuations persist to zero temperature and prevent the emergence of long-range order, as for example observed in quantum spin and dipolar liquids. $SrTiO_3$ is a quantum paraelectric in which dipolar fluctuations grow when the material is cooled, although a long-range ferroelectric order never sets in. We show that the nonlinear excitation of lattice vibrations with mid-infrared optical pulses can induce polar order in $SrTiO_3$ up to temperatures in exces…
Tuning functional properties of thin caloric films by mechanical stress is currently of high interest. In particular, a controllable magnetisation or transition temperature is desired for improved usability in magnetocaloric devices. Here, we present results of epitaxial magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg$_{1/3}$Nb$_{2/3}$)$_{0.72}$Ti$_{0.28}$O$_3$ (PMN-PT) substrates. Utilizing X-ray diffraction measurements, we demonstrate that the strain induced in the substrate by application of an electric field can be transferred to the thin film, resulting in a change of the la…
Controlling magnetic anisotropy by orbital magnetic moments related to interfacial strains has considerable potential for the development of future devices using spins and orbitals. For the fundamental physics, the relationship between strain and orbital magnetic moment is still unknown, because there are few tools to probe changes of orbital magnetic moment. In this study, we developed an electric-field- (E)-induced X-ray magnetic circular dichroism (EXMCD) technique to apply E to a ferroelectric BaTiO3 substrate. We reversibly tuned the interfacial lattice constants of Ni/Cu multilayers on B…
The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled b…
A noncentrosymmetric superconductor can have a superconducting diode effect, where the critical current in opposite directions is different when time-reversal symmetry is also broken. We theoretically propose that a ferroelectric superconductor with coexisting ferroelectricity and superconductivity can support a ferroelectric reversible superconducting diode effect. Through first-principles calculation, we predict that monolayer CuNb$_2$Se$_4$ (i.e., bilayer NbSe$_2$ intercalated with Cu) is such a ferroelectric superconductor, where ferroelectricity controls the layer polarization as well as …
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose. We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the interface, and it can be made reversible if the antiferromagnet is layered symmetrically between two identical ferroelectric layers. We explicitly demonstrate this phenomenon using density functional t…
Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide
Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite similar structures and energies. Identifying and stabilizing the ferroelectric functional phases of HfO$_2$ have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO$_2$ are used to discover that imposing an in-plane shear strain on the tetragonal phase induces a nonpolar to polar phase transition…
Reversible non-equilibrium phase transformation in amorphous germanium
University of Science and Technology of China（中国科学技术大学）；Suzhou Institute for Advanced Research, University of Science and Technology of China（中国科学技术大学苏州高等研究院）；Institute of Physics, Slovak Academy of Sciences（斯洛伐克科学院物理研究所）；Carnegie Mellon University（卡内基梅隆大学）
Searching for performant multiferroic materials attracts general research interests in energy science as they have been increasingly exploited as the conversion media among thermal, electric, magnetic and mechanical energies by using their temperature-dependent ferroic properties. Here we report a material development strategy that guides us to discover a reversible phase-transforming ferroelectric material exhibiting enduring energy harvesting from small temperature differences. The material satisfies the crystallographic compatibility condition between polar and nonpolar phases, which shows …
For the study of polarization reversal features in the structure of "mixed ionic-electronic conductor - on - ferroelectric" type, the hydrogen bonded molecular ferroelectric crystal triglycine sulphate (TGS) is used. The dynamic currant-voltage (I-V-) loops of thin TGS plates of polar (010) cut with dissimilar electrodes on the opposite surfaces (vacuum deposited Ag and Ag-paste diluted with a water-ethanol mixture) are investigated. After electroforming in the low-voltage vicinity of coercive voltage, during further cycling, a reversible transformation of I-V-loop shape occurs from typical of…
We discuss ferroelectric phase transitions into single- and multidomain states in very thin films using continuous theory. It is shown that in nearly cubic ferroelectrics the domain state may survive down to atomic film thicknesses, unlike the single domain state, which is almost always unstable or metastable. This conclusion is valid almost irrespective of the nature of electrodes (metallic or semiconducting) and whether or not the screening carriers may be present in the ferroelectric itself.
Two-dimensional materials with ferroelectric properties break the size effect of conventional ferroelectric materials and unlock unprecedented potentials of ferroelectric-related application at small length scales. In this work, using density functional theory (DFT) calculations, we discover a tribo-ferroelectricity behavior in a group of bilayer group-IV monochalcogenides (MX, with M = Ge, Sn and X = S, Se). Upon interlayer sliding over an in-plane unit cell length, the top layer exhibits a reversible intralayer ferroelectric switching, leading to a reversible transition between the ferroelec…
By studying the dynamics of the metastable magnetization of a statistical mechanical model we propose a switching mechanism of photoinduced magnetization. The equilibrium and nonequilibrium properties of the Blume-Capel (BC) model, which is a typical model exhibiting metastability, are studied by mean field theory and Monte Carlo simulation. We demonstrate reversible changes of magnetization in a sequence of changes of system parameters, which would model the reversible photoinduced magnetization. Implications of the calculated results are discussed in relation to the recent experimental resul…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition metal dichalcogenide films provide an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of two-dimensional material devices. Here, local control of ferroelectric domains in a marginally twisted WS2 bilayer is demonstrated with a scanning tunneling microscope at room temperature, and their observed reversible e…
We theoretically investigate the temperature dependence of the reversible structural relaxation time and diffusion constant of metallic glasses under pressure. The compression not only changes the glassy dynamics, but also generates a metastable state along with a higher-energy state where the system can rejuvenate. The relaxation times for forward and backward transitions in this two-state system are nearly identical and much faster than the relaxation time without accounting for barrier-recrossing. At ambient pressure, the expected irreversible relaxation process is recovered, and our numeri…
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate that the spin rotation and width of ferromagnetic domain walls can be accurately controlled by the strength of the applied magnetic field if the ferromagnetic walls are pinned onto 90 degrees ferroelectric domain boundaries. Moreover, reversible switching between magnetically charged and uncharged domain walls is initiated by magnetic field rotation. Switchi…
We study the free energy landscape of a minimal model for relaxor ferroelectrics. Using a variational method which includes leading correlations beyond the mean-field approximation as well as disorder averaging at the level of a simple replica theory, we find metastable paraelectric states with a stability region that extends to zero temperature. The free energy of such states exhibits an essential singularity for weak compositional disorder pointing to their necessary occurrence. Ferroelectric states appear as local minima in the free energy at high temperatures and become stable below a coex…
The stability of high-symmetry $P4mm$ polar phase in eleven ferroelectric perovskite superlattices with the polar discontinuity is studied from first principles. In most superlattices, this phase exhibits either the ferroelectric or the antiferrodistortive instability, or both of them. The structure of the ground state and, for a number of systems, also of metastable phases in these superlattices is found. The spontaneous polarization and piezoelectric properties of superlattices are calculated. The appearance of high piezoelectric coefficients (up to 150-270 pC/N) in some superlattices is ass…
We discovered a new metastable polaron-supporting phase in pristine films of a soluble derivative of poly-p-phenylene vinylene (MEH-PPV) that is induced by UV illumination. In the initial un-illuminated phase A, the films do not show long-lived photogenerated polarons. However, prolonged UV illumination for several hours induces a reversible, me-tastable phase B that shows abundant long-lived photogenerated polarons. Phase B films transform back to the original phase A within 1/2 hour in the dark at room temperature. We propose a reversible mechanism in which UV illumination creates metastable…
In the micro- and nanoscale ferroelectric samples, the formation and the growth of domains are the usual stages of the polarization switching mechanism. By assuming the weak polarization anisotropy and by solving the Ginzburg-Landau-Khalatnikov equation we have explored an alternative mechanism which consists in ferroelectric switching induced by vortex formation. We have studied the polarization dynamics inside a ferroelectric circular capacitor where switching leads to formation of a metastable vortex state with a rotational motion of polarization. Our results are consistent with recent firs…
The orientational and translational order of a thermotropic ferroelectric liquid crystal (2MBOCBC) imbibed in self-organized, parallel, cylindrical pores with radii of 10, 15, or 20 nm in anodic aluminium oxide monoliths (AAO) are explored by high-resolution linear and circular optical birefringence as well as neutron diffraction texture analysis. The results are compared to experiments on the bulk system. The native oxidic pore walls do not provide a stable smectogen wall anchoring. By contrast, a polymeric wall grafting enforcing planar molecular anchoring results in a thermal-history indepe…
The recent observation of ferroelectricity in the metastable phases of binary metal oxides, such as HfO2, ZrO2, Hf0.5Zr0.5O2, and Ga2O3, has garnered a lot of attention. These metastable ferroelectric phases are typically stabilized through epitaxial growth, alloying, or defect engineering. Here, we propose hole doping plays a key role in stabilizing the polar phases in binary metal oxides. Using first-principles density-functional-theory calculations, we show that holes in these oxides mainly occupy one of the two oxygen sublattices. This hole localization, which is more pronounced in the pol…
The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the growth window (temperature and oxygen pressure during deposition and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant ferroelectric polarization, up to around 24 uC/cm2, depends on the amount of orthorhombic phase and interplanar spacing and increases with temperature and pressure for a fixed film thickness. The leaka…
We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovolatic effects and the spectral response of the photocurrent were explore to illustrate the reversible bandgap variation (~0.3eV). This local-strain-engineered bandgap has been further revealed by in situ probe-voltage-assisted valence electron energy-loss spectroscopy (EELS). Phase-field simulations and first-principle calculations were also employed for illustration of the large local strain and the bandg…
Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large two-dimensional conduction. Charged ferroelectric walls, which are energetically unfavorable in general, were found to be mysteriously abundant in hybrid improper ferroelectric (Ca,Sr)3Ti2O7 crystals. From the exploration of antiphase boundaries in bilayer-perovskites, we discover that each of four polarization-direction states is degenerated with two antiphase domains, a…
Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the possible critical thickness effect. Van der Waals materials, thanks to their stable layered structure, saturate interfacial chemistry and weak interlayer couplings, are promising for exploring ultra-thin two-dimensional (2D) ferroelectrics and device applications. Here, we demonstrate a switchable room-temperature ferroelectric diode built upon a 2D ferroelectric α-In2Se3 la…
Oxyhydroxide minerals like FeOOH have been a research focus in geology for studying the Earth interior, and also in chemistry for studying oxygen electrocatalysis activity. In this paper we provide first-principles evidence of a new class of ferroelectrics or multiferroics among them:GaOOH,InOOH,CrOOH,FeOOH, which are earth-abundant minerals and have been experimentally verified to possess distorted rutile structures, are ferroelectric with considerable polarizations(up to 24 muC/cm2) and piezoelectric coefficients. Their atomic-thick layer may possess vertical polarization robust against depo…
Ferroelectrics usually adopt a multi-domain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric materials. The enhancement of low-field susceptibility/permittivity under subswitching conditions is usually attributed to the reversible domain wall vibration. Recent experiments highlight the stationary domain wall contribution to the dielectric susceptibility irrespective of any lateral displacements or deformations of the wall. We study the effects of domain w…
Relaxor ferroelectric perovskites are highly polarizable and can exhibit giant coupling between elastic strain and an applied electric field. Here, we report an in situ extended X-ray absorption fine structure (EXAFS) study of a PbZn1/3Nb2/3O3 (PZN) single crystal as a function of the electric field. We show that the strong dipoles in the NbO6 octahedra bonds are aligned along the four \textless{} 011 \textgreater{} directions close to the orientation of the electric field, while a small reversible polar shift occurs for Zn in the direction of the electric field, i.e., positive or negative. Th…
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Here is shown the fundamental role of the microstructure of HZO films setting the balance between those contributions. The oxide film presents coherent or incoherent grain bound…
